Download: ON Semiconductor PNP MJ21193* Silicon Power Transistors NPN • Total Harmonic Distortion Characterized 16 AMPERE • High DC Current Gain – SILICON POWER

ON Semiconductor PNP MJ21193* Silicon Power Transistors NPN The MJ21193 and MJ21194 utilize Perforated Emitter technology MJ21194* and are specifically designed for high power audio output, disk head *ON Semiconductor Preferred Device positioners and linear applications. • Total Harmonic Distortion Characterized 16 AMPERE COMPLEMENTARY • High DC Current Gain – SILICON POWER hFE = 25 Min @ IC = 8 Adc TRANSISTORS • Excellent Gain Linearity 250 VOLTS • High SOA: 2.5 A, 80 V, 1 Second 250 WATTS MAXIMUM RATINGS Sym- Rating bol Value Unit Collector–Emitter Voltage VCEO 250 Vdc Collector–Base Voltage...
Author: Florian Hartmann Shared: 8/19/19
Downloads: 703 Views: 1957

Content

ON Semiconductor PNP MJ21193* Silicon Power Transistors NPN The MJ21193 and MJ21194 utilize Perforated Emitter technology MJ21194*

and are specifically designed for high power audio output, disk head *ON Semiconductor Preferred Device positioners and linear applications. • Total Harmonic Distortion Characterized 16 AMPERE

COMPLEMENTARY

• High DC Current Gain – SILICON POWER hFE = 25 Min @ IC = 8 Adc TRANSISTORS • Excellent Gain Linearity 250 VOLTS • High SOA: 2.5 A, 80 V, 1 Second 250 WATTS MAXIMUM RATINGS Sym- Rating bol Value Unit Collector–Emitter Voltage VCEO 250 Vdc Collector–Base Voltage VCBO 400 Vdc CASE 1–07 Emitter–Base Voltage VEBO 5 Vdc TO–204AA Collector–Emitter Voltage – 1.5VV400 Vdc (TO–3)CEX Collector Current — Continuous IC 16 Adc Collector Current — Peak (1) 30 Base Current — Continuous IB 5 Adc Total Power Dissipation @ TC = 25°C PD 250 Watts Derate Above 25°C 1.43 W/°C Operating and Storage Junction Temperature Range TJ, –65 to °C Tstg +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.7 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage VCEO(sus) 250 — — Vdc (IC = 100 mAdc, IB = 0) Collector Cutoff Current ICEO — — 100 µAdc (VCE = 200 Vdc, IB = 0) (1) Pulse Test: Pulse Width = 5 µs, Duty Cycle ≤10%. (continued) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: March, 2001 – Rev. 3 MJ21193/D, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS Emitter Cutoff Current IEBO — — 100 µAdc (VCE = 5 Vdc, IC = 0) Collector Cutoff Current ICEX — — 100 µAdc (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward IS/b Adc Biased 5 — — (VCE = 50 Vdc, t = 1 s (non–repetitive) 2.5 — — (VCE = 80 Vdc, t = 1 s (non–repetitive) ON CHARACTERISTICS DC Current Gain hFE 75 (IC = 8 Adc, VCE = 5 Vdc) 25 — (IC = 16 Adc, IB = 5 Adc) 8 — Base–Emitter On Voltage VBE(on) — — 2.2 Vdc (IC = 8 Adc, VCE = 5 Vdc) Collector–Emitter Saturation Voltage VCE(sat) Vdc (IC = 8 Adc, IB = 0.8 Adc) — — 1.4 (IC = 16 Adc, IB = 3.2 Adc) — — 4 DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output THD % VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS hFE unmatch — 0.8 — ed (Matched pair hFE = 50 @ 5 A/5 V) hFE — 0.08 — matched Current Gain Bandwidth Product fT 4 — — MHz (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance Cob — — 500 pF (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2% PNP MJ21193 NPN MJ21194 6.5 8.0 6.0 VCE = 10 V 7.0 5.5 6.0 10V5V5.0 5.0 VCE = 5 V 4.0 4.5 3.0 4.0 2.0 3.5 TJ = 25°C 1.0 TJ = 25°C ftest = 1 MHz ftest = 1 MHz 3.0 0 0.1 1.0 10 0.1 1.0 10 IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS) Figure 1. Typical Current Gain Figure 2. Typical Current Gain Bandwidth Product Bandwidth Product fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz),

