Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF2P03HD/D Medium Power Surface Mount Products Motorola Preferred Device

Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF2P03HD/D Medium Power Surface Mount Products Motorola Preferred Device DUAL TMOS MiniMOS devices are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola’s High Cell Density HDTMOS process. 2.0 AMPERES These miniature surface mount MOSFETs feature ultra low RDS(on) 30 VOLTS and true logic level performance. They are capable of withstanding RDS(on) = 0.200 OHM high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in lo...
Author: Florian Hartmann Shared: 8/19/19
Downloads: 704 Views: 2562

Content

Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF2P03HD/D Medium Power Surface Mount Products Motorola Preferred Device

DUAL TMOS MiniMOS devices are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola’s High Cell Density HDTMOS process. 2.0 AMPERES These miniature surface mount MOSFETs feature ultra low RDS(on) 30 VOLTS and true logic level performance. They are capable of withstanding RDS(on) = 0.200 OHM high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, D printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk CASE 751–05, Style 11 drives and tape drives. The avalanche energy is specified to SO–8 eliminate the guesswork in designs where inductive loads are G switched and offer additional safety margin against unexpected voltage transients. S • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Source–118Drain–1 • Logic Level Gate Drive — Can Be Driven by Logic ICs Gate–127Drain–1 • Miniature SO–8 Surface Mount Package — Saves Board Space Source–236Drain–2 • Diode Is Characterized for Use In Bridge Circuits Gate–245Drain–2 • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature Top View • Avalanche Energy Specified • Mounting Information for SO–8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 30 Vdc Drain–to–Gate Voltage (RGS = 1.0 MΩ) VDGR 30 Vdc Gate–to–Source Voltage — Continuous VGS ± 20 Vdc Drain Current — Continuous @ TA = 25°C ID 3.0 Adc Drain Current — Continuous @ TA = 100°C ID 1.9 Drain Current — Single Pulse (tp ≤ 10 µs) IDM 15 Apk Total Power Dissipation @ TC = 25°C (2) PD 2.0 Watts Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C EAS 324 mJ (VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 6.0 Apk, L = 18 mH, RG = 25 Ω) Thermal Resistance — Junction to Ambient (2) RθJA 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C DEVICE MARKING D2P03 (1) Negative sign for P–Channel device omitted for clarity. (2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max. ORDERING INFORMATION Device Reel Size Tape Width Quantity MMDF2P03HDR2 13″ 12 mm embossed tape 2500 units Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. REV6MMoottoororolal,a In Tc.M 19O9S6 Power MOSFET Transistor Device Data 1, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)(1) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage V(BR)DSS Vdc (VGS = 0 Vdc, ID = 250 µAdc) 30 — — Temperature Coefficient (Positive) — 27 — mV/°C Zero Gate Voltage Drain Current IDSS µAdc (VDS = 30 Vdc, VGS = 0 Vdc) — — 1.0 (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) — — 10 Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — 100 nAdc ON CHARACTERISTICS(2) Gate Threshold Voltage VGS(th) Vdc (VDS = VGS, ID = 250 µAdc) 1.0 1.5 2.0 Temperature Coefficient (Negative) — 4.0 — mV/°C Static Drain–to–Source On–Resistance RDS(on) Ohm (VGS = 10 Vdc, ID = 2.0 Adc) — 0.170 0.200 (VGS = 4.5 Vdc, ID = 1.0 Adc) — 0.225 0.300 Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc) gFS 2.0 3.4 — mhos DYNAMIC CHARACTERISTICS Input Capacitance Ciss — 397 550 pF Output Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, C — 189 250 f = 1.0 MHz) oss Transfer Capacitance Crss — 64 126 SWITCHING CHARACTERISTICS(3) Turn–On Delay Time td(on) — 16.25 33 ns Rise Time (VDD = 15 Vdc, ID = 2.0 Adc, tr — 17.5 35 VGS = 4.5 Vdc, Turn–Off Delay Time RG = 6.0 Ω) td(off) — 62.5 125 Fall Time tf — 194 390 Turn–On Delay Time td(on) — 9.0 18 Rise Time (VDD = 15 Vdc, ID = 2.0 Adc, tr — 10 20 VGS = 10 Vdc, Turn–Off Delay Time RG = 6.0 Ω) td(off) — 81 162 Fall Time tf — 192 384 Gate Charge QT — 14.2 19 nC See Figure 8 (VDS = 24 Vdc, ID = 2.0 Adc, Q1 — 1.1 — VGS = 10 Vdc) Q2 — 4.5 — Q3 — 3.5 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage(2) (IS = 2.0 Adc, VGS = 0 Vdc) VSD — 1.82 2.0 Vdc (IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C) — 1.36 — Reverse Recovery Time trr — 42.3 — ns See Figure 15 (IS = 2.0 Adc, V = 0 Vdc, ta — 15.6 —GS dIS/dt = 100 A/µs) tb — 26.7 — Reverse Recovery Stored Charge QRR — 0.044 — µC (1) Negative sign for P–Channel device omitted for clarity. (2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (3) Switching characteristics are independent of operating junction temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data,

