Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MJL16218/D NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device

Order this document SEMICONDUCTOR TECHNICAL DATA by MJL16218/D NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device The MJL16218 is a state–of–the–art SWITCHMODE bipolar power transistor. It is POWER TRANSISTOR specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, 15 AMPERES high and very high resolution, full page, monochrome monitors. 1500 VOLTS — VCES • 1500 Volt Collector–Emitter Breakdown Capability 170 WATTS • Typical Dynamic Desaturation Specified (New Turn–Off Characteristic) • Application Spe...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MJL16218/D NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device

The MJL16218 is a state–of–the–art SWITCHMODE bipolar power transistor. It is POWER TRANSISTOR specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, 15 AMPERES high and very high resolution, full page, monochrome monitors. 1500 VOLTS — VCES • 1500 Volt Collector–Emitter Breakdown Capability 170 WATTS • Typical Dynamic Desaturation Specified (New Turn–Off Characteristic) • Application Specific State–of–the–Art Die Design • Fast Switching: 175 ns Inductive Fall Time (Typ) 2000 ns Inductive Storage Time (Typ) • Low Saturation Voltage: 0.2 Volts at 5.0 Amps Collector Current and 2.0 A Base Drive • Low Collector–Emitter Leakage Current — 250 µA Max at 1500 Volts — VCES • High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits — CASE 340G–02, STYLE 2 8.0 Volts (Min) TO–3PBL MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Breakdown Voltage VCES 1500 Vdc Collector–Emitter Sustaining Voltage VCEO(sus) 650 Vdc Emitter–Base Voltage VEBO 8.0 Vdc Collector Current — Continuous IC 15 Adc — Pulsed (1) ICM 20 Base Current — Continuous IB 7.0 Adc — Pulsed (1) IBM 14 Maximum Repetitive Emitter–Base W (BER) 0.2 mJ Avalanche Energy Total Power Dissipation @ TC = 25°C PD 170 Watts @ TC = 100°C 39 Derated above TC = 25°C 1.49 W/°C Operating and Storage Temperature Range TJ, Tstg – 55 to 125 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance — Junction to Case RθJC 0.67 °C/W Lead Temperature for Soldering Purposes TL 275 °C 1/8″ from the case for 5 seconds (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. (2) Proper strike and creepage distance must be provided. Designer’s and SCANSWITCH are trademarks of Motorola, Inc. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola, Inc. 1997 Motorola Bipolar Power Transistor Device Data 1, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (2) Collector Cutoff Current (VCE = 1500 V, VBE = 0 V) ICES — — 250 µAdc (VCE = 1200 V, VBE = 0 V) — — 25 Emitter–Base Leakage (VEB = 8.0 Vdc, IC = 0) IEBO — — 25 µAdc Emitter–Base Breakdown Voltage (IE = 1.0 mA, IC = 0) V(BR)EBO 8.0 11 — Vdc Collector–Emitter Sustaining Voltage (Table 1) (IC = 10 mAdc, IB = 0) VCEO(sus) 650 — — Vdc ON CHARACTERISTICS (2) Collector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 2.0 Adc) VCE(sat) — 0.17 1.0 Vdc (IC = 3.0 Adc, IB = 0.6 Adc) — 0.14 0.5 Base–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 1.0 Adc) VBE(sat) — 0.9 1.5 Vdc DC Current Gain (IC = 1.0 A, VCE = 5.0 Vdc) hFE — 24 — — (IC = 12 A, VCE = 5.0 Vdc) 4.0 6.0 — DYNAMIC CHARACTERISTICS Dynamic Desaturation Interval (IC = 5.5 A, IB1 = 2.2 A, LB = 1.5 µH) tds — 350 — ns Output Capacitance Cob — 300 500 pF (VCE = 10 Vdc, IE = 0, ftest = 100 kHz) Gain Bandwidth Product fT — 0.8 — MHz (VCE = 10 Vdc, IC = 0.5 A, ftest = 1.0 MHz) SWITCHING CHARACTERISTICS Inductive Load (IC = 6.0 A, IB = 2.0 A), High Resolution Deflection ns Simulator Circuit Table 2 Storage tsv — 2000 3000 Fall Time tfi — 175 250 (2) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.

