Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MAC229AFP/D Silicon Bidirectional Triode Thyristors

Order this document SEMICONDUCTOR TECHNICAL DATA by MAC229AFP/D Silicon Bidirectional Triode Thyristors .designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. TRIACs • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability 8 AMPERES RMS • Small, Rugged, Thermowatt Construction for Low Thermal resistance and High 200 thru 800 VOLTS Heat Dissipation • Center Gate Geometry for Uniform Current Spreading • Gate Triggering Guaranteed...
Author: Gould Shared: 8/19/19
Downloads: 242 Views: 1033

Content

Order this document SEMICONDUCTOR TECHNICAL DATA by MAC229AFP/D Silicon Bidirectional Triode Thyristors

.designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. TRIACs • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability 8 AMPERES RMS • Small, Rugged, Thermowatt Construction for Low Thermal resistance and High 200 thru 800 VOLTS Heat Dissipation • Center Gate Geometry for Uniform Current Spreading • Gate Triggering Guaranteed in Three Modes (MAC229FP Series) or Four Modes (MAC229AFP Series) MT2 MT1

G

CASE 221C-02 STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Peak Repetitive Off-State Voltage(1) VDRM Volts (TJ = –40 to 110°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC229-4FP, MAC229A4FP 200 MAC229-6FP, MAC229A6FP 400 MAC229-8FP, MAC229A8FP 600 MAC229-10FP, MAC229A10FP 800 On-State RMS Current (TC = 80°C) IT(RMS) 8 Amps Full Cycle Sine Wave 50 to 60 Hz Peak Non-repetitive Surge Current ITSM 80 Amps (One Full Cycle 60 Hz, TJ = 110°C) Circuit Fusing I2t 26 A2s (t = 8.3 ms) Peak Gate Current (t 2 µs) IGM ±2 Amps Peak Gate Voltage (t 2 µs) VGM ±10 Volts Peak Gate Power (t 2 µs) PGM 20 Watts Average Gate Power PG(AV) 0.5 Watts (TC = 80°C, t 8.3 ms) Operating Junction Temperature Range TJ –40 to 110 °C Storage Temperature Range Tstg –40 to 150 °C Mounting Torque 8 in. lb. 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data 1 Motorola, Inc. 1995,

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2.2 °C/W Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit Peak Blocking Current(1) IDRM (VD = Rated VDRM, Open Gate) TJ = 25°C — — 10 µA TJ = 110°C — — 2 mA Peak On-State Voltage VTM — — 1.8 Volts (ITM = 11 A Peak, Pulse Width 2 ms, Duty Cycle 2%) Gate Trigger Current (Continuous dc) IGT mA MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) — — 5 MT2(–), G(+) “A” Suffix Only — — 10 Gate Trigger Voltage (Continuous dc) VGT Volts MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) — — 2 MT2(–), G(+) “A” Suffix Only — — 2.5 (VD = Rated VDRM, TC = 110°C, RL = 10 k) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) 0.2 — — MT2(–), G(+) “A” Suffix Only 0.2 — — Holding Current IH — — 15 mA (VD = 12 Vdc, ITM = 200 mA, Gate Open) Gate-Controlled Turn-On Time tgt — 1.5 — µs (VD = Rated VDRM, ITM = 16 A Peak, IG = 30 mA) Critical Rate of Rise of Off-State Voltage dv/dt — 25 — V/µs (VD = Rated VDRM, Exponential Waveform, TC = 110°C) Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5 — V/µs (VD = Rated VDRM, ITM = 11.3 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C) 1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage. 110 10 dc α = 30° α = 180° 104 8.0 α 60° 120° 90° α 90° 98 120° 6.0 1280° α = CONDUCTION ANGLE 60° TJ ≈ 110°C 30° 92 α 4.0 α 86 2.0 α = CONDUCTION ANGLE dc 80001.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP) 2 Motorola Thyristor Device Data TC , CASE TEMPERATURE ( ° C) P( A V ) , AVERAGE POWER (WATTS),

PACKAGE DIMENSIONS

–T– SEATING NOTES: –B– PLANE 1. DIMENSIONING AND TOLERANCING PER ANSIF C Y14.5M, 1982.

