Download: ON Semiconductor PNP MJ21193* Silicon Power Transistors NPN • Total Harmonic Distortion Characterized 16 AMPERE • High DC Current Gain – SILICON POWER

ON Semiconductor PNP MJ21193* Silicon Power Transistors NPN The MJ21193 and MJ21194 utilize Perforated Emitter technology MJ21194*

and are specifically designed for high power audio output, disk head *ON Semiconductor Preferred Device positioners and linear applications. • Total Harmonic Distortion Characterized 16 AMPERE

COMPLEMENTARY

• High DC Current Gain – SILICON POWER hFE = 25 Min @ IC = 8 Adc TRANSISTORS • Excellent Gain Linearity 250 VOLTS • High SOA: 2.5 A, 80 V, 1 Second 250 WATTS MAXIMUM RATINGS Sym- Rating bol Value Unit Collector–Emitter Voltage VCEO 250 Vdc Collector–Base Voltage VCBO 400 Vdc CASE 1–07 Emitter–Base Voltage VEBO 5 Vdc TO–204AA Collector–Emitter Voltage – 1.5VV400 Vdc (TO–3)CEX Collector Current — Continuous IC 16 Adc Collector Current — Peak (1) 30 Base Current — Continuous IB 5 Adc Total Power Dissipation @ TC = 25°C PD 250 Watts Derate Above 25°C 1.43 W/°C Operating and Storage Junction Temperature Range TJ, –65 to °C Tstg +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.7 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage VCEO(sus) 250 — — Vdc (IC = 100 mAdc, IB = 0) Collector Cutoff Current ICEO — — 100 µAdc (VCE = 200 Vdc, IB = 0) (1) Pulse Test: Pulse Width = 5 µs, Duty Cycle ≤10%. (continued) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: March, 2001 – Rev. 3 MJ21193/D, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS Emitter Cutoff Current IEBO — — 100 µAdc (VCE = 5 Vdc, IC = 0) Collector Cutoff Current ICEX — — 100 µAdc (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward IS/b Adc Biased 5 — — (VCE = 50 Vdc, t = 1 s (non–repetitive) 2.5 — — (VCE = 80 Vdc, t = 1 s (non–repetitive) ON CHARACTERISTICS DC Current Gain hFE 75 (IC = 8 Adc, VCE = 5 Vdc) 25 — (IC = 16 Adc, IB = 5 Adc) 8 — Base–Emitter On Voltage VBE(on) — — 2.2 Vdc (IC = 8 Adc, VCE = 5 Vdc) Collector–Emitter Saturation Voltage VCE(sat) Vdc (IC = 8 Adc, IB = 0.8 Adc) — — 1.4 (IC = 16 Adc, IB = 3.2 Adc) — — 4 DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output THD % VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS hFE unmatch — 0.8 — ed (Matched pair hFE = 50 @ 5 A/5 V) hFE — 0.08 — matched Current Gain Bandwidth Product fT 4 — — MHz (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance Cob — — 500 pF (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2% PNP MJ21193 NPN MJ21194 6.5 8.0 6.0 VCE = 10 V 7.0 5.5 6.0 10V5V5.0 5.0 VCE = 5 V 4.0 4.5 3.0 4.0 2.0 3.5 TJ = 25°C 1.0 TJ = 25°C ftest = 1 MHz ftest = 1 MHz 3.0 0 0.1 1.0 10 0.1 1.0 10 IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS) Figure 1. Typical Current Gain Figure 2. Typical Current Gain Bandwidth Product Bandwidth Product fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz),

TYPICAL CHARACTERISTICS

PNP MJ21193 NPN MJ21194 1000 1000 TJ = 100°C TJ = 100°C 25°C 25°C 100 100 -25°C -25°C VCE = 20 V VCE = 20 V 10 10 0.1 1.0 10 100 0.1 1.0 10 100 IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V PNP MJ21193 NPN MJ21194 1000 1000 ° TJ = 100°CTJ = 100 C 25°C 25°C 100 100 -25°C -25°C VCE = 5 V VCE = 20 V 10 10 0.1 1.0 10 100 0.1 1.0 10 100 IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS) Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V PNP MJ21193 NPN MJ21194 30 35 I = 2 A 1.5ABIB = 2 A 30 1.5 A 201A1A0.5 A 15 0.5 A 5.0 5.0 TJ = 25°C TJ = 25°C0005.0 10 15 20 25 0 5.0 10 15 20 25 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Typical Output Characteristics Figure 8. Typical Output Characteristics IC, COLLECTOR CURRENT (A) hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN IC, COLLECTOR CURRENT (A) hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN, TYPICAL CHARACTERISTICS PNP MJ21193 NPN MJ21194 3.0 1.4 1.2 TJ = 25°C 2.5 TJ = 25°C 1.0 IC/IB = 10 2.0 IC/IB = 10 VBE(sat) 0.8 1.5 0.6 1.0 VBE(sat) 0.4 0.5 0.2 VCE(sat) VCE(sat) 0 0 0.1 1.0 10 100 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages PNP MJ21193 NPN MJ21194 10 10 TJ = 25°C TJ = 25°C VCE = 20 V (SOLID) 1.0 1.0 VCE = 5 V (DASHED) VCE = 20 V (SOLID) VCE = 5 V (DASHED) 0.1 0.1 0.1 1.0 10 100 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Typical Base–Emitter Voltage Figure 12. Typical Base–Emitter Voltage There are two limitations on the power handling ability of a transistor; average junction temperature and secondary 1 SEC breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. TC = 25°C 1.0 The data of Figure 13 is based on TJ(pk) = 200°C; TC is vari- able depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second break- down. 0.1 1.0 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area I , COLLECTOR CURRENT (AMPS)C V , BASE-EMITTER VOLTAGE (VOLTS)BE(on) SATURATION VOLTAGE (VOLTS) V , BASE-EMITTER VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS)BE(on), 10000 10000 TJ = 25°C Cib TJ = 25°C Cib 1000 Cob 1000 Cob f(test) = 1 MHz f(test) = 1 MHz 100 100 0.1 1.0 10 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJ21193 Typical Capacitance Figure 15. MJ21194 Typical Capacitance 1.2 1.1 1.0 0.9 0.8 0.7 0.6 10 100 1000 10000 100000 FREQUENCY (Hz) Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS SOURCE 50 Ω TOTAL HARMONIC AMPLIFIER DUT

DISTORTION ANALYZER

0.5 Ω 0.5 Ω 8.0 Ω

DUT

-50 V Figure 17. Total Harmonic Distortion Test Circuit C, CAPACITANCE (pF) T , TOTAL HARMONIC

HD

DISTORTION (%) C, CAPACITANCE (pF),

PACKAGE DIMENSIONS CASE 1–07 TO–204AA (TO–3) ISSUE Z A N NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

C Y14.5M, 1982.

–T– SEATING 2. CONTROLLING DIMENSION: INCH.

E PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

D 2 PL K

INCHES MILLIMETERS 0.13 (0.005) MTQMYMDIM MIN MAX MIN MAX A 1.550 REF 39.37 REF

U

–Y– B - 1.050 - 26.67VLC0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.092E0.055 0.070 1.40 1.77

GBG0.430 BSC 10.92 BSC H1H0.215 BSC 5.46 BSC

K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC –Q– N - 0.830 - 21.08 Q 0.151 0.165 3.84 4.19 0.13 (0.005) MTYMU1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR,

Notes

, ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

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