Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DCM/D Reverse Blocking Thyristors Motorola Preferred Devices

Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DCM/D Reverse Blocking Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size SCRs • Passivated Die for Reliability and Uniformity 8.0 AMPERES RMS • Low Level Triggering and Holding Characteristics A 600 thru 800 VOLTS • Available in Two Package Styles Surface Mount Lead Form — Case 369A Miniature Plastic Package — Straight Leads — Case 369 ORDERING INFORMATIONGA• To Obtain “DPAK” in Surface Mo...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DCM/D Reverse Blocking Thyristors Motorola Preferred Devices

Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size SCRs • Passivated Die for Reliability and Uniformity 8.0 AMPERES RMS • Low Level Triggering and Holding Characteristics A 600 thru 800 VOLTS • Available in Two Package Styles Surface Mount Lead Form — Case 369A Miniature Plastic Package — Straight Leads — Case 369 ORDERING INFORMATIONGA• To Obtain “DPAK” in Surface Mount Leadform (Case 369A) K Shipped in Sleeves — No Suffix, i.e. MCR8DCN K Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number, A G i.e. MCR8DCNT4 • CASE 369A–13To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves — STYLE 4 Add “–1” Suffix to Device Number, i.e. MCR8DCN–1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage (1) VDRM Volts Peak Repetitive Reverse Voltage VRRM (TJ = –40 to 125°C) MCR8DCM 600 MCR8DCN 800 On–State RMS Current IT(RMS) Amps (All Conduction Angles; TC = 105°C) 8.0 Average On–State Current (All Conduction Angles; TC = 105°C) IT(AV) 5.1 Peak Non–Repetitive Surge Current ITSM (One Half Cycle, 60 Hz, TJ = 125°C) 80 Circuit Fusing Consideration (t = 8.3 msec) I2t 26 A2sec Peak Gate Power PGM Watts (Pulse Width ≤ 10 sec, TC = 105°C) 5.0 Average Gate Power PG(AV) (t = 8.3 msec, TC = 105°C) 0.5 Peak Gate Current (Pulse Width ≤ 10 sec, TC = 105°C) IGM 2.0 Amps Operating Junction Temperature Range TJ –40 to 125 °C Storage Temperature Range Tstg –40 to 150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance — Junction to Case RJC 2.2 °C/W Thermal Resistance — Junction to Ambient RJA 88 Thermal Resistance — Junction to Ambient (2) RJA 80 Maximum Lead Temperature for Soldering Purposes (3) TL 260 °C (1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. (2) Surface mounted on minimum recommended pad size. (3) 1/8″ from case for 10 seconds. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data 1 Motorola, Inc. 1997, ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Peak Forward Blocking Current IDRM mA Peak Reverse Blocking Current IRRM (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C — — 0.01 TJ = 125°C — — 5.0 Peak On–State Voltage (1) VTM Volts (ITM = 16 A) — 1.4 1.8 Gate Trigger Current (Continuous dc) IGT mA (VD = 12 V, RL = 100 , TJ = 25°C) 2.0 7.0 15 (VD = 12 V, RL = 100 , TJ = –40°C) — — 30 Gate Trigger Voltage (Continuous dc) VGT Volts (VD = 12 V, RL = 100 , TJ = 25°C) 0.5 0.65 1.0 (VD = 12 V, RL = 100 , TJ = –40°C) — — 2.0 (VD = 12 V, RL = 100 , TJ = 125°C) 0.2 — — Holding Current IH mA (VD = 12 V, IT = 200 mA, TJ = 25°C) 4.0 22 30 (VD = 12 V, IT = 200 mA, TJ = –40°C) — — 60 Latching Current IL mA (VD = 12 V, IG = 15 mA, TJ = 25°C) 4.0 22 30 (VD = 12 V, IG = 30 mA, TJ = –40°C) — — 60 DYNAMIC CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Critical Rate of Rise of Off–State Voltage dv/dt V/s (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) 50 200 — (1) Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. 2 Motorola Thyristor Device Data, 125 10 180° 120 8.0 120° 90° = Conduction = Conduction dc 115 Angle 6.0 Angle 60° 110 4.0 dc = 30° 105 2.0 = 30° 60° 90° 120° 180° 100001.0 2.0 3.0 4.0 5.0 6.0 0 1.0 2.0 3.0 4.0 5.0 6.0 IT(AV), AVERAGE ON–STATE CURRENT (AMPS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS)

Figure 1. Average Current Derating Figure 2. On–State Power Dissipation

100 1.0 TYPICAL @ TJ = 25°C MAXIMUM @ TJ = 125°C 0.1 MAXIMUM @ TJ = 25°C ZJC(t) = RJC(t)r(t) 1.0 0.1 0.01 0 1.0 2.0 3.0 4.0 5.0 0.1 1.0 10 100 1000 10 K VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3. On–State Characteristics Figure 4. Transient Thermal Response

100 0.9 0.8 0.7 0.6 0.5 0.4 0.3 1.0 0.2 –40 –25 –10 5.0 20 35 50 65 80 95 110 125 –40 –25 –10 5.0 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Current versus Figure 6. Typical Gate Trigger Voltage versus Junction Temperature Junction Temperature Motorola Thyristor Device Data 3

IGT, GATE TRIGGER CURRENT (mA) IT, INSTANTANEOUS ON–STATE CURRENT (AMPS) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) V , GATE TRIGGER VOLTAGE (VOLTS) r(t), TRANSIENT RESISTANCEGT P(AV), AVERAGE POWER DISSIPATION (WATTS)(NORMALIZED), 100 100 10 10 1.0 1.0 –40 –25 –10 5.0 20 35 50 65 80 95 110 125 –40 –25 –10 5.0 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Holding Current versus Figure 8. Typical Latching Current versus Junction Temperature Junction Temperature

VD = 800 V TJ = 125°C 10 100 1000 10 K RGK, GATE–CATHODE RESISTANCE (OHMS)

Figure 9. Exponential Static dv/dt versus Gate–Cathode Resistance

4 Motorola Thyristor Device Data IH, HOLDING CURRENT (mA) STATIC dv/dt (V/ s) IL, LATCHING CURRENT (mA),

PACKAGE DIMENSIONS

NOTES: –T– SEATING 1. DIMENSIONING AND TOLERANCING PER ANSIPLANE Y14.5M, 1982.

B C 2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS

VREDIM MIN MAX MIN MAX

A 0.235 0.250 5.97 6.35 B 0.250 0.265 6.35 6.734C0.086 0.094 2.19 2.38

Z D 0.027 0.035 0.69 0.88 A E 0.033 0.040 0.84 1.01 S F 0.037 0.047 0.94 1.19

123G0.180 BSC 4.58 BSC

U H 0.034 0.040 0.87 1.01 K J 0.018 0.023 0.46 0.58

K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC

FJR0.175 0.215 4.45 5.46 L S 0.020 0.050 0.51 1.27H U 0.020 ––– 0.51 –––

V 0.030 0.050 0.77 1.27

D 2 PL Z 0.138 ––– 3.51 ––– G 0.13 (0.005) M T

STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE

CASE 369A–13 ISSUE Y Motorola Thyristor Device Data 5

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps 6 ◊ Motorola Thyristor DMeCviRc8eD DCaMta/D]
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