Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MBS4991/D Diode Thyristors

Order this document SEMICONDUCTOR TECHNICAL DATA by MBS4991/D Diode Thyristors .designed for full-wave triggering in Triac phase control circuits, half-wave SCR triggering application and as voltage level detectors. Supplied in an inexpensive plastic TO-226AA package for high-volume requirements, this low-cost plastic SBS package is readily adaptable for use in automatic insertion equipment. (PLASTIC) • Low Switching Voltage — 8 Volts Typical • Uniform Characteristics in Each Direction • Low On-State Voltage — 1.7 Volts Maximum • Low Off-State Current — 0.1 µA Maximum • Low Temperature Coeffic...
Author: Gould Shared: 8/19/19
Downloads: 637 Views: 4333

Content

Order this document SEMICONDUCTOR TECHNICAL DATA by MBS4991/D Diode Thyristors

.designed for full-wave triggering in Triac phase control circuits, half-wave SCR triggering application and as voltage level detectors. Supplied in an inexpensive plastic TO-226AA package for high-volume requirements, this low-cost plastic SBS package is readily adaptable for use in automatic insertion equipment. (PLASTIC) • Low Switching Voltage — 8 Volts Typical • Uniform Characteristics in Each Direction • Low On-State Voltage — 1.7 Volts Maximum • Low Off-State Current — 0.1 µA Maximum • Low Temperature Coefficient — 0.02 %/°C Typical MT2 MT1

G

MT1

G

MT2 CASE 29-04 (TO-226AA) STYLE 12 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Power Dissipation PD 500 mW DC Forward Current IF 200 mA DC Gate Current (Off-State Only) IG(off) 5 mA Repetitive Peak Forward Current IFM(rep) 2 Amps (1% Duty Cycle, 10 µs Pulse Width, TA = 100°C) Non-repetitive Forward Current IFM(nonrep) 6 Amps (10 µs Pulse Width, TA = 25°C) Operating Junction Temperature Range TJ –55 to +125 °C Storage Temperature Range Tstg –65 to +150 °C REV 2 Motorola Thyristor Device Data 1 Motorola, Inc. 1995,

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit Switching Voltage MBS4991 VS6810 Vdc MBS4992, MBS4993 7.589Switching Current MBS4991 IS — 175 500 µAdc MBS4992 — 90 120 MBS4993 175 250 Switching Voltage Differential (See Figure 10) MBS4991 VS1–VS2 — 0.3 0.5 Vdc MBS4992, MBS4993 — 0.1 0.2 Gate Trigger Current MBS4992 IGF — — 100 µAdc (VF = 5 Vdc, RL = 1 k ohm) MBS4993 — — 500 Holding Current MBS4991 IH — 0.7 1.5 mAdc MBS4992 — 0.2 0.5 MBS4993 — 0.3 0.75 Off-State Blocking Current IB µAdc (VF = 5 Vdc, TA = 25°C) MBS4991 — 0.08 1 (VF = 5 Vdc, TA = 85°C) MBS4991 — 2 10 (VF = 5 Vdc, TA = 25°C) MBS4992, MBS4993 — 0.08 0.1 (VF = 5 Vdc, TA = 100°C) MBS4992, MBS4993 — 6 10 Forward On-State Voltage VF Vdc (IF = 175 mAdc) MBS4991 — 1.4 1.7 (IF = 200 mAdc) MBS4992, MBS4993 — 1.5 1.7 Peak Output Voltage (Cc = 0.1 µF, RL = 20 ohms, (Figure 7) Vo 3.5 4.8 — Vdc Turn-On Time (Figure 8) ton — 1 — µs Turn-Off Time (Figure 9) toff — 30 — µs Temperature Coefficient of Switching Voltage (–50 to +125°C) TC — +0.02 — %/°C Switching Current Differential (See Figure 10) IS1–IS2 — — 100 µA

TYPICAL ELECTRICAL CHARACTERISTICS FIGURE 1 – SWITCHING VOLTAGE versus TEMPERATURE FIGURE 2 – SWITCHING CURRENT versus TEMPERATURE

1.04 8.0 1.03 7.0 1.02 6.0 1.01 5.0 1.00 4.0 0.99 3.0 0.98 2.0 0.97 1.0 0.96 0 –75 –50 –25 0 +25 +50 +75 +100 +125 –75 –50 –25 0 +25 +50 +75 +100 +125 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) 2 Motorola Thyristor Device Data VS, SWITCHING VOLTAGE (NORMALIZED) IS , SWITCHING CURRENT (NORMALIZED),

FIGURE 3 – HOLDING CURRENT versus TEMPERATURE FIGURE 4 – OFF-STATE BLOCKING CURRENT

versus TEMPERATURE 8.0 10.0 7.0 Normalized 6.0 V = 5.0 Vto F 25°C 1.0 5.0 4.0 3.0 0.1 2.0 1.0 0 0.01 –75 –50 –25 0 +25 +50 +75 +100 +125 –50 –25 0 +25 +50 +75 +100 +125 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)

