Download: SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS Designed for high performance full-wave ac control applications where high 8 AMPERES RMS

SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS Designed for high performance full-wave ac control applications where high 8 AMPERES RMS noise immunity and high commutating di/dt are required. 400 thru 800 • Blocking Voltage to 800 Volts VOLTS • On-State Current Rating of 8.0 Amperes RMS at 100°C • Uniform Gate Trigger Currents in Three Modes • High Immunity to dv/dt — 250 V/µs minimum at 125°C MT2 • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating di/dt — 6.5 A/ms minimum at 125°C MT1 MT2 G CASE 221A-06 (TO-220AB) Style 4 MAXIMU...
Author: Gould Shared: 8/19/19
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SEMICONDUCTOR TECHNICAL DATA

*Motorola preferred devices

TRIACS

Designed for high performance full-wave ac control applications where high 8 AMPERES RMS noise immunity and high commutating di/dt are required. 400 thru 800 • Blocking Voltage to 800 Volts VOLTS • On-State Current Rating of 8.0 Amperes RMS at 100°C • Uniform Gate Trigger Currents in Three Modes • High Immunity to dv/dt — 250 V/µs minimum at 125°C MT2 • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating di/dt — 6.5 A/ms minimum at 125°C MT1 MT2

G

CASE 221A-06 (TO-220AB) Style 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit VDRM Peak Repetitive Off-State Voltage (1) Volts (–40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC8D 400 MAC8M 600 MAC8N 800 IT(RMS) On-State RMS Current 8.0 A (60 Hz, TC = 100°C) ITSM Peak Non-repetitive Surge Current 80 A (One Full Cycle, 60 Hz, TJ = 125°C) I2t Circuit Fusing Consideration (t = 8.3 ms) 26 A2sec PGM Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) 16 Watts PG(AV) Average Gate Power (t = 8.3 ms, TC = 80°C) 0.35 Watts TJ Operating Junction Temperature Range –40 to +125 °C Tstg Storage Temperature Range –40 to +150 °C THERMAL CHARACTERISTICS RθJC Thermal Resistance — Junction to Case 2.2 °C/W RθJA Thermal Resistance — Junction to Ambient 62.5 TL Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds 260 °C (1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data 3–45, ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS IDRM Peak Repetitive Blocking Current mA (VD = Rated VDRM, Gate Open) TJ = 25°C — — 0.01 TJ = 125°C — — 2.0 ON CHARACTERISTICS VTM Peak On-State Voltage* Volts (ITM = ±11 A Peak) — 1.2 1.6 IGT Continuous Gate Trigger Current (VD = 12 V, RL = 100 Ω) mA MT2(+), G(+) 5.0 13 35 MT2(+), G(–) 5.0 16 35 MT2(–), G(–) 5.0 18 35 IH Hold Current mA (VD = 12 V, Gate Open, Initiating Current = ±150 mA) — 20 40 IL Latch Current (VD = 24 V, IG = 35 mA) mA MT2(+), G(+); MT2(–), G(–) — 20 50 MT2(+), G(–) — 30 80 VGT Gate Trigger Voltage (VD = 12 V, RL = 100 Ω) Volts MT2(+), G(+) 0.5 0.69 1.5 MT2(+), G(–) 0.5 0.77 1.5 MT2(–), G(–) 0.5 0.72 1.5 DYNAMIC CHARACTERISTICS (di/dt)c Rate of Change of Commutating Current* See Figure 10. 6.5 — — A/ms (VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs, CL = 10 µF Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) LL = 40 mH dv/dt Critical Rate of Rise of Off-State Voltage 250 — — V/µs (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) *Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. 125 12

DC

120 10 180° α = 120, 90, 60, 30° 115 120° α = 180° 6 4 60° DC 90° 1052α= 30° 1000012345678012345678IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), ON-STATE CURRENT (AMP) Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation 3–46 Motorola Thyristor Device Data TC, CASE TEMPERATURE (°C) PAV, AVERAGE POWER (WATTS), 100 1 TYPICAL AT TJ = 25°C MAXIMUM @ TJ = 125°C 0.1 0.01 0.1 1 10 100 1000 1 · 104 t, TIME (ms)

Figure 4. Thermal Response

MAXIMUM @ TJ = 25°C 40 MT2 POSITIVE MT2 NEGATIVE 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5– 50 – 30 – 10 10 30 50 70 90 110 130 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. On-State Characteristics Figure 5. Hold Current Variation

100 1 0.95 Q2 Q2 0.9 Q3 0.85 Q3 0.8 Q1 075 10 0.7 Q1 0.65 0.6 0.55 0.5 0.45 1 0.4 – 50 – 30 – 10 10 30 50 70 90 110 130 – 50 – 30 – 10 10 30 50 70 90 110 130 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation Motorola Thyristor Device Data 3–47

IGT, GATE TRIGGER CURRENT (mA) I T, INSTANTANEOUS ON-STATE CURRENT (AMP) r(t), TRANSIENT THERMAL RESISTANCE VGT, GATE TRIGGER VOLTAGE (VOLT) IH, HOLD CURRENT (mA) (NORMALIZED), 5000 100 4.5K 4K 3.5K MT2 NEGATIVE 3K TJ = 125°C 100°C 75°C 2.5K 10 2K 1.5K1f= 1K tw 2 tw 500 MT2 POSITIVE 6f I (di/dt) TMc = VDRM 100001110 100 1000 10 15 20 25 30 35 40 45 50 55 60 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 8. Critical Rate of Rise of Off-State Voltage Figure 9. Critical Rate of Rise of

(Exponential) Commutating Voltage LL 1N4007 200 VRMS ADJUST FOR MEASURE ITM, 60 Hz VAC I

CHARGE TRIGGER

CHARGE CONTROL – 400 V + 1N914 51 NON-POLAR G 1CL Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.

Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage

3–48 Motorola Thyristor Device Data dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) (dv/dt)c , CRITICAL RATE OF RISE OFTRIGGER CONTROL COMMUTATING VOLTAGE(V/µs)]
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