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Order this document SEMICONDUCTOR TECHNICAL DATA by MKP3V110/D .designed for direct interface with the ac power line. Upon reaching the breakover *Motorola preferred devices voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like an SCR until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current SIDACs capability at low cost. Glass passivation insures reliable operation. Applications are: 1 AMPERE RMS • High Pressure Sodium Vapor Lighting 100 thru 135 VOLTS • St...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MKP3V110/D

.designed for direct interface with the ac power line. Upon reaching the breakover *Motorola preferred devices voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like an SCR until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current SIDACs capability at low cost. Glass passivation insures reliable operation. Applications are: 1 AMPERE RMS • High Pressure Sodium Vapor Lighting 100 thru 135 VOLTS • Strobes and Flashers • Ignitors • High Voltage Regulators • Pulse Generators MT1 MT2 CASE 267-03 SURMETIC 50 PLASTIC AXIAL MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Min Max Unit Repetitive Breakover Voltage V(BO) Volts MKP3V110 100 120 MKP3V120 110 130 MKP3V130 120 140 Off-State Repetitive Voltage VDRM — ±90 Volts On-State RMS Current IT(RMS) — 1 Amp On-State Surge Current (Non-repetitive) ITSM — 20 Amps (60 Hz One Cycle Sine Wave, Peak Value) Operating Junction Temperature Range TJ –40 +125 °C Storage Temperature Range Tstg –40 +150 °C Lead Solder Temperature — — +230 °C (Lead Length ≥ 1/16″ from Case, 10 s Max) THERMAL CHARACTERISTICS Characteristic Symbol Min Max Unit Thermal Resistance, Junction to Lead RθJL — 15 °C/W (Lead Length = 3/8″) Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data 1 Motorola, Inc. 1995,

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; both directions)

Characteristic Symbol Min Typ Max Unit Breakover Current I(BO) — — 200 µA Repetitive Peak Off-State Current IDRM — — 10 µA (60 Hz Sine Wave, VD = 90 V) Forward “On” Voltage VTM — 1.1 1.5 Volts (ITM = 1 A Peak) Dynamic Holding Current IH — — 100 mA Switching Resistance RS 0.1 — — kΩ Maximum Rate of Change of On-State Current di/dt — 50 — A/µs

CURRENT DERATING

α 140 α 110 120 α = Conduction Angle α = Conduction Angle Tj Rated = 125°C 100 Tj Rated = 125°C 100 80 α = 180° 90 40 α 20 = 180° 80000.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 1. Maximum Case Temperature Figure 2. Maximum Ambient Temperature

1.0 1.25 α = 180° 0.8 25°C 125°C 0.6 1.0 α 0.4 0.75 α = Conduction Angle 0.3 Tj Rated = 125°C 0.50 0.2 0.25 0.1 0 0.8 0.9 1.0 1.1 1.2 1.3 0 0.2 0.4 0.6 0.8 1.0 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 3. Typical Forward Voltage Figure 4. Power Dissipation

2 Motorola Thyristor Device DataIT, INSTANTANEOUS ON-STATE CURRENT (AMPS) T C MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) TA MAXIMUM ALLOWABLE AMBIENTPAV, MAXIMUM AVERAGE POWER DISSIPATION (WATTS) TEMPERATURE (° C),

THERMAL CHARACTERISTICS

1.0 LEAD LENGTH = 1/4″ 0.5 ZθJL(t) = RθJL • r(t) ∆TJL = Ppk RθJL[r(t)] t 0.3 p TIMEwhere: 0.2 ∆TJL = the increase in junction temperature above the lead temperature The temperature of the lead should be measured using a r(t) = normalized value of transient thermal resistance at time, thermocouple placed on the lead as close as possible to the 0.1 t from this figure. For example, tie point. The thermal mass connected to the tie point is nor- r(t ) = normalized value of mally large enough so that it will not significantly respond top transient resistance at time t . heat surges generated in the diode as a result of pulsed op- 0.05 p eration once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be de-0.03 termined by: 0.02 TJ = TL + ∆TJL 0.01 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k t, TIME (ms)

Figure 5. Thermal Response TYPICAL CHARACTERISTICS

100 250 90 225 80 200 70 175 60 150 50 125 40 100 30 75 20 50 10 2500–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Breakover Current Figure 7. Holding Current

ITM VTM Slope = RS

IH IS VS IDRM

I(BO) VDRM V(BO) (V

R (BO) VS) S ( IS I(BO)) Figure 8. V-1 Characteristics Motorola Thyristor Device Data 3

I ( B O ) , BREAKOVER CURRENT ( µ A) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) I H , HOLDING CURRENT (mA),

PACKAGE DIMENSIONS B D NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982. 1 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS

K STYLE 1: DIM MIN MAX MIN MAX

PIN 1. CATHODE A 0.370 0.380 9.40 9.65 2. ANODE B 0.190 0.210 4.83 5.33 D 0.048 0.052 1.22 1.32 K 1.000 ––– 25.40 –––

A K CASE 267–03

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 Motorola Thyristor Device Data ◊ MKP3V110/D]
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