Download: SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays,

SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. ISOLATED TRIACs • Blocking Voltage to 800 Volts THYRISTORS • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity 15 AMPERES RMS and Stabilit...
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SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors

.designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. ISOLATED TRIACs • Blocking Voltage to 800 Volts THYRISTORS • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity 15 AMPERES RMS and Stability 200 thru 800 VOLTS • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC15FP Series) or Four Modes (MAC15AFP Series) MT2 MT1 CASE 221C-02 G STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C, VDRM Volts 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC15-4FP, MAC15A4FP 200 MAC15-6FP, MAC15A6FP 400 MAC15-8FP, MAC15A8FP 600 MAC15-10FP, MAC15A10FP 800 On-State RMS Current (TC = +80°C)(2) IT(RMS) 15 Amps Full Cycle Sine Wave 50 to 60 Hz (TC = +95°C) 12 Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) ITSM 150 Amps preceded and followed by rated current Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) PGM 20 Watts Average Gate Power (TC = +80°C, t = 8.3 ms) PG(AV) 0.5 Watt Peak Gate Current IGM 2 Amps Peak Gate Voltage VGM 10 Volts RMS Isolation Voltage (TA = 25°C, Relative Humidity 20%) V(ISO) 1500 Volts Operating Junction Temperature TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data 3–63, THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2 °C/W Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Peak Blocking Current (Either Direction) TJ = 25°C IDRM — — 10 µA (VD = Rated VDRM, TJ = 125°C, Gate Open) — — 2 mA Peak On-State Voltage (Either Direction) VTM — 1.3 1.6 Volts (ITM = 21 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%) Gate Trigger Current (Continuous dc) IGT mA MT2(+), G(+) — — 50 MT2(+), G(–) — — 50 MT2(–), G(–) — — 50 MT2(–), G(+) “A” SUFFIX ONLY — — 75 Gate Trigger Voltage (Continuous dc) VGT Volts MT2(+), G(+) — 0.9 2 MT2(+), G(–) — 0.9 2 MT2(–), G(–) — 1.1 2 MT2(–), G(+) “A” SUFFIX ONLY — 1.4 2.5 (Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +110°C) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) 0.2 — — MT2(–), G(+) “A” SUFFIX ONLY 0.2 — — Holding Current (Either Direction) IH — 6 40 mA (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 200 mA) Turn-On Time tgt — 1.5 — µs (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5 — V/µs (VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms, Gate Unenergized, TC = 80°C) Trigger devices are recommended for gating on Triacs. They provide: QUADRANT DEFINITIONS 1. Consistent predictable turn-on points. MT2(+) 2. Simplified circuitry. QUADRANT II QUADRANT I 3. Fast turn-on time for cooler, more efficient and reliable operation. MT2(+), G(–) MT2(+), G(+) ELECTRICAL CHARACTERISTICS of RECOMMENDED BIDIRECTIONAL SWITCHES Usage General G(–) G(+) Part Number MBS4991 MBS4992 QUADRANT III QUADRANT IV VS 6–10 V 7.5–9 V MT2(–), G(–) MT2(–), G(+) IS 350 µA Max 120 µA Max VS1–VS2 0.5 V Max 0.2 V Max MT2(–) Temperature 0.02%/°C Typ Coefficient 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. 3–64 Motorola Thyristor Device Data,

TYPICAL CHARACTERISTICS

130 3 OFF-STATE VOLTAGE = 12 Vdc 30° ALL MODES2 60° 90° 125°C 1 150° to 180° 100 0.7 dc α 90 0.5α α = CONDUCTION ANGLE 80 0.30246810 12 14 16 –60 –40 –20 0 20 40 60 80 100 120 140 IT(RMS), RMS ON-STATE CURRENT (AMP) TJ, JUNCTION TEMPERATURE (°C)

Figure 1. RMS Current Derating Figure 4. Typical Gate Trigger Current

20 100 α = 180° 16 TJ = 125°C 120° dc 90° 50 TJ = 25°C α 12 60° 125°C30 α 30° 8 α = CONDUCTION ANGLE 20070246810 12 14 16 IT(RMS), RMS ON-STATE CURRENT (AMP)

Figure 2. On-State Power Dissipation 3

OFF-STATE VOLTAGE = 12 Vdc ALL MODES210.7 1 0.5 0.7 0.3 0.5 0.2 0.3 –60 –40 –20 0 20 40 60 80 100 120 140 0.1 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 TJ, JUNCTION TEMPERATURE (°C) vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 3. Typical Gate Trigger Voltage Figure 5. Maximum On-State Characteristics Motorola Thyristor Device Data 3–65

VGTM, GATE TRIGGER VOLTAGE (NORMALIZED) PD ( A V ) , AVERAGE POWER DISSIPATION (WATTS) T C , CASE TEMPERATURE ( ° C) iIGT,M , GATE TRIGGER CURRENT (NORMALIZED)F , INSTANTANEOUS FORWARD CURRENT (AMP), 3 300 GATE OPEN APPLIES TO EITHER DIRECTION 2 200 1 100 0.7 70 0.5 50 TC = 80°C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 0.3 30 –60 –40 –20 0 20 40 60 80 100 120 1401235710 TJ, JUNCTION TEMPERATURE (°C) NUMBER OF CYCLES

Figure 6. Typical Holding Current Figure 7. Maximum Nonrepetitive Surge Current

0.5 0.2 ZθJC(t) = r(t) • RθJC 0.1 0.05 0.02 0.01 0.1 0.2 0.512510 20 50 100 200 5001k2k5k10 k t, TIME (ms)

Figure 8. Thermal Response

3–66 Motorola Thyristor Device Data r(t), TRANSIENT THERMAL RESISTANCEIH, HOLDING CURRENT (NORMALIZED)(NORMALIZED) ITSM, PEAK SURGE CURRENT (AMP)]
15

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