Download: SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in

SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors *Motorola preferred devices Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. TRIAC • Sensitive Gate Trigger Current in Four Trigger Modes 0.8 AMPERE RMS • Blocking Voltage to 600 Volts 200 thru 600 Volts • Glass Passivated Surface for Reliability and Uniformity • Surface Mount Package • Devices Supplied on1KReel CASE 318E-04 (SOT-223) STYLE 11 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Ra...
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SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors

*Motorola preferred devices Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing.

TRIAC

• Sensitive Gate Trigger Current in Four Trigger Modes 0.8 AMPERE RMS • Blocking Voltage to 600 Volts 200 thru 600 Volts • Glass Passivated Surface for Reliability and Uniformity • Surface Mount Package • Devices Supplied on1KReel CASE 318E-04 (SOT-223) STYLE 11 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Blocking Voltage(1) VDRM Volts (1/2 Sine Wave, Gate Open, TJ = 25 to 110°C) MAC08BT1 200 MAC08DT1 400 MAC08MT1 600 On-State Current RMS (TC = 80°C) IT(RMS) 0.8 Amps Peak Non-repetitive Surge Current ITSM 10 Amps (One Full Cycle, 60 Hz, TC = 25°C) Circuit Fusing Considerations (t = 8.3 ms) I2t 0.4 A2s Peak Gate Power (t < 2.0 µs) PGM 5.0 Watts Average Gate Power (TC = 80°C, t = 8.3 ms) PG(AV) 0.1 Watts Operating Junction Temperature Range TJ –40 to +110 °C Storage Temperature Range Tstg –40 to +150 °C Maximum Device Temperature for Soldering Purposes (for 5 Seconds Maximum) TL 260 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 156 °C/W PCB Mounted per Figure 1 Thermal Resistance, Junction to Tab RθJT 25 °C/W Measured on Anode Tab Adjacent to Epoxy 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 3–40 Motorola Thyristor Device Data,

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit Peak Repetitive Blocking Current IDRM (VD = Rated VDRM Gate Open) TJ = 25°C — — 10 µA TJ = 110°C — — 200 µA Maximum On-State Voltage (Either Direction) VTM — — 1.9 Volts (IT = 1.1 A Peak, TA = 25°C) Gate Trigger Current (Continuous dc) All Quadrants IGT — — 10 mA (VD = 7.0 Vdc, RL = 100 Ω) Holding Current (Either Direction) IH — — 5.0 mA (VD = 7.0 Vdc, Gate Open, Initiating Current = 20 mA, Gate Open) Gate Trigger Voltage (Continuous dc) All Quadrants VGT — — 2.0 Volts (VD = 7.0 Vdc, RL = 100 Ω) Critical Rate of Rise of Commutation Voltage dv/dtc 1.5 — — V/µs (f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS On-State Current Duration = 2.0 mS, VDRM = 200 V, Gate Unenergized, TC = 110°C, Gate Source Resistance = 150 Ω, See Figure 10) Critical Rate-of-Rise of Off State Voltage dv/dt 10 — — V/µs (Vpk = Rated VDRM, TC = 110°C, Gate Open, Exponential Method) 0.15 3.8 0.244 0.091 0.091 6.2 2.3 2.3 inches0.059 0.059 0.059 mm BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. 0.984 1.5 1.5 1.5 BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. 25.0 MATERIAL: G10 FIBERGLASS BASE EPOXY 0.096 0.096 0.096 2.44 2.44 2.44 0.059 0.059 1.5 1.5 0.472 12.0

Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 Motorola Thyristor Device Data 3–41

, 10 160 150 TYPICAL L 140 MAXIMUM 120 DEVICE MOUNTED ON1.0 LFIGURE 1 AREA = L2 110 4PCB WITH TAB AREA 100 AS SHOWN 901230.1 70 TYPICAL AT TJ = 110°C 60 MAX AT TJ = 110°C 50 MINIMUM MAX AT TJ = 25°C 40 FOOTPRINT = 0.076 cm 0.01 30 0 1.0 2.0 3.0 4.0 5.0 0 2.0 4.0 6.0 8.0 10 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) FOIL AREA (cm2)

Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal Resistance versus Copper Tab Area

