Download: Typical Characteristics

KSP94 High Voltage Transistor • High Collector-Emitter Voltage: VCEO= -400V • Low Collector-Emitter Saturation Voltage • Complement to KSP44 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -6 V IC Collector Current -300 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55~150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbo...
Author: Filibert Took Shared: 8/19/19
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KSP94 High Voltage Transistor

• High Collector-Emitter Voltage: VCEO= -400V • Low Collector-Emitter Saturation Voltage • Complement to KSP44 1 TO-92 1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -6 V IC Collector Current -300 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55~150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 -400 V BVCES Collector-Emitter Breakdown Voltage IC= -100µA, VBE=0 -400 V BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -6 V ICBO Collector Cut-off Current VCB= -300V, VE=0 -100 nA ICES Collector Cut-off Current VCE= -400V, VBE=0V -1 µA IEBO Emitter Cut-off Current VBE= -4V, IC=0 -100 nA hFE1 DC Current Gain VCE= -10V, IC= -1mA 40 hFE2 VCE= -10V, IC= -10mA 50 300 hFE3 VCE= -10V, IC= -50mA 45 hFE4 VCE= -10V, IC= -100mA 40 VCE (sat)1 Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -500 mV VCE (sat)2 IC= -50mA, IB= -5mA -750 mV VBE (sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -1mA -750 mV Cob Output Capacitance VCB= -20V, IE=0, f=1MHz 7 pF,

Typical Characteristics

1000 -10 VCE = -10V IC = 10 IB 100 -1 10 -0.1 1 -0.01 -1 -10 -100 -1000 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

-10 100 IE = 0 IC = 10 IB f = 1MHz -1 -0.1 -0.01 1 -1 -10 -100 -1000 -0.1 -1 -10 -100 I [mA], COLLECTOR CURRENT VCB [V], COLLECTOR-BASE VOLTAGEC

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance

VCE(sat), SATURATION VOLTAGE hFE, DC CURRENT GAIN Cob[pF], CAPACITANCE VBE(sat), SATURATION VOLTAGE,

Package Dimensions TO-92

+0.25 4.58 –0.15 0.46 ±0.10 1.27TYP 1.27TYP +0.100.38 –0.05 [1.27 ±0.20] [1.27 ±0.20] 3.60 ±0.20 (R2.29) Dimensions in Millimeters 3.86MAX 1.02 ±0.10 +0.10 0.38 –0.05 (0.25) 14.47 ±0.40 4.58 ±0.20,

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ FACT™ ImpliedDisconnect™ PACMAN™ SPM™ ActiveArray™ FACT Quiet series™ ISOPLANAR™ POP™ Stealth™ Bottomless™ FAST® LittleFET™ Power247™ SuperSOT™-3 CoolFET™ FASTr™ MicroFET™ PowerTrench® SuperSOT™-6 CROSSVOLT™ FRFET™ MicroPak™ QFET™ SuperSOT™-8 DOME™ GlobalOptoisolator™ MICROWIRE™ QS™ SyncFET™ EcoSPARK™ GTO™ MSX™ QT Optoelectronics™ TinyLogic™ E2CMOS™ HiSeC™ MSXPro™ Quiet Series™ TruTranslation™ EnSigna™ I2C™ OCX™ RapidConfigure™ UHC™ OCXPro™ RapidConnect™ UltraFET® Across the board. Around the world™ OPTOLOGIC® SLIENT SWITCHER® VCX™ The Power Franchise™ OPTOPLANAR™ SMART START™ DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition Advance Information Formative or In This datasheet contains the design specifications for Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I, & '( !"# ! , ) ./01 #34 . , #35 " #36 $ " ( * "! ( + % "# ! # + 2+# 7% ! ,!$ -! # ! ,!. - !% 8 ,! .! , ! !"#$%"&'(%& %)'"%&'!%*$%('((!'&$$% "'+'%,'*- %& ''.$'-'($$%+!% !"'*%("&%%$%%( / 0! 1127121 2 3451112123 4511 3 45 21111211 232132162" 1112$ 2 $ 123112121( ( $ 121% ( $ 1112]
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