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Order this document SEMICONDUCTOR TECHNICAL DATA by MAC97/D .designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO–92 package which (Device Date Code is readily adaptable for use in automatic insertion equipment. 9625 and Up) • One–Piece, Injection–Molded Unibloc Package Motorola preferred devices • Sensitive Gate Triggering in Four Trigger Modes for all possible Combinations of Trigger Sources, and Especially for Circuits that Source Gate Drives • All Diffused and Glassivated Junctions for Maximum...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MAC97/D

.designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO–92 package which (Device Date Code is readily adaptable for use in automatic insertion equipment. 9625 and Up) • One–Piece, Injection–Molded Unibloc Package Motorola preferred devices • Sensitive Gate Triggering in Four Trigger Modes for all possible Combinations of Trigger Sources, and Especially for Circuits that Source Gate Drives • All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability TRIACs 0.8 AMPERE RMS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 200 — 600 VOLTS Rating Symbol Value Unit Peak Repetitive Off-State Voltage VDRM Volts (Gate Open, TJ = –40 to +110°C)(1) 1/2 Sine Wave 50 to 60 Hz, Gate Open MAC97–4, MAC97A4 200 MT1 MAC97–6, MAC97A6 400 MT2 MAC97–8, MAC97A8 600

G

On-State RMS Current IT(RMS) 0.8 Amp Full Cycle Sine Wave 50 to 60 Hz (TC = +50°C) Peak Non–repetitive Surge Current ITSM 8.0 Amps (One Full Cycle, 60 Hz, TA = 110°C) Circuit Fusing Considerations I2t 0.26 A2s TJ = –40 to +110°C (t = 8.3 ms) Peak Gate Voltage (t 2.0 s) VGM 5.0 Volts MT1 Peak Gate Power (t 2.0 s) PGM 5.0 Watts G MT2 Average Gate Power (TC = 80°C, t 8.3 ms) PG(AV) 0.1 Watt Peak Gate Current (t 2.0 s) IGM 1.0 Amp CASE 29–04 Operating Junction Temperature Range TJ –40 to +110 °C TO–226AA, STYLE 12 Storage Temperature Range Tstg –40 to +150 °C (TO–92) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 75 °C/W Thermal Resistance, Junction to Ambient RθJA 200 °C/W (1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola Thyristor Device Data 1 Motorola, Inc. 1996, ELECTRICAL CHARACTERISTICS (TC = 25°C, and Either Polarity of MT2 to MT1 Voltage unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak Blocking Current(1) IRRM — — 0.1 mA (VD = Rated VDRM, TJ = 110°C, Gate Open) Peak On-State Voltage (Either Direction) VTM — — 1.65 Volts (ITM = 1.1 A Peak; Pulse Width 2.0 ms, Duty Cycle 2.0%) Gate Trigger Current (Continuous dc) IGT mA (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) — — 10 MT2(+), G(–) — — 10 MT2(–), G(–) — — 10 MT2(–), G(+) MAC97 — — 10 MT2(+), G(+) — — 5.0 MT2(+), G(–) — — 5.0 MT2(–), G(–) — — 5.0 MT2(–), G(+) MAC97A — — 7.0 Gate Trigger Voltage, (Continuous dc) VGT Volts (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) All Types — — 2.0 MT2(+), G(–) All Types — — 2.0 MT2(–), G(–) All Types — — 2.0 MT2(–), G(+) All Types — — 2.5 (VD = Rated VDRM, RL = 10 k Ohms, TJ = 110°C) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) All Types 0.1 — — MT2(–), G(+) All Types 0.1 — — Holding Current IH — — 5.0 mA (VD = 12 Vdc, ITM = 200 mA, Gate Open) Gate Controlled Turn–On Time tgt — 2.0 — s (VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA) Critical Rate–of–Rise of Commutation Voltage dv/dtc 1.5 — — Vs (f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS, On–State Current Duration = 2.0 mS, VDRM = 200 V, Gate Unenergized, TC = 110°C, Gate Source Resistance = 150 , See Figure 13) Critical Rate–of–Rise of Off State Voltage dv/dt 10 — — Vs (Vpk = Rated VDRM, TC = 110°C, Gate Open, Exponential Method) 2 Motorola Thyristor Device Data, 110 110 100 ° 100 = 30° = 30 90 60° 90 60° DC 90°90° DC80 180° 70 180° 70 120° 120°60 α 50αα40αα= CONDUCTION ANGLE 30 α = CONDUCTION ANGLE 30 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)

Figure 1. RMS Current Derating Figure 2. RMS Current Derating

1.2 10 TYPICAL @ TJ = 25°C 1.0 α MAXIMUM @ TJ = 110°C α 0.8 1.0 α = CONDUCTION ANGLE 0.6 MAXIMUM @ TJ = 25°C 0.4 0.1 0.2 MAXIMUM @ TJ = 110°C 0 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IT(RMS), RMS ON–STATE CURRENT (AMPS) VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)