FIGURE 5 – ON-STATE VOLTAGE versus FORWARD CURRENT FIGURE 6 – PEAK OUTPUT VOLTAGE (FUNCTION OF RL AND Cc)

10 7.0 6.0 1.0 5.0 4.0 RL = 500 Ω 3.0 RL = 100 Ω 0.1 RL = 50 Ω 2.0 RL = 20 Ω RL = 5 Ω 1.0 TA = 25°C0.01001.0 2.0 3.0 4.0 5.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 VF, FORWARD ON-STATE VOLTAGE (VOLTS) Cc, CHARGING CAPACITANCE (µF)

FIGURE 7 – PEAK OUTPUT VOLTAGE TEST CIRCUIT

10 K Cc 15 V Vin D.U.T. RL 0 10 ms V0

MIN Motorola Thyristor Device Data 3

I F, FORWARD ON-STATE CURRENT (AMP) I H , HOLDING CURRENT (NORMALIZED) I B, OFF-STATE BLOCKING CURRENT ( µ A)Vo, PEAK OUTPUT VOLTAGE (VOLTS),

FIGURE 8 – TURN-ON TIME TEST CIRCUIT

Mercury Relay 1.0 kΩ Anode Voltage VS + 12 V 1.0 kΩ D.U.T. – 0.01 µF + ton VF VF + 0.1 (VS–VF) Turn-on time is measured from the time VS is achieved to the time when the anode voltage drops to within 90% of the difference between VS and VF.

FIGURE 9 – TURN-OFF TIME TEST CIRCUIT

+I VF1 100 Ω 500 Ω + C IH1 VS1 5.0 V MT2 IS1 I – S1 –V +V Mercury I Relay D.U.T. S2 IB1 (N.O.) VS2 IH2 MT1 VF2 –I

CHARACTERISTICS

With the SBS in conduction and the relay contacts open, close the contacts to cause anode A2 to be driven negative. Decrease C until the SBS just remains off when anode A2 becomes positive. The turn off time, toff, is the time from initial contact closure and until anode A2 voltage reaches zero volts.

FIGURE 10 – DEVICE EQUIVALENT CIRCUIT, CHARACTERISTICS AND SYMBOLS

MT2 +I VF1 MT2 IH1 VS1 IS1 IS1GG–V +V IS2 IB1 VS2 IH2 MT1

CIRCUIT SYMBOL

VF2 MT1 –I

EQUIVALENT CIRCUIT CHARACTERISTICS

4 Motorola Thyristor Device Data,

PACKAGE DIMENSIONS

NOTES:

A B 1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. STYLE 12: 3. CONTOUR OF PACKAGE BEYOND DIMENSION R

R PIN 1. MAIN TERMINAL 1 IS UNCONTROLLED.

2. GATE 4. DIMENSION F APPLIES BETWEEN P AND L.

P 3. MAIN TERMINAL 2 DIMENSION D AND J APPLY BETWEEN L AND K L MINIMUM. LEAD DIMENSION IS UNCONTROLLED F IN P AND BEYOND DIMENSION K MINIMUM.SEATING

PLANE K INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19

XXDD0.016 0.022 0.41 0.55 G F 0.016 0.019 0.41 0.48 J G 0.045 0.055 1.15 1.39H H 0.095 0.105 2.42 2.66 V J 0.015 0.020 0.39 0.50C K 0.500 ––– 12.70 ––– SECTION X–X L 0.250 ––– 6.35 –––

1NN0.080 0.105 2.04 2.66P ––– 0.100 ––– 2.54

N R 0.115 ––– 2.93 –––V 0.135 ––– 3.43 ––– CASE 29-04

(TO–226AA)

Motorola Thyristor Device Data 5

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 Motorola Thyristor Device Data ◊ MBS4991/D]
15