SAFE OPERATING AREA I

10 C /IB = 5 10 ms 14 TJ ≤ 100°C 50 ms 1.0 10 100 ms 250 ms 6 0.1 0.01 1.0 10 100 1000 0 300 600 900 1200 1500 VCE, COLLECTOR–EMITTER VOLTAGE (V) VCE, COLLECTOR–EMITTER VOLTAGE (V) Figure 1. Maximum Forward Bias Figure 2. Maximum Reverse Bias Safe Operating Area Safe Operating Area 2 Motorola Bipolar Power Transistor Device Data IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A),

SAFE OPERATING AREA (continued)

FORWARD BIAS 1 There are two limitations on the power handling ability of a SECOND BREAKDOWN transistor: average junction temperature and second break- 0.8 DERATING down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; 0.6 i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate. THERMAL The data of Figure 1 is based on TC = 25 DERATINGC; TJ(pk) is 0.4 variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25C. Second breakdown limitations do not 0.2 derate the same as thermal limitations. Allowable current at the voltages shown on Figure 1 may be found at any case 0 temperature by using the appropriate curve on Figure 3. 25 45 65 85 105 125 At high case temperatures, thermal limitations will reduce TC, CASE TEMPERATURE (°C) the power that can be handled to values less than the limita- tions imposed by second breakdown. Figure 3. Power Derating REVERSE BIAS For inductive loads, high voltage and high current must be The safe level for these devices is specified as Reverse sustained simultaneously during turn–off, in most cases, with Biased Safe Operating Area and represents the voltage– the base–to–emitter junction reverse biased. Under these current condition allowable during reverse biased turnoff. conditions the collector voltage must be held to a safe level This rating is verified under clamped conditions so that the at or below a specific value of collector current. This can be device is never subjected to an avalanche mode. Figure 2 accomplished by several means such as active clamping, gives the RBSOA characteristics. RC snubbing, load line shaping, etc. Table 1. RBSOA/V(BR)CEO(SUS) Test Circuit 0.02 µF + V ≈ 11 V100 H.P. 214 OR EQUIV. P.G. 2N6191 + 0 10 µF– RB1 ≈ – 35VA

R

0.02 µF B2 50 + – 2N5337 1 µF – V T1 + V IC(pk) 0 V IC – V *IC L VCE(pk) Lcoil (ICpk) A T.U.T. V T MR856 CE1 VCC *IB T1 adjusted to obtain I C(pk) Vclamp VCC IB1

IB

V(BR)CEO RBSOA L = 10 mH L = 200 µH IB2 RB2 = ∞ RB2 = 0 VCC = 20 Volts VCC = 20 Volts RB1 selected for desired IB1 *Tektronix *P–6042 or *Equivalent Note: Adjust – V to obtain desired VBE(off) at Point A. Motorola Bipolar Power Transistor Device Data 3 POWER DERATING FACTOR,

TYPICAL ELECTRICAL CHARACTERISTICS

1.0 1.0 IC/IB = 2.5 IC/IB = 5.0 100°C 100°C 25°C 25°C 0.1 0.1 0.01 0.01 0.1 1.0 10 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 4. Typical Collector–Emitter Figure 5. Typical Collector–Emitter Saturation Voltage Saturation Voltage

10 10 IC/IB = 2.5 IC/IB = 5.0 1.0 25°C 1.0 25°C 100°C 100°C 0.1 0.1 0.1 1.0 10 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 6. Typical Emitter–Base Figure 7. Typical Emitter–Base Saturation Voltage Saturation Voltage

4 Motorola Bipolar Power Transistor Device Data VBE, BASE–EMITTER VOLTAGE (V) V, VOLTAGE (V) V, VOLTAGE (V) VBE, BASE–EMITTER VOLTAGE (V),

TYPICAL ELECTRICAL CHARACTERISTICS (continued)

100 100 HFE = 2.0 V HFE = 5.0 V 100°C 100°C 25°C 25°C 10 10 1.0 1.0 0.01 0.1 1.0 10 100 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 8. DC Current Gain Figure 9. DC Current Gain

