Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MAC6071/D *Motorola preferred devices Silicon Bidirectional Thyristors

Order this document SEMICONDUCTOR TECHNICAL DATA by MAC6071/D *Motorola preferred devices Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, TRIACs motor controls, heating controls and power supplies; or wherever full-wave silicon 4 AMPERES RMS gate controlled solid-state devices are needed. Triac type thyristors switch from a 200 thru 600 VOLTS blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Sensitive Gate Triggering (A and B versions) Uniquely Compatible fo...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MAC6071/D

*Motorola preferred devices

Silicon Bidirectional Thyristors

.designed primarily for full-wave ac control applications, such as light dimmers, TRIACs motor controls, heating controls and power supplies; or wherever full-wave silicon 4 AMPERES RMS gate controlled solid-state devices are needed. Triac type thyristors switch from a 200 thru 600 VOLTS blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Sensitive Gate Triggering (A and B versions) Uniquely Compatible for Direct Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions MT1 • Gate Triggering 4 Mode — MAC6071A,B, MAC6073A,B, MAC6075A,B • Blocking Voltages to 600 Volts MT2 G • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability MT2 CASE 77-08

G

(TO-225AA) MT2 MT1 STYLE 5 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off-State Voltage(1) VDRM Volts (Gate Open, TJ = 25 to 110°C) MAC6071A,B 200 MAC6073A,B 400 MAC6075A,B 600 On-State Current RMS (TC = 85°C) IT(RMS) 4 Amps Peak Surge Current (One Full cycle, 60 Hz, TJ = –40 to +110°C) ITSM 30 Amps Circuit Fusing Considerations (t = 8.3 ms) I2t 3.7 A2s Peak Gate Power PGM 10 Watts Average Gate Power PG(AV) 0.5 Watt Peak Gate Voltage VGM 5 Volts Operating Junction Temperature Range TJ –40 to +110 °C Storage Temperature Range Tstg –40 to +150 °C Mounting Torque (6-32 Screw)(2) — 8 in. lb. 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common. For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds. Consult factory for lead bending options. This document contains information on a new product. Specifications and information herein are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data 1 Motorola, Inc. 1996, THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 3.5 °C/W Thermal Resistance, Junction to Ambient RθJA 75 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak Blocking Current IDRM (VD = Rated VDRM, gate open) (TJ = 25°C) — — 10 µA (TJ = 110°C) — — 2.0 mA On-State Voltage (Either Direction) VTM — 1.3 2.0 Volts (ITM = 6 A Peak) Peak Gate Trigger Voltage (Continuous dc) VGT Volts (TJ = –40°C) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+); MT2(–), G(–) 0.5 0.8 1.9 MT2(+), G(–); MT2(–), G(+) 0.5 0.8 1.9 (TJ = 110°C) MT2(+), G(+); MT2(–), G(–) 0.2 0.4 0.9 MT2(+), G(–); MT2(–), G(+) 0.2 0.4 0.9 (TJ = 25°C) MT2(+), G(+); MT2(–), G(–) 0.4 0.7 1.4 MT2(+), G(–); MT2(–), G(+) 0.4 0.7 1.4 Holding Current (Either Direction) IH mA (TJ = –40°C) (Main Terminal Voltage = 12 Vdc, Gate Open) (Initiating Current = 150 mA) 0.4 2.0 10 (TJ = 25°C) 0.2 1.0 5.0 Latching Current (VD = 6 V) IL mA MT2(+), G(+) (IG = 8 mA) TJ = 25°C — 2.0 10 MT2(+), G(–) (IG = 8 mA) — 5.0 20 MT2(–), G(–) (IG = 8 mA) — 1.0 10 MT2(–), G(+) (IG = 15 mA) — 2.0 10 Gate Trigger Current (Continuous dc) IGT mA (VD = 12 Vdc, RL = 100 Ohms) MAC6071A, MAC6073A, MAC6075A MT2(+), G(+) TJ = 25°C 0.4 2.0 5.0 MT2(+), G(–) 0.4 3.0 5.0 MT2(–), G(–) 0.4 3.0 5.0 MT2(–), G(+) 0.8 4.5 10 MT2(+), G(+) TJ = –40°C 0.8 3.5 10 MT2(+), G(–) 0.8 4.5 10 MT2(–), G(–) 0.8 5.0 10 MT2(–), G(+) 1.6 10 20 2 Motorola Thyristor Device Data,

