Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MCR265-2/D Silicon Controlled Rectifiers

Order this document SEMICONDUCTOR TECHNICAL DATA by MCR265-2/D Silicon Controlled Rectifiers .designed for inverse parallel SCR output devices for solid state relays, welders, battery chargers, motor controls or applications requiring high surge operation. • Photo Glass Passivated Blocking Junctions for High Temperature Stability, Center Gate for Uniform Parameters SCRs • 550 Amperes Surge Capability 55 AMPERES RMS • Blocking Voltage to 800 Volts 50 thru 800 VOLTSGAKCASE 221A-04 (TO-220AB) STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Peak Repetitive Forw...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MCR265-2/D Silicon Controlled Rectifiers

.designed for inverse parallel SCR output devices for solid state relays, welders, battery chargers, motor controls or applications requiring high surge operation. • Photo Glass Passivated Blocking Junctions for High Temperature Stability, Center Gate for Uniform Parameters SCRs • 550 Amperes Surge Capability 55 AMPERES RMS • Blocking Voltage to 800 Volts 50 thru 800 VOLTS

G

A K CASE 221A-04 (TO-220AB) STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage(1) VDRM Volts (TJ = 25 to 125°C, Gate Open) VRRM MCR265-2 50 MCR265-4 200 MCR265-6 400 MCR265-8 600 MCR265-10 800 Forward Current (TC = 70°C) IT(RMS) 55 Amps (All Conduction Angles) IT(AV) 35 Peak Non-repetitive Surge Current — 8.3 ms ITSM 550 Amps (1/2 Cycle, Sine Wave) Forward Peak Gate Power PGM 20 Watts Forward Average Gate Power PG(AV) 0.5 Watt Forward Peak Gate Current IGM 2 Amps (300 µs, 120 PPS) Operating Junction Temperature Range TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is to be used at high sustained currents. Motorola Thyristor Device Data 1 Motorola, Inc. 1995,

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.9 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit Peak Forward or Reverse Blocking Current IDRM, IRRM (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C — — 10 µA TJ = 125°C — — 2 mA Forward “On” Voltage(1) VTM — 1.5 1.9 Volts (ITM = 110 A) Gate Trigger Current (Continuous dc) IGT mA (Anode Voltage = 12 Vdc, RL = 100 Ohms) — 20 50 (TC = –40°C) — 40 90 Gate Trigger Voltage (Continuous dc) VGT — 1 1.5 Volts (Anode Voltage = 12 Vdc, RL = 100 Ohms) Gate Non-Trigger Voltage VGD 0.2 — — Volts (Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C) Holding Current IH — 30 75 mA (Anode Voltage = 12 Vdc, Gate Open) Turn-On Time tgt — 1.5 — µs (ITM = 55 A, IGT = 200 mAdc) Critical Rate-of-Rise of Off-State Voltage dv/dt — 50 — V/µs (Gate Open, VD = Rated VDRM, Exponential Waveform) 1. Pulse Width 300 µs, Duty Cycle 2%.

FIGURE 1 — AVERAGE CURRENT DERATING FIGURE 2 — MAXIMUM ON-STATE POWER DISSIPATION

125 60 121 180°54 117 90° 113 α 48 60° 109 α = CONDUCTION ANGLE 42 36 dc 101 α = 30° 97 30 93 24 α = 30° 89 dc 85 18 81 12 α 77 60° 90° α = CONDUCTION ANGLE 73 180° 6.0 69004.0 8.0 12 16 20 24 28 32 36 40 0 5.0 10 15 20 25 30 35 40 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)* 2 Motorola Thyristor Device Data TC , MAXIMUM CASE TEMPERATURE ( ° C) P( A V ) , AVERAGE POWER (WATTS),

FIGURE 3 — GATE TRIGGER CURRENT FIGURE 4 — GATE TRIGGER VOLTAGE

2.5 3.0 2.0 VD = 12 Vdc 2.0 1.5 VD = 12 Vdc 1.5 0.7 0.8 0.5 0.4 0.5 0.3 0.25 0.3 –60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 5 — HOLDING CURRENT FIGURE 6 — TYPICAL ON-STATE CHARACTERISTICS

3.0 1000 2.0 VD = 12 Vdc 1.0 TJ = 25°C 0.7 0.5 0.3 1.0 – 60 – 40 – 20 0 20 40 60 80 100 120 140 0 1.0 2.0 3.0 TJ, JUNCTION TEMPERATURE (°C) VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

FIGURE 7 — THERMAL RESPONSE

1.0 0.7 0.5 0.3 0.2 ZθJC(t) = RθJC • r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1k 2k 3k 5k 10k t, TIME (ms)

Motorola Thyristor Device Data 3

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) NORMALIZED HOLDING CURRENT NORMALIZED GATE CURRENTITM, INSTANTANEOUS ON-STATE CURRENT (AMPS) NORMALIZED GATE VOLTAGE,

PACKAGE DIMENSIONS

–T– SEATING NOTES:PLANE 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

BFC2. CONTROLLING DIMENSION: INCH. T 3. DIMENSION Z DEFINES A ZONE WHERE ALLS BODY AND LEAD IRREGULARITIES ARE

ALLOWED. INCHES MILLIMETERS 4 DIM MIN MAX MIN MAX

Q A STYLE 3: A 0.570 0.620 14.48 15.75

PIN 1. CATHODE B 0.380 0.405 9.66 10.28123U2. ANODE C 0.160 0.190 4.07 4.82 3. GATE

H D 0.025 0.035 0.64 0.884. ANODE F 0.142 0.147 3.61 3.73 K G 0.095 0.105 2.42 2.66 Z H 0.110 0.155 2.80 3.93

J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 L 0.045 0.055 1.15 1.39

LRN0.190 0.210 4.83 5.33 V Q 0.100 0.120 2.54 3.04J R 0.080 0.110 2.04 2.79 G S 0.045 0.055 1.15 1.39

T 0.235 0.255 5.97 6.47

D U 0.000 0.050 0.00 1.27 N V 0.045 ––– 1.15 –––

Z ––– 0.080 ––– 2.04

CASE 221A-04

(TO–220AB) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 Motorola Thyristor Device Data ◊ MCR265/D]
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