Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MAC4DHM/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC4DHM/D Silicon Bidirectional Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size Surface Mount DPAK Package • TRIACSPassivated Die for Reliability and Uniformity 4.0 AMPERES RMS • Four–Quadrant Triggering MT2 600 VOLTS • Blocking Voltage to 600 V • On–State Current Rating of 4.0 Amperes RMS at 93°C • Low Level Triggering and Holding Characteristics ORDERING INFORMATION G MT2 • To Obtain “DPAK...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MAC4DHM/D Silicon Bidirectional Thyristors
Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size Surface Mount DPAK Package • TRIACSPassivated Die for Reliability and Uniformity 4.0 AMPERES RMS • Four–Quadrant Triggering MT2 600 VOLTS • Blocking Voltage to 600 V • On–State Current Rating of 4.0 Amperes RMS at 93°C • Low Level Triggering and Holding Characteristics ORDERING INFORMATION G MT2 • To Obtain “DPAK” in Surface Mount Leadform (Case 369A) MT1 Shipped in Sleeves — No Suffix, i.e. MAC4DHM MT1 Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number, MT2 G i.e. MAC4DHMT4 • To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves — CASE 369A–13 STYLE 6 Add “–1” Suffix to Device Number, i.e. MAC4DHM–1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage (1) VDRM Volts (TJ = –40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC4DHM 600 MAC4DLM 600 On–State RMS Current IT(RMS) Amps (Full Cycle Sine Wave, 60 Hz, TC = 93°C) 4.0 Peak Non–Repetitive Surge Current ITSM (One Full Cycle, 60 Hz, TJ = 110°C) 40 Circuit Fusing Consideration (t = 8.3 msec) I2t 6.6 A2sec Peak Gate Power PGM Watts (Pulse Width ≤ 10 sec, TC = 93°C) 0.5 Average Gate Power PG(AV) (t = 8.3 msec, TC = 93°C) 0.1 Peak Gate Current (Pulse Width ≤ 10 sec, TC = 93°C) IGM 0.2 Amps Peak Gate Voltage (Pulse Width ≤ 10 sec, TC = 93°C) VGM 5.0 Volts Operating Junction Temperature Range TJ –40 to 110 °C Storage Temperature Range Tstg –40 to 150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance — Junction to Case RJC 3.5 °C/W Thermal Resistance — Junction to Ambient RJA 88 Thermal Resistance — Junction to Ambient (2) RJA 80 Maximum Lead Temperature for Soldering Purposes (3) TL 260 °C (1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. (2) Surface mounted on minimum recommended pad size. (3) 1/8″ from case for 10 seconds. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data 1 Motorola, Inc. 1997, ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Peak Repetitive Blocking Current IDRM mA (VD = Rated VDRM, Gate Open) TJ = 25°C — — 0.01 TJ = 110°C — — 2.0 Peak On–State Voltage (1) VTM Volts (ITM = ±6.0 A) — 1.3 1.6 Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) IGT mA MT2(+), G(+) MAC4DLM — 1.8 3.0 MT2(+), G(–) — 2.1 3.0 MT2(–), G(–) — 2.4 3.0 MT2(–), G(+) — 4.2 5.0 MT2(+), G(+) MAC4DHM — 1.8 5.0 MT2(+), G(–) — 2.1 5.0 MT2(–), G(–) — 2.4 5.0 MT2(–), G(+) — 4.2 10 Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) VGT Volts MT2(+), G(+) 0.5 0.62 1.3 MT2(+), G(–) 0.5 0.57 1.3 MT2(–), G(–) 0.5 0.65 1.3 MT2(–), G(+) 0.5 0.74 1.3 (VD = 12 V, RL = 10 K , TJ = 110°C) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–); MT2(–), G(+) 0.1 0.4 — Holding Current IH mA (VD = 12 V, Gate Open, IT = ±200 mA) — 1.5 15 Latching Current IL mA MT2(+), G(+) (VD = 12 V, IG = 5.0 mA) — 1.75 10 MT2(+), G(–) (VD = 12 V, IG = 5.0 mA) — 5.2 10 MT2(–), G(–) (VD = 12 V, IG = 5.0 mA) — 2.1 10 MT2(–), G(+) (VD = 12 V, IG = 10 mA) — 2.2 10 DYNAMIC CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Rate of Change of Commutating Current (1) di/dt(c) A/ms (VD = 200 V, ITM = 1.8 A, Commutating dv/dt = 1.0 V/sec, TJ = 110°C, — 3.0 — f = 250 Hz, CL = 5.0 fd, LL = 80 mH, RS = 56 , CS = 0.03 fd) See Figure 10 Critical Rate of Rise of Off–State Voltage dv/dt V/s (VD = 0.67 X Rated VDRM, Exponential Waveform, — 10 — Gate Open, TJ = 110°C) (1) Pulse test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. 