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit Gate Trigger Current (Continuous dc) IGT mA (VD = 12 Vdc, RL = 100 Ohms) MAC6071B, MAC6073B, MAC6075B MT2(+), G(+) TJ = 25°C 0.4 1.5 3.0 MT2(+), G(–) 0.4 2.5 3.0 MT2(–), G(–) 0.4 2.5 3.0 MT2(–), G(+) 0.8 3.5 5.0 MT2(+), G(+) TJ = –40°C 0.8 3.0 8.0 MT2(+), G(–) 0.8 4.0 8.0 MT2(–), G(–) 0.8 4.5 8.0 MT2(–), G(+) 1.6 7.5 15 Turn-On Time (Either Direction) tgt — 1.5 — µs (ITM = 14 Adc, IGT = 100 mAdc)

DYNAMIC CHARACTERISTICS

Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Off–State Voltage (di/dt)c A/ms (VD = 200 V, ITM = 1.4 A, Commutating dv/dt = 0.5 V/sec, — 2.2 — Gate Open, TJ = 110°C, f = 250 Hz, Snubber: CS = 0.1 F, RS = 56 , see Figure 16) Critical Rate of Rise of Off–State Voltage dv/dt — 7.0 — V/s (VD = Rate VDRM, Exponential Waveform, RGK = OPEN, TJ = 110°C)

SAMPLE APPLICATION: TTL-SENSITIVE GATE 4 AMPERE TRIAC TRIGGERS IN MODES II AND III

0 V MC7400 LOAD 4 510 2N6071A –VEE7Ω115 VACVEE = 5.0 V 60 Hz + QUADRANT DEFINITIONS MT2(+) QUADRANT II QUADRANT I MT2(+), G(–) MT2(+), G(+) G(–) G(+) QUADRANT III QUADRANT IV MT2(–), G(–) MT2(–), G(+) MT2(–) NOTES: For detail Digital Interfacing and Silicon Bilateral Switch (SBS) trigger application information, see the Motorola’s Thyristor Data Book (DL137/D, Revision 6). 1. Interfacing Digital Circuits to Thyristor Controlled AC Loads, page 1.6–25. 2. Silicon Bilateral Switch (SBS) Applications, page 1.6–41.

Motorola Thyristor Device Data 3

, 110 7.0

DC

α 6.0 180° 105 α 120° 5.0 = 30° α = CONDUCTION ANGLE 100 90°60° 4.0 90° 60° 120° 3.0 α = 30° 2.0 90 α 180° 1.0 α = CONDUCTION ANGLE

DC

85000.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)

Figure 1. RMS Current Derating Figure 2. Maximum On–State Power Dissipation

100 10 TYPICAL @ TJ = 25°C

MAXIMUM

10 MAXIMUM @ TJ = 110°C 1.0 1.0 MAXIMUM @ TJ = 25°C 0.1 0.01 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 1.0 10 100 1 103 4 110 VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3. On–State Characteristics Figure 4. Transient Thermal Response

2.5 9.0 8.0 2.0 7.0 Q2 IG = 8 mA 6.0 1.5 MT2 NEGATIVE 5.0 4.0 1.0 Q4 IG = 15 mA 3.0 MT2 POSITIVE 0.5 2.0 Q1 IG = 8 mA 1.0 Q3 IG = 8 mA00–40 –20 0 20 40 60 80 100 110 –40 –20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Holding Current versus Figure 6. Typical Latching Current versus Junction Temperature Junction Temperature (MAC6075B)

4 Motorola Thyristor Device Data IH , HOLDING CURRENT (mA) I T , INSTANTANEOUS ON–STATE CURRENT (AMPS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) IL , LATCHING CURRENT (mA) ZJC( t ) ° C/W TRANSIENT THERMAL RESISTANCE AVERAGE POWER P( A V ) DISSIPATION (WATTS), 8.0 0.9 0.8 6.0 Q4 0.7 Q3 4.0 0.6 Q3 Q2 Q1 Q2 Q4 Q1 0.5 2.0 0.4 0 0.3 –40 –20 0 20 40 60 80 100 110 –40 –20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Gate Trigger Current versus Figure 8. Typical Gate Trigger Voltage versus Junction Temperature Junction Temperature

