Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223FP/D Silicon Bidirectional Triode Thyristors

Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223FP/D Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications, such as lighting systems, heater controls, motor controls and power supplies; or wherever full-wave silicon- ISOLATED TRIACs gate-controlled devices are needed. THYRISTORS • Off-State Voltages to 800 Volts 25 AMPERES RMS • All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability 200 thru 800 VOLTS • Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat Dissipation • Gate Triggering Guaran...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223FP/D Silicon Bidirectional Triode Thyristors

.designed primarily for full-wave ac control applications, such as lighting systems, heater controls, motor controls and power supplies; or wherever full-wave silicon- ISOLATED TRIACs gate-controlled devices are needed. THYRISTORS • Off-State Voltages to 800 Volts 25 AMPERES RMS • All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability 200 thru 800 VOLTS • Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat Dissipation • Gate Triggering Guaranteed in Three Modes (MAC223FP Series) or Four Modes (MAC223AFP Series) MT2 MT1

G

CASE 221C-02 STYLE 3 MAXIMUM RATINGS (TJ = 25° unless otherwise noted.) Rating Symbol Value Unit Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C, VDRM Volts 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC223-4FP, MAC223A4FP 200 MAC223-6FP, MAC223A6FP 400 MAC223-8FP, MAC223A8FP 600 MAC223-10FP, MAC223A10FP 800 On-State RMS Current (TC = +80°C) Full Cycle Sine Wave 50 to 60 Hz(2) IT(RMS) 25 Amps Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C, ITSM 250 Amps preceded and followed by rated current) Circuit Fusing (t = 8.3 ms) I2t 260 A2s Peak Gate Power (t 2 µs) PGM 20 Watts Average Gate Power (TC = +80°C, t 8.3 ms) PG(AV) 0.5 Watt Peak Gate Current (t 2 µs) IGM 2 Amps Peak Gate Voltage (t 2 µs) VGM ±10 Volts RMS Isolation Voltage (TA = 25°C, Relative Humidity 20%) V(ISO) 1500 Volts Operating Junction Temperature TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C Mounting Torque — 8 in. lb. 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.2 °C/W Thermal Resistance, Case to Sink RθCS 2.2 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W Motorola Thyristor Device Data 1 Motorola, Inc. 1995,

ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit Peak Blocking Current(1) TJ = 25°C IDRM — — 10 µA (VD = Rated VDRM, Gate Open) TJ = 125°C — — 2 mA Peak On-State Voltage VTM — 1.4 1.85 Volts (ITM = 35 A Peak, Pulse Width 2 ms, Duty Cycle 2%) Gate Trigger Current (Continuous dc) IGT mA (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) — 20 50 MT2(–), G(+) “A” SUFFIX ONLY — 30 75 Gate Trigger Voltage (Continuous dc) VGT Volts (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(–), G(–); MT(+), G(–) — 1.1 2 MT2(–), G(+) “A” SUFFIX ONLY — 1.3 2.5 (VD = Rated VDRM, TJ = 125°C, RL = 10 k) 0.2 0.4 — MT(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY 0.2 0.4 — Holding Current IH — 10 50 mA (VD = 12 V, ITM = 200 mA, Gate Open) Gate Controlled Turn-On Time tgt — 1.5 — µs (VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA) Critical Rate of Rise of Off-State Voltage dv/dt — 40 — V/µs (VD = Rated VDRM, Exponential Waveform, TC = 125°C) Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5 — V/µs (VD = Rated VDRM, ITM = 35 A Peak, Commutating di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C) 1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage. 125 40 95 200510 15 20 250510 15 20 25 IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), RMS ON-STATE CURRENT (AMPS)

Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation

2 Motorola Thyristor Device Data TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) PD ( A V ) , AVERAGE POWER DISSIPATION (WATTS),

TYPICAL CHARACTERISTICS

3322VD = 12 V VD = 12 V RL = 100 Ω RL = 100Ω110.5 0.5 0.3 0.3 0.2 0.2 0.1 0.1 –60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Gate Trigger Current Figure 4. Gate Trigger Voltage

2 50ITM = 200 mA GATE OPEN TJ = 25°C 1 10 0.5 0.3 1 0.2 0.5 0.1 0.1 –60 –40 –20 0 20 40 60 80 100 120 14001234TJ, JUNCTION TEMPERATURE (°C) vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 5. Hold Current Figure 6. Typical On-State Characteristics Motorola Thyristor Device Data 3

NORMALIZED HOLD CURRENT NORMALIZED GATE CURRENTiTM, INSTANTANEOUS ON-STATE CURRENT (AMPS) NORMALIZED GATE VOLTAGE,

PACKAGE DIMENSIONS

–T– SEATING NOTES: –B– PLANE 1. DIMENSIONING AND TOLERANCING PER ANSIF C Y14.5M, 1982.

S 2. CONTROLLING DIMENSION: INCH.P N 3. LEAD DIMENSIONS UNCONTROLLED WITHINDIMENSION Z.

INCHES MILLIMETERS

E DIM MIN MAX MIN MAX

A 0.680 0.700 17.28 17.78

A B 0.388 0.408 9.86 10.36 HQC0.175 0.195 4.45 4.95STYLE 3:

123D0.025 0.040 0.64 1.01PIN 1. MT1E0.340 0.355 8.64 9.01 –Y– 2. MT2F0.140 0.150 3.56 3.813. GATE G 0.100 BSC 2.54 BSC

K H 0.110 0.155 2.80 3.93

J 0.018 0.028 0.46 0.71

Z K 0.500 0.550 12.70 13.97

L 0.045 0.070 1.15 1.77

LJN0.049 ––– 1.25 –––

P 0.270 0.290 6.86 7.36

GRQ0.480 0.500 12.20 12.70 D R 0.090 0.120 2.29 3.043 PL S 0.105 0.115 2.67 2.92

0.25 (0.010) MBMYZ0.070 0.090 1.78 2.28

CASE 221C-02

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 Motorola Thyristor Device Data ◊ MAC223FP/D]
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