Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MAC4DCM/D Silicon Bidirectional Thyristors

Order this document SEMICONDUCTOR TECHNICAL DATA by MAC4DCM/D Silicon Bidirectional Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size Surface Mount DPAK Package • TRIACSPassivated Die for Reliability and Uniformity 4.0 AMPERES RMS • Blocking Voltage to 800 V MT2 600 thru 800 VOLTS • On–State Current Rating of 4.0 Amperes RMS at 108°C • High Immunity to dv/dt — 500 V/s at 125°C • High Immunity to di/dt — 6.0 A/ms at 125°C ORDERING INFORMATION G ...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MAC4DCM/D Silicon Bidirectional Thyristors

Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size Surface Mount DPAK Package • TRIACSPassivated Die for Reliability and Uniformity 4.0 AMPERES RMS • Blocking Voltage to 800 V MT2 600 thru 800 VOLTS • On–State Current Rating of 4.0 Amperes RMS at 108°C • High Immunity to dv/dt — 500 V/s at 125°C • High Immunity to di/dt — 6.0 A/ms at 125°C ORDERING INFORMATION G MT2 • To Obtain “DPAK” in Surface Mount Leadform (Case 369A) MT1 Shipped in Sleeves — No Suffix, i.e. MAC4DCN MT1 Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number, MT2 G i.e. MAC4DCNT4 • To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves — CASE 369A–13 STYLE 6 Add “–1” Suffix to Device Number, i.e. MAC4DCN–1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage (1) VDRM Volts (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC4DCM 600 MAC4DCN 800 On–State RMS Current IT(RMS) Amps (Full Cycle Sine Wave, 60 Hz, TC = 108°C) 4.0 Peak Non–Repetitive Surge Current ITSM (One Full Cycle, 60 Hz, TJ = 125°C) 40 Circuit Fusing Consideration (t = 8.3 msec) I2t 6.6 A2sec Peak Gate Power PGM Watts (Pulse Width ≤ 10 sec, TC = 108°C) 0.5 Average Gate Power PG(AV) (t = 8.3 msec, TC = 108°C) 0.1 Peak Gate Current (Pulse Width ≤ 10 sec, TC = 108°C) IGM 0.5 Amps Peak Gate Voltage (Pulse Width ≤ 10 sec, TC = 108°C) VGM 5.0 Volts Operating Junction Temperature Range TJ –40 to 125 °C Storage Temperature Range Tstg –40 to 150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance — Junction to Case RJC 3.5 °C/W Thermal Resistance — Junction to Ambient RJA 88 Thermal Resistance — Junction to Ambient (2) RJA 80 Maximum Lead Temperature for Soldering Purposes (3) TL 260 °C (1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. (2) Surface mounted on minimum recommended pad size. (3) 1/8″ from case for 10 seconds. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data 1 Motorola, Inc. 1997, ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Peak Repetitive Blocking Current IDRM mA (VD = Rated VDRM, Gate Open) TJ = 25°C — — 0.01 TJ = 125°C — — 2.0 Peak On–State Voltage (1) VTM Volts (ITM = ±6.0 A) — 1.3 1.6 Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) IGT mA MT2(+), G(+) 8.0 12 35 MT2(+), G(–) 8.0 18 35 MT2(–), G(–) 8.0 22 35 Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) VGT Volts MT2(+), G(+) 0.5 0.8 1.3 MT2(+), G(–) 0.5 0.8 1.3 MT2(–), G(–) 0.5 0.8 1.3 MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) TJ = 125°C 0.2 0.4 — Holding Current IH mA (VD = 12 V, Gate Open, IT = ±200 mA) 6.0 22 35 Latching Current (VD = 12 V, IG = 35 mA) IL mA MT2(+), G(+) — 30 60 MT2(+), G(–) — 50 80 MT2(–), G(–) — 20 60 DYNAMIC CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Rate of Change of Commutating Current (1) di/dt(c) A/ms (VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/sec, Gate Open, 6.0 8.4 — TJ = 125°C, f = 250 Hz, CL = 5.0 F, LL = 20 mH, No Snubber) See Figure 15 Critical Rate of Rise of Off–State Voltage dv/dt V/s (VD = 0.67 X Rated VDRM, Exponential Waveform, 500 1700 — Gate Open, TJ = 125°C) (1) Pulse test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. 2 Motorola Thyristor Device Data, 125 6.0 180° dc 5.0 120 = 30° α 120° α 60° 4.0 90° 90° = CONDUCTION ANGLE 115 3.0αα2.0 60° 110 120° = 30° = CONDUCTION ANGLE 1.0 180° dc 105000.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1.0 2.0 3.0 4.0 IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

100 1.0 TYPICAL @ TJ = 25°C MAXIMUM @ TJ = 125°C 0.1 MAXIMUM @ TJ = 25°C ZJC(t) = RJC(t)r(t) 1.0 0.1 0.01 0 1.0 2.0 3.0 4.0 5.0 0.1 1.0 10 100 1000 10 k VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3. On–State Characteristics Figure 4. Transient Thermal Response

