Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218/D Silicon Bidirectional Thyristors

Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218/D Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. TRIACs • Blocking Voltage to 800 Volts 8 AMPERES RMS • Glass Passivated Junctions for Greater Parameter Uniformity and Stability 200 thru 800 VOLTS • TO-220 Construction Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC218 Series) or Four Modes (MAC218A Series) MT2 MT1 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218/D Silicon Bidirectional Thyristors

.designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. TRIACs • Blocking Voltage to 800 Volts 8 AMPERES RMS • Glass Passivated Junctions for Greater Parameter Uniformity and Stability 200 thru 800 VOLTS • TO-220 Construction Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC218 Series) or Four Modes (MAC218A Series) MT2 MT1

G

CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Peak Repetitive Off-State Voltage(1) VDRM Volts (Gate Open, TJ = 25 to 125°C) MAC218-4, MAC218A4 200 MAC218-6, MAC218A6 400 MAC218-8, MAC218A8 600 MAC218-10, MAC218A10 800 On-State Current RMS IT(RMS) 8 Amps (Conduction Angle = 360°, TC = +80°C) Peak Non-repetitive Surge Current ITSM 100 Amps (One Full Cycle, 60 Hz, TC = 80°C, preceded and followed by rated current) Fusing Current I2t 40 A2s (t = 8.3 ms) Peak Gate Power PGM 16 Watts (TC = +80°C, Pulse Width = 2 µs) Average Gate Power PG(AV) 0.35 Watt (TC = +80°C, t = 8.3 ms) Peak Gate Trigger Current IGTM 4 Amps (Pulse Width = 1 µs) Operating Junction Temperature Range TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data 1 Motorola, Inc. 1995,

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2.2 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit Peak Blocking Current IDRM (VD = Rated VDRM, gate open) TJ = 25°C — — 10 µA TJ = 125°C — — 2 mA Peak On-State Voltage (Either Direction) VTM — 1.7 2 Volts (ITM = 11.3 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%) Gate Trigger Current (Continuous dc) IGT mA (VD = 12 Vdc, RL = 12Ω) Trigger Mode MT2(+), Gate(+); MT2(+), Gate(–); MT2(–), Gate(–) — — 50 MT2(–), Gate(+) “A” SUFFIX ONLY — — 75 Gate Trigger Voltage (Continuous dc) VGT Volts (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) — 0.9 2 MT2(+), G(–) — 0.9 2 MT2(–), G(–) — 1.1 2 MT2(–), G(+) “A” SUFFIX ONLY — 1.4 2.5 (Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) 0.2 — — MT2(–), G(+) “A” SUFFIX ONLY 0.2 — — Holding Current (Either Direction) IH — — 50 mA (VD = 24 Vdc, Gate Open, Initiating Current = 200 mA) Critical Rate of Rise of Commutating Off-State Voltage dv/dt(c) — 5 — V/µs (VD = Rated VDRM, ITM = 11.3 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C) Critical Rate of Rise of Off-State Voltage dv/dt — 100 — V/µs (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TJ = 125°C)

FIGURE 1 — CURRENT DERATING FIGURE 2 — POWER DISSIPATION

125 10 115 8.0 105 6.0 95 4.0 85 2.0 75001.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(RMS), RMS ON STATE CURRENT (AMPS) IT(RMS) RMS ON STATE CURRENT (AMPS) 2 Motorola Thyristor Device Data TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) P( A V ) , AVERAGE POWER DISSIPATION (WATTS),

FIGURE 3 — NORMALIZED GATE TRIGGER CURRENT FIGURE 4 — NORMALIZED GATE TRIGGER VOLTAGE

5.0 1.8 OFF-STATE VOLTAGE = 12 V OFF-STATE VOLTAGE = 12 V 1.6 3.0 1.4 2.0 QUADRANT 4 1.2 1 1.0 1.0 QUADRANT 3 0.814QUADRANTS 2 0.7 0.6 3 0.5 0.4 –60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 5 — NORMALIZED HOLDING CURRENT

2.0 GATE OPEN MAIN TERMINAL #1 1.0 0.7 0.5 MAIN TERMINAL #2 0.3 0.2 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C)

Motorola Thyristor Device Data 3

IGT, NORMALIZED GATE TRIGGER CURRENT (mA) I H , NORMALIZED HOLDING CURRENT (mA) VG T , NORMALIZED GATE TRIGGER VOLTAGE (VOLTS),

PACKAGE DIMENSIONS

NOTES: –T– SEATINGPLANE 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.

BFC3. DIMENSION Z DEFINES A ZONE WHERE ALL T S BODY AND LEAD IRREGULARITIES AREALLOWED.

INCHES MILLIMETERS 4 DIM MIN MAX MIN MAX

QAA0.570 0.620 14.48 15.75

STYLE 4: B 0.380 0.405 9.66 10.28123UPIN 1. MAIN TERMINAL1C0.160 0.190 4.07 4.82

H 2. MAIN TERMINAL2D0.025 0.035 0.64 0.88

3. GATE F 0.142 0.147 3.61 3.73

K 4. MAIN TERMINAL2G0.095 0.105 2.42 2.66H 0.110 0.155 2.80 3.93 Z J 0.014 0.022 0.36 0.55

K 0.500 0.562 12.70 14.27 L 0.045 0.055 1.15 1.39

LRN0.190 0.210 4.83 5.33

Q 0.100 0.120 2.54 3.04

VJR0.080 0.110 2.04 2.79

S 0.045 0.055 1.15 1.39

G T 0.235 0.255 5.97 6.47 D U 0.000 0.050 0.00 1.27

V 0.045 ––– 1.15 –––

N Z ––– 0.080 ––– 2.04 CASE 221A-04

(TO–220AB) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 Motorola Thyristor Device Data ◊ MAC218/D]
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