S 2. CONTROLLING DIMENSION: INCH.P N 3. LEAD DIMENSIONS UNCONTROLLED WITHINDIMENSION Z.

INCHES MILLIMETERS

E DIM MIN MAX MIN MAX

A 0.680 0.700 17.28 17.78

A B 0.388 0.408 9.86 10.36 Q STYLE 3:H C 0.175 0.195 4.45 4.95PIN 1. MT 1

123D0.025 0.040 0.64 1.012. MT2E0.340 0.355 8.64 9.01 –Y– 3. GATE F 0.140 0.150 3.56 3.81 G 0.100 BSC 2.54 BSC

K H 0.110 0.155 2.80 3.93

J 0.018 0.028 0.46 0.71

Z K 0.500 0.550 12.70 13.97

L 0.045 0.070 1.15 1.77

LJN0.049 ––– 1.25 –––

P 0.270 0.290 6.86 7.36

GRQ0.480 0.500 12.20 12.70 D R 0.090 0.120 2.29 3.043 PL S 0.105 0.115 2.67 2.92

0.25 (0.010) MBMYZ0.070 0.090 1.78 2.28

CASE 221C–02 Motorola Thyristor Device Data 3

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 Motorola Thyristor Device Data ◊ MAC229FP/D]
15

Similar documents

Order this document SEMICONDUCTOR TECHNICAL DATA by MAC229/D Silicon Bidirectional Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC229/D Silicon Bidirectional Triode Thyristors .designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. • A
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC228FP/D Silicon Bidirectional Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC228FP/D Silicon Bidirectional Triode Thyristors .designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. •
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC228/D Silicon Bidirectional Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC228/D Silicon Bidirectional Triode Thyristors .designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. • S
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC224/D Silicon Bidirectional 40 Amperes RMS Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC224/D Silicon Bidirectional 40 Amperes RMS Triode Thyristors .designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power supplies. TRIACs • Blocking Voltage to 800 Volts 40 AMPERE
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223FP/D Silicon Bidirectional Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223FP/D Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications, such as lighting systems, heater controls, motor controls and power supplies; or wherever full-wave silicon- ISOLATED TRIACs gate-controll
Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF2P03HD/D  Medium Power Surface Mount Products Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF2P03HD/D Medium Power Surface Mount Products Motorola Preferred Device DUAL TMOS MiniMOS devices are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola’s High Cell Density HDTMOS process. 2.0 AMPERES These miniature surfac
Order this document SEMICONDUCTOR TECHNICAL DATA by MLP2N06CL/D  SMARTDISCRETES  Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MLP2N06CL/D SMARTDISCRETES Motorola Preferred Device Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET VOLTAGE CLAMPED The MLP2N06CL is designed for applications that require a rugged power switching CURRENT LIMITING device w
Order this document SEMICONDUCTOR TECHNICAL DATA by MLP1N06CL/D SMARTDISCRETES  Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MLP1N06CL/D SMARTDISCRETES Internally Clamped, Current Limited Motorola Preferred Device N–Channel Logic Level Power MOSFET These SMARTDISCRETES devices feature current limiting for short circuit VOLTAGE CLAMPED protection, an integral gate–to–sou
Order this document SEMICONDUCTOR TECHNICAL DATA by MLD2N06CL/D  SMARTDISCRETES  Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MLD2N06CL/D SMARTDISCRETES Motorola Preferred Device Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET VOLTAGE CLAMPED The MLD2N06CL is designed for applications that require a rugged power switching CURRENT LIMITING device w
Order this document SEMICONDUCTOR TECHNICAL DATA by MKP3V110/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MKP3V110/D .designed for direct interface with the ac power line. Upon reaching the breakover *Motorola preferred devices voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like
Order this document SEMICONDUCTOR TECHNICAL DATA by MKP1V120/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MKP1V120/D .designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like an SCR until the main termin
Order this document SEMICONDUCTOR TECHNICAL DATA by MJL16218/D   NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MJL16218/D NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device The MJL16218 is a state–of–the–art SWITCHMODE bipolar power transistor. It is POWER TRANSISTOR specifically designed for use
ON Semiconductor SWITCHMODE MJE13007 NPN Bipolar Power Transistor For Switching Power Supply Applications • VCEO(sus) 400 V • Reverse Bias SOA with Inductive Loads @ TC = 100°C
ON Semiconductor SWITCHMODE MJE13007 NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly POWER TRANSISTOR suited for 115 and 220 V switchmode appl
Order this document SEMICONDUCTOR TECHNICAL DATA by MJ3281A/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MJ3281A/D " *Motorola Preferred Device ! 15 AMPERE The MJ3281A and MJ1302A are PowerBase power transistors for high power COMPLEMENTARY audio, disk head positioners and other linear applications. SILICON POWER TRANSISTORS • Designed for 100 W Audi