2 Motorola Thyristor Device Data, 110 6.0 180° dc 5.0 α = 30° 120°105 α 60° 4.0 90° 90° = CONDUCTION ANGLE 100 3.0αα2.0 60° 95 120° = 30° = CONDUCTION ANGLE 1.0 180° dc 90000.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation
100 1.0 TYPICAL @ TJ = 25°C 10 MAXIMUM @ TJ = 110°C 0.1 ZJC(t) = RJC(t)r(t) 1.0 MAXIMUM @ TJ = 25°C 0.1 0.01 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1.0 10 100 1000 10 K VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)Figure 3. On–State Characteristics Figure 4. Transient Thermal Response
8.0 1.0 Q4 7.0 Q4 Q1 6.0 0.8 5.0 Q2 Q3 Q3 4.0 0.6 Q2 3.0 Q1 2.0 0.4 1.0 0 0.2 –40 –25 –10 5.0 20 35 50 65 80 95 110 –40 –25 –10 5.0 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)Figure 5. Typical Gate Trigger Current versus Figure 6. Typical Gate Trigger Voltage versus Junction Temperature Junction Temperature Motorola Thyristor Device Data 3
IGT, GATE TRIGGER CURRENT (mA) IT, INSTANTANEOUS ON–STATE CURRENT (AMPS) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) VGT, GATE TRIGGER VOLTAGE (VOLTS) r(t), TRANSIENT RESISTANCE (NORMALIZED) P(AV), AVERAGE POWER DISSIPATION (WATTS), 5.0 12 4.0 10 8.0 3.0 Q2 MT2 NEGATIVE 6.0 2.0 4.0 MT2 POSITIVE Q4 1.0 2.0 Q1 Q300–40 –25 –10 5.0 20 35 50 65 80 95 110 –40 –25 –10 5.0 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)Figure 7. Typical Holding Current versus Figure 8. Typical Latching Current versus Junction Temperature Junction Temperature
20 10 VD = 400 V VPK = 400 V MT2 POSITIVE TJ = 110°C MT2 NEGATIVE TJ = 110°C 100°C 90°C 10 1.0 5.0 f =tw 2 tw 6f I (di/dt) TMc = VDRM 1000 0 0.1 100 1000 10K01.0 2.0 3.0 4.0 5.0 6.0 RGK, GATE–MT1 RESISTANCE (OHMS) di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)Figure 9. Exponential Static dv/dt versus Figure 10. Critical Rate of Rise of Gate–MT1 Resistance, MT2(+) Commutating Voltage
4 Motorola Thyristor Device Data STATIC dv/dt (V/ s) IH, HOLDING CURRENT (mA) dv/dt(c), CRITICAL RATE OF RISE OF IL, LATCHING CURRENT (mA) COMMUTATING VOLTAGE (V/ s), 80 mHY 1N4007 200 VRMS LL ADJUST FOR MEASURE I , 60 HzVIRS 56 TM ACCHARGE TRIGGER
CHARGE CONTROL – 200 V CS 0.03 F + 2 ADJUST FOR 1N914 dv/dt(c) 5 F 51 NON-POLAR 1GCL
Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage Motorola Thyristor Device Data 5
TRIGGER CONTROL,PACKAGE DIMENSIONS
NOTES: –T– SEATING 1. DIMENSIONING AND TOLERANCING PER ANSIPLANE Y14.5M, 1982.B C 2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERSVREDIM MIN MAX MIN MAX
A 0.235 0.250 5.97 6.35 B 0.250 0.265 6.35 6.734C0.086 0.094 2.19 2.38Z D 0.027 0.035 0.69 0.88 A E 0.033 0.040 0.84 1.01 S F 0.037 0.047 0.94 1.19
123G0.180 BSC 4.58 BSCU H 0.034 0.040 0.87 1.01 K J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSCFJR0.175 0.215 4.45 5.46 L S 0.020 0.050 0.51 1.27H U 0.020 ––– 0.51 –––
V 0.030 0.050 0.77 1.27D 2 PL Z 0.138 ––– 3.51 ––– G 0.13 (0.005) M T
STYLE 6: PIN 1. MT1 2. MT2 3. GATECASE 369A–13 4. MT2 ISSUE Y
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