Download: SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers,

SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive TRIACs or negative gate triggering. 10 AMPERES RMS 200 thru 800 VOLTS • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Sm...
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SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors

.designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive TRIACs or negative gate triggering. 10 AMPERES RMS 200 thru 800 VOLTS • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability MT2 MT1 • Gate Triggering Guaranteed in Three Modes (MAC210 Series) or Four Modes G (MAC210A Series) CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Repetitive Peak Off-State Voltage(1) VDRM Volts (TJ = –40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC210-4, MAC210A4 200 MAC210-6, MAC210A6 400 MAC210-8, MAC210A8 600 MAC210-10, MAC210A10 800 On-State Current RMS (TC = +70°C) IT(RMS) 10 Amps Full Cycle Sine Wave 50 to 60 Hz Peak Non-repetitive Surge Current ITSM 100 Amps (One Full Cycle, 60 Hz, TC = +70°C) Preceded and followed by Rated Current Circuit Fusing Considerations I2t 40 A2s (t = 8.3 ms) Peak Gate Power PGM 20 Watts (TC = +70°C, Pulse Width = 10 µs) Average Gate Power (TC = +70°C, t = 8.3 ms) PG(AV) 0.35 Watt Peak Gate Current IGM 2 Amps (TC = +70°C, Pulse Width = 10 µs) Operating Junction Temperature Range TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +125 °C (1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data 3–75, THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2.2 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Peak Blocking Current IDRM (VD = Rated VDRM, Gate Open) TJ = 25°C — — 10 µA TJ = +125°C — — 2 mA Peak On-State Voltage (Either Direction) VTM — 1.2 1.65 Volts (ITM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%) Gate Trigger Current (Continuous dc) IGT mA MT2(+), G(+) — 12 50 MT2(+), G(–) — 12 50 MT2(–), G(–) — 20 50 MT2(–), G(+) “A” SUFFIX ONLY — 35 75 Gate Trigger Voltage (Continuous dc) VGT volts MT2(+), G(+) — 0.9 2 MT2(+), G(–) — 0.9 2 MT2(–), G(–) — 1.1 2 MT2(–), G(+) “A” SUFFIX ONLY — 1.4 2.5 (Main Terminal Voltage = Rated VDRM, RL = 10 k ohms, TJ = +125°C) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) 0.2 — — MT2(–), G(+) “A” SUFFIX ONLY 0.2 — — Holding Current (Either Direction) IH — 6 50 mA (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 500 mA, TC = +25°C) Turn-On Time tgt — 1.5 — µs (Rated VDRM, ITM = 14 A) (IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5 — V/µs (VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms, Gate Unenergized, TC = 70°C) Critical Rate of Rise of Off-State Voltage dv/dt — 100 — V/µs (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +70°C) 3–76 Motorola Thyristor Device Data,

FIGURE 1 — CURRENT DERATING FIGURE 2 — POWER DISSIPATION

130 14.0 CONDUCTION ANGLE = 360° CONDUCTION ANGLE = 360° 120 12.0 110 10.0 100 8.0 90 6.0 80 4.0 70 2.0 60001.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), RMS ON-STATE CURRENT (AMPS)

FIGURE 3 — MAXIMUM ON-STATE CHARACTERISTICS FIGURE 4 — MAXIMUM NON-REPETITIVE SURGE CURRENT

100 100 40 CYCLE 5.0 T = 25°C TC = 70°CJ 20 T = 125°C f = 60 Hz2.0 J Surge is preceded and followed by rated current 1.0 0 1.0 2.0 3.0 5.0 7.0 10 0.5 NUMBER OF CYCLES

FIGURE 5 — TYPICAL GATE TRIGGER VOLTAGE

0.1 2.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) OFF-STATE VOLTAGE = 12 Vdc 1.6 ALL MODES 1.2 0.8 0.4 –60 –40 –20 0 20 40 60 80 TC, CASE TEMPERATURE (°C)

Motorola Thyristor Device Data 3–77

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) I T , INSTANTANEOUS ON-STATE CURRENT (AMPS) VG T , GATE TRIGGER VOLTAGE (NORMALIZED) P ( A V ) , AVERAGE POWER DISSIPATIONITSM, PEAK SURGE CURRENT (AMP),

FIGURE 6 — TYPICAL GATE TRIGGER CURRENT FIGURE 7 — TYPICAL HOLDING CURRENT

2.0 2.8 2.4 1.6 OFF-STATE VOLTAGE = 12 Vdc OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2.0 ALL MODES 1.2 1.6 1.2 0.8 0.800–60 –40 –20 0 20 40 60 80 –60 –40 –20 0 20 40 60 80 TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

FIGURE 8 – THERMAL RESPONSE

1.0 0.5 ZθJC(t) = r(t) • RθJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k t, TIME (ms) 3–78 Motorola Thyristor Device Data r(t), TRANSIENT THERMAL RESISTANCEIGT, GATE TRIGGER CURRENT (NORMALIZED) (NORMALIZED) I H , HOLDING CURRENT (NORMALIZED)]
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