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Order this document SEMICONDUCTOR TECHNICAL DATA by MKP1V120/D .designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like an SCR until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. Applications are: SIDACs • High Pressure Sodium Vapor Lighting 0.9 AMPERES RMS • Strobes and Flashers 110 thru 280 VOLTS • Igni...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MKP1V120/D

.designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like an SCR until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. Applications are: SIDACs • High Pressure Sodium Vapor Lighting 0.9 AMPERES RMS • Strobes and Flashers 110 thru 280 VOLTS • Ignitors • High Voltage Regulators • Pulse Generators MT1 MT2 CASE 59-04 (DO-41) Polarity denoted by cathode band MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) MKP1V120 Rating Symbol MKP1V130 Unit Off-State Repetitive Voltage VDRM ±90 Volts On-State Current RMS (TL = 80°C, Lead Length = 3/8″, IT(RMS) 0.9 Amp conduction angle = 180°, 60 Hz Sine Wave) On-State Surge Current (Non-repetitive) ITSM 4 Amps (60 Hz One Cycle Sine Wave, Peak Value) Operating Junction Temperature Range TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C Lead Solder Temperature TL 230 °C (Lead Length ≥ 1/16″ from Case, 10 s Max) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Lead RθJL 40 °C/W Lead Length = 3/8″ REV 1 Motorola Thyristor Device Data 1 Motorola, Inc. 1995,

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; both directions)

Characteristic Symbol Min Typ Max Unit Breakover Voltage VBO Volts MKP1V120 110 — 130 MKP1V130 120 — 140 Repetitive Peak Off-State Current IDRM — — 5 µA (60 Hz Sine Wave, VD = Rated VDRM) TJ = 125°C — — 50 Forward “On” Voltage VTM — 1.3 1.5 Volts (ITM = 1 A) Dynamic Holding Current IH — — 100 mA Switching Resistance RS 0.1 — — kΩ Breakover Current IBO — — 200 µA Maximum Rate-of-Change of On-State Current MKP1V120, 130, di/dt — 90 — A/µs 140 1.0 TJ = 125°C130 TL Sine Wave 120 0.8 Conduction Angle = 180° 3 ″ 3 11088″ Assembled in PCB Lead Length = 3 ″ 100 0.6 8 TJ = 125°C90 Sine Wave 80 Conduction Angle = 180° 0.4 60 0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 IT(RMS) ON-STATE CURRENT (AMPS) TA, MAXIMUM AMBIENT TEMPERATURE (°C)

Figure 1. Maximum Lead Temperature Figure 2. Maximum Ambient Temperature

10 1.25 7.0 T 5.0 J = 25°C 1.00 Conduction Angle = 180°C 3.0 2.0 TJ = 25°C 125°C 0.75 1.0 0.7 0.50 0.5 0.3 0.25 0.2 0.1 0 1.0 2.0 3.0 4.0 5.0 0 0.2 0.4 0.6 0.8 1.0 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) IT(RMS), ON-STATE CURRENT (AMPS)

Figure 3. Typical On-State Voltage Figure 4. Power Dissipation

2 Motorola Thyristor Device DataIT, INSTANTANEOUS ON-STATE CURRENT (AMPS) T L , MAXIMUM ALLOWABLE LEAD TEMPERATURE (° C) PRMS, POWER DISSIPATION (WATTS) I T ( RMS) , ON-STATE CURRENT (AMPS),

THERMAL CHARACTERISTICS

1.0 0.7 0.5 The temperature of the lead should be measured 0.3 using a thermocouple placed on the lead as close as 0.2 possible to the tie point. The thermal mass connected Z (t) = R • r(t) to the tie point is normally large enough so that it willθJL θJL ∆T = P R [r(t)] not significantly respond to heat surges generated in0.1 JL pk θJL t TIME the diode as a result of pulsed operation once steady-0.07 where: p state conditions are achieved. Using the measured 0.05 ∆TJL = the increase in junction temperature above the value of TL, the junction temperature may be deter-lead temperature mined by: 0.03 r(t) = normalized value of transient thermal resistance T = T + ∆T 0.02 at time, t from this figure. For example, J L JL r(tp) = normalized value of transient resistance at time t . 0.01 p 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k t, TIME (ms)

Figure 5. Thermal Response TYPICAL CHARACTERISTICS

1.4 1.0 1.2 1.0 0.9 0.8 0.6 0.8 0.4 –60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Breakover Voltage Figure 7. Holding Current

ITM VTM Slope = R 100 S

IH IS VS

IPK IDRM 10 I(BO) VDRM V(BO) 10% tw (V(BO)VS)

RS ( I1.0 S I(BO))

0.1 1.0 10 100 tw, PULSE WIDTH (ms)

Figure 8. Pulse Rating Curve Figure 9. V-I Characteristics Motorola Thyristor Device Data 3

IPK, PEAK CURRENT (AMPS) VB O , BREAKOVER VOLTAGE (NORMALIZED) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) I H , HOLDING CURRENT (NORMALIZED),

PACKAGE DIMENSIONS B

NOTES: 1. POLARITY DENOTED BY CATHODE BAND. 2. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION.

D K MILLIMETERS INCHES

DIM MIN MAX MIN MAX A 5.97 6.60 0.235 0.260

A B 2.79 3.05 0.110 0.120

D 0.76 0.86 0.030 0.034 K 27.94 ––– 1.100 –––

K CASE 59–04

(DO–41)

ISSUE M DATE 09/25/84

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 Motorola Thyristor Device Data ◊ MKP1V120/D]
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