1.0 25°C 100°C VBE(on) = 5.0 V 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (A)

Figure 10. “On” Voltages Motorola Bipolar Power Transistor Device Data 5

HFE , DC CURRENT GAIN V, VOLTAGE (V) HFE , DC CURRENT GAIN,

DYNAMIC DESATURATION

The SCANSWITCH series of bipolar power transistors are the voltage across the yoke drops. Roll off in the collector specifically designed to meet the unique requirements of hor- current ramp results in improper beam deflection and distor- izontal deflection circuits in computer monitor applications. tion of the image at the right edge of the screen. Design Historically, deflection transistor design was focused on mini- changes have been made in the structure of the SCAN- mizing collector current fall time. While fall time is a valid SWITCH series of devices which minimize the dynamic figure of merit, a more important indicator of circuit perfor- desaturation interval. Dynamic desaturation has been mance as scan rates are increased is a new characteristic, defined in terms of the time required for the VCE to rise from “dynamic desaturation.” In order to assure a linear collector 1.0 to 5.0 volts (Figures 9 and 10) and typical performance at current ramp, the output transistor must remain in hard satu- optimized drive conditions has been specified. Optimization ration during storage time and exhibit a rapid turn–off transi- of device structure results in a linear collector current ramp, tion. A sluggish transition results in serious consequences. excellent turn–off switching performance, and significantly As the saturation voltage of the output transistor increases, lower overall power dissipation. + 24 V Table 2. High Resolution Deflection Application Simulator U2 MC7812 VI G VN O C1 + D Q2 R5 (IC) Q5 100 µF +C2 MJ110161kMJ11016 10 µF (IB) R11k6.2 V C6 ++ C3 R7 R8 R9 10 µF 100 µF 2.7 k 9.1 k 470 R10 47 LY C4 C5 100 V 0.005 0.1 R11 Q3 D2 CY76470 MJE MUR460 (DC) OSC VCC1W15031 R2 R381% OUT V R510 250 U1 T1 LB

CE

SYNC GNDR6 MC1391P Q4 Q11k2DUTR12 D1 R4 MUR110 22 BS1701WT1: Ferroxcube Pot Core #1811 P3C8 LB = 1.5 µH Primary/Sec. Turns Ratio = 18:6 CY = 0.01 µF Gapped for LP = 30 µH LY = 13 µH IB1 = 2.2 A DYNAMIC DESATURATION TIME 4 IS MEASURED FROM VCE = 1 V TO VCE = 5 V IB2 = 4.5A2tds0246810 TIME (2 µs/DIV) TIME (ns) Figure 11. Deflection Simulator Circuit Base Figure 12. Definition of Dynamic Drive Waveform Desaturation Measurement 6 Motorola Bipolar Power Transistor Device Data IB, BASE CURRENT (A) VCE, COLLECTOR–EMITTER VOLTAGE (V),

PACKAGE DIMENSIONS

0.25 (0.010) MTBM–B– –Q– –T– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI

C Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

U E N MILLIMETERS INCHES

DIM MIN MAX MIN MAX A 2.8 2.9 1.102 1.142

A B 19.3 20.3 0.760 0.800

C 4.7 5.3 0.185 0.209

L D 0.93 1.48 0.037 0.058R123E1.9 2.1 0.075 0.083

F 2.2 2.4 0.087 0.102 –Y– G 5.45 BSC 0.215 BSC

P H 2.6 3.0 0.102 0.118 K J 0.43 0.78 0.017 0.031

K 17.6 18.8 0.693 0.740 L 11.0 11.4 0.433 0.449 N 3.95 4.75 0.156 0.187

W P 2.2 2.6 0.087 0.102F 2 PL Q 3.1 3.5 0.122 0.137 G R 2.15 2.35 0.085 0.093 J U 6.1 6.5 0.240 0.256 D 3 PL W 2.8 3.2 0.110 0.125H

0.25 (0.010) MYQSSTYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER

CASE 340G–02 TO–3PBL ISSUE F

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Motorola Bipolar Power Transistor Device Data 7

, Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps 8 ◊ Motorola Bipolar Power Transistor DevicMe JDLa1t6a218/D]
15

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