Download: ON Semiconductor SWITCHMODE MJE13007 NPN Bipolar Power Transistor For Switching Power Supply Applications • VCEO(sus) 400 V • Reverse Bias SOA with Inductive Loads @ TC = 100°C

ON Semiconductor SWITCHMODE MJE13007 NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly POWER TRANSISTOR suited for 115 and 220 V switchmode applications such as Switching 8.0 AMPERES 400 VOLTS Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and 80 WATTS Deflection circuits. • VCEO(sus) 400 V • Reverse Bias SOA with Inductive Loads @ TC = 100°C • 700 V Blocking Capability • SOA and Switching Applications Information • Standard ...
Author: Florian Hartmann Shared: 8/19/19
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ON Semiconductor SWITCHMODE MJE13007 NPN Bipolar Power Transistor For Switching Power Supply Applications

The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly POWER TRANSISTOR suited for 115 and 220 V switchmode applications such as Switching 8.0 AMPERES 400 VOLTS Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and 80 WATTS Deflection circuits. • VCEO(sus) 400 V • Reverse Bias SOA with Inductive Loads @ TC = 100°C • 700 V Blocking Capability • SOA and Switching Applications Information • Standard TO–220 MAXIMUM RATINGS Rating Symbol MJE13007 Unit Collector–Emitter Sustaining Voltage VCEO 400 Vdc Collector–Emitter Breakdown Voltage VCES 700 Vdc Emitter–Base Voltage VEBO 9.0 Vdc Collector Current — Continuous IC 8.0 Adc Collector Current — Peak (1) ICM 16 Base Current — Continuous IB 4.0 Adc 4 Base Current — Peak (1) IBM 8.0 Emitter Current — Continuous IE 12 Adc Emitter Current — Peak (1) IEM 24 STYLE 1: Total Device Dissipation @ TC = 25°C PD 80 Watts PIN 1. BASE 2. COLLECTOR Derate above 25°C 0.64 W/°C 1 3. EMITTER 2 4. COLLECTOR Operating and Storage Temperature TJ, Tstg – 65 to 150 °C 3 THERMAL CHARACTERISTICS CASE 221A–09 Thermal Resistance R TO–220ABθJC °1.56° °C/W — Junction to Case RθJA °62.5° MJE13007 — Junction to Ambient Maximum Lead Temperature for Soldering TL 260 °C Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. *Measurement made with thermocouple contacting the bottom insulated mounting surface of the *package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied *at a mounting torque of 6 to 8•lbs. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: April, 2002 – Rev. 4 MJE13007/D, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit *OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage VCEO(sus) 400 — — Vdc (IC = 10 mA, IB = 0) Collector Cutoff Current ICES mAdc (VCES = 700 Vdc) — — 0.1 (VCES = 700 Vdc, TC = 125°C) — — 1.0 Emitter Cutoff Current IEBO — — 100 µAdc (VEB = 9.0 Vdc, IC = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased IS/b See Figure 6 Clamped Inductive SOA with Base Reverse Biased — See Figure 7 *ON CHARACTERISTICS DC Current Gain hFE — (IC = 2.0 Adc, VCE = 5.0 Vdc) 8.0 — 40 (IC = 5.0 Adc, VCE = 5.0 Vdc) 5.0 — 30 Collector–Emitter Saturation Voltage VCE(sat) Vdc (IC = 2.0 Adc, IB = 0.4 Adc) — — 1.0 (IC = 5.0 Adc, IB = 1.0 Adc) — — 2.0 (IC = 8.0 Adc, IB = 2.0 Adc) — — 3.0 (IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C) — — 3.0 Base–Emitter Saturation Voltage VBE(sat) Vdc (IC = 2.0 Adc, IB = 0.4 Adc) — — 1.2 (IC = 5.0 Adc, IB = 1.0 Adc) — — 1.6 (IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C) — — 1.5 DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product fT 4.0 14 — MHz (IC = 500 mAdc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance Cob — 80 — pF (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time td — 0.025 0.1 µs Rise Time (VCC = 125 Vdc, IC = 5.0 A, tr — 0.5 1.5 IB1 = IB2 = 1.0 A, tp = 25 µs, Storage Time Duty Cycle ≤ 1.0%) ts — 1.8 3.0 Fall Time tf — 0.23 0.7 Inductive Load, Clamped (Table 1) Voltage Storage Time VCC = 15 Vdc, IC = 5.0 A TC = 25°C tsv — 1.2 2.0 µs Vclamp = 300 Vdc TC = 100°C — 1.6 3.0 Crossover Time IB(on) = 1.0 A, IB(off) = 2.5 A TC = 25°C tc — 0.15 0.30 µs LC = 200 µH TC = 100°C — 0.21 0.50 Fall Time TC = 25°C tfi — 0.04 0.12 µs TC = 100°C — 0.10 0.20 * Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%., 1.4 10 IC/IB = 5 5 IC/IB = 5 1.2 0.5 TC = -40°C 0.2 0.8 T = -40°C 25° CC 0.1 25°C 0.6 0.05100°C 100°C 0.02 0.4 0.01 0.01 0.02 0.05 0.1 0.2 0.512510 0.01 0.02 0.05 0.1 0.2 0.512510 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. Base–Emitter Saturation Voltage Figure 2. Collector–Emitter Saturation Voltage TJ = 25°C 2.5 1.5 IC = 8 A IC = 5 A1 IC = 3 A 0.5 IC = 1 A 0.01 0.02 0.05 0.1 0.2 0.5123510 IB, BASE CURRENT (AMPS) Figure 3. Collector Saturation Region 100 10000 TJ = 25°C TJ = 100°

