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Order this document SEMICONDUCTOR TECHNICAL DATA by MAC8S/D Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave control of ac TRIACS loads such as appliance controls, heater controls, motor controls, and other 8 AMPERES RMS power switching applications. 400 THRU 800 • VOLTSSensitive Gate Allows Triggering by Microcontrollers and other Logic Circuits • High Immunity to dv/dt — 25 V/s Minimum at 110C • High Commutating di/dt — 8.0 A/ms Minimum at 110C MT2 • Minimum and Maximum Values of IGT, VGT and IH Specified for ease of Design • On-State Current R...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MAC8S/D Silicon Bidirectional Thyristors

Designed for industrial and consumer applications for full wave control of ac TRIACS loads such as appliance controls, heater controls, motor controls, and other 8 AMPERES RMS power switching applications. 400 THRU 800 • VOLTSSensitive Gate Allows Triggering by Microcontrollers and other Logic Circuits • High Immunity to dv/dt — 25 V/s Minimum at 110C • High Commutating di/dt — 8.0 A/ms Minimum at 110C MT2 • Minimum and Maximum Values of IGT, VGT and IH Specified for ease of Design • On-State Current Rating of 8 Amperes RMS at 70C • High Surge Current Capability — 70 Amperes • Blocking Voltage to 800 Volts MT1 MT2 • Rugged, Economical TO220AB Package G CASE 221A–06 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Off-State Voltage (1) VDRM Volts (TJ = –40 to 110°C, Sine Wave, 50 to 60Hz, Gate Open) MAC8SD 400 MAC8SM 600 MAC8SN 800 On-State RMS Current IT(RMS) 8 A (Full Cycle Sine Wave, 60Hz, TJ = 70°C) Peak Non-repetitive Surge Current ITSM 70 A (One Half Cycle, 60Hz, TJ = 110°C) Circuit Fusing Consideration I2t 20 A2sec (t = 8.3 ms) Peak Gate Power PGM 16 Watts (Pulse Width ≤ 1.0µs, TC = 70°C) Average Gate Power PG(AV) 0.35 Watts (t = 8.3ms, TC = 70°C) Operating Junction Temperature Range TJ –40 to +110 °C Storage Temperature Range Tstg –40 to +150 °C THERMAL CHARACTERISTICS Thermal Resistance °C/W — Junction to Case RθJC 2.2 — Junction to Ambient RθJA 62.5 Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds TL 260 °C (1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. REV0MMoototorrolla, ITnch.y 1r9is95tor Device Data 1 Data Sheets,

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current IDRM mA (VD = Rated VDRM, Gate Open) TJ = 25°C — — 0.01 TJ = 110°C — — 2.0

ON CHARACTERISTICS

Peak On-State Voltage* (ITM = 11A) VTM — — 1.85 Volts Continuous Gate Trigger Current (VD = 12 V, RL = 100Ω) IGT mA MT2(+), G(+) .8 2.0 5.0 MT2(+), G(–) .8 3.0 5.0 MT2(–), G(–) .8 3.0 5.0 Hold Current (VD = 12V, Gate Open, Initiating Current = 150mA) IH 1.0 3.0 10 mA Latching Current (VD = 24V, IG = 5mA) IL mA MT2(+), G(+) 2.0 5.0 15 MT2(–), G(–) 2.0 10 20 MT2(+), G(–) 2.0 5.0 15 Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100Ω) VGT Volts MT2(+), G(+) 0.45 0.62 1.5 MT2(+), G(–) 0.45 0.60 1.5 MT2(–), G(–) 0.45 0.65 1.5

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off–State Voltage (dv/dt)c 8.0 10 — A/ms (VD = 400V, ITM = 3.5A, Commutating dv/dt = 10V/sec, Gate Open, TJ = 110C, f= 500 Hz, Snubber: CS = 0.01 F, RS = 15, see Figure 16.) Critical Rate of Rise of Off-State Voltage dv/dt 25 75 — V/s (VD = Rate VDRM, Exponential Waveform, RGK = 510, TJ = 110°C) * Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. 110 25

DC

100 20 180° α = 30 and 60° α 120° 90° 90 15 = CONDUCTION ANGLE 60° α 80 α 10 = CONDUCTION ANGLE 90° = 30° 70 180° 5

DC

6000246810 120246810 12 IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)

Figure 1.0 RMS Current Derating Figure 2.0 Maximum On–State Power Dissipation Data Sheets 2 Motorola Thyristor Device Data

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (°C) P(AV), AVERAGE POWER DISSIPATION (WATTS), 100 1 Typical @ TJ = 25 °C Maximum @ TJ = 110°C ZJC(t) = RJC(t) r(t) 0.1 1 Maximum @ TJ = 25 °C 0.1 0.01 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0.1 1 10 100 1000 1104 VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3.0 On–State Characteristics Figure 4.0 Transient Thermal Response

10 25 8 20 6 15 MT2 NEGATIVE 4 10 Q3 MT2 POSITIVE25Q100–40 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5.0 Typical Holding Current Versus Figure 6.0 Typical Latching Current Versus Junction Temperature Junction Temperature

