Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MCR16/D *Motorola preferred devices

Order this document SEMICONDUCTOR TECHNICAL DATA by MCR16/D *Motorola preferred devices Designed primarily for half–wave ac control applications, such as motor SCRs controls, heating controls, and power supplies; or wherever half–wave, silicon 16 AMPERES RMS gate–controlled devices are needed. 400 thru 800 • Blocking Voltage to 800 Volts VOLTS • On-State Current Rating of 16 Amperes RMS • High Surge Current Capability — 160 Amperes • Industry Standard TO–220AB Package for Ease of Design A • Glass Passivated Junctions for Reliability and UniformityKAGCASE 221A–06 (TO-220AB) Style 3 MAXIMUM RATI...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MCR16/D

*Motorola preferred devices Designed primarily for half–wave ac control applications, such as motor SCRs controls, heating controls, and power supplies; or wherever half–wave, silicon 16 AMPERES RMS gate–controlled devices are needed. 400 thru 800 • Blocking Voltage to 800 Volts VOLTS • On-State Current Rating of 16 Amperes RMS • High Surge Current Capability — 160 Amperes • Industry Standard TO–220AB Package for Ease of Design A • Glass Passivated Junctions for Reliability and Uniformity

K A G

CASE 221A–06 (TO-220AB) Style 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Off-State Voltage (1) VDRM Volts Peak Repetitive Reverse Voltage VRRM (TJ = –40 to 125°C) MCR16D 400 MCR16M 600 MCR16N 800 On-State RMS Current IT(RMS) 16 A (All Conduction Angles) Peak Non-repetitive Surge Current ITSM 160 A (One Half Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) I2t 106 A2sec Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PGM 5.0 Watts Average Gate Power (t = 8.3 ms, TC = 80°C) PG(AV) 0.5 Watts Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) IGM 2.0 A Operating Junction Temperature Range TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case RθJC 1.5 °C/W Thermal Resistance — Junction to Ambient RθJA 62.5 Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data 1 Motorola, Inc. 1995,

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Forward Blocking Current TJ = 25°C IDRM — — 0.01 mA Peak Reverse Blocking Current TJ = 125°C IRRM — — 2.0 (VAK = Rated VDRM or VRRM, Gate Open)

ON CHARACTERISTICS

Peak On-State Voltage* (ITM = 32 A) VTM — — 1.7 Volts Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT 2.0 8.0 20 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT 0.5 0.65 1.0 Volts Hold Current (Anode Voltage =12 V) IH 4.0 25 40 mA

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off–State Voltage dv/dt 50 200 — V/µs (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 25°C) *Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. 120 20 dc 115 180° = Conduction 16 120° Angle 14 = Conduction110 90°Angle 12 60° 105 10 =30° 100 6 =30° 60° 90° 120° 180° dc 4 9000246810 12 14 160246810 12 14 16 IT(AV), AVERAGE ON–STATE CURRENT (AMP) IT(AV), AVERAGE ON–STATE CURRENT (AMP)

Figure 1. Average Current Derating Figure 2. Maximum On–State Power Dissipation

100 1 Typical @ TJ=25 °C Maximum @ TJ=125 °CZRr(t) JC(t) JC(t) 0.1 Maximum @ TJ=25 °C 0.1 0.01 0.5 1 1.5 2 2.5 3 3.5 0.1 1 10 100 1000 1104 VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3. On–State Characteristics Figure 4. Transient Thermal Response

2 Motorola Thyristor Device DataIT, INSTANTANEOUS ON-STATE CURRENT (AMPS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) R ( t ) TRANSIENT THERMAL R (NORMALIZED) MAXIMUM AVERAGE POWER P(AV) DISSIPATION (WATTS), 100 100 10 10 –40 –25 –10 5 20 35 50 65 80 95 110 125 –40 –25 –10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Holding Current Versus Figure 6. Typical Latching Current Versus Junction Temperature Junction Temperature

100 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 1 0.40 –40 –25 –10 5 20 35 50 65 80 95 110 125 –40 –25 –10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Gate Trigger Current Versus Figure 8. Typical Gate Trigger Voltage Versus Junction Temperature Junction Temperature

1400 160 1 Cycle TJ 125°C VPK800 V 140 1000 130 600 TJ 125°C f 60Hz 400 90 10 100 1000 1 10412345678910 RGK, GATE CATHODE RESISTANCE (OHMS) NUMBER OF CYCLES

Figure 9. Typical Exponential Static dv/dt Versus Figure 10. Maximum Non–Repetitive Gate Cathode Resistance. Surge Current Motorola Thyristor Device Data 3

STATIC dv/dt (V/uS) IGT, GATE TRIGGER CURRENT (mA) I H , HOLDING CURRENT (mA) ITSM, PEAK SURGE CURRENT (AMP) VGT , GATE TRIGGER VOLTAGE (VOLTS) IL, LATCHING CURRENT (mA),

PACKAGE DIMENSIONS

NOTES: –T– SEATINGPLANE 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

BFC2. CONTROLLING DIMENSION: INCH. T 3. DIMENSION Z DEFINES A ZONE WHERE ALLS BODY AND LEAD IRREGULARITIES ARE

ALLOWED. INCHES MILLIMETERS

Q A DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75123UB0.380 0.405 9.66 10.28C 0.160 0.190 4.07 4.82

H D 0.025 0.035 0.64 0.88

F 0.142 0.147 3.61 3.73

K STYLE 3: G 0.095 0.105 2.42 2.66 Z PIN 1. CATHODE H 0.110 0.155 2.80 3.93

2. ANODE J 0.018 0.025 0.46 0.64 3. GATE K 0.500 0.562 12.70 14.27 4. ANODE

LRL0.045 0.060 1.15 1.52

N 0.190 0.210 4.83 5.33

VJQ0.100 0.120 2.54 3.04

R 0.080 0.110 2.04 2.79

G S 0.045 0.055 1.15 1.39 D T 0.235 0.255 5.97 6.47U 0.000 0.050 0.00 1.27 N CASE 221A–06 V 0.045 ––– 1.15 –––

(TO-220AB) Z ––– 0.080 ––– 2.04 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 Motorola Thyristor Device Data ◊ MCR16/D]
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