TYPICAL ELECTRICAL CHARACTERISTICS

44V= 10 V 4.5 V 3.7 V TJ = 25°CGS 3.5 V VDS ≥ 10V333.9 V 3.3V23.1V2TJ = 100°C 2.9 V 25°C112.7 V 2.5 V – 55°C0000.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics

0.6 0.30 ID = 1 A TJ = 25°C TJ = 25°C 0.5 0.25 0.4 VGS = 4.5 V 0.3 0.20 10 V 0.2 0.15 0.1 0 0.10012345678910 0 0.5 1 1.5 2 2.5 3 3.5 4 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Figure 4. On–Resistance versus Drain Current Gate–to–Source Voltage and Gate Voltage

1.6 1000 VGS = 10 V VGS = 0 V ID = 2 A 1.4 1.2 100 TJ = 125°C 1.0 100°C 0.8 0.6 – 50 – 25 0 25 50 75 100 125 150 10 0 10 20 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 5. On–Resistance Variation with Figure 6. Drain–To–Source Leakage Temperature Current versus Voltage Motorola TMOS Power MOSFET Transistor Device Data 3

RDS(on), DRAIN–TO–SOURCE RESISTANCE RDS(on), DRAIN–TO–SOURCE RESISTANCE (OHMS) I D , DRAIN CURRENT (AMPS) (NORMALIZED) I , LEAKAGE (nA) RDS(on), DRAIN–TO–SOURCE RESISTANCE (OHMS)DSSID, DRAIN CURRENT (AMPS), POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted The capacitance (Ciss) is read from the capacitance curve at by recognizing that the power MOSFET is charge controlled. a voltage corresponding to the off–state condition when cal- The lengths of various switching intervals (∆t) are deter- culating td(on) and is read at a voltage corresponding to the mined by how fast the FET input capacitance can be charged on–state when calculating td(off). by current from the generator. The published capacitance data is difficult to use for calculat- At high switching speeds, parasitic circuit elements com- ing rise and fall because drain–gate capacitance varies plicate the analysis. The inductance of the MOSFET source greatly with applied voltage. Accordingly, gate charge data is lead, inside the package and in the circuit wiring which is used. In most cases, a satisfactory estimate of average input common to both the drain and gate current paths, produces a current (IG(AV)) can be made from a rudimentary analysis of voltage at the source which reduces the gate drive current. the drive circuit so that The voltage is determined by Ldi/dt, but since di/dt is a func- t = Q/I tion of drain current, the mathematical solution is complex.G(AV) The MOSFET output capacitance also complicates the During the rise and fall time interval when switching a resis- mathematics. And finally, MOSFETs have finite internal gate tive load, VGS remains virtually constant at a level known as resistance which effectively adds to the resistance of the the plateau voltage, VSGP. Therefore, rise and fall times may driving source, but the internal resistance is difficult to mea- be approximated by the following: sure and, consequently, is not specified. tr = Q2 x RG/(VGG – VGSP) The resistive switching time variation versus gate resis- tf = Q2 x RG/VGSP tance (Figure 9) shows how typical switching performance is where affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a VGG = the gate drive voltage, which varies from zero to VGG value of unity regardless of the switching speed. The circuit RG = the gate drive resistance used to obtain the data is constructed to minimize common and Q2 and VGSP are read from the gate charge curve. inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most During the turn–on and turn–off delay times, gate current is power electronic loads are inductive; the data in the figure is not constant. The simplest calculation uses appropriate val- ues from the capacitance curves in a standard equation for taken with a resistive load, which approximates an optimally voltage change in an RC network. The equations are: snubbed inductive load. Power MOSFETs may be safely op- erated into an inductive load; however, snubbing reduces td(on) = RG Ciss In [VGG/(VGG – VGSP)] switching losses. td(off) = RG Ciss In (VGG/VGSP) VDS = 0 V VGS = 0 V TJ = 25°C

