Download: DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07

DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES PINNING - TO-92 • High speed switching PIN SYMBOL DESCRIPTION • Interchangeability of drain and source connections1ggate • Low RDSon at zero gate voltage (...
Author: Filibert Took Shared: 8/19/19
Downloads: 86 Views: 334

Content

DISCRETE SEMICONDUCTORS

DATA SHEET J108; J109; J110 N-channel silicon junction FETs

Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07, FEATURES PINNING - TO-92 • High speed switching PIN SYMBOL DESCRIPTION • Interchangeability of drain and source connections1ggate • Low RDSon at zero gate voltage (<8 Ω for J108). 2 s source3ddrain

APPLICATIONS

• Analog switches • Choppers and commutators. handbook, halfpage2 DESCRIPTION3dgN-channel symmetrical silicon junction field-effect s transistors in a TO-92 package. MAM197

CAUTION

The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − ±25 V VGSoff gate-source cut-off voltage ID = 1 µA; VDS = 5 V J108 −3 −10 V J109 −2 −6 V J110 −0.5 −4 V IDSS drain current VGS = 0; VDS = 5 V J108 80 − mA J109 40 − mA J110 10 − mA Ptot total power dissipation up to Tamb = 50 °C − 400 mW 1996 Jul 30 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − ±25 V VGSO gate-source voltage open drain − −25 V VGDO gate-drain voltage open source − −25 V IG forward gate current (DC) − 50 mA Ptot total power dissipation up to Tamb = 50 °C − 400 mW Tstg storage temperature −65 150 °C Tj operating junction temperature − 150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient 250 K/W STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS = 0 − − −25 V VGSoff gate-source cut-off voltage ID = 1 µA; VDS = 5VVJ108 −3 − −10 V J109 −2 − −6 V J110 −0.5 − −4 V IDSS drain current VGS = 0; VDS = 15 V J108 80 − − mA J109 40 − − mA J110 10 − − mA IGSS gate leakage current VGS = −15 V; VDS = 0 − − −3 nA IDSX drain-source cut-off current VGS = −10 V; VDS = 5 V − − 3 nA RDSon drain-source on-state resistance VGS = 0; VDS = 100 mV J108 − − 8 Ω J109 − − 12 Ω J110 − − 18 Ω 1996 Jul 30 3, DYNAMIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cis input capacitance VDS = 0; VGS = −10 V; f = 1 MHz 15 30 pF VDS = 0; VGS = 0; f = 1 MHz; 50 85 pF Tamb = 25 °C Crs reverse transfer capacitance VDS = 0; VGS = −10 V; f = 1 MHz 8 15 pF Switching times; see Fig.2 td delay time note12− ns ton turn-on time 4 − ns ts storage time 4 − ns toff turn-off time 6 − ns Note 1. Test conditions for switching times are as follows: VDD = 1.5 V; VGS = 0 to VGSoff (all types) VGSoff = −12 V; RL = 100 Ω (J108) VGSoff = −7 V; RL = 100 Ω (J109) VGSoff = −5 V; RL = 100 Ω (J110). handbook, halfpage 50 Ω 0.1 µF

VDD

10 nF 10 µF

RL SAMPLING SCOPE DUT

50 Ω 50 Ω MGE773 Fig.2 Switching circuit. 1996 Jul 30 4,

V

handbook, full pagewidth GS = 0 V 10% Vi 90% VGS off toff ton ts tf td tr 90% Vo 10% MGE774 Fig.3 Input and output waveforms. 1996 Jul 30 5, PACKAGE OUTLINE handbook, full pagewidth 0.40 min 4.2 max 1.7 5.2 max 12.7 min 1.4 0.48 1 0.40 4.8 max 2.54 2 0.66 (1) 2.0 max MBC014 - 10.56 Dimensions in mm. (1) Terminal dimensions in this zone are uncontrolled. Fig.4 TO-92 (SOT54). 1996 Jul 30 6,

