Download: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995

DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES PINNING - TO-92 • Low noise PIN SYMBOL DESCRIPTION • Interchangeability of drain and source connections1ggate • High gain. 2 s source3ddrain APPLICATIONS • AM input stage in car radios • UHF/VHF amplifiers, oscillators and mixers. handbook, halfpage DESCRIPTION 23dgN-channel symmetrical silicon junction field-effect s transistors in a TO-92 package. MAM197 CAUTION The device is supplied i...
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DISCRETE SEMICONDUCTORS

DATA SHEET J308; J309; J310 N-channel silicon field-effect

transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07, FEATURES PINNING - TO-92 • Low noise PIN SYMBOL DESCRIPTION • Interchangeability of drain and source connections1ggate • High gain. 2 s source3ddrain

APPLICATIONS

• AM input stage in car radios • UHF/VHF amplifiers, oscillators and mixers. handbook, halfpage DESCRIPTION 23dgN-channel symmetrical silicon junction field-effect s transistors in a TO-92 package. MAM197

CAUTION

The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − ±25 V VGSoff gate-source cut-off voltage VDS = 10 V; ID = 1 µA J308 −1 −6.5 V J309 −1 −4 V J310 −2 −6.5 V IDSS drain current VGS = 0; VDS = 10 V J308 12 60 mA J309 12 30 mA J310 24 60 mA Ptot total power dissipation up to Tamb = 50 °C − 400 mW yfs forward transfer admittance VDS = 10 V; ID = 10 mA 10 − mS 1996 Jul 30 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − ±25 V VGSO gate-source voltage open drain − −25 V VGDO gate-drain voltage open source − −25 V IG forward gate current (DC) − 50 mA Ptot total power dissipation up to Tamb = 50 °C − 400 mW Tstg storage temperature −65 150 °C Tj operating junction temperature − 150 °C MCD212 handbook, halfpage Ptot (mW) 0 50 100 150 Tamb ( oC) Fig.2 Power derating curve. 1996 Jul 30 3, THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient; note 1 250 K/W Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm × 10 mm. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS = 0 −25 − − V VGSoff gate-source cut-off voltage ID = 1 µA; VDS = 10VVJ308 −1 − −6.5 V J309 −1 − −4 V J310 −2 − −6.5 V VGSS gate-source forward voltage IG = 1 mA; VDS = 0 − − 1 V IDSS drain current VDS = 10 V; VGS = 0 J308 12 − 60 mA J309 12 − 30 mA J310 24 − 60 mA IGSS gate leakage current VGS = −15 V; VDS = 0 − − −1 nA RDSon drain-source on-state resistance VGS = 0; VDS = 100 mV − 50 − Ω yfs forward transfer admittance ID = 10 mA; VDS = 10 V 10 − − mS yos common source output admittance ID = 10 mA; VDS = 10 V − − 250 µS 1996 Jul 30 4, DYNAMIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cis input capacitance VDS = 10 V; VGS = −10 V; f = 1 MHz35pF VDS = 10 V; VGS = 0; Tamb = 25 °C 6 − pF Crs reverse transfer capacitance VDS = 0; VGS = −10 V; f = 1 MHz 1.3 2.5 pF gis common source input VDS = 10 V; ID = 10 mA; f = 100 MHz 200 − µS conductance VDS = 10 V; ID = 10 mA; f = 450 MHz 3 − mS gfs common source transfer VDS = 10 V; ID = 10 mA; f = 100 MHz 13 − mS conductance VDS = 10 V; ID = 10 mA; f = 450 MHz 12 − mS grs common source reverse VDS = 10 V; ID = 10 mA; f = 100 MHz −30 − µS conductance VDS = 10 V; ID = 10 mA; f = 450 MHz −450 − µS gos common source output VDS = 10 V; ID = 10 mA; f = 100 MHz 150 − µS conductance VDS = 10 V; ID = 10 mA; f = 450 MHz 400 − µS Vn equivalent input noise voltage VDS = 10 V; ID = 10 mA; f = 100 Hz 6 − nV/√Hz MCD220 MCD219 50 20 handbook, halfpage handbook, halfpage IDSS Yfs (mA) (mS) 40 16 30 12 20 8 104000−1 −2 −3 −4 0 −2 −4 −6 −8 VGSoff (V) VGSoff (V) VDS = 10 V; ID = 10 mA; Tj = 25 °C. VDS = 10 V; Tj = 25 °C. Fig.4 Forward transfer admittance as a Fig.3 Drain current as a function of gate-source function of gate-source cut-off voltage; cut-off voltage; typical values. typical values. 1996 Jul 30 5, MCD221 MCD222 handboo1k,5 h0alfpage 80handbook, halfpage G Ros DSon (µS) (Ω) 000−1 −2 −3 −4 0 −1 −2 −3 −4 VGSoff (V) VGSoff (V) VDS = 10 V; ID = 10 mA; Tj = 25 °C. VDS = 100 mV; VGS = 0; Tj = 25 °C. Fig.5 Common-source output conductance as a Fig.6 Drain-source on-state resistance as a function of gate-source cut-off voltage; function of gate-source cut-off voltage; typical values. typical values. MCD216 MCD213 16 16 handbook, halfpage handbook, halfpage ID ID (mA) (mA) VGS = 0 V 12 12 −0.25V88−0.5V44−0.75 V −1V0004812 16 −2 −1.5 −1 −0.5 0 VDS (V) VGS (V) Tj = 25 °C. VDS = 10 V; Tj = 25 °C. Fig.7 Typical output characteristics; J308. Fig.8 Typical transfer characteristics; J308. 1996 Jul 30 6, MCD218 MCD215 20 20 handbook, halfpage handboI ok, halfpageID D (mA) (mA)VGS = 0 V 16 16 −0.25 V 12 12 −0.5V88−0.75V44−1V0004812 16 −2 −1.5 −1 −0.50V(V) VGS (V)DS T = 25 °C. VDS = 10 V; Tj = 25 °C.j Fig.9 Typical output characteristics; J309. Fig.10 Typical transfer characteristics; J309. MCD217 MCD214 40 40 handbook, halfpage VGS = 0 V handbook, halfpage ID ID (mA) (mA) 30 −0.5 V 30 20 −1 V 20 −1.5 V 10 10 −2 V −2.5V0004812 16 −4 −3 −2 −10V(V) VGS (V)DS Tj = 25 °C. VDS = 10 V; Tj = 25 °C. Fig.11 Typical output characteristics; J310. Fig.12 Typical transfer characteristics; J310. 1996 Jul 30 7, MCD224 MCD223 4 10 handbook, halfpage handbook, halfpage C Crs is (pF) (pF) 0 0 −10 −8 −6 −4 −2 0 −10 −8 −6 −4 −2 0 VGS (V) VGS (V) VDS = 10 V; Tj = 25 °C. VDS = 10 V; Tj = 25 °C. Fig.13 Reverse transfer capacitance as a function Fig.14 Input capacitance as a function of of gate-source voltage; typical values. gate-source voltage; typical values. 3 MCD22910 handbook, full pagewidth

