Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MCR08BT1/D Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors *Motorola preferred devices

Order this document SEMICONDUCTOR TECHNICAL DATA by MCR08BT1/D Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors *Motorola preferred devices PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and SCR detection circuits. Supplied in surface mount package for use in automated 0.8 AMPERE RMS manufacturing. 200 thru 600 Volts • Sensitive Gate Trigger Current • Blocking Voltage to 600 Volts • Glass Passivated Surface for Reliability and Uniformity • Surface Mount Package • ...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MCR08BT1/D Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors *Motorola preferred devices

PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and SCR detection circuits. Supplied in surface mount package for use in automated 0.8 AMPERE RMS manufacturing. 200 thru 600 Volts • Sensitive Gate Trigger Current • Blocking Voltage to 600 Volts • Glass Passivated Surface for Reliability and Uniformity • Surface Mount Package • Devices Supplied on1KReel CASE 318E-04 (SOT-223) STYLE 10 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage(1) VDRM, VRRM Volts (1/2 Sine Wave, RGK = 1000 Ω, TJ = 25 to 110°C) MCR08BT1 200 MCR08DT1 400 MCR08MT1 600 On-State Current RMS (TC = 80°C) IT(RMS) 0.8 Amps Peak Non-repetitive Surge Current ITSM 10 Amps (One Full Cycle, 60 Hz, TC = 25°C) Circuit Fusing Considerations (t = 8.3 ms) I2t 0.4 A2s Peak Gate Power, Forward, TA = 25°C PGM 0.1 Watts Average Gate Power (TC = 80°C, t = 8.3 ms) PG(AV) 0.01 Watts Operating Junction Temperature Range TJ –40 to +110 °C Storage Temperature Range Tstg –40 to +150 °C Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) TL 260 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 156 °C/W PCB Mounted per Figure 1 Thermal Resistance, Junction to Tab RθJT 25 °C/W Measured on Anode Tab Adjacent to Epoxy 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data 1 Motorola, Inc. 1995,

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted, RGK = 1 KΩ)

Characteristic Symbol Min Typ Max Unit Peak Repetitive Forward or Reverse Blocking Current IDRM, IRRM (VAK = Rated VDRM or VRRM, RGK = 1000 Ω) TJ = 25°C — — 10 µA TJ = 110°C — — 200 µA Maximum On-State Voltage (Either Direction)* VTM — — 1.7 Volts (IT = 1.0 A Peak, TA = 25°C) Gate Trigger Current (Continuous dc) IGT — — 200 µA (Anode Voltage = 7.0 Vdc, RL = 100 Ω) Holding Current IH — — 5.0 mA (VD = 7.0 Vdc, Initializing Current = 20 mA, RGK = 1000 Ω) Gate Trigger Voltage (Continuous dc) VGT — — 0.8 Volts (Anode Voltage = 7.0 Vdc, RL = 100 Ω) Critical Rate-of-Rise of Off State Voltage dv/dt 10 — — V/µs (Vpk = Rated VDRM, TC = 110°C, RGK = 1000 Ω, Exponential Method) * Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 0.15 3.8 0.079 2.0 0.244 0.091 0.091 6.2 2.3 2.3 0.079 2.0 inches 0.059 0.059 0.059 mm BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. 0.984 1.5 1.5 1.5 BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. 25.0 MATERIAL: G10 FIBERGLASS BASE EPOXY 0.096 0.096 0.096 2.44 2.44 2.44 0.059 0.059 1.5 1.5 0.472 12.0

Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223

2 Motorola Thyristor Device Data, 10 160 150 TYPICAL L 140 MAXIMUM 120 DEVICE MOUNTED ON L1.0 FIGURE 1 AREA = L2 110 4PCB WITH TAB AREA 100 AS SHOWN 901230.1 70 TYPICAL AT TJ = 110°C MAX AT T = 110°C 50 MINIMUMJ 2 MAX AT TJ = 25°C 40 FOOTPRINT = 0.076 cm 0.01 30 0 1.0 2.0 3.0 4.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) FOIL AREA (cm2)

Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal Resistance versus Copper Tab Area

110 110 1.0 cm2 FOIL, 50 OR 100 α 100 60 Hz HALFWAVE 50 OR 60 Hz HALFWAVE dc 90 α = CONDUCTION 90 ANGLE 180° 80 80 dc 120° 70 70 180° 60 60 α = 30° 120° 50 60°α = 30° 50 40 60° 40 90° 90° α 30 30 α = CONDUCTION

ANGLE

20 20 0 0.1 0.2 0.3 0.4 0.5 0 0.1 0.2 0.3 0.4 0.5 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 4. Current Derating, Minimum Pad Size Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature Reference: Ambient Temperature

110 110 PAD AREA = 4.0 cm2, 50 dc 50 OR 60 Hz HALFWAVE OR 60 Hz HALFWAVE 100 dc 180° 180° α ° 120° = 30 120° 80 α = 30° 60° 60° 90° 90° 60ααα= CONDUCTION α = CONDUCTION ANGLE ANGLE 50 85 0 0.1 0.2 0.3 0.4 0.5 0 0.1 0.2 0.3 0.4 0.5 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 6. Current Derating, 2.0 cm Square Pad Figure 7. Current Derating Reference: Ambient Temperature Reference: Anode Tab Motorola Thyristor Device Data 3

