Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MCR310/D Reverse Blocking Triode Thyristors

Order this document SEMICONDUCTOR TECHNICAL DATA by MCR310/D Reverse Blocking Triode Thyristors .designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gate Geometry for Uniform Current Density • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability SCRs • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat 10 AMPERES RMS Dissipation and Durability 50 thru 800 VOLTS • Low Trigger Currents, 200 µA M...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MCR310/D Reverse Blocking Triode Thyristors

.designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gate Geometry for Uniform Current Density • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability SCRs • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat 10 AMPERES RMS Dissipation and Durability 50 thru 800 VOLTS • Low Trigger Currents, 200 µA Maximum for Direct Driving from Integrated Circuits

G

A C MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking VDRM Volts Voltage(1) or (TJ = –40 to 110°C) VRRM (1/2 Sine Wave, RGK = 1 kΩ) MCR310-2 50 MCR310-3 100 MCR310-4 200 K MCR310-6 400 A CASE 221A-04 MCR310-8 600 G (TO-220AB) MCR310-10 800 STYLE 3 On-State RMS Current (TC = 75°C) IT(RMS) 10 Amps Peak Non-repetitive Surge Current ITSM 100 Amps (1/2 Cycle, 60 Hz, TJ = –40 to 110°C) Circuit Fusing (t = 8.3 ms) I2t 40 A2s Peak Gate Voltage (t 10 µs) VGM ±5 Volts Peak Gate Current (t 10 µs) IGM 1 Amp Peak Gate Power (t 10 µs) PGM 5 Watts Average Gate Power PG(AV) 0.75 Watt Operating Junction Temperature Range TJ –40 to +110 °C Storage Temperature Range Tstg –40 to +150 °C Mounting Torque – 8 in.-lb. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2.2 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data 1 Motorola, Inc. 1995,

ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1 kΩ unless otherwise noted)

Characteristic Symbol Min Typ Max Unit Peak Forward Blocking Current(1) TC = 110°C IDRM — — 500 µA (TJ = 110°C, VD = Rated VDRM) TC = 25°C — — 10 µA Peak Reverse Blocking Current(1) TC = 110°C IRRM — — 500 µA (TJ = 110°C, VR = Rated VRRM) TC = 25°C — — 10 µA On-State Voltage VTM — 1.7 2.2 Volts (ITM = 20 A Peak, Pulse Width 1 ms, Duty Cycle 2%) Gate Trigger Current, Continuous dc(2) IGT — 30 200 µA (VD = 12 V, RL = 100 Ω) Gate Trigger Voltage, Continuous dc VGT Volts (VD = 12 V, RL = 100 Ω) — 0.5 1.5 (VD = Rated VDRM, RL = 10 kΩ, TJ = 110°C) 0.1 — — Holding Current IH — — 6 mA (VD = 12 V, ITM = 100 mA) Critical Rate of Rise of Forward Blocking Voltage dv/dt — 10 — V/µs (VD = Rated VDRM, TJ = 110°C, Exponential Waveform) Gate Controlled Turn-On Time tgt — 1 — µs (VD = Rated VDRM, ITM = 20 A, IG = 2 mA) 1. Ratings apply for negative gate voltage or RGK = 1 kΩ. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 2. Does not include RGK current. 120 20 dc 110 16ααα= CONDUCTION ANGLE α = CONDUCTION ANGLE 100 12 α = 30° α = 30° 60°90 8 60° 80 4 dc 70002468100246810 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 1. Average Current Derating Figure 2. On-State Power Dissipation

0.72VV= 12 Vdc D = 12 Vdc D 0.6 0.5 0.4 0.5 0.2 0.1 –40 –20 0 20 40 60 80 90 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Normalized Gate Current Figure 4. Gate Voltage

2 Motorola Thyristor Device Data NORMALIZED GATE CURRENT TC , MAXIMUM CASE TEMPERATURE ( ° C) VG T , GATE TRIGGER VOLTAGE (VOLTS) PA V , AVERAGE POWER DISSIPATION (WATTS),

PACKAGE DIMENSIONS

–T– SEATINGPLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

BFC2. CONTROLLING DIMENSION: INCH. T S 3. DIMENSION Z DEFINES A ZONE WHERE ALLBODY AND LEAD IRREGULARITIES ARE

ALLOWED. 4 INCHES MILLIMETERS

Q A STYLE 3: DIM MIN MAX MIN MAX

PIN 1. CATHODE A 0.570 0.620 14.48 15.75123U2. ANODE B 0.380 0.405 9.66 10.28 3. GATE C 0.160 0.190 4.07 4.82

H 4. ANODE D 0.025 0.035 0.64 0.88

F 0.142 0.147 3.61 3.73

K G 0.095 0.105 2.42 2.66 Z H 0.110 0.155 2.80 3.93

J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27

LRL0.045 0.055 1.15 1.39

N 0.190 0.210 4.83 5.33

VJQ0.100 0.120 2.54 3.04

R 0.080 0.110 2.04 2.79

G S 0.045 0.055 1.15 1.39 D T 0.235 0.255 5.97 6.47

U 0.000 0.050 0.00 1.27

N V 0.045 ––– 1.15 –––

Z ––– 0.080 ––– 2.04

CASE 221A-04

(TO–220AB)

Motorola Thyristor Device Data 3

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 Motorola Thyristor Device Data ◊ MCR310/D]
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