C

C ib 25°C 10 40°C Cob V 100CE = 5V110 0.01 0.1 1 10 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS) Figure 4. DC Current Gain Figure 5. Capacitance VBE(sat), BASE-EMITTER SATURATION hFE, DC CURRENT GAIN VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE(sat), COLLECTOR-EMITTER SATURATIONC, CAPACITANCE (pF) VOLTAGE (VOLTS), 100 10 50 Extended SOA @ 1 µs, 10 µs 2081µs 5 10 µs 2 TC = 25°C 6 TC ≤ 100°CDC 1 ms 1 GAIN ≥ 45 ms LC = 500 µH0.5 4 0.2 VBE(off)BONDING WIRE LIMIT 0.1 THERMAL LIMIT 2 -5 V 0.05 SECOND BREAKDOWN LIMIT CURVES APPLY BELOW 0.02 RATED VCEO0V-2 V 0.01 0 10 20 30 50 70 100 200 300 500 0 100 200 300 400 500 600 700 8001000 VCEV, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Maximum Forward Bias Figure 7. Maximum Reverse Bias Switching Safe Operating Area Safe Operating Area 1 There are two limitations on the power handling ability of a transistor: average junction temperature and second SECOND BREAKDOWN 0.8 breakdown. Safe operating area curves indicate IC — VDERATING CE limits of the transistor that must be observed for reliable op- 0.6 eration; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. THERMAL The data of Figure 6 is based on TC = 25°C; TJ(pk) is vari- 0.4 DERATING able depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated 0.2 when TC ≥ 25°C. Second breakdown limitations do not der- ate the same as thermal limitations. Allowable current at the voltages shown on Figure 6 may be found at any case tem- 20 40 60 80 100 120 140 160 perature by using the appropriate curve on Figure 8. T , CASE TEMPERATURE (°C) At high case temperatures, thermal limitations will re-C duce the power that can be handled to values less than the Figure 8. Forward Bias Power Derating limitations imposed by second breakdown. Use of reverse biased safe operating area data (Figure 7) is discussed in the applications information section. 0.7 D = 0.5 0.5 D = 0.2 0.2 D = 0.1 0.1 RθJC(t) = r(t) RθJC 0.07 D = 0.05 P(pk) RθJC = 1.56°C/W MAX 0.05 D CURVES APPLY FOR POWER D = 0.02 t1 PULSE TRAIN SHOWN t READ TIME AT t2 1 0.02 TJ(pk) - TC = P(pk) RθJC(t) D = 0.01 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.512510 20 50 100 200 500 10k t, TIME (msec) Figure 9. Typical Thermal Response for MJE13007 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) POWER DERATING FACTOR IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS), SPECIFICATION INFORMATION FOR SWITCHMODE APPLICATIONS INTRODUCTION at 25°C and 100°C. Increasing the reverse bias will give The primary considerations when selecting a power some improvement in device blocking capability. transistor for SWITCHMODE applications are voltage and The sustaining or active region voltage requirements in current ratings, switching speed, and energy handling switching applications occur during turn–on and turn–off. If capability. In this section, these specifications will be the load contains a significant capacitive component, high discussed and related to the circuit examples illustrated in current and voltage can exist simultaneously during turn–on Table 2.(1) and the pulsed forward bias SOA curves (Figure 6) are the proper design limits. VOLTAGE REQUIREMENTS For inductive loads, high voltage and current must be Both blocking voltage and sustaining voltage are sustained simultaneously during turn–off, in most cases, important in SWITCHMODE applications. with the base to emitter junction reverse biased. Under these Circuits B and C in Table 2 illustrate applications that conditions the collector voltage must be held to a safe level require high blocking voltage capability. In both circuits the at or below a specific value of collector current. This can be switching transistor is subjected to voltages substantially accomplished by several means such as active clamping, RC higher than VCC after the device is completely off (see load snubbing, load line shaping, etc. The safe level for these line diagrams at IC = Ileakage ≈ 0 in Table 2). The blocking devices is specified as a Reverse Bias Safe Operating Area capability at this point depends on the base to emitter (Figure 7) which represents voltage–current conditions that conditions and the device junction temperature. Since the can be sustained during reverse biased turn–off. This rating highest device capability occurs when the base to emitter is verified under clamped conditions so that the device is junction is reverse biased (VCEV), this is the recommended never subjected to an avalanche mode. and specified use condition. Maximum ICEV at rated VCEV (1) For detailed information on specific switching applications, see is specified at a relatively low reverse bias (1.5 Volts) both (1) ON Semiconductor Application Note AN719, AN873, AN875, AN951.,