C

1000 iss 600 Crss Ciss Coss 200 Crss 1050510 15 20 25 30 VGS VDS GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (Volts) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data C, CAPACITANCE (pF), 12 24 1000 QT VDD = 15 V 10 20 ID = 2AVVGS = 10 VGS tfT = 25°C 8 VDS 16 100

J

td(off) 6 ID = 2 A 12 Q1 Q2 TJ = 25°C tr4810 td(on) 2 4 Q30010246810 12 14 16 1 10 100 QT, TOTAL CHARGE (nC) RG, GATE RESISTANCE (OHMS) Figure 8. Gate–To–Source and Drain–To–Source Figure 9. Resistive Switching Time Voltage versus Total Charge Variation versus Gate Resistance

DRAIN–TO–SOURCE DIODE CHARACTERISTICS

The switching characteristics of a MOSFET body diode di/dts. The diode’s negative di/dt during ta is directly con- are very important in systems using it as a freewheeling or trolled by the device clearing the stored charge. However, commutating diode. Of particular interest are the reverse re- the positive di/dt during tb is an uncontrollable diode charac- covery characteristics which play a major role in determining teristic and is usually the culprit that induces current ringing. switching losses, radiated noise, EMI and RFI. Therefore, when comparing diodes, the ratio of tb/ta serves System switching losses are largely due to the nature of as a good indicator of recovery abruptness and thus gives a the body diode itself. The body diode is a minority carrier de- comparative estimate of probable noise generated. A ratio of vice, therefore it has a finite reverse recovery time, trr, due to 1 is considered ideal and values less than 0.5 are considered the storage of minority carrier charge, QRR, as shown in the snappy. typical reverse recovery wave form of Figure 15. It is this Compared to Motorola standard cell density low voltage stored charge that, when cleared from the diode, passes through a potential and defines an energy loss. Obviously, MOSFETs, high cell density MOSFET diodes are faster repeatedly forcing the diode through reverse recovery further (shorter trr), have less stored charge and a softer reverse re- increases switching losses. Therefore, one would like a covery characteristic. The softness advantage of the high diode with short trr and low QRR specifications to minimize cell density diode means they can be forced through reverse these losses. recovery at a higher di/dt than a standard cell MOSFET The abruptness of diode reverse recovery effects the diode without increasing the current ringing or the noise gen- amount of radiated noise, voltage spikes, and current ring- erated. In addition, power dissipation incurred from switching ing. The mechanisms at work are finite irremovable circuit the diode will be less due to the shorter recovery time and parasitic inductances and capacitances acted upon by high lower switching losses. TJ = 25°C VGS = 0 V 1.6 1.2 0.8 0.4 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current Motorola TMOS Power MOSFET Transistor Device Data 5 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) IS, SOURCE CURRENT (AMPS) t, TIME (ns) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS), di/dt = 300 A/µs Standard Cell Density trr High Cell Density trr tb ta t, TIME Figure 11. Reverse Recovery Time (trr)