TYPICAL CHARACTERISTICS

PNP MJ21193 NPN MJ21194 1000 1000 TJ = 100°C TJ = 100°C 25°C 25°C 100 100 -25°C -25°C VCE = 20 V VCE = 20 V 10 10 0.1 1.0 10 100 0.1 1.0 10 100 IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V PNP MJ21193 NPN MJ21194 1000 1000 ° TJ = 100°CTJ = 100 C 25°C 25°C 100 100 -25°C -25°C VCE = 5 V VCE = 20 V 10 10 0.1 1.0 10 100 0.1 1.0 10 100 IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS) Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V PNP MJ21193 NPN MJ21194 30 35 I = 2 A 1.5ABIB = 2 A 30 1.5 A 201A1A0.5 A 15 0.5 A 5.0 5.0 TJ = 25°C TJ = 25°C0005.0 10 15 20 25 0 5.0 10 15 20 25 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Typical Output Characteristics Figure 8. Typical Output Characteristics IC, COLLECTOR CURRENT (A) hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN IC, COLLECTOR CURRENT (A) hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN, TYPICAL CHARACTERISTICS PNP MJ21193 NPN MJ21194 3.0 1.4 1.2 TJ = 25°C 2.5 TJ = 25°C 1.0 IC/IB = 10 2.0 IC/IB = 10 VBE(sat) 0.8 1.5 0.6 1.0 VBE(sat) 0.4 0.5 0.2 VCE(sat) VCE(sat) 0 0 0.1 1.0 10 100 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages PNP MJ21193 NPN MJ21194 10 10 TJ = 25°C TJ = 25°C VCE = 20 V (SOLID) 1.0 1.0 VCE = 5 V (DASHED) VCE = 20 V (SOLID) VCE = 5 V (DASHED) 0.1 0.1 0.1 1.0 10 100 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Typical Base–Emitter Voltage Figure 12. Typical Base–Emitter Voltage There are two limitations on the power handling ability of a transistor; average junction temperature and secondary 1 SEC breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. TC = 25°C 1.0 The data of Figure 13 is based on TJ(pk) = 200°C; TC is vari- able depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second break- down. 0.1 1.0 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area I , COLLECTOR CURRENT (AMPS)C V , BASE-EMITTER VOLTAGE (VOLTS)BE(on) SATURATION VOLTAGE (VOLTS) V , BASE-EMITTER VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS)BE(on), 10000 10000 TJ = 25°C Cib TJ = 25°C Cib 1000 Cob 1000 Cob f(test) = 1 MHz f(test) = 1 MHz 100 100 0.1 1.0 10 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJ21193 Typical Capacitance Figure 15. MJ21194 Typical Capacitance 1.2 1.1 1.0 0.9 0.8 0.7 0.6 10 100 1000 10000 100000 FREQUENCY (Hz) Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS SOURCE 50 Ω TOTAL HARMONIC AMPLIFIER DUT

DISTORTION ANALYZER

0.5 Ω 0.5 Ω 8.0 Ω

DUT

-50 V Figure 17. Total Harmonic Distortion Test Circuit C, CAPACITANCE (pF) T , TOTAL HARMONIC

HD

DISTORTION (%) C, CAPACITANCE (pF),

PACKAGE DIMENSIONS CASE 1–07 TO–204AA (TO–3) ISSUE Z A N NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

C Y14.5M, 1982.

