Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MCR506/D

Order this document SEMICONDUCTOR TECHNICAL DATA by MCR506/D .PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Passivated Surface for Reliability and Uniformity • Power Rated at Economical Prices SCRs • Practical Level Triggering and Holding Characteristics 6 AMPERES RMS • Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat 50 thru 600 VOLTS Dissipation and Durability. GAKAGCASE 77-08AK(TO-225AA) STYLE 2 MAXIMUM RATINGS ...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MCR506/D

.PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Passivated Surface for Reliability and Uniformity • Power Rated at Economical Prices SCRs • Practical Level Triggering and Holding Characteristics 6 AMPERES RMS • Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat 50 thru 600 VOLTS Dissipation and Durability.

G

A K

A

G CASE 77-08

A

K (TO-225AA) STYLE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage(1) VDRM Volts (TJ = 25 to 110°C, RGK = 1 kΩ) VRRM MCR506-2 50 MCR506-3 100 MCR506-4 200 MCR506-6 400 MCR506-8 600 RMS Forward Current (All Conduction Angles) IT(RMS) 6 Amp Average Forward Current (TC = 93°C) IT(AV) 3.82 Amp Peak Non-repetitive Surge Current (1/2 Cycle, 60 Hz, TJ = –40 to 110°C) ITSM 40 Amp Circuit Fusing Considerations (t = 8.3 ms) I2t 2.6 A2s Peak Gate Power PGM 0.5 Watt Average Gate Power PG(AV) 0.1 Watt Peak Forward Gate Current IGM 0.2 Amp Peak Reverse Gate Voltage VRGM 6 Volts Operating Junction Temperature Range TJ –40 to 110 °C Storage Temperature Range Tstg –40 to 150 °C Mounting Torque(2) — 6 in. lb. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of torque washer (Shakeproof WD19523 or equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heat sink contact pad are common. (See AN290 B) For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +225°C. For optimum results, an activated flux (oxide removing) is recommended. Motorola Thyristor Device Data 1 Motorola, Inc. 1995,

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 3 °C/W Thermal Resistance, Junction to Ambient RθJA 75 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1000 Ohms unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit Peak Forward Blocking Current IDRM — — 200 µA (VD = Rated VDRM, TJ = 110°C) Peak Reverse Blocking Current IRRM — — 200 µA (VR = Rated VRRM, TJ = 110°C) Forward “On” Voltage VTM — — 1.9 Volts (ITM = 12 A Peak) Gate Trigger Current (Continuous dc) IGT µA (VAK = 7 Vdc, RL = 100 Ohms) — — 200 (VAK = 7 Vdc, RL = 100 Ohms, TC = –40°C) — — 500 Gate Trigger Voltage (Continuous dc) VGT — — 1 Volts (VAK = 7 Vdc, RL = 100 Ohms, TC = 25°C) Gate Non-Trigger Voltage VGD 0.2 — — Volts (VAK = Rated VDRM, RL = 100 Ohms, TJ = 110°C) Holding Current IH — — 5 mA (VAK = 7 Vdc, TC = 25°C) Forward Voltage Application Rate dv/dt — 10 — V/µs (VD = Rated VDRM, Exponential Waveform, TJ = 110°C)

FIGURE 1 — CURRENT DERATING FIGURE 2 — POWER DISSIPATION

110 10.0 8.0 6.0 85 4.0 2.0 70001.0 2.0 3.0 4.0 5.0 6.0 7.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), RMS ON-STATE CURRENT (AMPS) 2 Motorola Thyristor Device Data TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) P( A V ) , AVERAGE POWER DISSIPATION (WATTS),

PACKAGE DIMENSIONS

–B–

U F C

NOTES:

Q 1. DIMENSIONING AND TOLERANCING PER ANSIM Y14.5M, 1982.

–A– 2. CONTROLLING DIMENSION: INCH. 123STYLE 2: INCHES MILLIMETERS PIN 1. CATHODE DIM MIN MAX MIN MAX 2. ANODE A 0.425 0.435 10.80 11.04 3. GATE B 0.295 0.305 7.50 7.74

H K C 0.095 0.105 2.42 2.66D 0.020 0.026 0.51 0.66

F 0.115 0.130 2.93 3.30 G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41

VJJ0.015 0.025 0.39 0.63K 0.575 0.655 14.61 16.63 GRM5TYP 5 TYP

Q 0.148 0.158 3.76 4.01

S 0.25 (0.010) MAMBMR0.045 0.055 1.15 1.39

S 0.025 0.035 0.64 0.88

D 2 PL U 0.145 0.155 3.69 3.93

0.25 (0.010) MAMBMV0.040 ––– 1.02 –––

CASE 77–08

(TO–225AA)

Motorola Thyristor Device Data 3

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 Motorola Thyristor Device Data ◊ MCR506/D]
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