24 30 RG–MT1 = 510 TJ = 110°C VPK = 400 V TJ = 100°C 22 25 20 20 500 V 110°C 18 15 120°C 600 V 16 10 100 200 300 400 500 600 700 800 900 1000 400 450 500 550 600 RGK, GATE–MT1 RESISTANCE (OHMS) VPK, PEAK VOLTAGE (VOLTS)

Figure 9. Typical Exponential Static dv/dt Figure 10. Typical Exponential Static dv/dt

versus Gate–MT1 Resistance, MT2(+) versus Peak Voltage, MT2(+) 30 11 RG–MT1 = 510 TJ = 110°C VPK = 400 V VPK = 400 V 25 10.5 20 500 V 10 500 V 600 V 15 9.5 600 V 10 9.0 100 105 110 115 120 100 200 300 400 500 600 700 800 900 1000 TJ, JUNCTION TEMPERATURE (°C) RGK, GATE–MT1 RESISTANCE (OHMS)

Figure 11. Typical Exponential Static dv/dt Figure 12. Typical Exponential Static dv/dt

versus Junction Temperature, MT2(+) versus Gate–MT1 Resistance, MT2(–)

Motorola Thyristor Device Data 5

STATIC dv/dt (V/uS) STATIC dv/dt (V/uS) IGT, GATE TRIGGER CURRENT (mA) STATIC dv/dt (V/uS) STATIC dv/dt (V/uS) VG T , GATE TRIGGER VOLTAGE (VOLTS), 16 16 RG–MT1 = 510 RG–MT1 = 510 14 14 TJ = 100°C 12 12 VPK = 400 V 10 110° 500VC10 600 V 8.0 8.0 120°C 6.0 6.0 400 450 500 550 600 100 105 110 115 120 VPK, PEAK VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 13. Typical Exponential Static dv/dt Figure 14. Typical Exponential Static dv/dt

versus Peak Voltage, MT2(–) versus Junction Temperature, MT2(–) 1.2 TJ = 110°C 100°C 90°C 1.1 GATE OPEN 1.0 0.9 0.8 tw f 10.7 2tw 6f ITM 200 V (didt)c 1000 0.6 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 (di/dt)c, CRITICAL RATE OF CHANGE COMMUTATING CURRENT (A/ms)

Figure 15. Critical Rate of Rise of Commutating Voltage

80 mHY 1N4007

LL

200 VRMS MEASURE ADJUST FOR I RS 56 ITM, 60 Hz VAC TRIGGER CHARGE C 0.1 F 200 V CHARGE CONTROL2SADJUST FOR dv/dt(c) 1N914 5115FNON–POLAR G

CL

NOTE: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.

Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage

6 Motorola Thyristor Device Data STATIC dv/dt (V/uS) (dv/dt)c, CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/us) TRIGGER CONTROL STATIC dv/dt (V/uS),

PACKAGE DIMENSIONS

–B–

UFCNOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Q Y14.5M, 1982.M 2. CONTROLLING DIMENSION: INCH.

–A– INCHES MILLIMETERS123DIM MIN MAX MIN MAX A 0.425 0.435 10.80 11.04 STYLE 5: B 0.295 0.305 7.50 7.74

H PIN 1. MT1C0.095 0.105 2.42 2.66 K 2. MT2D0.020 0.026 0.51 0.66

3. GATE F 0.115 0.130 2.93 3.30 G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41 J 0.015 0.025 0.39 0.63

VJK0.575 0.655 14.61 16.63

M 5 TYP 5 TYP

GRQ0.148 0.158 3.76 4.01

R 0.045 0.055 1.15 1.39

S 0.25 (0.010) MAMBMS0.025 0.035 0.64 0.88

U 0.145 0.155 3.69 3.93

D 2 PL V 0.040 ––– 1.02 –––

0.25 (0.010) MAMBM

CASE 77–08

(TO–225AA)

Motorola Thyristor Device Data 7

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 8 Motorola Thyristor Device Data ◊ MAC6071/D]
15

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