ON Semiconductor PNP MJ21193* Silicon Power Transistors NPN • Total Harmonic Distortion Characterized 16 AMPERE • High DC Current Gain – SILICON POWER
ON Semiconductor PNP MJ21193* Silicon Power Transistors NPN The MJ21193 and MJ21194 utilize Perforated Emitter technology MJ21194* and are specifically designed for high power audio output, disk head *ON Semiconductor Preferred Device positioners and linear applications. • Total Harmonic Distortion
Order this document SEMICONDUCTOR TECHNICAL DATA by MHW916/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MHW916/D The RF Line Designed specifically for the European Digital Extended Group Special Mobile (GSM) Base Station applications in the 925–960 MHz frequency range. MHW916 operates from a 26 Volt supply and requires 15.5 dBm of RF input power. • S
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B8A120A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B8A120A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output 8.0 AMP, 1200 VOLT inverter and brake transistor/diode in a single convenient package. T
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B30A60B/D Motorola Preferred Device Integrated Power Stage for 3.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B30A60B/D Motorola Preferred Device Integrated Power Stage for 3.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output inverter and brake transistor/diode in a single convenient package. The output 30 AMP, 6
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B20A60A/D Motorola Preferred Device Integrated Power Stage for 2.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B20A60A/D Motorola Preferred Device Integrated Power Stage for 2.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output 20 AMP, 600 VOLT inverter and brake transistor/diode in a single convenient package. The
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B16A120B/D Motorola Preferred Device Integrated Power Stage for 3.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B16A120B/D Motorola Preferred Device Integrated Power Stage for 3.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output 16 AMP, 1200 VOLT inverter and brake transistor/diode in a single convenient package. T
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B15A60A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B15A60A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives This module integrates a 3-phase input rectifier bridge, 3-phase output 15 AMP, 600 VOLT inverter and brake transistor/diode in a single convenient package. The
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B12A120A/D Motorola Preferred Device Integrated Power Stage for 2.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B12A120A/D Motorola Preferred Device Integrated Power Stage for 2.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output inverter and brake transistor/diode in a single convenient package. The output 12 AMP,
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A5S120DC3/D Integrated Power Stage for 1.0 hp Motorola Preferred Device 460 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A5S120DC3/D Integrated Power Stage for 1.0 hp Motorola Preferred Device 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 5.0 AMP, 1200 VOLT des
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A30E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A30E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 30 AMP, 600 VOLT designed for
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A25S120DC3/D Integrated Power Stage for 5.0 hp Motorola Preferred Device 460 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A25S120DC3/D Integrated Power Stage for 5.0 hp Motorola Preferred Device 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 25 AMP, 1200 VOLT des
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A20E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A20E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 20 AMP, 600 VOLT designed for
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A15S120DC3/D Integrated Power Stage for 3.0 hp Motorola Preferred Device 460 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A15S120DC3/D Integrated Power Stage for 3.0 hp Motorola Preferred Device 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 15 AMP, 1200 VOLT des
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A15A60A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A15A60A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives The MHPM7A15A60A module integrates a 3-phase input rectifier bridge, 15 AMP, 600 VOLT 3-phase output inverter, brake transistor/diode, current sense resistor an
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10S120DC3/D Integrated Power Stage for 2.0 hp Motorola Preferred Device 460 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10S120DC3/D Integrated Power Stage for 2.0 hp Motorola Preferred Device 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 10 AMP, 1200 VOLT des
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 10 AMP, 600 VOLT designed for