TA , MAXIMUM ALLOWABLE TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( ° C) AMBIENT TEMPERATURE ( ° C) IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) T(tab), MAXIMUM ALLOWABLE TA , MAXIMUM ALLOWABLE RθJA , JUNCTION TO AMBIENT TAB TEMPERATURE ( ° C) AMBIENT TEMPERATURE ( ° C) THERMAL RESISTANCE, ( ° C/W), 1.0 1.0 0.9αα= 30° 0.8 α = CONDUCTION ANGLE 60° 0.7 0.6 90° 0.5 0.1 0.4 dc 0.3 180° 0.2 120° 0.1 0 0.01 0 0.1 0.2 0.3 0.4 0.5 0.0001 0.001 0.01 0.1 1.0 10 100 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) t, TIME (SECONDS)

Figure 8. Power Dissipation Figure 9. Thermal Response Device Mounted on Figure 1 Printed Circuit Board

0.7 2.0 VAK = 7.0 V VAK = 7.0 V 0.6 RL = 140 Ω RL = 3.0 k RGK = 1.0 kΩ RGK = 1.0 k 0.5 1.0 0.4 0.3 0 –40 –20 0 20 40 60 80 110 –40 –20 0 20 40 60 80 110 TJ, JUNCTION TEMPERATURE, (°C) TJ, JUNCTION TEMPERATURE, (°C)

Figure 10. Typical Gate Trigger Voltage Figure 11. Typical Normalized Holding Current

versus Junction Temperature versus Junction Temperature 0.7 1000 0.65 RGK = 1000 Ω, RESISTOR 0.6 CURRENT INCLUDED 0.55 0.5 VAK = 7.0 V RL = 140 Ω 0.45 VAK = 7.0 V WITHOUT GATE RESISTOR RL = 140 Ω 10 0.4 TJ = 25°C 0.35 0.3 1.0 0.1 1.0 10 100 1000 –40 –20 0 20 40 60 80 110 IGT, GATE TRIGGER CURRENT (µA) TJ, JUNCTION TEMPERATURE (°C)

Figure 12. Typical Range of VGT Figure 13. Typical Gate Trigger Current

versus Measured IGT versus Junction Temperature 4 Motorola Thyristor Device Data MAXIMUM AVERAGE POWER VGT, GATE TRIGGER VOLTAGE (VOLTS) VGT , GATE TRIGGER VOLTAGE (VOLTS) P(AV),DISSIPATION (WATTS) I H , HOLDING CURRENTrT, TRANSIENT THERMAL RESISTANCE I GT , GATE TRIGGER CURRENT ( µA) (NORMALIZED) NORMALIZED, 100 10000 T = 25°C Vpk = 400 VJ 1000 µ 50010 IGT = 48 A 100 TJ = 25° IGT = 7 µA 10 1.0 125° 50° 5.0 1.0 110° 75° 0.5 0.1 0.1 1.0 10 100 1000 10,000 100,000 10 100 1000 10,000 100,000 RGK, GATE-CATHODE RESISTANCE (OHMS) RGK, GATE-CATHODE RESISTANCE (OHMS)

Figure 14. Holding Current Range versus Figure 15. Exponential Static dv/dt versus Junction Gate-Cathode Resistance Temperature and Gate-Cathode Termination Resistance

10000 10000 300 V TJ = 110°C TJ = 110°C 1000 200 V 1000 400 V (PEAK) 100 V 500 400 V 500 100 50 V 100 RGK = 100 50 50 500 V 10 10 RGK = 1.0 k 5.0 5.0

R

1.0 1.0 GK = 10 k 10 100 1000 10,000 0.01 0.1 1.0 10 100 RGK, GATE-CATHODE RESISTANCE (OHMS) CGK, GATE-CATHODE CAPACITANCE (nF)

Figure 16. Exponential Static dv/dt versus Peak Figure 17. Exponential Static dv/dt versus Voltage and Gate-Cathode Termination Resistance Gate-Cathode Capacitance and Resistance

IGT = 70 µA 10 IGT = 5 µA IGT = 35 µA 5.0 I = 15 µA 1.0 GT 10 100 1000 10,000 100,000 GATE-CATHODE RESISTANCE (OHMS)

Figure 18. Exponential Static dv/dt versus Gate-Cathode Termination Resistance and Product Trigger Current Sensitivity Motorola Thyristor Device Data 5

STATIC dv/dt (V/ µ S) I H , HOLDING CURRENT (mA) STATIC dv/dt (V/ µ S) STATIC dv/dt (V/ µ S) STATIC dv/dt (V/ µ S),

PACKAGE DIMENSIONS A F

NOTES: 2 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. STYLE 10: 3 CONTROLLING DIMENSION: INCH.4 PIN 1. CATHODE

S B 2. ANODE INCHES MILLIMETERS

1233. GATE DIM MIN MAX MIN MAX 4. ANODE A 0.249 0.263 6.30 6.70 B 0.130 0.145 3.30 3.70 C 0.060 0.068 1.50 1.75 D 0.024 0.035 0.60 0.89

D F 0.115 0.126 2.90 3.20 L G 0.087 0.094 2.20 2.40 G H 0.0008 0.0040 0.020 0.100 J J 0.009 0.014 0.24 0.35

K 0.060 0.078 1.50 2.00

C L 0.033 0.041 0.85 1.05

M 0 10 0 10 0.08 (0003)

HMS0.264 0.287 6.70 7.30 K CASE 318E-04

(SOT–223) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 Motorola Thyristor Device Data ◊ MCR08BT1/D]
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