Similar documents

Order this document SEMICONDUCTOR TECHNICAL DATA by MAC97/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC97/D .designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO–92 package which (Device Date Code is readily adaptable for use in automatic insertion e
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC8S/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC8S/D Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave control of ac TRIACS loads such as appliance controls, heater controls, motor controls, and other 8 AMPERES RMS power switching applications. 4
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS Designed for high performance full-wave ac control applications where high 8.0 AMPERES RMS
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS Designed for high performance full-wave ac control applications where high 8.0 AMPERES RMS noise immunity and high commutating di/dt are required. 400 thru 800 • Blocking Voltage to 800 Volts VOLTS • On-State Current Rating of 8.0 Amper
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS Designed for high performance full-wave ac control applications where high 8 AMPERES RMS
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS Designed for high performance full-wave ac control applications where high 8 AMPERES RMS noise immunity and high commutating di/dt are required. 400 thru 800 • Blocking Voltage to 800 Volts VOLTS • On-State Current Rating of 8.0 Amperes
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC6071/D *Motorola preferred devices Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC6071/D *Motorola preferred devices Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, TRIACs motor controls, heating controls and power supplies; or wherever full-wave silicon 4 AMP
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC4DSM/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC4DSM/D Silicon Bidirectional Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size Surface Mount
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC4DHM/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC4DHM/D Silicon Bidirectional Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size Surface Mount
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC4DCM/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC4DCM/D Silicon Bidirectional Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size Surface Mount
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC321/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC321/D Silicon Bidirectional Thyristors .designed for full-wave ac control applications primarily in industrial environments needing noise immunity. • Guaranteed High Commutation Voltage dv/dt — 500 V/µs Min @ TC = 25°C TRIACs • High Blocking Vol
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC320FP/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC320FP/D Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state device
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC320/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC320/D Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC310/D Silicon Bidirectional Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC310/D Silicon Bidirectional Triode Thyristors .designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. • S
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC229AFP/D Silicon Bidirectional Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC229AFP/D Silicon Bidirectional Triode Thyristors .designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications.
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC229/D Silicon Bidirectional Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC229/D Silicon Bidirectional Triode Thyristors .designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. • A
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC228FP/D Silicon Bidirectional Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC228FP/D Silicon Bidirectional Triode Thyristors .designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. •
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC228/D Silicon Bidirectional Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC228/D Silicon Bidirectional Triode Thyristors .designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. • S
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC224/D Silicon Bidirectional 40 Amperes RMS Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC224/D Silicon Bidirectional 40 Amperes RMS Triode Thyristors .designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power supplies. TRIACs • Blocking Voltage to 800 Volts 40 AMPERE
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223FP/D Silicon Bidirectional Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223FP/D Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications, such as lighting systems, heater controls, motor controls and power supplies; or wherever full-wave silicon- ISOLATED TRIACs gate-controll
Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF2P03HD/D  Medium Power Surface Mount Products Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF2P03HD/D Medium Power Surface Mount Products Motorola Preferred Device DUAL TMOS MiniMOS devices are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola’s High Cell Density HDTMOS process. 2.0 AMPERES These miniature surfac
Order this document SEMICONDUCTOR TECHNICAL DATA by MLP2N06CL/D  SMARTDISCRETES  Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MLP2N06CL/D SMARTDISCRETES Motorola Preferred Device Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET VOLTAGE CLAMPED The MLP2N06CL is designed for applications that require a rugged power switching CURRENT LIMITING device w
Order this document SEMICONDUCTOR TECHNICAL DATA by MLP1N06CL/D SMARTDISCRETES  Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MLP1N06CL/D SMARTDISCRETES Internally Clamped, Current Limited Motorola Preferred Device N–Channel Logic Level Power MOSFET These SMARTDISCRETES devices feature current limiting for short circuit VOLTAGE CLAMPED protection, an integral gate–to–sou
Order this document SEMICONDUCTOR TECHNICAL DATA by MLD2N06CL/D  SMARTDISCRETES  Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MLD2N06CL/D SMARTDISCRETES Motorola Preferred Device Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET VOLTAGE CLAMPED The MLD2N06CL is designed for applications that require a rugged power switching CURRENT LIMITING device w
Order this document SEMICONDUCTOR TECHNICAL DATA by MKP3V110/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MKP3V110/D .designed for direct interface with the ac power line. Upon reaching the breakover *Motorola preferred devices voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like
Order this document SEMICONDUCTOR TECHNICAL DATA by MKP1V120/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MKP1V120/D .designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like an SCR until the main termin
Order this document SEMICONDUCTOR TECHNICAL DATA by MJL16218/D   NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MJL16218/D NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device The MJL16218 is a state–of–the–art SWITCHMODE bipolar power transistor. It is POWER TRANSISTOR specifically designed for use
ON Semiconductor SWITCHMODE MJE13007 NPN Bipolar Power Transistor For Switching Power Supply Applications • VCEO(sus) 400 V • Reverse Bias SOA with Inductive Loads @ TC = 100°C
ON Semiconductor SWITCHMODE MJE13007 NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly POWER TRANSISTOR suited for 115 and 220 V switchmode appl
Order this document SEMICONDUCTOR TECHNICAL DATA by MJ3281A/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MJ3281A/D " *Motorola Preferred Device ! 15 AMPERE The MJ3281A and MJ1302A are PowerBase power transistors for high power COMPLEMENTARY audio, disk head positioners and other linear applications. SILICON POWER TRANSISTORS • Designed for 100 W Audi
ON Semiconductor PNP MJ21193* Silicon Power Transistors NPN • Total Harmonic Distortion Characterized 16 AMPERE • High DC Current Gain – SILICON POWER
ON Semiconductor PNP MJ21193* Silicon Power Transistors NPN The MJ21193 and MJ21194 utilize Perforated Emitter technology MJ21194* and are specifically designed for high power audio output, disk head *ON Semiconductor Preferred Device positioners and linear applications. • Total Harmonic Distortion
Order this document SEMICONDUCTOR TECHNICAL DATA by MHW916/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MHW916/D The RF Line Designed specifically for the European Digital Extended Group Special Mobile (GSM) Base Station applications in the 925–960 MHz frequency range. MHW916 operates from a 26 Volt supply and requires 15.5 dBm of RF input power. • S
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B8A120A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B8A120A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output 8.0 AMP, 1200 VOLT inverter and brake transistor/diode in a single convenient package. T