Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MCR218/D Silicon-Controlled Rectifiers

Order this document SEMICONDUCTOR TECHNICAL DATA by MCR218/D Silicon-Controlled Rectifiers .designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. SCRs 8 AMPERES RMS • Glass-Passivated Junctions 50 thru 800 VOLTS • Blocking Voltage to 800 Volts • TO-220 Construction — Low Thermal Resistance, High Heat Dissipation and DurabilityGAKCASE 221A-04 (TO-220AB) STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Peak Repetitive ...
Author: Gould Shared: 8/19/19
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Order this document SEMICONDUCTOR TECHNICAL DATA by MCR218/D Silicon-Controlled Rectifiers

.designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. SCRs 8 AMPERES RMS • Glass-Passivated Junctions 50 thru 800 VOLTS • Blocking Voltage to 800 Volts • TO-220 Construction — Low Thermal Resistance, High Heat Dissipation and Durability

G

A K CASE 221A-04 (TO-220AB) STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Peak Repetitive Forward and Reverse Voltage(1) VDRM Volts (TJ = 25 to 125°C, Gate Open) MCR218-2 VRRM 50 MCR218-3 100 MCR218-4 200 MCR218-6 400 MCR218-8 600 MCR218-10 800 Forward Current RMS IT(RMS) 8 Amps (All Conduction Angles) Peak Forward Surge Current ITSM 80 Amps (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations I2t 26 A2s (t = 8.3 ms) Forward Peak Gate Power PGM 5 Watts Forward Average Gate Power PG(AV) 0.5 Watt Forward Peak Gate Current IGM 2 Amps Operating Junction Temperature Range TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data 1 Motorola, Inc. 1995,

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2 °C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit Peak Forward or Reverse Blocking Current IDRM, IRRM (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C — — 10 µA TJ = 125°C — — 2 mA Peak On-State Voltage(1) VTM — 1.5 1.8 Volts (ITM = 16 A Peak) Gate Trigger Current (Continuous dc) IGT — 10 25 mA (VD = 12 V, RL = 100 Ohms) Gate Trigger Voltage (Continuous dc) VGT Volts (VD = 12 V, RL = 100 Ohms) — — 1.5 (Rated VDRM, RL = 1000 Ohms, TJ = 125°C) 0.2 — — Holding Current IH — 16 30 mA (Anode Voltage = 24 Vdc, Peak Initiating On-State Current = 0.5 A, 0.1 to 10 ms Pulse, Gate Trigger Source = 7 V, 20 Ohms) Critical Rate-of-Rise of Off-State Voltage dv/dt — 100 — V/µs (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) 1. Pulse Test: Pulse Width = 1 ms, Duty Cycle 2%.

FIGURE 1 — CURRENT DERATING

α α = CONDUCTION ANGLE dc α = 30° 60° 90° 120° 180° 012345678IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)

FIGURE 2 — ON-STATE POWER DISSIPATION FIGURE 3 — NORMALIZED GATE TRIGGER CURRENT

15 3.0 2.0 12 α VD = 12 Vdc 1.5 α = Conduction Angle dc 9.0 120° 180° 1.0 0.9 60° 90° 6.0 α = 30° 0.7 3.0 0.5 0.4 0 0.3 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 –60 –40 –20 0 20 40 60 80 100 120 140 IT(AV), AVG. ON-STATE CURRENT (AMPS) TJ, JUNCTION TEMPERATURE (°C) 2 Motorola Thyristor Device Data P( A V ) , AVERAGE ON-STATE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) IGT, NORMALIZED GATE TRIGGER CURRENT (mA),

FIGURE 4 — NORMALIZED GATE TRIGGER VOLTAGE FIGURE 5 — NORMALIZED HOLDING CURRENT

1.3 4.0 3.0 1.2 2.0 1.5 0.9 0.7 0.9 0.5 0.7 0.4 0.5 0.3 0.4 –60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Motorola Thyristor Device Data 3

VG T , NORMALIZED GATE TRIGGER VOLTAGEIH, NORMALIZED HOLDING CURRENT (mA),

PACKAGE DIMENSIONS

–T– SEATING NOTES:PLANE 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

BFC2. CONTROLLING DIMENSION: INCH. T 3. DIMENSION Z DEFINES A ZONE WHERE ALLS BODY AND LEAD IRREGULARITIES ARE

ALLOWED. INCHES MILLIMETERS 4 DIM MIN MAX MIN MAX

Q A

STYLE 3: A 0.570 0.620 14.48 15.75 PIN 1. CATHODE B 0.380 0.405 9.66 10.28123U2. ANODE C 0.160 0.190 4.07 4.82

H 3. GATE D 0.025 0.035 0.64 0.88

4. ANODE F 0.142 0.147 3.61 3.73

K G 0.095 0.105 2.42 2.66 Z H 0.110 0.155 2.80 3.93

J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 L 0.045 0.055 1.15 1.39

LRN0.190 0.210 4.83 5.33 V Q 0.100 0.120 2.54 3.04J R 0.080 0.110 2.04 2.79 G S 0.045 0.055 1.15 1.39T 0.235 0.255 5.97 6.47 D U 0.000 0.050 0.00 1.27 N V 0.045 ––– 1.15 –––

Z ––– 0.080 ––– 2.04

CASE 221A-04

(TO–220AB) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 Motorola Thyristor Device Data ◊ MCR218/D]
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