Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MAC15S/D Silicon Bidirectional Thyristors

Order this document SEMICONDUCTOR TECHNICAL DATA by MAC15S/D Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave control of ac TRIACS loads such as appliance controls, heater controls, motor controls, and other 15 AMPERES RMS power switching applications. 400 THRU 800 • VOLTSSensitive Gate allows Triggering by Microcontrollers and other Logic Circuits • High Immunity to dv/dt — 25 V/s minimum at 110C • High Commutating di/dt — 8.0 A/ms minimum at 110C MT2 • Minimum and Maximum Values of IGT, VGT and IH specified for ease of design • On-State Current...
Author: Gould Shared: 8/19/19
Downloads: 56 Views: 548

Content

Order this document SEMICONDUCTOR TECHNICAL DATA by MAC15S/D Silicon Bidirectional Thyristors

Designed for industrial and consumer applications for full wave control of ac TRIACS loads such as appliance controls, heater controls, motor controls, and other 15 AMPERES RMS power switching applications. 400 THRU 800 • VOLTSSensitive Gate allows Triggering by Microcontrollers and other Logic Circuits • High Immunity to dv/dt — 25 V/s minimum at 110C • High Commutating di/dt — 8.0 A/ms minimum at 110C MT2 • Minimum and Maximum Values of IGT, VGT and IH specified for ease of design • On-State Current Rating of 15 Amperes RMS at 70C • High Surge Current Capability — 120 Amperes • Blocking Voltage to 800 Volts MT1 MT2 • Rugged, Economical TO220AB Package G CASE 221A–06 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Off-State Voltage (1) VDRM Volts (TJ = –40 to 110°C, Sine Wave, 50 to 60Hz, Gate Open) MAC15SD 400 MAC15SM 600 MAC15SN 800 On-State RMS Current IT(RMS) 15 A (Full Cycle Sine Wave, 60Hz, TJ = 70°C) Peak Non-repetitive Surge Current ITSM 120 A (One Half Cycle, 60 Hz, TJ = 110°C) Circuit Fusing Consideration I2t 60 A2sec (t = 8.3 ms) Peak Gate Power PGM 20 Watts (Pulse Width ≤ 1.0 µs, TC = 70°C) Average Gate Power PG(AV) 0.5 Watts (t = 8.3 ms, TC = 70°C) Operating Junction Temperature Range TJ –40 to +110 °C Storage Temperature Range Tstg –40 to +150 °C THERMAL CHARACTERISTICS Thermal Resistance °C/W — Junction to Case RθJC 2.0 — Junction to Ambient RθJA 62.5 Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds TL 260 °C (1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. REV0MMoototorrolla, ITnch.y 1r9is95tor Device Data 1 Data Sheets,

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current IDRM mA (VD = Rated VDRM, Gate Open) TJ = 25°C — — 0.01 TJ = 110°C — — 2.0

ON CHARACTERISTICS

Peak On-State Voltage* (ITM = 21A) VTM — — 1.8 Volts Continuous Gate Trigger Current (VD = 12 V, RL = 100Ω) IGT mA MT2(+), G(+) .8 2.0 5.0 MT2(+), G(–) .8 3.0 5.0 MT2(–), G(–) .8 3.0 5.0 Hold Current (VD = 12 V, Gate Open, Initiating Current = 150mA) IH 1.0 3.0 10 mA Latching Current (VD = 24V, IG = 5mA) IL mA MT2(+), G(+) 2.0 5.0 15 MT2(+), G(–) 2.0 10 20 MT2(–), G(–) 2.0 5.0 15 Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100Ω) VGT Volts MT2(+), G(+) 0.45 0.62 1.5 MT2(+), G(–) 0.45 0.60 1.5 MT2(–), G(–) 0.45 0.65 1.5