110 110 α 100 100 30° α 30° 90 60° 90 60° 90° α =CONDUCTION 90° 80 ANGLE 80 dc dc 70 70 α = 180° α = 180° 60 120° 60 120° 50 50 1.0 cm2 FOIL AREA α MINIMUM FOOTPRINT 50 OR 60 Hz 40 α50 OR 60 Hz 40 30 30 α =CONDUCTION

ANGLE

20 20 0 0.1 0.2 0.3 0.4 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), RMS ON-STATE CURRENT (AMPS)

Figure 4. Current Derating, Minimum Pad Size Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature Reference: Ambient Temperature

110 110 α 30° 100 α30° 105 dc 60° 60° α =CONDUCTION 90 dc 90° ANGLE 100αα= 180° = 180° 80 95 120° 90°120° 70 90 REFERENCE: α 4.0 cm2 FOIL AREA FIGURE1α60 85 α =CONDUCTION

ANGLE

50 80 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), ON-STATE CURRENT (AMPS)

Figure 6. Current Derating, 2.0 cm Square Pad Figure 7. Current Derating Reference: Ambient Temperature Reference: MT2 Tab

3–42 Motorola Thyristor Device Data TA , MAXIMUM ALLOWABLE TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( ° C) AMBIENT TEMPERATURE ( ° C) IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) T(tab), MAXIMUM ALLOWABLE TA , MAXIMUM ALLOWABLE Rθ JA, JUNCTION TO AMBIENT THERMAL TAB TEMPERATURE (° C) AMBIENT TEMPERATURE ( ° C) RESISTANCE, ° C/W, 1.0 1.0 0.9αα0.8 0.7 α =CONDUCTION

ANGLE

0.6 120° 0.5 0.1 30° 0.4 α = 180° 60° 0.3 dc 90° 0.2 0.1 0 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0001 0.001 0.01 0.1 1.0 10 100 IT(RMS), RMS ON-STATE CURRENT (AMPS) t, TIME (SECONDS)

Figure 8. Power Dissipation Figure 9. Thermal Response, Device Mounted on Figure 1 Printed Circuit Board

80 mHY 1N4007

LL

MEASURE I RS 56 75 VRMS, ADJUST FOR CHARGE – ITM, 60 Hz V

TRIGGER

AC CONTROL 200 V 0.047 CS 2 +ADJUST FOR CHARGE 1N914 dv/dt(c) 5 µF 51 NON-POLARG1

CL

Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.

Figure 10. Simplified Q1 (dv/dt)c Test Circuit

10 10 60 Hz 80° 60° 180 Hz 400 Hz 300 Hz I 110°TM 100° VDRM = 200 V twf12tw 6f I (didt) TMV 1.0 DRM c 1000 1.0 1.0 10 60 70 80 90 100 110 di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS) TJ, JUNCTION TEMPERATURE (°C)

Figure 11. Typical Commutating dv/dt versus Figure 12. Typical Commutating dv/dt versus Current Crossing Rate and Junction Temperature Junction Temperature at 0.8 Amps RMS Motorola Thyristor Device Data 3–43

COMMUTATING dv/dt P(AV), MAXIMUM AVERAGE dv/dt c , (V/ µ S) POWER DISSIPATION (WATTS) TRIGGER CONTROL COMMUTATING dv/dt r(t), TRANSIENT THERMAL dv/dt c , (V/ µ S) RESISTANCE (NORMALIZED), 60 10 600 Vpk IGT3 TJ = 110°C 50 MAIN TERMINAL #2 IGT2 POSITIVE IGT4 IGT1 40 1.0 30 MAIN TERMINAL #1

POSITIVE

20 0.1 10 100 1000 10,000 –40 –20 0 20 40 60 80 100 RG, GATE – MAIN TERMINAL 1 RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)

Figure 13. Exponential Static dv/dt versus Figure 14. Typical Gate Trigger Current Variation Gate – Main Terminal 1 Resistance

6.0 1.1 5.0

V

4.0 GT3MAIN TERMINAL #2 VGT4

V

3.0 GT2 VGT1 2.0 MAIN TERMINAL #1 1.0 0 0.3 –40 –20 0 20 40 60 80 100 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 15. Typical Holding Current Variation Figure 16. Gate Trigger Voltage Variation

3–44 Motorola Thyristor Device DataIH, HOLDING CURRENT (mA) STATIC dv/dt (V/ µ s) VG T , GATE TRIGGER VOLTAGE (VOLTS) I GT, GATE TRIGGER CURRENT (mA)]
15

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