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Order this document SEMICONDUCTOR TECHNICAL DATA by MJ3281A/D " *Motorola Preferred Device ! 15 AMPERE The MJ3281A and MJ1302A are PowerBase power transistors for high power COMPLEMENTARY audio, disk head positioners and other linear applications. SILICON POWER TRANSISTORS • Designed for 100 W Audio Frequency 200 VOLTS • Gain Complementary: 250 WATTS — Gain Linearity from 100 mA to7A— High Gain — 60 to 175 — hFE = 45 (Min) @ IC = 8 A • Low Harmonic Distortion • High Safe Operation Area — 1 A/100 V @ 1 sec • High fT — 30 MHz Typical CASE 1–07 TO–204AA (TO–3) MAXIMUM RATINGS (TJ = 25°C unless o...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MJ3281A/D

" *Motorola Preferred Device ! 15 AMPERE The MJ3281A and MJ1302A are PowerBase power transistors for high power COMPLEMENTARY audio, disk head positioners and other linear applications. SILICON POWER

TRANSISTORS

• Designed for 100 W Audio Frequency 200 VOLTS • Gain Complementary: 250 WATTS — Gain Linearity from 100 mA to7A— High Gain — 60 to 175 — hFE = 45 (Min) @ IC = 8 A • Low Harmonic Distortion • High Safe Operation Area — 1 A/100 V @ 1 sec • High fT — 30 MHz Typical CASE 1–07 TO–204AA (TO–3) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 200 Vdc Collector–Base Voltage VCBO 200 Vdc Emitter–Base Voltage VEBO 7 Vdc Collector–Emitter Voltage — 1.5 V VCEX 200 Vdc Collector Current — Continuous IC 15 Adc Collector Current — Peak (1) 25 Base Current — Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25°C PD 250 Watts Derate Above 25°C 1.43 W/°C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.7 °C/W (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle <10%. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage VCEO(sus) 200 — — Vdc (IC = 100 mAdc, IB = 0) Emitter–Base Voltage VEBO 7 — — Vdc (IE = 100 µAdc, IC = 0) Collector Cutoff Current ICBO — — 50 µAdc (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current IEBO — — 5 µAdc (VEB = 5 Vdc, IC = 0) Emitter Cutoff Current IEBO — — 25 µAdc (VEB = 7 Vdc, IC = 0) SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased IS/b Adc (VCE = 50 Vdc, t = 1 s (non–repetitive) 4 — — (VCE = 100 Vdc, t = 1 s (non–repetitive) 1 — — ON CHARACTERISTICS DC Current Gain hFE (IC = 100 mAdc, VCE = 5 Vdc) 60 125 175 (IC = 1 Adc, VCE = 5 Vdc) 60 — 175 (IC = 3 Adc, VCE = 5 Vdc) 60 — 175 (IC = 5 Adc, VCE = 5 Vdc) 60 — 175 (IC = 7 Adc, VCE = 5 Vdc) 60 115 175 (IC = 8 Adc, VCE = 5 Vdc) 45 — — (IC = 15 Adc, VCE = 5 Vdc) 12 35 — Collector–Emitter Saturation Voltage VCE(sat) — — 3 Vdc (IC = 10 Adc, IB = 1 Adc) DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product fT — 30 — MHz (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) Output Capacitance Cob — — 600 pF (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2%. 2 Motorola Bipolar Power Transistor Device Data,

TYPICAL CHARACTERISTICS PNP MJ1302A NPN MJ3281A

100 100 VCE = 10 V VCE = 10 V 10 VCE = 5 V 10 VCE = 5 V TJ = 25°C TJ = 25°C ftest = 1 MHz ftest = 1 MHz11012345678012345678IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 1. Current–Gain — Bandwidth Product Figure 2. Current–Gain — Bandwidth Product PNP MJ1302A NPN MJ3281A

1000 1000 VCE = 20 V 100 VCE = 20 V VCE = 5 V VCE = 5 V 10 10 0.1 1 10 100 0.1 1 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain Figure 4. DC Current Gain PNP MJ1302A NPN MJ3281A

1000 1000 VCE = 5 V VCE = 5 V 25°C 25°C 100°C 100°C 100 100 – 25°C – 25°C 10 10 0.1 1 10 100 0.1 1 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V Motorola Bipolar Power Transistor Device Data 3

hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz),

TYPICAL CHARACTERISTICS PNP MJ1302A NPN MJ3281A

1.8 3.2 TJ = 25°C TJ = 25°C2.8 1.6 2.4 1.4 1.6 1.2 1.2 0.8 0.41010 11 12 13 14 15 16 17 18 19 200246810 12 14 16 18 20 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 7. Typical Base–Emitter Voltage Figure 8. Typical Base–Emitter Voltage PNP MJ1302A NPN MJ3281A

20 20 TJ = 25°C IB = 1 A 0.6 A IB = 1 A 0.6 A 0.4 A 0.8 A 0.4 A 0.8 A16 16 0.2 A 0.2 A 12 128844TJ = 25°C00012345678910012345678910 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 9. Typical Output Characteristics Figure 10. Typical Output Characteristics There are two limitations on the power handling ability of a

transistor; average junction temperature and secondary 10 breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable op- eration; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 11 is based on TJ(pk) = 200°C; TC is

1 variable depending on conditions. At high case tempera- 250 ms tures, thermal limitations will reduce the power than can be1shandled to values less than the limitations imposed by se- cond breakdown. 0.1 1 10 100 1000 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 11. Forward Bias Safe Operating Area (FBSOA)

4 Motorola Bipolar Power Transistor Device Data IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) VBE(on), BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) VBE(on), BASE-EMITTER VOLTAGE (VOLTS),

PACKAGE DIMENSIONS A N NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

C Y14.5M, 1982.

–T– SEATING 2. CONTROLLING DIMENSION: INCH.

E PLANE 3. ALL RULES AND NOTES ASSOCIATED WITHREFERENCED TO–204AA OUTLINE SHALL APPLY. D 2 PL K

INCHES MILLIMETERS 0.13 (0.005) MTQMYMDIM MIN MAX MIN MAX A 1.550 REF 39.37 REF

U

–Y– B ––– 1.050 ––– 26.67VLC0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.092E0.055 0.070 1.40 1.77

GBG0.430 BSC 10.92 BSC H1H0.215 BSC 5.46 BSC

K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC –Q– N ––– 0.830 ––– 21.08 Q 0.151 0.165 3.84 4.19 0.13 (0.005) MTYMU1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR

CASE 1–07 TO–204AA (TO–3) ISSUE Z Motorola Bipolar Power Transistor Device Data 5

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 Motorola Bipolar Power Transistor Device Data ◊ MJ3281A/D]
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