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off–State Voltage (dv/dt)c 8.0 10 — A/ms (VD = 400V, ITM = 3.5A, Commutating dv/dt = 10V/sec, Gate Open, TJ = 110C, f= 500Hz, Snubber: CS = 0.01 F, RS =15, see figure 15. ) Critical Rate of Rise of Off-State Voltage dv/dt 25 75 — V/s (VD = Rate VDRM, Exponential Waveform, RGK = 510, TJ = 110C) * Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. 110 25

DC

α 180° 100 20 α 120° = 30 and 60° 90° = CONDUCTION ANGLE 90 15 60° α 80 α 10 120° = 30° = CONDUCTION ANGLE 70 5 180° 60 DC00246810 12 14 160246810 12 14 16 IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)

Figure 1.0 RMS Current Derating Figure 2.0 Maximum On–State Power Dissipation Data Sheets 2 Motorola Thyristor Device Data

TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS), 100 1 Typical @ TJ = 25 °C 10 Maximum @ ZJC(t) = RJC(t) r(t) TJ = 25 °C 0.1 Maximum @ TJ = 110°C 0.1 0.01 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0.1 1 10 100 1000 1 410 VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3.0 On–State Characteristics Figure 4.0 Transient Thermal Response

79685Q1 MT2 NEGATIVE63Q3 MT2 POSITIVE2312–40 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5.0 Typical Holding Current Versus Figure 6.0 Typical Latching Current Versus Junction Temperature Junction Temperature

7 0.9 6 0.8 0.7 Q3 4 Q3 0.6 3 Q1 Q2 0.5 2 Q2 1 Q1 0.4 0 0.3 –40 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7.0 Typical Gate Trigger Current Versus Figure 8.0 Typical Gate Trigger Voltage Versus Junction Temperature Junction Temperature Motorola Thyristor Device Data 3 Data Sheets

IGT, GATE TRIGGER CURRENT (mA) I H , HOLDING CURRENT (mA) I T, INSTANTANOUS ON-STATE CURRENT (AMPS) VGT, GATE TRIGGER VOLTAGE (VOLTS) I L , LATCHING CURRENT (mA) R(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED), 140 110 VPK = 400V TJ = 110°C TJ = 100°C 600V 110°C 100 80 800V 80 120°C RG – MT1 = 510 60 50 100 200 300 400 500 600 700 800 900 1000 400 450 500 550 600 650 700 750 800 RGK, GATE–MT1 RESISTANCE (OHMS) VPK, Peak Voltage (Volts)

Figure 9.0 Typical Exponential Static dv/dt Versus Figure 10.0 Typical Exponential Static dv/dt Versus Gate–MT1 Resistance, MT2(+). Peak Voltage, MT2(+).

110 180 100 160 T = 100°C VPK = 400V

J

80 110°C 600V 100 800V 120°C RG – MT1 = 510 R – MT1 = 510 50 G40 40 20 100 105 110 115 120 125 400 450 500 550 600 650 700 750 800 TJ, Junction Temperature (°C) VPK, Peak Voltage (Volts)

Figure 11.0 Typical Exponential Static dv/dt Versus Figure 12.0 Typical Exponential Static dv/dt Versus Junction Temperature, MT2(+) Peak Voltage, MT2(–)

200 100 90°C VPK = 400V 600V 100 10 100°C 800V1f= 2 tw 50 tw 110°C 6f I (di/dt)c =

TM

RG – MT1 = 510

VDRM

0 1 100 105 110 115 120 1251510 15 20 25 T , Junction Temperature (°C) (di/dt)c, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)J

Figure 13.0 Typical Exponential Static dv/dt Versus Figure 14.0 Critical Rate of Rise of Junction Temperature, MT2(–) Commutating Voltage Data Sheets 4 Motorola Thyristor Device Data

STATIC dv/dt (V/S) STATIC dv/dt (V/S) STATIC dv/dt (V/S) (dv/dt)c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ s) STATIC dv/dt (V/S) STATIC dv/dt (V/S), 20 mHY 1N4007 400 VRMS LL ADJUST FOR MEASURE ITM, 60 HzVIRS 15AC

CHARGE TRIGGER

CHARGE CONTROL – 400VC0.01 FS + ADJUST FOR 2 dv/dt 1N914 (c) 5 F 51 NON-POLARG1

CL

Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.