Table 1. Test Conditions For Dynamic Performance RESISTIVE

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING SWITCHING

VCC

+15V1µ150Ω 100Ω MTP8P10F 100 µF L +125 3W 3W MTP8P10 MUR8100E V MPF930

R

MUR105 C MPF930 RB1 IC Vclamp = 300 Vdc TUT +10V RI B MJE210ABSCOPE R IB2 B 5.1 k 50Ω D COMMON 150Ω TUT VCE 3W 1 500 µF 51 MTP12N10 -4 V Voff 1 µF Inductive V(BR)CEO(sus) Switching RBSOA L = 10 mH L = 200 mH L = 500 mH VCC = 125 V RB2 = 8 RB2 = 0RR= 25 Ω B2 = 0 C VCC = 20 Volts VCC = 15 Volts VCC = 15 Volts D1 = 1N5820 OR I = 100 mA R selected for R selected for EQUIV.C(pk) B1 B1 desired IB1 desired IB1

TYPICAL

t CLAMPED t1 ADJUSTED TOIfWAVE- 25 µsC tf UNCLAMPED ≈ t2 OBTAIN IC FORMS +11 VL ≈ coil (ICM) I t CM1VVPEAKCC CEttV01 tf L CE ≈ coil (ICM) tV2CE Vclamp IB19VVCEM Vclamp tr, tf < 10 ns TEST EQUIPMENT IB DUTY CYCLE = 1.0% t SCOPE TEKTRONIX RB AND RC ADJUSTED TIME t2 475 OR EQUIVALENT FOR DESIRED IB AND II CB2 TEST WAVEFORMS CIRCUIT TEST CIRCUITS