–T– SEATING 2. CONTROLLING DIMENSION: INCH.

E PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

D 2 PL K

INCHES MILLIMETERS 0.13 (0.005) MTQMYMDIM MIN MAX MIN MAX A 1.550 REF 39.37 REF

U

–Y– B - 1.050 - 26.67VLC0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.092E0.055 0.070 1.40 1.77

GBG0.430 BSC 10.92 BSC H1H0.215 BSC 5.46 BSC

K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC –Q– N - 0.830 - 21.08 Q 0.151 0.165 3.84 4.19 0.13 (0.005) MTYMU1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR,

Notes

, ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

NORTH AMERICA Literature Fulfillment: CENTRAL/SOUTH AMERICA: Literature Distribution Center for ON Semiconductor Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) P.O. Box 5163, Denver, Colorado 80217 USA Email: ONlit–email is hidden Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Toll–Free from Mexico: Dial 01–800–288–2872 for Access – Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada then Dial 866–297–9322 Email: email is hidden Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) N. American Technical Support: 800–282–9855 Toll Free USA/Canada Toll Free from Hong Kong & Singapore: 001–800–4422–3781 EUROPE: LDC for ON Semiconductor – European Support Email: ONlit–email is hidden German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET) Email: ONlit–email is hidden JAPAN: ON Semiconductor, Japan Customer Focus Center French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Email: ONlit–email is hidden Phone: 81–3–5740–2700 English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: email is hidden Email: email is hidden ON Semiconductor Website: http://onsemi.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 For additional information, please contact your local *Available from Germany, France, Italy, UK, Ireland Sales Representative. http://onsemi.com MJ21193/D]
15