ID

(µA) 10−1 10−2 10−3 −2.5 −2 −1.5 −1 −0.5 0 VGS (V) VDS = 10 V; Tj = 25 °C. Fig.15 Drain current as a function of gate-source voltage; typical values. 1996 Jul 30 8, MCD230 −104 handbook, full pagewidthII= 10 mAG D (pA) −103 1 mA −102 100 µA −10 −1

IG

−10−10246810 12 14 16 VDG (V) Tj = 25 °C. Fig.16 Gate current as a function of drain-gate voltage; typical values. MCD231 handbook, full pagewidth

IGSS

(pA) 10−1 −25 0 25 50 75 100 125 150 o 175Tj ( C) Fig.17 Gate current as a function of junction temperature; typical values. 1996 Jul 30 9, MCD228 MCD227 handbook, halfpage handbook1,0 h0alfpage gis, bis (mS) gfs, −bfs (mS) bis gfs gis 1 −bfs 0.1 1 10 100 1000 10 100 f (MHz) 1000f (MHz) VDS = 10 V; ID = 10 mA; Tamb = 25 °C. VDS = 10 V; ID = 10 mA; Tamb = 25 °C. Fig.18 Input admittance; typical values. Fig.19 Forward transfer admittance; typical values. MCD226 MCD225 2 100 handbook1, 0halfpage handbook, halfpage −brs, −grs bos, gos (mS) (mS) − brs 1 bos − g 10−1 rs gos 10−2 0.1 10 100 1000 10 100 f (MHz) 1000f (MHz) VDS = 10 V; ID = 10 mA; Tamb = 25 °C. VDS = 10 V; ID = 10 mA; Tamb = 25 °C. Fig.20 Reverse transfer admittance; typical values. Fig.21 Output admittance; typical values. 1996 Jul 30 10, PACKAGE OUTLINE handbook, full pagewidth 0.40 min 4.2 max 1.7 5.2 max 12.7 min 1.4 0.48 1 0.40 4.8 max 2.54 2 0.66 (1) MBC014 - 1 0.56 2.0 max Dimensions in mm. (1) Terminal dimensions in this zone are uncontrolled. Fig.22 TO-92 (SOT54). 1996 Jul 30 11,

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 30 12]
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