VALUES

, VOLTAGE REQUIREMENTS (continued) SWITCHING TIME NOTES In the four application examples (Table 2) load lines are In resistive switching circuits, rise, fall, and storage times shown in relation to the pulsed forward and reverse biased have been defined and apply to both current and voltage SOA curves. waveforms since they are in phase. However, for inductive In circuits A and D, inductive reactance is clamped by the loads which are common to SWITCHMODE power diodes shown. In circuits B and C the voltage is clamped by supplies and any coil driver, current and voltage waveforms the output rectifiers, however, the voltage induced in the are not in phase. Therefore, separate measurements must be primary leakage inductance is not clamped by these diodes made on each waveform to determine the total switching and could be large enough to destroy the device. A snubber time. For this reason, the following new terms have been network or an additional clamp may be required to keep the defined. turn–off load line within the Reverse Bias SOA curve. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp Load lines that fall within the pulsed forward biased SOA trv = Voltage Rise Time, 10–90% Vclamp curve during turn–on and within the reverse bias SOA curve tfi = Current Fall Time, 90–10% IC during turn–off are considered safe, with the following tti = Current Tail, 10–2% IC assumptions: tc = Crossover Time, 10% Vclamp to 10% IC 1. The device thermal limitations are not exceeded. An enlarged portion of the turn–off waveforms is shown 2. The turn–on time does not exceed 10 µs in Figure 12 to aid in the visual identity of these terms. For (see standard pulsed forward SOA curves in Figure 6). the designer, there is minimal switching loss during storage 3. The base drive conditions are within the specified time and the predominant switching power losses occur limits shown on the Reverse Bias SOA curve (Figure 7). during the crossover interval and can be obtained using the CURRENT REQUIREMENTS standard equation from AN222A: An efficient switching transistor must operate at the PSWT = 1/2 VCCIC(tc) f required current level with good fall time, high energy Typical inductive switching times are shown in Figure 13. handling capability and low saturation voltage. On this data In general, trv + tfi ≅ tc. However, at lower test currents this sheet, these parameters have been specified at 5.0 amperes relationship may not be valid. which represents typical design conditions for these devices. As is common with most switching transistors, resistive The current drive requirements are usually dictated by the switching is specified at 25°C and has become a benchmark V specification because the maximum saturation for designers. However, for designers of high frequencyCE(sat) voltage is specified at a forced gain condition which must be converter circuits, the user oriented specifications which duplicated or exceeded in the application to control the make this a “SWITCHMODE” transistor are the inductive saturation voltage. switching speeds (tc and tsv) which are guaranteed at 100°C. SWITCHING REQUIREMENTS In many switching applications, a major portion of the transistor power dissipation occurs during the fall time (tfi). For this reason considerable effort is usually devoted to reducing the fall time. The recommended way to accomplish this is to reverse bias the base–emitter junction during turn–off. The reverse biased switching characteristics for inductive loads are shown in Figures 12 and 13 and resistive loads in Figures 10 and 11. Usually the inductive load components will be the dominant factor in SWITCHMODE applications and the inductive switching data will more closely represent the device performance in actual application. The inductive switching characteristics are derived from the same circuit used to specify the reverse biased SOA curves, (see Table 1) providing correlation between test procedures and actual use conditions.,

SWITCHING PERFORMANCE

10000 10000 7000 VCC = 125 VVCC = 125 V 5000 ts IC/IB = 5IC/IB = 5 I = I IB(on) = I B(on) B(off) B(off) TJ = 25°CT 1000 J = 25°C tr PW = 25 µs PW = 25 µs 2000 100 500 tf td 200 10 1001234567891012345678910 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. Turn–On Time (Resistive Load) Figure 11. Turn–Off Time (Resistive Load) IC IC/IV B = 5 clamp 5000 90% Vclamp 90% IC IB(off) = IC/2

V

2000 clamp = 300Vtttttsv rv fi ti svLC = 200 µH tc 1000 VCC = 15 V TJ = 25°C500 Vclamp 10% 10% 200tVcIclamp