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curves define able operation, the stored energy from circuit inductance dis- the maximum simultaneous drain–to–source voltage and sipated in the transistor while in avalanche must be less than drain current that a transistor can handle safely when it is for- the rated limit and must be adjusted for operating conditions ward biased. Curves are based upon maximum peak junc- differing from those specified. Although industry practice is to tion temperature and a case temperature (TC) of 25°C. Peak rate in terms of energy, avalanche energy capability is not a repetitive pulsed power limits are determined by using the constant. The energy rating decreases non–linearly with an thermal response data in conjunction with the procedures increase of peak current in avalanche and peak junction tem- discussed in AN569, “Transient Thermal Resistance – Gen- perature. eral Data and Its Use.” Switching between the off–state and the on–state may tra- Although many E–FETs can withstand the stress of drain– verse any load line provided neither rated peak current (I ) to–source avalanche at currents up to rated pulsed currentDM nor rated voltage (V ) is exceeded, and that the transition (IDM), the energy rating is specified at rated continuous cur-DSS time (tr, tf) does not exceed 10 µs. In addition the total power rent (ID), in accordance with industry custom. The energy rat- averaged over a complete switching cycle must not exceed ing must be derated for temperature as shown in the (TJ(MAX) – TC)/(RθJC). accompanying graph (Figure 13). Maximum energy at cur- A power MOSFET designated E–FET can be safely used rents below rated continuous ID can safely be assumed to in switching circuits with unclamped inductive loads. For reli- equal the values indicated. 100 350 V = 20 V Mounted on 2” sq. FR4 board (1” sq. 2 oz. Cu 0.06”GS ID = 6 A SINGLE PULSE thick single sided) with one die operating, 10s max. 300 TC = 25°C 10 100 µs 250 1 ms 10 ms 200 dc 150 0.1 RDS(on) LIMIT THERMAL LIMIT 50 PACKAGE LIMIT 0.01 0 0.1 1 10 100 25 50 75 100 125 150 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Rated Forward Biased Figure 13. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature 6 Motorola TMOS Power MOSFET Transistor Device Data I D, DRAIN CURRENT (AMPS) I S, SOURCE CURRENT EAS, SINGLE PULSE DRAIN–TO–SOURCE AVALANCHE ENERGY (mJ),

TYPICAL ELECTRICAL CHARACTERISTICS

1 D = 0.5 0.2 0.1 0.1 0.05 Normalized to θja at 10s. 0.02 Chip 0.0175 Ω 0.0710 Ω 0.2706 Ω 0.5776 Ω 0.7086 Ω 0.01 0.01 0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F SINGLE PULSE Ambient 0.001 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 t, TIME (s)

Figure 14. Thermal Response

di/dt

IS

trr ta tb

TIME

tp 0.25 IS

IS Figure 15. Diode Reverse Recovery Waveform Motorola TMOS Power MOSFET Transistor Device Data 7

Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE,

INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total between the board and the package. With the correct pad design. The footprint for the semiconductor packages must be geometry, the packages will self–align when subjected to a the correct size to ensure proper solder connection interface solder reflow process. 0.060 1.52 0.275 0.155 7.0 4.0 0.024 0.050 0.6 1.270 inches mm SO–8 POWER DISSIPATION The power dissipation of the SO–8 is a function of the input the equation for an ambient temperature TA of 25°C, one can pad size. This can vary from the minimum pad size for calculate the power dissipation of the device which in this case soldering to the pad size given for maximum power is 2.0 Watts. dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the P = 150°C – 25°C D = 2.0 Watts device junction to ambient; and the operating temperature, TA. 62.5°C/W Using the values provided on the data sheet for the SO–8 package, PD can be calculated as follows: The 62.5°C/W for the SO–8 package assumes the recommended footprint on a glass epoxy printed circuit board

