Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MCR218FP/D Reverse Blocking Thyristors

Order this document SEMICONDUCTOR TECHNICAL DATA by MCR218FP/D Reverse Blocking Thyristors .designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. ISOLATED SCRs • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity 8 AMPERES RMS and Stability 50 thru 800 VOLTS • Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 Volts • 80 A Surge Current Capability • Insulated Package Simplifies MountingGAKCASE 221C-02 STYLE ...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MCR218FP/D Reverse Blocking Thyristors

.designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. ISOLATED SCRs • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity 8 AMPERES RMS and Stability 50 thru 800 VOLTS • Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 Volts • 80 A Surge Current Capability • Insulated Package Simplifies Mounting

G

A K CASE 221C-02 STYLE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage(1) VDRM Volts (TJ = –40 to +125°C, Gate Open) VRRM MCR218-2FP 50 MCR218-4FP 200 MCR218-6FP 400 MCR218-8FP 600 MCR218-10FP 800 On-State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2) IT(RMS) 8 Amps Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C) ITSM 80 Amps Preceded and followed by rated current Circuit Fusing (t = 8.3 ms) I2t 26 A2s Peak Gate Power (TC = +70°C, Pulse Width = 10 µs) PGM 5 Watts Average Gate Power (TC = +70°C, t = 8.3 ms) PG(AV) 0.5 Watt Peak Gate Current (TC = +70°C, Pulse Width = 10 µs) IGM 2 Amps RMS Isolation Voltage (TA = 25°C, Relative Humidity 20%) V(ISO) 1500 Volts Operating Junction Temperature TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +125 °C 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data 1 Motorola, Inc. 1995,

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2 °C/W Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit Peak Forward Blocking Current IDRM (VD = Rated VDRM, Gate Open) TJ = 25°C — — 10 µA TJ = 125°C — — 2 mA Peak Reverse Blocking Current IRRM — — 2 mA (VR = Rated VRRM, TJ = 125°C) Forward “On” Voltage(1) VTM — 1 1.8 Volts (ITM = 16 A Peak) Gate Trigger Current (Continuous dc) IGT — 10 25 mA (Anode Voltage = 12 Vdc, RL = 100 Ohms) Gate Trigger Voltage (Continuous dc) VGT — — 1.5 Volts (Anode Voltage = 12 Vdc, RL = 100 Ohms) Gate Non-Trigger Voltage VGD 0.2 — — Volts (Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C) Holding Current IH — 16 30 mA (Anode Voltage = 12 Vdc) Turn-On Time tgt — 1.5 — µs (ITM = 8 A, IGT = 40 mAdc) Turn-Off Time (VD = Rated VDRM, tq µs ITM = 8 A, IR = 8 A) TJ = 25°C — 15 — TJ = 125°C — 35 — Critical Rate-of-Rise of Off-State Voltage dv/dt — 100 — V/µs (Gate Open, VD = Rated VDRM, Exponential Waveform) 1. Pulse Test: Pulse Width = 1 ms, Duty Cycle 2%.

TYPICAL CHARACTERISTICS

125 15 115 12ααα= CONDUCTION ANGLE α = CONDUCTION ANGLE dc 105 9 120° 180° 60° 90° 956α= 30° dc 853α= 30° 60° 90° 120° 180° 750012345678012345678IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) IT(AV), AVG. ON-STATE CURRENT (AMPS)

Figure 1. Current Derating Figure 2. On-State Power Dissipation

2 Motorola Thyristor Device Data TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) P( A V ) , AVERAGE ON-STATE POWER DISSIPATION (WATTS), 100 80 1 CYCLE TJ = 25°C 75 125°C 30 70 20 65 TC = 85°C f = 60 Hz 10 60 SURGE IS PRECEDED AND 7 FOLLOWED BY RATED CURRENT512346810 NUMBER OF CYCLES 3 Figure 4. Maximum Non-Repetitive Surge Current +I 0.7 0.5 IT FORWARDREVERSE BREAKOVER BLOCKING V POINT 0.3 REGION

T IH IDRM

–V +V 0.2IVRRM

VDRM RRM FORWARD

REVERSE BLOCKING 0.1 AVALANCHE –I REGION 0.4 1.2 2 2.8 3.6 4.4 5.2 6 REGION v F, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 3. Maximum On-State Characteristics Figure 5. Characteristics and Symbols

0.7 0.5 0.3 0.2 ZθJC(t) = RθJC • r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5123510 20 30 50 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k t, TIME (ms)

Figure 6. Thermal Response Motorola Thyristor Device Data 3 Figure

r(t), TRANSIENT THERMAL RESISTANCE i , INSTANTANEOUS ON-STATE FORWARD CURRENT (AMP) (NORMALIZED) FITSM, PEAK SURGE CURRENT (AMP), 2 2 VD = 12 V VD = 12 V 1.6 1.6 1.2 1.2 0.8 0.8 0.4 0.400–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Gate Trigger Current versus Temperature Figure 8. Gate Trigger Voltage versus Temperature

VD = 12 V 1.6 1.2 0.8 0.4 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C)

Figure 9. Holding Current versus Temperature

4 Motorola Thyristor Device DataIGT, GATE TRIGGER CURRENT (NORMALIZED) I H , HOLDING CURRENT (NORMALIZED) VG T , GATE TRIGGER VOLTAGE (NORMALIZED),

PACKAGE DIMENSIONS

NOTES: –T– SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI –B– PLANE Y14.5M, 1982.F C 2. CONTROLLING DIMENSION: INCH.

P S 3. LEAD DIMENSIONS UNCONTROLLED WITHIN N DIMENSION Z.

INCHES MILLIMETERS

E DIM MIN MAX MIN MAXA 0.680 0.700 17.28 17.78 A B 0.388 0.408 9.86 10.36 Q C 0.175 0.195 4.45 4.95H STYLE 2: D 0.025 0.040 0.64 1.01

123PIN 1. CATHODE E 0.340 0.355 8.64 9.01 2. ANODE F 0.140 0.150 3.56 3.81 –Y– 3. GATE G 0.100 BSC 2.54 BSC H 0.110 0.155 2.80 3.93

K J 0.018 0.028 0.46 0.71 Z K 0.500 0.550 12.70 13.97

L 0.045 0.070 1.15 1.77 N 0.049 ––– 1.25 –––

LJP0.270 0.290 6.86 7.36

Q 0.480 0.500 12.20 12.70

GRR0.090 0.120 2.29 3.04 D 3 PL S 0.105 0.115 2.67 2.92

Z 0.070 0.090 1.78 2.28 0.25 (0.010) MBMY

CASE 221C-02 Motorola Thyristor Device Data 5

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 Motorola Thyristor Device Data ◊ MCR218FP/D]
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