60 1.2 50 1.0 Q2 Q1 40 0.8 Q3 30 0.6 Q2 Q3 20 0.4 Q1 10 0.200–50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Current versus Figure 6. Typical Gate Trigger Voltage versus Junction Temperature Junction Temperature Motorola Thyristor Device Data 3

IGT, GATE TRIGGER CURRENT (mA) IT, INSTANTANEOUS ON–STATE CURRENT (AMPS) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) VGT, GATE TRIGGER VOLTAGE(VOLTS) r(t), TRANSIENT RESISTANCE (NORMALIZED) P(AV), AVERAGE POWER DISSIPATION (WATTS), 60 120 50 100 Q2 40 MT2 POSITIVE 80 30 60 Q1 20 40 MT2 NEGATIVE Q3 10 2000–50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Holding Current versus Figure 8. Typical Latching Current versus Junction Temperature Junction Temperature

10 K 15 K TJ = 125°C TJ = 125°C 8.0 K VPK = 400 V 10 K 6.0 K 600 VVPK = 400 V 600 V 800 V 4.0 K 800 V 5.0 K 2.0K00100 1000 10 K 100 1000 10 K RGK, GATE–MT1 RESISTANCE (OHMS) RGK, GATE–MT1 RESISTANCE (OHMS)

Figure 9. Exponential Static dv/dt versus Figure 10. Exponential Static dv/dt versus Gate–MT1 Resistance, MT2(+) Gate–MT1 Resistance, MT2(–)

10 K 14 K 12 K 8.0 K TJ = 100°C GATE OPEN GATE OPEN 10 K TJ = 100°C 6.0 K 8.0 K 110°C 110°C 6.0 K 4.0 K 4.0 K 125°C 125°C 2.0 K 2.0K00400 500 600 700 800 400 500 600 700 800 VPK, PEAK VOLTAGE (VOLTS) VPK, PEAK VOLTAGE (VOLTS)

Figure 11. Exponential Static dv/dt versus Figure 12. Exponential Static dv/dt versus Peak Voltage, MT2(+) Peak Voltage, MT2(–)

4 Motorola Thyristor Device Data STATIC dv/dt (V/ s) STATIC dv/dt (V/ s) IH, HOLDING CURRENT (mA) STATIC dv/dt (V/ s) STATIC dv/dt (V/ s) IL, LATCHING CURRENT (mA), 10 K 14 K 12 K GATE OPEN 8.0 K GATE OPEN VPK = 400 V VPK = 400 V 10 K 6.0 K 8.0 K 600 V 600 V 4.0 K 6.0 K 800 V 800 V 4.0 K 2.0 K 2.0K00100 105 110 115 120 125 100 105 110 115 120 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 13. Typical Exponential Static dv/dt Figure 14. Typical Exponential Static dv/dt

versus Junction Temperature, MT2(+) versus Junction Temperature, MT2(–) VPK = 400 V TJ = 125°C 100°C 75°C f = tw 2 tw 6f I (di/dt) TMc = VDRM 1000 1.0 0 5.0 10 15 20 25 30 35 di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 15. Critical Rate of Rise of Commutating Voltage Motorola Thyristor Device Data 5

STATIC dv/dt (V/ s) dv/dt(c), CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ s) STATIC dv/dt (V/ s), LL 1N4007 200 VRMS ADJUST FOR MEASURE ITM, 60 Hz VAC I

CHARGE

TRIGGER – CHARGE CONTROL 400 V + 1N914 51 NON-POLAR CL G Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.

Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage

6 Motorola Thyristor Device Data TRIGGER CONTROL,

PACKAGE DIMENSIONS

NOTES: –T– SEATING 1. DIMENSIONING AND TOLERANCING PER ANSIPLANE Y14.5M, 1982.

B C 2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS

VREDIM MIN MAX MIN MAX

A 0.235 0.250 5.97 6.35 B 0.250 0.265 6.35 6.734C0.086 0.094 2.19 2.38

Z D 0.027 0.035 0.69 0.88 A E 0.033 0.040 0.84 1.01 S F 0.037 0.047 0.94 1.19

123G0.180 BSC 4.58 BSC

U H 0.034 0.040 0.87 1.01 K J 0.018 0.023 0.46 0.58

K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC

FJR0.175 0.215 4.45 5.46 L S 0.020 0.050 0.51 1.27H U 0.020 ––– 0.51 –––

V 0.030 0.050 0.77 1.27

D 2 PL Z 0.138 ––– 3.51 ––– G 0.13 (0.005) M T

STYLE 6: PIN 1. MT1 2. MT2 3. GATE

CASE 369A–13 4. MT2 ISSUE Y Motorola Thyristor Device Data 7

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps 8 ◊ Motorola Thyristor DMeAviCc4eD DCaMta/D]
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