IC

B 90% I 2%B1 I 100C tfi 0.1 0.2 0.3 0.5 0.71235710

TIME

IC, COLLECTOR CURRENT (AMP) Figure 12. Inductive Switching Figure 13. Typical Inductive Switching Times Measurements t, TIME (ns) t, TIME (ns) t, TIME (ns),

Table 2. Applications Examples of Switching Circuits

CIRCUIT LOAD LINE DIAGRAMS TIME DIAGRAMS SERIES SWITCHING 16 A TURN-ON (FORWARD BIAS) SOA REGULATOR ton ≤ 10 µs IC DUTY CYCLE ≤ 10% TC = 100°C PD = 3200W2tt300 V TURN-OFF (REVERSE BIAS) SOA on off

A 1.5 V ≤ VBE(off) ≤ 9 V8 A

TURN-ON DUTY CYCLE ≤ t 10% TIME

V

V V

CE

CC O TURN-OFF

VCC

400V1700V1+

VCC

COLLECTOR VOLTAGE t Notes: TIME 1 See AN569 for Pulse Power Derating Procedure. FLYBACK TURN-ON (FORWARD BIAS) SOA INVERTER 16 A ton ≤ 10 µs IC DUTY CYCLE ≤ 10% TC = 100°C PD = 3200W2toff VCC VO 300 V TURN-OFF (REVERSE BIAS) SOA ton

B N 1.5 V ≤ VBE(off) ≤ 9 V

t8ADUTY CYCLE ≤ 10% LEAKAGE SPIKETURN-OFF VCE VCC + TURN-ON VCC + N (Vo) N (Vo) + LEAKAGE SPIKE VCC + VCC 400V1700V1VCC + N (V ) COLLECTOR VOLTAGE Notes: ot1See AN569 for Pulse Power Derating Procedure. PUSH–PULL TURN-ON (FORWARD BIAS) SOA IC INVERTER/CONVERTER 16 A ton ≤ 10 µs DUTY CYCLE ≤ 10% toff T = 100°C PD = 3200 W 2C ton t 300 V TURN-OFF (REVERSE BIAS) SOA

C 1.5 V ≤ VBE(off) ≤ 9 V VCE

VO8ATURN-ON DUTY CYCLE ≤ 10% 2 VCC VCC VCC2VTURN-OFF CC + VCC 400V1700V1tCOLLECTOR VOLTAGE Notes: 1 See AN569 for Pulse Power Derating Procedure. TURN-ON (FORWARD BIAS) SOA SOLENOID DRIVER 16 A ton ≤ 10 µs

I

DUTY CYCLE ≤ 10% C TC = 100°C PD = 3200W2toff V tCC on 300 V TURN-OFF (REVERSE BIAS) SOA 1.5 V ≤ VBE(off) ≤ 9VtSOLENOID8A

D DUTY CYCLE ≤ 10% VCE

TURN-OFF

VCC

TURN-ON + VCC 400V1700V1tCOLLECTOR VOLTAGE Notes: 1 See AN569 for Pulse Power Derating Procedure. COLLECTOR CURRENT COLLECTOR CURRENT COLLECTOR CURRENT COLLECTOR CURRENT,

PACKAGE DIMENSIONS TO–220AB CASE 221A–09 ISSUE AA

NOTES: –T– SEATING 1. DIMENSIONING AND TOLERANCING PER ANSIPLANE Y14.5M, 1982.

BFC2. CONTROLLING DIMENSION: INCH. T 3. DIMENSION Z DEFINES A ZONE WHERE ALLS BODY AND LEAD IRREGULARITIES ARE

ALLOWED. INCHES MILLIMETERS

Q A DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75123UB0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82