Similar documents

Order this document SEMICONDUCTOR TECHNICAL DATA by MHW916/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MHW916/D The RF Line Designed specifically for the European Digital Extended Group Special Mobile (GSM) Base Station applications in the 925–960 MHz frequency range. MHW916 operates from a 26 Volt supply and requires 15.5 dBm of RF input power. • S
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B8A120A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B8A120A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output 8.0 AMP, 1200 VOLT inverter and brake transistor/diode in a single convenient package. T
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B30A60B/D Motorola Preferred Device Integrated Power Stage for 3.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B30A60B/D Motorola Preferred Device Integrated Power Stage for 3.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output inverter and brake transistor/diode in a single convenient package. The output 30 AMP, 6
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B20A60A/D Motorola Preferred Device Integrated Power Stage for 2.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B20A60A/D Motorola Preferred Device Integrated Power Stage for 2.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output 20 AMP, 600 VOLT inverter and brake transistor/diode in a single convenient package. The
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B16A120B/D Motorola Preferred Device Integrated Power Stage for 3.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B16A120B/D Motorola Preferred Device Integrated Power Stage for 3.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output 16 AMP, 1200 VOLT inverter and brake transistor/diode in a single convenient package. T
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B15A60A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B15A60A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives This module integrates a 3-phase input rectifier bridge, 3-phase output 15 AMP, 600 VOLT inverter and brake transistor/diode in a single convenient package. The
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B12A120A/D Motorola Preferred Device Integrated Power Stage for 2.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B12A120A/D Motorola Preferred Device Integrated Power Stage for 2.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output inverter and brake transistor/diode in a single convenient package. The output 12 AMP,
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A5S120DC3/D Integrated Power Stage for 1.0 hp Motorola Preferred Device 460 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A5S120DC3/D Integrated Power Stage for 1.0 hp Motorola Preferred Device 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 5.0 AMP, 1200 VOLT des
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A30E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A30E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 30 AMP, 600 VOLT designed for
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A25S120DC3/D Integrated Power Stage for 5.0 hp Motorola Preferred Device 460 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A25S120DC3/D Integrated Power Stage for 5.0 hp Motorola Preferred Device 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 25 AMP, 1200 VOLT des
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A20E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A20E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 20 AMP, 600 VOLT designed for
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A15S120DC3/D Integrated Power Stage for 3.0 hp Motorola Preferred Device 460 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A15S120DC3/D Integrated Power Stage for 3.0 hp Motorola Preferred Device 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 15 AMP, 1200 VOLT des
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A15A60A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A15A60A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives The MHPM7A15A60A module integrates a 3-phase input rectifier bridge, 15 AMP, 600 VOLT 3-phase output inverter, brake transistor/diode, current sense resistor an
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10S120DC3/D Integrated Power Stage for 2.0 hp Motorola Preferred Device 460 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10S120DC3/D Integrated Power Stage for 2.0 hp Motorola Preferred Device 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 10 AMP, 1200 VOLT des
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 10 AMP, 600 VOLT designed for
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B5A120D/D Integrated Power Stage for 460 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B5A120D/D Integrated Power Stage Motorola Preferred Devices for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 1.0, 2.0 and 3.0 hp motor drive applications. The inverter 5.
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B20E60D3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B20E60D3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drives This module integrates a 3–phase inverter and 3–phase rectifier in a single convenient package. It is designed for 2.0 hp motor drive 20 AMP, 600 VOLT applica
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10N120/D Integrated Power Stage for 460 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10N120/D Integrated Power Stage for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp motor drive applications. The inverter incorporates advanced Motoro
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B15E60D3/D Integrated Power Stage for 230 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B15E60D3/D Integrated Power Stage for 230 VAC Motor Drives Motorola Preferred Devices These modules integrate a 3–phase inverter and 3–phase rectifier in a single convenient package. They are designed for 0.5, 1.0, and 1.5 hp motor drive appli
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10A60D/D Motorola Preferred Devices Integrated Power Stage for 230 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10A60D/D Motorola Preferred Devices Integrated Power Stage for 230 VAC Motor Drives 10, 20 AMP, 600 V These modules integrate a 3–phase inverter in a single convenient package. HYBRID POWER MODULES They are designed for 1.0 and 2.0 hp motor d
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60/D  N–Channel Enhancement–Mode Silicon Gate
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60/D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO–264 termination scheme to provide an enhanced and reliable high 40 A @ 90°C voltage–blocking cap
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60D/D  N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60D/D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264 40 A @ 90°C This Insulated Gate Bipolar Transistor (IGBT) is co–packaged 66 A @ 25°C with a soft recovery ultra–fast rectifier and uses an advance
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY30N60D/D  N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY30N60D/D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264 30 A @ 90°C This Insulated Gate Bipolar Transistor (IGBT) is co–packaged 50 A @ 25°C with a soft recovery ultra–fast rectifier and uses an advance
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1946/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1946/D The RF Line .designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance 30 W, 136–220 MHz Output Power = 30 Watts RF POWER Power Ga
Order this document The RF MOSFET Line 85 WATTS, 1.0 GHz N–Channel Enhancement–Mode Lateral MOSFET 28 VOLTS
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF185/D The RF MOSFET Line 85 WATTS, 1.0 GHz N–Channel Enhancement–Mode Lateral MOSFET 28 VOLTS LATERAL N–CHANNEL • High Gain, Rugged Device BROADBAND • Broadband Performance from HF to 1 GHz RF POWER MOSFET • Bottom Side Source Eliminates DC Isol
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF184/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF184/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen- cies to 1.0 GHz. The high gain and broadband performance of these devices 60 W, 1.0 GHz makes them idea
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF183/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF183/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen- cies to 1.0 GHz. The high gain and broadband performance of these devices 45 W, 1.0 GHz makes ithem ide
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF182/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF182/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz 30 W, 1.0 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common LATERAL N–CHANNEL Mode Inductance
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line N–Channel Enhancement Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line N–Channel Enhancement Mode MOSFET Designed for broadband commercial and military applications up to 400 MHz 100 W, 28 V, 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull N–CHANNEL conf
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes poss