Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MCR22-2/D

Order this document SEMICONDUCTOR TECHNICAL DATA by MCR22-2/D .designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low-power switching applications. • 150 Amperes for 2 µs Safe Area • High dv/dt • Very Low Forward “On” Voltage at High Current SCRs • Low-Cost TO-226AA (TO-92) 1.5 AMPERES RMS 50 thru 600 VOLTSGAKKGCASE 29-04 A (TO-226AA) STYLE 10 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage VDRM, Volts (RGK = IK, TJ = 25 to 125°C) VRRM MCR...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MCR22-2/D

.designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low-power switching applications. • 150 Amperes for 2 µs Safe Area • High dv/dt • Very Low Forward “On” Voltage at High Current SCRs • Low-Cost TO-226AA (TO-92) 1.5 AMPERES RMS 50 thru 600 VOLTS

G

A K

K

G CASE 29-04 A (TO-226AA) STYLE 10 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage VDRM, Volts (RGK = IK, TJ = 25 to 125°C) VRRM MCR22-2 50 MCR22-3 100 MCR22-4 200 MCR22-6 400 MCR22-8 600 On-State Current RMS IT(RMS) 1.5 Amps (All Conduction Angles) Peak Non-repetitive Surge Current, TA = 25°C ITSM 15 Amps (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) I2t 0.9 A2s Peak Gate Power, TA = 25°C PGM 0.5 Watt Average Gate Power, TA = 25°C PG(AV) 0.1 Watt Peak Forward Gate Current, TA = 25°C IFGM 0.2 Amp (300 µs, 120 PPS) Peak Reverse Gate Voltage VRGM 5 Volts Operating Junction Temperature Range @ Rated VRRM and VDRM TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C Lead Solder Temperature — +230 °C (Lead Length 1/16 from case, 10 s Max) 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data 1 Motorola, Inc. 1995,

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 50 °C/W Thermal Resistance, Junction to Ambient RθJA 160 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted. RGK = 1000 Ohms.)

Characteristic Symbol Min Typ Max Unit Peak Forward or Reverse Blocking Current IDRM, IRRM (VAK = Rated VDRM or VRRM) TC = 25°C — — 10 µA TC = 125°C — — 200 µA Forward “On” Voltage VTM — 1.2 1.7 Volts (ITM = 1 A Peak) Gate Trigger Current (Continuous dc)(1) TC = 25°C IGT — 30 200 µA (Anode Voltage = 6 Vdc, RL = 100 Ohms) TC = –40°C — — 500 Gate Trigger Voltage (Continuous dc) TC = 25°C VGT — — 0.8 Volts (Anode Voltage = 7 Vdc, RL = 100 Ohms) TC = –40°C — — 1.2 (Anode Voltage = Rated VDRM, RL = 100 Ohms) TC = 125°C VGD 0.1 — — Holding Current TC = 25°C IH — 2 5 mA (Anode Voltage = 12 Vdc) TC = –40°C — — 10 Forward Voltage Application Rate dv/dt — 25 — V/µs (TC = 125°C) 1. RGK Current Not Included in Measurement.

CURRENT DERATING FIGURE 1 — MAXIMUM CASE TEMPERATURE FIGURE 2 — MAXIMUM AMBIENT TEMPERATURE

140 140 100 100 α = 180° dc 60 α = CONDUCTION 60 ANGLE 40 dc 20 20 α = 180° α = CONDUCTION ANGLE0000.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.2 0.4 0.6 0.8 1.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMP) 2 Motorola Thyristor Device Data TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( ° C),

FIGURE 3 — TYPICAL FORWARD VOLTAGE

5.0 3.0 2.0 TJ = 125°C 25°C 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0 0.5 1.0 1.5 2.0 2.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

FIGURE 4 — THERMAL RESPONSE

1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 5000 10000 t, TIME (ms)

Motorola Thyristor Device Data 3

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) I T , INSTANTANEOUS ON-STATE CURRENT (AMP),

TYPICAL CHARACTERISTICS FIGURE 5 — GATE TRIGGER VOLTAGE FIGURE 6 — TYPICAL GATE TRIGGER CURRENT

0.8 100 VAK = 7.0 V 0.7 RL = 100 0.6 0.5 5.0 0.4 3.0 2.0 0.3 1.0 –75 –50 –25 0 25 50 75 100 125 –40 –20 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) TJ JUNCTION TEMPERATURE (°C)

FIGURE 7 — HOLDING CURRENT FIGURE 8 — POWER DISSIPATION

10 2.0 1.8 120° 180°90° 1.6 60° VAK = 12 V 30° 1.4 RL = 100 Ω 5.0 1.2 1.0 dc 0.8 2.0 0.6 0.4 0.2 1.0 0 –40 –20 0 20 40 60 80 100 120 140 160 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 TJ, JUNCTION TEMPERATURE (°C) IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 4 Motorola Thyristor Device DataIH, HOLDING CURRENT (mA) VG , GATE TRIGGER VOLTAGE (VOLTS) P( A V ) MAXIMUM AVERAGE POWER DISSIPATION (WATTS) IGTGATE TRIGGER CURRENT (µA),

PACKAGE DIMENSIONS

NOTES:

A B 1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. STYLE 10: 3. CONTOUR OF PACKAGE BEYOND DIMENSION R

R PIN 1. CATHODE IS UNCONTROLLED.

2. GATE 4. DIMENSION F APPLIES BETWEEN P AND L.

P 3. ANODE DIMENSION D AND J APPLY BETWEEN L AND K L MINIMUM. LEAD DIMENSION IS UNCONTROLLED F IN P AND BEYOND DIMENSION K MINIMUM.SEATING

PLANE K INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19

XXDD0.016 0.022 0.41 0.55 G F 0.016 0.019 0.41 0.48 J G 0.045 0.055 1.15 1.39H H 0.095 0.105 2.42 2.66 V J 0.015 0.020 0.39 0.50C K 0.500 ––– 12.70 ––– SECTION X–X L 0.250 ––– 6.35 –––

1NN0.080 0.105 2.04 2.66P ––– 0.100 ––– 2.54

N R 0.115 ––– 2.93 –––V 0.135 ––– 3.43 ––– CASE 29-04

(TO–226AA)

Motorola Thyristor Device Data 5

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 Motorola Thyristor Device Data ◊ MCR22–2/D]
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