Download: SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers,

SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a TRIACs blocking to a conducting state for either polarity of applied anode voltage with positive 12 AMPERES RMS or negative gate triggering. 200 thru 800 VOLTS • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Sm...
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SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors

.designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a TRIACs blocking to a conducting state for either polarity of applied anode voltage with positive 12 AMPERES RMS or negative gate triggering. 200 thru 800 VOLTS • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat MT1 Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC212 Series) or Four Modes MT2 G (MAC212A Series) CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C, VDRM Volts 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC212-4, MAC212A4 200 MAC212-6, MAC212A6 400 MAC212-8, MAC212A8 600 MAC212-10, MAC212A10 800 On-State Current RMS (TC = +85°C) IT(RMS) 12 Amp Full Cycle Sine Wave 50 to 60 Hz Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C) ITSM 100 Amp preceded and followed by Rated Current Circuit Fusing Considerations (t = 8.3 ms) I2t 40 A2s Peak Gate Power (TC = +85°C, Pulse Width = 10 µs) PGM 20 Watts Average Gate Power (TC = +85°C, t = 8.3 ms) PG(AV) 0.35 Watt Peak Gate Current (TC = +85°C, Pulse Width = 10 µs) IGM 2 Amp Operating Junction Temperature Range TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data 3–83,

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2.1 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit Peak Blocking Current (Either Direction) IDRM (VD = Rated VDRM, Gate Open) TJ = 25°C — — 10 µA TJ = +125°C — — 2 mA Peak On-State Voltage (Either Direction) VTM — 1.3 1.75 Volts ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2% Gate Trigger Current (Continuous dc) IGT mA MT2(+), G(+) — 12 50 MT2(+), G(–) — 12 50 MT2(–), G(–) — 20 50 MT2(–), G(+) “A” SUFFIX ONLY — 35 75 Gate Trigger Voltage (Continuous dc) VGT Volts MT2(+), G(+) — 0.9 2 MT2(+), G(–) — 0.9 2 MT2(–), G(–) — 1.1 2 MT2(–), G(+) “A” SUFFIX ONLY — 1.4 2.5 (Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) 0.2 — — MT2(–), G(+) “A” SUFFIX ONLY 0.2 — — Holding Current (Either Direction) IH — 6 50 mA (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 500 mA) Turn-On Time tgt — 1.5 — µs (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5 — V/µs (VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms, Gate Unenergized, TC = +85°C) Critical Rate of Rise of Off-State Voltage dv/dt — 100 — V/µs (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +85°C)

FIGURE 1 — CURRENT DERATING FIGURE 2 — POWER DISSIPATION

125 28 115 α 20 α dc 105 α = 30° 16 α = CONDUCTION ANGLE α = 180° 90° α 12 95 90° 30° α 180° 8.0 85 α = CONDUCTION ANGLE dc 4.0 75002.0 4.0 6.0 8.0 10 12 14 0 2.0 4.0 6.0 8.0 10 12 14 IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP) 3–84 Motorola Thyristor Device Data TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) PD ( A V ) , AVERAGE POWER DISSIPATION (WATT),

FIGURE 3 — MAXIMUM ON-STATE CHARACTERISTICS FIGURE 4 — MAXIMUM NON-REPETITIVE SURGE CURRENT

100 100 40 CYCLE 5.0 T = 25°C TC = 70°CJ 20 2.0 f = 60 HzTJ = 125°C Surge is preceded and followed by rated current 1.0 0 1.0 2.0 3.0 5.0 7.0 10 0.5 NUMBER OF CYCLES 0.2 0.1 FIGURE 5 — TYPICAL GATE TRIGGER VOLTAGE 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 2.0 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 1.6 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 1.2 0.8 0.4 –60 –40 –20 0 20 40 60 80 TC, CASE TEMPERATURE (°C)

FIGURE 6 — TYPICAL GATE TRIGGER CURRENT FIGURE 7 — TYPICAL HOLDING CURRENT

2.0 2.8 1.6 OFF-STATE VOLTAGE = 12 Vdc 2.4 ALL MODES OFF-STATE VOLTAGE = 12 Vdc 2.0 ALL MODES 1.2 1.6 1.200–60 –40 –20 0 20 40 60 80 –60 –40 –20 0 20 40 60 80 TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

Motorola Thyristor Device Data 3–85

IGT, GATE TRIGGER CURRENT (NORMALIZED) IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) I H , HOLDING CURRENT (NORMALIZED) VG T , GATE TRIGGER VOLTAGE (NORMALIZED) ITSM, PEAK SURGE CURRENT (AMP),

FIGURE 8 – THERMAL RESPONSE

1.0 0.5 0.2 ZθJC(t) = r(t) • RθJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k t, TIME (ms) 3–86 Motorola Thyristor Device Data r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)]
15

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