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 30 7]
15

Similar documents

DISCRETE SEMICONDUCTORS DATA SHEET Line-ups RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b
DISCRETE SEMICONDUCTORS DATA SHEET Line-ups RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b INTRODUCTION In this section, we present information on recommended circuit line-ups in the main RF power application areas. A comprehensive range of output power levels is
Typical Characteristics
KSP94 High Voltage Transistor • High Collector-Emitter Voltage: VCEO= -400V • Low Collector-Emitter Saturation Voltage • Complement to KSP44 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units V
DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995
DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES PINNING - TO-92 • Low noise PIN SYMBOL DESCRIPTION • Interchangeability of drain and source
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223/D Silicon Bidirectional Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223/D Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications such as lighting sysjtems, heater controls, motor controls and power supplies; or wherever full-wave silicon- gate-controlled devices are nee
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218FP/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218FP/D Silicon Bidirectional Thyristors ISOLATED TRIACs .designed primarily for full-wave ac control applications, such as light dimmers, THYRISTORS motor controls, heating controls and power supplies. 8 AMPERES RMS • Blocking Voltage to 800 Vo
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC212FP/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC212FP/D Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, ISOLATED TRIACs motor controls, heating controls and power supplies; or wherever full-wave silicon THYRISTORS gate control
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218/D Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. TRIACs • Blocking Voltage to 800 Volts 8 AMPERES RMS • Glass Passivated
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors swi
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC210FP/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC210FP/D Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, ISOLATED TRIACs motor controls, heating controls and power supplies; or wherever full-wave silicon THYRISTORS gate control
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors swi
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC15S/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC15S/D Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave control of ac TRIACS loads such as appliance controls, heater controls, motor controls, and other 15 AMPERES RMS power switching applications.
SEMICONDUCTOR TECHNICAL DATA TRIACS 15 AMPERES RMS 400 thru 800 Designed for high performance full-wave ac control applications where high VOLTS noise immunity and high commutating di/dt are required.
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS 15 AMPERES RMS 400 thru 800 Designed for high performance full-wave ac control applications where high VOLTS noise immunity and high commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State Current Rating of 15 Amperes
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS Designed for high performance full-wave ac control applications where high 15 AMPERES RMS
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS Designed for high performance full-wave ac control applications where high 15 AMPERES RMS noise immunity and high commutating di/dt are required. 400 thru 800 • Blocking Voltage to 800 Volts VOLTS • On-State Current Rating of 15 Amperes
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristor
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type th
*Motorola preferred devices Silicon Bidirectional Thyristors TRIACS12 AMPERES RMS
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices Silicon Bidirectional Thyristors TRIACS12 AMPERES RMS 400 thru 800 Designed for high performance full–wave ac control applications where high VOLTS noise immunity and commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State C
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors *Motorola preferred devices Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. TRIAC • Sensitive Gate
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8/D 8 AMPERES RMS
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8/D *Motorola preferred devices SCRs 8 AMPERES RMS 400 thru 800 Designed primarily for half–wave ac control applications, such as motor VOLTS controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices
Order this document *Motorola preferred devices SCRs
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8S/D *Motorola preferred devices SCRs 8 AMPERES RMS Designed primarily for half–wave ac control applications, such as motor 400 thru 800 controls, heating controls, and power supplies; or wherever half–wave, silicon VOLTS gate–controlled devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DSM/D Reverse Blocking Thyristors Motorola Preferred Devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DSM/D Reverse Blocking Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size SCRs • Passivated D
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DCM/D Reverse Blocking Thyristors Motorola Preferred Devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DCM/D Reverse Blocking Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size SCRs • Passivated D
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR72/D Reverse Blocking Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR72/D Reverse Blocking Triode Thyristors .designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gate
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR703A/D Reverse Blocking Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR703A/D Reverse Blocking Triode Thyristors .PNPN devices designed for high volume, low cost consumer applications such as *Motorola preferred devices temperature, light and speed control; process and remote control; and warning systems where reli
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR506/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR506/D .PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Passivated Surface for Reliability a
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR310/D Reverse Blocking Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR310/D Reverse Blocking Triode Thyristors .designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gat
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR265-2/D Silicon Controlled Rectifiers
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR265-2/D Silicon Controlled Rectifiers .designed for inverse parallel SCR output devices for solid state relays, welders, battery chargers, motor controls or applications requiring high surge operation. • Photo Glass Passivated Blocking Junctions
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR25/D *Motorola preferred devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR25/D *Motorola preferred devices Designed primarily for half–wave ac control applications, such as motor SCRs controls, heating controls, and power supplies; or wherever half–wave, silicon 25 AMPERES RMS gate–controlled devices are needed. 400 t
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR264-4/D Silicon Controlled Rectifiers
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR264-4/D Silicon Controlled Rectifiers SCRs .designed for back-to-back SCR output devices for solid state relays or applications 40 AMPERES RMS requiring high surge operation. 200 thru 800 VOLTS • Photo Glass Passivated Blocking Junctions for Hig
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR225FP/D Reverse Blocking Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR225FP/D Reverse Blocking Thyristors .designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. ISOLATED SCRs 25 AMPERES RMS • Glass Passivated Junctions with Center Gate
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR22-2/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR22-2/D .designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low-power switching applications. • 150 Amperes for 2 µs Safe Area • High dv/dt • Very Low Forward “On” Voltage