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Order this document SEMICONDUCTOR TECHNICAL DATA by MAC210FP/D Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, ISOLATED TRIACs motor controls, heating controls and power supplies; or wherever full-wave silicon THYRISTORS gate controlled solid-state devices are needed. Triac type thyristors switch from a 10 AMPERES RMS blocking to a conducting state for either polarity of applied anode voltage with positive 200 thru 800 VOLTS or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctio...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MAC210FP/D Silicon Bidirectional Thyristors

.designed primarily for full-wave ac control applications, such as light dimmers, ISOLATED TRIACs motor controls, heating controls and power supplies; or wherever full-wave silicon THYRISTORS gate controlled solid-state devices are needed. Triac type thyristors switch from a 10 AMPERES RMS blocking to a conducting state for either polarity of applied anode voltage with positive 200 thru 800 VOLTS or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC210FP Series) or Four Modes (MAC210AFP Series) MT2 MT1 CASE 221C-02 G STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C) VDRM Volts 1/2 Sine Wave 50 to 60 Hz, Gate Open MAC210-4FP, MAC210A4FP 200 MAC210-6FP, MAC210A6FP 400 MAC210-8FP, MAC210A8FP 600 MAC210-10FP, MAC210A10FP 800 On-State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2) IT(RMS) 10 Amps Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C) ITSM 100 Amps preceded and followed by rated current Circuit Fusing (t = 8.3 ms) I2t 40 A2s Peak Gate Power (TC = +70°C, Pulse Width = 10 µs) PGM 20 Watts Average Gate Power (TC = +70°C, t = 8.3 ms) PG(AV) 0.35 Watt Peak Gate Current (TC = +70°C, Pulse Width = 10 µs) IGM 2 Amps RMS Isolation Voltage (TA = 25°C, Relative Humidity 20%) V(ISO) 1500 Volts Operating Junction Temperature TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +125 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2.2 °C/W Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data 1 Motorola, Inc. 1995, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Peak Blocking Current (Either Direction) IDRM (VD = Rated VDRM, Gate Open) TJ = 25°C — — 10 µA TJ = +125°C — — 2 mA Peak On-State Voltage (Either Direction) VTM — 1.2 1.65 Volts (ITM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%) Gate Trigger Current (Continuous dc) IGT mA (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms Minimum Gate Pulse Width = 2 µs) MT2(+), G(+) — 12 50 MT2(+), G(–) — 12 50 MT2(–), G(–) — 20 50 MT2(–), G(+) “A” SUFFIX ONLY — 35 75 Gate Trigger Voltage (Continuous dc) VGT Volts (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms Minimum Gate Pulse Width = 2 µs) MT2(+), G(+) — 0.9 2 MT2(+), G(–) — 0.9 2 MT2(–), G(–) — 1.1 2 MT2(–), G(+) “A” SUFFIX ONLY — 1.4 2.5 (Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) 0.2 — — MT2(–), G(+) “A” SUFFIX ONLY 0.2 — — Holding Current (Either Direction) IH — 6 50 mA (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 500 mA, TC = +25°C) Turn-On Time tgt — 1.5 — µs (Rated VDRM, ITM = 14 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5 — V/µs (VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms, Gate Unenergized, TC = +70°C) Critical Rate of Rise of Off-State Voltage dv/dt — 100 — V/µs (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +70°C) 2 Motorola Thyristor Device Data,

TYPICAL CHARACTERISTICS

130 14 CONDUCTION ANGLE = 360° CONDUCTION ANGLE = 360° 120 12 110 10 100 8 90 6 80 4 70 2 600012345678910012345678910 IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), RMS ON-STATE CURRENT (AMPS)

Figure 1. Current Derating Figure 2. Power Dissipation

100 100 40 CYCLE TJ = 25°C T = 70°C20C2f= 60 HzTJ = 125°C SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT101235710 0.5 NUMBER OF CYCLES

Figure 4. Maximum Nonrepetitive Surge Current

0.2 0.1 2 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 1.6 OFF-STATE VOLTAGE = 12 Vdc ALL MODES

Figure 3. Maximum On-State Characteristics

1.2 0.8 0.4 –60 –40 –20 0 20 40 60 80 TC, CASE TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Voltage Motorola Thyristor Device Data 3

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) i T , INSTANTANEOUS ON-STATE CURRENT (AMPS) VG T , GATE TRIGGER VOLTAGE (NORMALIZED) P I , PEAK SURGE CURRENT (AMP) D(A V ), AVERAGE POWER DISSIPATION (WATTS)

TSM

, 2 2.8 1.6 OFF-STATE VOLTAGE = 12 Vdc 2.4 OFF-STATE VOLTAGE = 12 Vdc ALL MODES ALL MODES 1.2 1.6 1.2 0.8 0.8 0.4 0.400–60 –40 –20 0 20 40 60 80 –60 –40 –20 0 20 40 60 80 TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

Figure 6. Typical Gate Trigger Current Figure 7. Typical Holding Current

0.5 0.2 ZθJC(t) = r(t) • RθJC 0.1 0.05 0.02 0.01 0.1 0.2 0.512520 50 100 200 5001k2k5k10 k t, TIME (ms)

Figure 8. Thermal Response

4 Motorola Thyristor Device Data r(t), TRANSIENT THERMAL RESISTANCEIGT, GATE TRIGGER CURRENT (NORMALIZED) (NORMALIZED) I H , HOLDING CURRENT (NORMALIZED),

PACKAGE DIMENSIONS

–T– SEATING NOTES: –B– PLANE 1. DIMENSIONING AND TOLERANCING PER ANSIF C Y14.5M, 1982.

P S 2. CONTROLLING DIMENSION: INCH. N 3. LEAD DIMENSIONS UNCONTROLLED WITHIN

DIMENSION Z. INCHES MILLIMETERS

E DIM MIN MAX MIN MAX A A 0.680 0.700 17.28 17.78 Q B 0.388 0.408 9.86 10.36H STYLE 3: C 0.175 0.195 4.45 4.95

123PIN 1. MT1D0.025 0.040 0.64 1.01 2. MT2E0.340 0.355 8.64 9.01 –Y– 3. GATE F 0.140 0.150 3.56 3.81 G 0.100 BSC 2.54 BSC

K H 0.110 0.155 2.80 3.93 Z J 0.018 0.028 0.46 0.71

K 0.500 0.550 12.70 13.97 L 0.045 0.070 1.15 1.77

LJN0.049 ––– 1.25 –––

P 0.270 0.290 6.86 7.36

GRQ0.480 0.500 12.20 12.70 D 3 PL R 0.090 0.120 2.29 3.04

S 0.105 0.115 2.67 2.92 0.25 (0.010) MBMYZ0.070 0.090 1.78 2.28

CASE 221C–02 Motorola Thyristor Device Data 5

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 Motorola Thyristor Device Data ◊ MAC210FP/D]
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