14 1 Q1 12 0.9 Q3 10 0.8 8 0.7 Q3 6 0.6 Q3 Q2 4 0.5 Q2 2 0.4 Q1 Q1 0 0.3 –40 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7.0 Typical Gate Trigger Current Versus Figure 8.0 Typical Gate Trigger Voltage Versus Junction Temperature Junction Temperature Motorola Thyristor Device Data 3 Data Sheets

IGT, GATE TRIGGER CURRENT (mA) I H , HOLDING CURRENT (mA) I T, INSTANTANOUS ON–STATE CURRENT (AMPS) VGT, GATE TRIGGER VOLTAGE (VOLTS) I L , LATCHING CURRENT (mA) R(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED), 200 130 TJ = 110°C RG – MT1 = 510 160 VPK = 400V TJ = 100°C 600V 800V 120 110°C100 80 120°C 60 80 100 200 300 400 500 600 700 800 900 1000 400 450 500 550 600 650 700 750 800 RGK, GATE–MT1 RESISTANCE (OHMS) VPK, Peak Voltage (Volts)

Figure 9.0 Typical Exponential Static dv/dt Versus Figure 10.0 Typical Exponential Static dv/dt Versus Gate–MT1 Resistance, MT2(+) Peak Voltage, MT2(+)

130 350 VPK = 400V 110 TJ = 100°C 100 600V 110°C R – MT1 = 510 120°CG 150 80 RG – MT1 = 510 800V 70 100100 105 110 115 120 125 400 450 500 550 600 650 700 750 800 TJ, Junction Temperature (°C) VPK, Peak Voltage (Volts)

Figure 11.0 Typical Exponential Static dv/dt Versus Figure 12.0 Typical Exponential Static dv/dt Versus Junction Temperature, MT2(+) Peak Voltage, MT2(–)

350 300 300 VPK = 400V VPK = 400V250 600V 600V 200 200 800V 800V RG – MT1 = 510 TJ = 110°C 50 100 100 105 110 115 120 125 100 200 300 400 500 600 700 800 900 1000 TJ, Junction Temperature (°C) RGK, GATE–MT1 RESISTANCE (OHMS)

Figure 13.0 Typical Exponential Static dv/dt Versus Figure 14.0 Typical Exponential Static dv/dt Versus Junction Temperature, MT2(–) Gate–MT1 Resistance, MT2(–) Data Sheets 4 Motorola Thyristor Device Data

STATIC dv/dt (V/S) STATIC dv/dt (V/S) STATIC dv/dt (V/S) STATIC dv/dt (V/S) STATIC dv/dt (V/S) STATIC dv/dt (V/S), VPK = 400V 90°C 10 100°C f = 2 tw tw 6f I (di/dt) = TM 110°Cc 1000

VDRM

1 5 10 15 20 25 30 (di/dt)c, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 15.0 Critical Rate of Rise of Commutating Voltage

20 mHY 1N4007 400 VRMS LL ADJUST FOR MEASURE ITM, 60 HzVIRS 15AC

CHARGE

TRIGGER – CHARGE CONTROL C 0.01 F 400VS+ ADJUST FOR 2 dv/dt 1N914 (c) 5 F 51 NON-POLARG1

CL

Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.

Figure 16.0 Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage Motorola Thyristor Device Data 5 Data Sheets

(dv/dt)c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ s) TRIGGER CONTROL,

NOTES

Data Sheets 6 Motorola Thyristor Device Data,

NOTES

Motorola Thyristor Device Data 7 Data Sheets,

PACKAGE DIMENSIONS

NOTES: –T– SEATINGPLANE 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

BFC2. CONTROLLING DIMENSION: INCH. T 3. DIMENSION Z DEFINES A ZONE WHERE ALLS BODY AND LEAD IRREGULARITIES ARE

ALLOWED. INCHES MILLIMETERS

Q A DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75123UB0.380 0.405 9.66 10.28C 0.160 0.190 4.07 4.82

H D 0.025 0.035 0.64 0.88

F 0.142 0.147 3.61 3.73

K STYLE 4: G 0.095 0.105 2.42 2.66 Z PIN 1. MAIN TERMINAL1H0.110 0.155 2.80 3.93

2. MAIN TERMINAL2J0.018 0.025 0.46 0.64 3. GATE K 0.500 0.562 12.70 14.27 4. MAIN TERMINAL 2

LRL0.045 0.060 1.15 1.52

N 0.190 0.210 4.83 5.33

VJQ0.100 0.120 2.54 3.04

R 0.080 0.110 2.04 2.79

G S 0.045 0.055 1.15 1.39 D T 0.235 0.255 5.97 6.47U 0.000 0.050 0.00 1.27 N CASE 221A–06 V 0.045 ––– 1.15 –––

(TO-220AB) Z ––– 0.080 ––– 2.04 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. To order literature by mail: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. JAPAN: Nippon Motorola Ltd.; 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. To order literature electronically: MFAX: email is hidden –TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com

Data Sheets ◊ 8 Motorola Thyristor DevMicAeC D8Sa/tDa

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