Figure 3. Power Dissipation Figure 4. On–State Characteristics

1.0 10 5.0 ZJC(t) = RJC(t) r(t) 0.1 3.0 TJ = 110°C 2.0 f = 60 Hz

CYCLE

Surge is preceded and followed by rated current. 0.01 1.0 0.1 1.0 10 100 1103 1104 1.0 2.0 3.0 5.0 10 30 50 100 t, TIME (ms) NUMBER OF CYCLES

Figure 5. Transient Thermal Response Figure 6. Maximum Allowable Surge Current Motorola Thyristor Device Data 3

R( t ) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) P ( A V ) , MAXIMUM AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) ITSM, PEAK SURGE CURRENT (AMPS) I , INSTANTANEOUS ON–STATE CURRENT (AMPS) IT(RMS) , MAXIMUM ALLOWABLET AMBIENT TEMPERATURE ( ° C), 6.0 10 Q3 5.0 Q2 4.0 MAIN TERMINAL Q4 #2 POSITIVE Q1 3.0 1.0 2.0 MAIN TERMINAL #2 NEGATIVE 1.0 0 0.1 –40 –20 0 20 40 60 80 100 110 –40 –20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Holding Current Variation Figure 8. Typical Gate Trigger Current Variation

1.1 60 600 Vpk TJ = 110°C 0.9 Q3 50 MAIN TERMINAL Q4 #2 POSITIVE Q2 Q1 MAIN TERMINAL0.7 40 #2 NEGATIVE 0.5 30 0.3 20 –40 –20 0 20 40 60 80 100 10 100 1000 10,000 TJ, JUNCTION TEMPERATURE (°C) RGK, GATE – MT1 RESISTANCE (OHMS)

Figure 9. Gate Trigger Voltage Variation Figure 10. Exponential Static dv/dt versus Gate MT1 Resistance

10 10 60 Hz 180 Hz 60°C I 80°CTM 300 Hz 100°C 400 Hz 110°C twf12tw 6f I VDRM = 200 V VDRM (didt) TMc 1000 1.0 1.0 1.0 10 60 70 80 90 100 110 di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS) TJ, JUNCTION TEMPERATURE (°C)

Figure 11. Typical Commutating dv/dt versus Figure 12. Typical Commutating dv/dt versus Current Crossing Rate and Junction Temperature Junction Temperature at 0.8 Amps RMS

4 Motorola Thyristor Device Data COMMUTATING dv/dtVGT, GATE TRIGGER VOLTAGE (VOLTS) I H , HOLDING CURRENT (mA) dv/dtc , (V/ S) COMMUTATING dv/dt STATIC dv/dt (V/ S) IGT, GATE TRIGGER CURRENT (mA) dv/dtc , (V/ S), 80 mHY 1N4007

LL

75 VRMS ADJUST FOR MEASURE RS 56 ITM, 60 Hz V

I AC

TRIGGER CHARGE – 0.047 C 200 V CHARGE CONTROL

S

2 CS ADJUST FOR + dv/dt(c) 1N914 5115FNON–POLAR G

CL

NOTE: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.

Figure 13. Simplified Q1 (dv/dt)c Test Circuit Motorola Thyristor Device Data 5

TRIGGER CONTROL,

PACKAGE DIMENSIONS

NOTES:

A B 1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982. STYLE 12: 2. CONTROLLING DIMENSION: INCH. PIN 1. MAIN TERMINAL 1 3. CONTOUR OF PACKAGE BEYOND DIMENSION R

R 2. GATE IS UNCONTROLLED.

3. MAIN TERMINAL 2 4. DIMENSION F APPLIES BETWEEN P AND L.

P DIMENSION D AND J APPLY BETWEEN L AND K L MINIMUM. LEAD DIMENSION IS UNCONTROLLED F IN P AND BEYOND DIMENSION K MINIMUM.SEATING

PLANE K INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19

XXDD0.016 0.022 0.41 0.55 G F 0.016 0.019 0.41 0.48 J G 0.045 0.055 1.15 1.39H H 0.095 0.105 2.42 2.66 V J 0.015 0.020 0.39 0.50C K 0.500 ––– 12.70 ––– SECTION X–X L 0.250 ––– 6.35 –––

1NN0.080 0.105 2.04 2.66P ––– 0.100 ––– 2.54

N R 0.115 ––– 2.93 –––V 0.135 ––– 3.43 ––– CASE 29–04

(TO–226AA) (TO–92) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 Motorola Thyristor Device Data ◊ MAC97/D]
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