Download: SEMICONDUCTOR TECHNICAL DATA TRIACS 15 AMPERES RMS 400 thru 800 Designed for high performance full-wave ac control applications where high VOLTS noise immunity and high commutating di/dt are required.

SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS 15 AMPERES RMS 400 thru 800 Designed for high performance full-wave ac control applications where high VOLTS noise immunity and high commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State Current Rating of 15 Amperes RMS at 80°C MT2 • Uniform Gate Trigger Currents in Three Modes • High Immunity to dv/dt — 500 V/µs minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating di/dt — 9.0 A/ms minimum at 125°C MT1 MT2 G CASE 221A-06 (TO-220AB) Style 4 MAXIMUM...
Author: Gould Shared: 8/19/19
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SEMICONDUCTOR TECHNICAL DATA

*Motorola preferred devices

TRIACS

15 AMPERES RMS 400 thru 800 Designed for high performance full-wave ac control applications where high VOLTS noise immunity and high commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State Current Rating of 15 Amperes RMS at 80°C MT2 • Uniform Gate Trigger Currents in Three Modes • High Immunity to dv/dt — 500 V/µs minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating di/dt — 9.0 A/ms minimum at 125°C MT1 MT2

G

CASE 221A-06 (TO-220AB) Style 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit VDRM Peak Repetitive Off-State Voltage, (1) Volts (–40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC16D 400 MAC16M 600 MAC16N 800 IT(RMS) On-State RMS Current 15 A (60 Hz, TC = 80°C) ITSM Peak Non-repetitive Surge Current 150 A (One Full Cycle, 60 Hz, TJ = 125°C) I2t Circuit Fusing Consideration (t = 8.3 ms) 93 A2sec PGM Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) 20 Watts PG(AV) Average Gate Power (t = 8.3 ms, TC = 80°C) 0.5 Watts TJ Operating Junction Temperature Range –40 to +125 °C Tstg Storage Temperature Range –40 to +150 °C THERMAL CHARACTERISTICS RθJC Thermal Resistance — Junction to Case 2.0 °C/W RθJA Thermal Resistance — Junction to Ambient 62.5 TL Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds 260 °C (1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data 3–67,

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol Characteristic Min Typ Max Unit

OFF CHARACTERISTICS

IDRM Peak Repetitive Blocking Current mA (VD = Rated VDRM, Gate Open) TJ = 25°C — — 0.01 TJ = 125°C — — 2.0

ON CHARACTERISTICS

VTM Peak On-State Voltage* Volts (ITM = ±21 A Peak) — 1.2 1.6 IGT Continuous Gate Trigger Current (VD = 12 V, RL = 100 Ω) mA MT2(+), G(+) 10 16 50 MT2(+), G(–) 10 18 50 MT2(–), G(–) 10 22 50 IH Hold Current mA (VD = 12 V, Gate Open, Initiating Current = ±150 mA) — 20 50 IL Latch Current (VD = 24 V, IG = 50 mA) mA MT2(+), G(+) — 33 50 MT2(+), G(–) — 36 80 MT2(–), G(–) — 33 50 VGT Gate Trigger Voltage (VD = 12 V, RL = 100 Ω) Volts MT2(+), G(+) 0.5 0.75 1.5 MT2(+), G(–) 0.5 0.72 1.5 MT2(–), G(–) 0.5 0.82 1.5

DYNAMIC CHARACTERISTICS

(di/dt)c Rate of Change of Commutating Current* See Figure 10. 9.0 — — A/ms (VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/µs, CL = 10 µF Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) LL = 40 mH dv/dt Critical Rate of Rise of Off-State Voltage 500 — — V/µs (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) *Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. 125 20 DC 180° 120 18 115 16 120° α = 30 and 60° 90°14 110 60° α = 90° 12 α = 180° α = 120° 108α= 30° DC 6 90 4 85 2 8000246810 12 14 160246810 12 14 16 IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), ON-STATE CURRENT (AMP)

Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation

3–68 Motorola Thyristor Device Data TC, CASE TEMPERATURE (°C) PAV, AVERAGE POWER (WATTS), 100 1 TYPICAL AT MAXIMUM @ TJ = 125°C TJ = 25°C 0.1 0.01 0.1 1 10 100 1000 1 · 104 t, TIME (ms)

Figure 4. Thermal Response

MAXIMUM @ TJ = 25°C 40 MT2 POSITIVE MT2 NEGATIVE 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 5– 40 – 10 20 50 80 110 125 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. On-State Characteristics Figure 5. Hold Current Variation

100 1 OFF-STATE VOLTAGE = 12 V RL = 140 Ω Q2 Q3 Q1 Q1 Q3 Q2 OFF-STATE VOLTAGE = 12 V RL = 140Ω10.5 – 40 – 10 20 50 80 110 125 – 40 – 10 +20 50 80 110 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation Motorola Thyristor Device Data 3–69

IGT, GATE TRIGGER CURRENT (mA) I T, INSTANTANEOUS ON-STATE CURRENT (AMP) r(t), TRANSIENT THERMAL RESISTANCE VGT, GATE TRIGGER VOLTAGE (VOLT) IH, HOLD CURRENT (mA) (NORMALIZED), 5000 100 VD = 800 Vpk 4K TJ = 125°C 3K TJ = 125°C 100°C 75°C 2K

ITM

f = 1K tw 2 tw 6f I (di/dt) = TMc VDRM 10000110 100 1000 10000 10 20 30 40 50 60 70 80 90 100 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 8. Critical Rate of Rise of Off-State Voltage Figure 9. Critical Rate of Rise of

(Exponential) Commutating Voltage LL 1N4007 200 VRMS ADJUST FOR MEASURE ITM, 60 Hz VAC I

CHARGE

TRIGGER CONTROL –CHARGE 400 V + 1N914 51 NON-POLAR G 1CL Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.

Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage

3–70 Motorola Thyristor Device Data dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) (dv/dt)c , CRITICAL RATE OF RISE OF TRIGGER CONTROL COMMUTATING VOLTAGE(V/µs)]
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