T

P = J(max) – TA D to achieve a power dissipation of 2.0 Watts using the footprint RθJA shown. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. The values for the equation are found in the maximum Using board material such as Thermal Clad, the power ratings table on the data sheet. Substituting these values into dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated • The soldering temperature and time shall not exceed temperature of the device. When the entire device is heated 260°C for more than 10 seconds. to a high temperature, failure to complete soldering within a • When shifting from preheating to soldering, the maximum short time could result in device failure. Therefore, the temperature gradient shall be 5°C or less. following items should always be observed in order to • After soldering has been completed, the device should be minimize the thermal stress to which the devices are allowed to cool naturally for at least three minutes. subjected. Gradual cooling should be used as the use of forced • Always preheat the device. cooling will increase the temperature gradient and result • The delta temperature between the preheat and soldering in latent failure due to mechanical stress. should be 100°C or less.* • Mechanical stress or shock should not be applied during • When preheating and soldering, the temperature of the cooling. leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When * Soldering a device without preheating can cause excessive using infrared heating with the reflow soldering method, thermal shock and stress which can result in damage to the the difference shall be a maximum of 10°C. device. 8 Motorola TMOS Power MOSFET Transistor Device Data,

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of control line on the graph shows the actual temperature that might be settings that will give the desired heat pattern. The operator experienced on the surface of a test board at or near a central must set temperatures for several heating zones and a figure solder joint. The two profiles are based on a high density and for belt speed. Taken together, these control settings make up a low density board. The Vitronics SMD310 convection/in- a heating “profile” for that particular circuit board. On frared reflow soldering system was used to generate this machines controlled by a computer, the computer remembers profile. The type of solder used was 62/36/2 Tin Lead Silver these profiles from one operating session to the next. Figure with a melting point between 177–189°C. When this type of 16 shows a typical heating profile for use when soldering a furnace is used for solder reflow work, the circuit boards and surface mount device to a printed circuit board. This profile will solder joints tend to heat first. The components on the board vary among soldering systems, but it is a good starting point. are then heated by conduction. The circuit board, because it Factors that can affect the profile include the type of soldering has a large surface area, absorbs the thermal energy more system in use, density and types of components on the board, efficiently, then distributes this energy to the components. type of solder used, and the type of board or substrate material Because of this effect, the main body of a component may be being used. This profile shows temperature versus time. The up to 30 degrees cooler than the adjacent solder joints. STEP 1 STEP 2 STEP 3 STEP 4 STEP 5 STEP 6 STEP 7 PREHEAT VENT HEATING HEATING HEATING VENT COOLING ZONE 1 “SOAK” ZONES 2 & 5 ZONES 3 & 6 ZONES 4 & 7 “RAMP” “RAMP” “SOAK” “SPIKE” 205° TO 219°C 200°C PEAK AT DESIRED CURVE FOR HIGH 170°C SOLDER JOINT MASS ASSEMBLIES 160°C 150°C 150°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS 100°C 140°C (DEPENDING ON 100°C MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 16. Typical Solder Heating Profile Motorola TMOS Power MOSFET Transistor Device Data 9,

PACKAGE DIMENSIONS

–A– J NOTES:1. DIMENSIONS A AND B ARE DATUMS AND T IS A DATUM SURFACE. 2. DIMENSIONING AND TOLERANCING PER ANSI85Y14.5M, 1982. 3. DIMENSIONS ARE IN MILLIMETER. 4. DIMENSION A AND B DO NOT INCLUDE MOLD –B– PROTRUSION. 1 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 4 6. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS

M OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. G MILLIMETERS

DIM MIN MAX A 4.80 5.00 B 3.80 4.00 C 1.35 1.75 –T– SEATING D 0.35 0.49 PLANE F 0.40 1.25 8XDG1.27 BSC J 0.18 0.25 0.25 (0.010) MTBSASK0.10 0.25M07P5.80 6.20 R 0.25 0.50 STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2