Figure 15.0 Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage Motorola Thyristor Device Data 5 Data Sheets

TRIGGER CONTROL,

NOTES

Data Sheets 6 Motorola Thyristor Device Data,

NOTES

Motorola Thyristor Device Data 7 Data Sheets,

PACKAGE DIMENSIONS

NOTES: –T– SEATINGPLANE 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

BFC2. CONTROLLING DIMENSION: INCH. T 3. DIMENSION Z DEFINES A ZONE WHERE ALLS BODY AND LEAD IRREGULARITIES ARE

ALLOWED. INCHES MILLIMETERS

Q A DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75123UB0.380 0.405 9.66 10.28C 0.160 0.190 4.07 4.82

H D 0.025 0.035 0.64 0.88

F 0.142 0.147 3.61 3.73

K STYLE 4: G 0.095 0.105 2.42 2.66 Z PIN 1. MAIN TERMINAL1H0.110 0.155 2.80 3.93

2. MAIN TERMINAL2J0.018 0.025 0.46 0.64 3. GATE K 0.500 0.562 12.70 14.27 4. MAIN TERMINAL 2

LRL0.045 0.060 1.15 1.52

N 0.190 0.210 4.83 5.33

VJQ0.100 0.120 2.54 3.04

R 0.080 0.110 2.04 2.79

G S 0.045 0.055 1.15 1.39 D T 0.235 0.255 5.97 6.47U 0.000 0.050 0.00 1.27 N CASE 221A–06 V 0.045 ––– 1.15 –––

(TO-220AB) Z ––– 0.080 ––– 2.04 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. To order literature by mail: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. JAPAN: Nippon Motorola Ltd.; 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. To order literature electronically: MFAX: email is hidden –TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com

