Download: *Motorola preferred devices Silicon Bidirectional Thyristors TRIACS12 AMPERES RMS

SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices Silicon Bidirectional Thyristors TRIACS12 AMPERES RMS 400 thru 800 Designed for high performance full–wave ac control applications where high VOLTS noise immunity and commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State Current Rating of 12 Amperes RMS at 70°C MT2 • Uniform Gate Trigger currents in Three Modes • High Immunity to dv/dt — 250 V/µs minimum at 125°C • High Commutating di/dt — 6.5 A/ms minimum at 125°C • Industry Standard TO–220 AB Package • High Surge Current Capability — 120 Amperes MT1 MT2 G CASE 221A...
Author: Gould Shared: 8/19/19
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SEMICONDUCTOR TECHNICAL DATA

*Motorola preferred devices

Silicon Bidirectional Thyristors TRIACS12 AMPERES RMS

400 thru 800 Designed for high performance full–wave ac control applications where high VOLTS noise immunity and commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State Current Rating of 12 Amperes RMS at 70°C MT2 • Uniform Gate Trigger currents in Three Modes • High Immunity to dv/dt — 250 V/µs minimum at 125°C • High Commutating di/dt — 6.5 A/ms minimum at 125°C • Industry Standard TO–220 AB Package • High Surge Current Capability — 120 Amperes MT1 MT2

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CASE 221A–06 (TO-220AB) Style 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Off-State Voltage (1) VDRM Volts (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12D 400 MAC12M 600 MAC12N 800 On-State RMS Current IT(RMS) 12 A (Full Cycle Sine Wave, 60 Hz, TC = 70°C) Peak Non-repetitive Surge Current ITSM 100 A (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) I2t 41 A2sec Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PGM 16 Watts Average Gate Power (t = 8.3 ms, TC = 80°C) PG(AV) 0.35 Watts Operating Junction Temperature Range TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case RθJC 2.2 °C/W Thermal Resistance — Junction to Ambient RθJA 62.5 Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current TJ = 25°C IDRM — — 0.01 mA (VD = Rated VDRM, Gate Open) TJ =1 25°C — — 2.0 (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. This document contains information on a new product. Specifications and information herein are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data 3–53, ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS Peak On-State Voltage* (ITM = ±17 A) VTM — — 1.85 Volts Continuous Gate Trigger Current (VD = 12 V, RL = 100 Ω) IGT mA MT2(+), G(+) 5.0 13 35 MT2(+), G(–) 5.0 16 35 MT2(–), G(–) 5.0 18 35 Hold Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA) IH — 20 40 mA Latch Current (VD = 24 V, IG = 35 mA) IL mA MT2(+), G(+); MT2(–), G(–) — 20 50 MT2(+), G(–) — 30 80 Gate Trigger Voltage (VD = 12 V, RL = 100 Ω) VGT Volts MT2(+), G(+) 0.5 0.69 1.5 MT2(+), G(–) 0.5 0.77 1.5 MT2(–), G(–) 0.5 0.72 1.5 DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current* (dv/dt)c 6.5 — — A/ms (VD = 400 V, ITM =4.4A, Commutating dv/dt = 18 V/µs, Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) Critical Rate of Rise of Off–State Voltage dv/dt 250 — — V/µs (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) *Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. 3–54 Motorola Thyristor Device Data]
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