CASE 751–05 4. GATE 2 SO–8 5. DRAIN 26. DRAIN 2 ISSUE P 7. DRAIN 1

8. DRAIN 1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 ◊ MMDF2P03HD/D 10 Motorola T MO S Power MOS FET Transistor Device Data

K

4X P

C

0.25 (0.010) MBM

R X 45 F

]
15

Similar documents

Order this document SEMICONDUCTOR TECHNICAL DATA by MLP2N06CL/D  SMARTDISCRETES  Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MLP2N06CL/D SMARTDISCRETES Motorola Preferred Device Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET VOLTAGE CLAMPED The MLP2N06CL is designed for applications that require a rugged power switching CURRENT LIMITING device w
Order this document SEMICONDUCTOR TECHNICAL DATA by MLP1N06CL/D SMARTDISCRETES  Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MLP1N06CL/D SMARTDISCRETES Internally Clamped, Current Limited Motorola Preferred Device N–Channel Logic Level Power MOSFET These SMARTDISCRETES devices feature current limiting for short circuit VOLTAGE CLAMPED protection, an integral gate–to–sou
Order this document SEMICONDUCTOR TECHNICAL DATA by MLD2N06CL/D  SMARTDISCRETES  Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MLD2N06CL/D SMARTDISCRETES Motorola Preferred Device Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET VOLTAGE CLAMPED The MLD2N06CL is designed for applications that require a rugged power switching CURRENT LIMITING device w
Order this document SEMICONDUCTOR TECHNICAL DATA by MKP3V110/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MKP3V110/D .designed for direct interface with the ac power line. Upon reaching the breakover *Motorola preferred devices voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like
Order this document SEMICONDUCTOR TECHNICAL DATA by MKP1V120/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MKP1V120/D .designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like an SCR until the main termin
Order this document SEMICONDUCTOR TECHNICAL DATA by MJL16218/D   NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MJL16218/D NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device The MJL16218 is a state–of–the–art SWITCHMODE bipolar power transistor. It is POWER TRANSISTOR specifically designed for use
ON Semiconductor SWITCHMODE MJE13007 NPN Bipolar Power Transistor For Switching Power Supply Applications • VCEO(sus) 400 V • Reverse Bias SOA with Inductive Loads @ TC = 100°C
ON Semiconductor SWITCHMODE MJE13007 NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly POWER TRANSISTOR suited for 115 and 220 V switchmode appl
Order this document SEMICONDUCTOR TECHNICAL DATA by MJ3281A/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MJ3281A/D " *Motorola Preferred Device ! 15 AMPERE The MJ3281A and MJ1302A are PowerBase power transistors for high power COMPLEMENTARY audio, disk head positioners and other linear applications. SILICON POWER TRANSISTORS • Designed for 100 W Audi
ON Semiconductor PNP MJ21193* Silicon Power Transistors NPN • Total Harmonic Distortion Characterized 16 AMPERE • High DC Current Gain – SILICON POWER
ON Semiconductor PNP MJ21193* Silicon Power Transistors NPN The MJ21193 and MJ21194 utilize Perforated Emitter technology MJ21194* and are specifically designed for high power audio output, disk head *ON Semiconductor Preferred Device positioners and linear applications. • Total Harmonic Distortion
Order this document SEMICONDUCTOR TECHNICAL DATA by MHW916/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MHW916/D The RF Line Designed specifically for the European Digital Extended Group Special Mobile (GSM) Base Station applications in the 925–960 MHz frequency range. MHW916 operates from a 26 Volt supply and requires 15.5 dBm of RF input power. • S
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B8A120A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B8A120A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output 8.0 AMP, 1200 VOLT inverter and brake transistor/diode in a single convenient package. T
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B30A60B/D Motorola Preferred Device Integrated Power Stage for 3.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B30A60B/D Motorola Preferred Device Integrated Power Stage for 3.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output inverter and brake transistor/diode in a single convenient package. The output 30 AMP, 6
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B20A60A/D Motorola Preferred Device Integrated Power Stage for 2.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B20A60A/D Motorola Preferred Device Integrated Power Stage for 2.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output 20 AMP, 600 VOLT inverter and brake transistor/diode in a single convenient package. The
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B16A120B/D Motorola Preferred Device Integrated Power Stage for 3.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B16A120B/D Motorola Preferred Device Integrated Power Stage for 3.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output 16 AMP, 1200 VOLT inverter and brake transistor/diode in a single convenient package. T