Data Sheets ◊ 8 Motorola Thyristor DeMvAicCe1 D5Sa/tDa

]
15

Similar documents

SEMICONDUCTOR TECHNICAL DATA TRIACS 15 AMPERES RMS 400 thru 800 Designed for high performance full-wave ac control applications where high VOLTS noise immunity and high commutating di/dt are required.
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS 15 AMPERES RMS 400 thru 800 Designed for high performance full-wave ac control applications where high VOLTS noise immunity and high commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State Current Rating of 15 Amperes
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS Designed for high performance full-wave ac control applications where high 15 AMPERES RMS
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS Designed for high performance full-wave ac control applications where high 15 AMPERES RMS noise immunity and high commutating di/dt are required. 400 thru 800 • Blocking Voltage to 800 Volts VOLTS • On-State Current Rating of 15 Amperes
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristor
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type th
*Motorola preferred devices Silicon Bidirectional Thyristors TRIACS12 AMPERES RMS
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices Silicon Bidirectional Thyristors TRIACS12 AMPERES RMS 400 thru 800 Designed for high performance full–wave ac control applications where high VOLTS noise immunity and commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State C
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors *Motorola preferred devices Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. TRIAC • Sensitive Gate
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8/D 8 AMPERES RMS
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8/D *Motorola preferred devices SCRs 8 AMPERES RMS 400 thru 800 Designed primarily for half–wave ac control applications, such as motor VOLTS controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices
Order this document *Motorola preferred devices SCRs
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8S/D *Motorola preferred devices SCRs 8 AMPERES RMS Designed primarily for half–wave ac control applications, such as motor 400 thru 800 controls, heating controls, and power supplies; or wherever half–wave, silicon VOLTS gate–controlled devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DSM/D Reverse Blocking Thyristors Motorola Preferred Devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DSM/D Reverse Blocking Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size SCRs • Passivated D
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DCM/D Reverse Blocking Thyristors Motorola Preferred Devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DCM/D Reverse Blocking Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size SCRs • Passivated D
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR72/D Reverse Blocking Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR72/D Reverse Blocking Triode Thyristors .designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gate
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR703A/D Reverse Blocking Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR703A/D Reverse Blocking Triode Thyristors .PNPN devices designed for high volume, low cost consumer applications such as *Motorola preferred devices temperature, light and speed control; process and remote control; and warning systems where reli
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR506/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR506/D .PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Passivated Surface for Reliability a
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR310/D Reverse Blocking Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR310/D Reverse Blocking Triode Thyristors .designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gat
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR265-2/D Silicon Controlled Rectifiers
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR265-2/D Silicon Controlled Rectifiers .designed for inverse parallel SCR output devices for solid state relays, welders, battery chargers, motor controls or applications requiring high surge operation. • Photo Glass Passivated Blocking Junctions
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR25/D *Motorola preferred devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR25/D *Motorola preferred devices Designed primarily for half–wave ac control applications, such as motor SCRs controls, heating controls, and power supplies; or wherever half–wave, silicon 25 AMPERES RMS gate–controlled devices are needed. 400 t
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR264-4/D Silicon Controlled Rectifiers
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR264-4/D Silicon Controlled Rectifiers SCRs .designed for back-to-back SCR output devices for solid state relays or applications 40 AMPERES RMS requiring high surge operation. 200 thru 800 VOLTS • Photo Glass Passivated Blocking Junctions for Hig
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR225FP/D Reverse Blocking Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR225FP/D Reverse Blocking Thyristors .designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. ISOLATED SCRs 25 AMPERES RMS • Glass Passivated Junctions with Center Gate
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR22-2/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR22-2/D .designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low-power switching applications. • 150 Amperes for 2 µs Safe Area • High dv/dt • Very Low Forward “On” Voltage
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR218FP/D Reverse Blocking Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR218FP/D Reverse Blocking Thyristors .designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. ISOLATED SCRs • Glass Passivated Junctions with Center Gate Fire for Great
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR16/D *Motorola preferred devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR16/D *Motorola preferred devices Designed primarily for half–wave ac control applications, such as motor SCRs controls, heating controls, and power supplies; or wherever half–wave, silicon 16 AMPERES RMS gate–controlled devices are needed. 400 t
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR218/D Silicon-Controlled Rectifiers
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR218/D Silicon-Controlled Rectifiers .designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. SCRs 8 AMP
Order this document *Motorola preferred devices 12 AMPERES RMS
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR12/D *Motorola preferred devices SCRs 12 AMPERES RMS 400 thru 800 Designed primarily for half–wave ac control applications, such as motor VOLTS controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled device
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR12DSM/D Reverse Blocking Thyristors Motorola Preferred Devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR12DSM/D Reverse Blocking Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size SCRs • Passivated
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR12DCM/D Reverse Blocking Thyristors Motorola Preferred Devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR12DCM/D Reverse Blocking Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size SCRs • Passivated
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR106/D Reverse Blocking Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR106/D Reverse Blocking Triode Thyristors *Motorola preferred devices except MCR106–3 PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR102/D Reverse Blocking Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR102/D Reverse Blocking Triode Thyristors Annular PNPN devices designed for low cost, high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR08BT1/D Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors *Motorola preferred devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR08BT1/D Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors *Motorola preferred devices PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyri
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR100/D Reverse Blocking Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR100/D Reverse Blocking Triode Thyristors *Motorola preferred devices PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing
Order this document SEMICONDUCTOR TECHNICAL DATA by MBS4991/D Diode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MBS4991/D Diode Thyristors .designed for full-wave triggering in Triac phase control circuits, half-wave SCR triggering application and as voltage level detectors. Supplied in an inexpensive plastic TO-226AA package for high-volume requirements, th