Download: SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays,

SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. TRIACs 15 AMPERES RMS • Blocking Voltage to 800 Volts 200 thru 800 VOLTS • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and St...
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SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Triode Thyristors

.designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. TRIACs 15 AMPERES RMS • Blocking Voltage to 800 Volts 200 thru 800 VOLTS • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC15 Series) or Four Modes MT2 MT1 (MAC15A Series)

G

CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Peak Repetitive Off-State Voltage(1) VDRM Volts (Gate Open, TJ = –40 to +125°C) MAC15-4, MAC15A4 200 MAC15-6, MAC15A6 400 MAC15-8, MAC15A8 600 MAC15-10, MAC15A10 800 Peak Gate Voltage VGM 10 Volts On-State Current RMS IT(RMS) 15 Amps Full Cycle Sine Wave 50 to 60 Hz (TC = +90°C) Circuit Fusing (t = 8.3 ms) I2t 93 A2s Peak Surge Current ITSM 150 Amps (One Full Cycle, 60 Hz, TC = +80°C) Preceded and followed by rated current Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) PGM 20 Watts Average Gate Power (TC = +80°C, t = 8.3 ms) PG(AV) 0.5 Watt Peak Gate Current IGM 2 Amps Operating Junction Temperature Range TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2 °C/W 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. REV 1 Motorola Thyristor Device Data 3–59,

ELECTRICAL CHARACTERISTICS (TC = 25°C, and either polarity of MT2 to MT1 Voltage, unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit Peak Blocking Current IDRM (VD = Rated VDRM, Gate Open) TJ = 25°C — — 10 µA TJ = 125°C — — 2 mA Peak On-State Voltage VTM — 1.3 1.6 Volts (ITM = 21 A Peak; Pulse Width = 1 or 2 ms, Duty Cycle 2%) Gate Trigger Current (Continuous dc) IGT mA (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) — — 50 MT2(+), G(–) — — 50 MT2(–), G(–) — — 50 MT2(–), G(+) “A” SUFFIX ONLY — — 75 Gate Trigger Voltage (Continuous dc) VGT Volts (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) — 0.9 2 MT2(+), G(–) — 0.9 2 MT2(–), G(–) — 1.1 2 MT2(–), G(+) “A” SUFFIX ONLY — 1.4 2.5 (VD = Rated VDRM, RL = 10 k Ohms, TJ = 110°C) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) 0.2 — — MT2(–), G(+) “A” SUFFIX ONLY 0.2 — — Holding Current (Either Direction) IH — 6 40 mA (VD = 12 Vdc, Gate Open) (IT = 200 mA) Turn-On Time tgt — 1.5 — µs (VD = Rated VDRM, ITM = 17 A) (IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5 — V/µs (VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms, Gate Unenergized, TC = 80°C)

FIGURE 1 – RMS CURRENT DERATING FIGURE 2 – ON-STATE POWER DISSIPATION

130 20 α = 180° α = 30° 120 16 TJ ≈ 125°C 120° α = 60° dc 90° α = 90° 110 α12 60° α α = 180° 30° 1008α= CONDUCTION ANGLE dc α 90 4α TJ ≈ 125° α = CONDUCTION ANGLE 8000246810 12 14 160246810 12 14 16 IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), ON-STATE CURRENT (AMP) 3–60 Motorola Thyristor Device Data TC , CASE TEMPERATURE ( ° C) PA V , AVERAGE POWER (WATTS),

FIGURE 3 – TYPICAL GATE TRIGGER VOLTAGE FIGURE 4 – TYPICAL GATE TRIGGER CURRENT

1.8 50 OFF-STATE VOLTAGE = 12 V OFF-STATE VOLTAGE = 12 V 1.6 1.4 QUADRANT 4 20 1.2 1.0 0.8 1 10 1 QUADRANTS 2 QUADRANT 0.6 7.0 33 4 0.4 5.0 –60 –40 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140 –20 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 5 – ON-STATE CHARACTERISTICS FIGURE 6 – TYPICAL HOLDING CURRENT

100 20 GATE OPEN MAIN TERMINAL #1 50 POSITIVETJ = 25°C 10 125°C 30 7.0 20 5.0 MAIN TERMINAL #2

POSITIVE

10 3.0 7 2.0 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) 2 FIGURE 7 – MAXIMUM NON-REPETITIVE SURGE CURRENT 1 200 0.7 0.5 0.3 70 0.2 50 TC = 80°C f = 60 Hz Surge is preceded and followed by rated current 0.1 30 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.41235710 vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) NUMBER OF CYCLES

Motorola Thyristor Device Data 3–61

iTM, INSTANTANEOUS FORWARD CURRENT (AMP) Vg t , GATE TRIGGER VOLTAGE (VOLTS) T , PEAK SURGE CURRENT (AMP) I , HOLDING CURRENT (mA) IGT, GATE TRIGGER CURRENT (mA)SM H,

FIGURE 8 – THERMAL RESPONSE

0.5 0.2 ZθJC(t) = r(t) • RθJC 0.1 0.05 0.02 0.01 0.1 0.2 0.512510 20 50 100 200 5001k2k5k10 k t, TIME (ms) 3–62 Motorola Thyristor Device Data r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)]
15

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