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B15A60A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B15A60A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives This module integrates a 3-phase input rectifier bridge, 3-phase output 15 AMP, 600 VOLT inverter and brake transistor/diode in a single convenient package. The
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B12A120A/D Motorola Preferred Device Integrated Power Stage for 2.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B12A120A/D Motorola Preferred Device Integrated Power Stage for 2.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output inverter and brake transistor/diode in a single convenient package. The output 12 AMP,
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A5S120DC3/D Integrated Power Stage for 1.0 hp Motorola Preferred Device 460 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A5S120DC3/D Integrated Power Stage for 1.0 hp Motorola Preferred Device 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 5.0 AMP, 1200 VOLT des
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A30E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A30E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 30 AMP, 600 VOLT designed for
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A25S120DC3/D Integrated Power Stage for 5.0 hp Motorola Preferred Device 460 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A25S120DC3/D Integrated Power Stage for 5.0 hp Motorola Preferred Device 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 25 AMP, 1200 VOLT des
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A20E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A20E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 20 AMP, 600 VOLT designed for
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A15S120DC3/D Integrated Power Stage for 3.0 hp Motorola Preferred Device 460 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A15S120DC3/D Integrated Power Stage for 3.0 hp Motorola Preferred Device 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 15 AMP, 1200 VOLT des
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A15A60A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A15A60A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives The MHPM7A15A60A module integrates a 3-phase input rectifier bridge, 15 AMP, 600 VOLT 3-phase output inverter, brake transistor/diode, current sense resistor an
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10S120DC3/D Integrated Power Stage for 2.0 hp Motorola Preferred Device 460 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10S120DC3/D Integrated Power Stage for 2.0 hp Motorola Preferred Device 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 10 AMP, 1200 VOLT des
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 10 AMP, 600 VOLT designed for
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B5A120D/D Integrated Power Stage for 460 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B5A120D/D Integrated Power Stage Motorola Preferred Devices for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 1.0, 2.0 and 3.0 hp motor drive applications. The inverter 5.
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B20E60D3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B20E60D3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drives This module integrates a 3–phase inverter and 3–phase rectifier in a single convenient package. It is designed for 2.0 hp motor drive 20 AMP, 600 VOLT applica
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10N120/D Integrated Power Stage for 460 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10N120/D Integrated Power Stage for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp motor drive applications. The inverter incorporates advanced Motoro
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B15E60D3/D Integrated Power Stage for 230 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B15E60D3/D Integrated Power Stage for 230 VAC Motor Drives Motorola Preferred Devices These modules integrate a 3–phase inverter and 3–phase rectifier in a single convenient package. They are designed for 0.5, 1.0, and 1.5 hp motor drive appli
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10A60D/D Motorola Preferred Devices Integrated Power Stage for 230 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10A60D/D Motorola Preferred Devices Integrated Power Stage for 230 VAC Motor Drives 10, 20 AMP, 600 V These modules integrate a 3–phase inverter in a single convenient package. HYBRID POWER MODULES They are designed for 1.0 and 2.0 hp motor d
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60/D  N–Channel Enhancement–Mode Silicon Gate
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60/D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO–264 termination scheme to provide an enhanced and reliable high 40 A @ 90°C voltage–blocking cap