H D 0.025 0.035 0.64 0.88

F 0.142 0.147 3.61 3.73

K G 0.095 0.105 2.42 2.66 Z H 0.110 0.155 2.80 3.93

J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27

LRL0.045 0.060 1.15 1.52

N 0.190 0.210 4.83 5.33

VJQ0.100 0.120 2.54 3.04

R 0.080 0.110 2.04 2.79

G S 0.045 0.055 1.15 1.39

STYLE 1: T 0.235 0.255 5.97 6.47D PIN 1. BASE U 0.000 0.050 0.00 1.27

N 2. COLLECTOR V 0.045 - 1.15 -

3. EMITTER Z - 0.080 - 2.04 4. COLLECTOR,

Notes

, SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center Literature Distribution Center for ON Semiconductor 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 P.O. Box 5163, Denver, Colorado 80217 USA Phone: 81–3–5740–2700 Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Email: email is hidden Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: email is hidden ON Semiconductor Website: http://onsemi.com For additional information, please contact your local N. American Technical Support: 800–282–9855 Toll Free USA/Canada Sales Representative. http://onsemi.com MJE13007/D]
15

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Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10S120DC3/D Integrated Power Stage for 2.0 hp Motorola Preferred Device 460 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10S120DC3/D Integrated Power Stage for 2.0 hp Motorola Preferred Device 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 10 AMP, 1200 VOLT des
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 10 AMP, 600 VOLT designed for
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B5A120D/D Integrated Power Stage for 460 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B5A120D/D Integrated Power Stage Motorola Preferred Devices for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 1.0, 2.0 and 3.0 hp motor drive applications. The inverter 5.
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B20E60D3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B20E60D3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drives This module integrates a 3–phase inverter and 3–phase rectifier in a single convenient package. It is designed for 2.0 hp motor drive 20 AMP, 600 VOLT applica
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10N120/D Integrated Power Stage for 460 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10N120/D Integrated Power Stage for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp motor drive applications. The inverter incorporates advanced Motoro
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B15E60D3/D Integrated Power Stage for 230 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B15E60D3/D Integrated Power Stage for 230 VAC Motor Drives Motorola Preferred Devices These modules integrate a 3–phase inverter and 3–phase rectifier in a single convenient package. They are designed for 0.5, 1.0, and 1.5 hp motor drive appli
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10A60D/D Motorola Preferred Devices Integrated Power Stage for 230 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10A60D/D Motorola Preferred Devices Integrated Power Stage for 230 VAC Motor Drives 10, 20 AMP, 600 V These modules integrate a 3–phase inverter in a single convenient package. HYBRID POWER MODULES They are designed for 1.0 and 2.0 hp motor d
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60/D  N–Channel Enhancement–Mode Silicon Gate
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60/D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO–264 termination scheme to provide an enhanced and reliable high 40 A @ 90°C voltage–blocking cap
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60D/D  N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60D/D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264 40 A @ 90°C This Insulated Gate Bipolar Transistor (IGBT) is co–packaged 66 A @ 25°C with a soft recovery ultra–fast rectifier and uses an advance
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY30N60D/D  N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY30N60D/D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264 30 A @ 90°C This Insulated Gate Bipolar Transistor (IGBT) is co–packaged 50 A @ 25°C with a soft recovery ultra–fast rectifier and uses an advance
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1946/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1946/D The RF Line .designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance 30 W, 136–220 MHz Output Power = 30 Watts RF POWER Power Ga
Order this document The RF MOSFET Line 85 WATTS, 1.0 GHz N–Channel Enhancement–Mode Lateral MOSFET 28 VOLTS
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF185/D The RF MOSFET Line 85 WATTS, 1.0 GHz N–Channel Enhancement–Mode Lateral MOSFET 28 VOLTS LATERAL N–CHANNEL • High Gain, Rugged Device BROADBAND • Broadband Performance from HF to 1 GHz RF POWER MOSFET • Bottom Side Source Eliminates DC Isol
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF184/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF184/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen- cies to 1.0 GHz. The high gain and broadband performance of these devices 60 W, 1.0 GHz makes them idea
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF183/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF183/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen- cies to 1.0 GHz. The high gain and broadband performance of these devices 45 W, 1.0 GHz makes ithem ide
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF182/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF182/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz 30 W, 1.0 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common LATERAL N–CHANNEL Mode Inductance