Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B8A120A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives

Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B8A120A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output 8.0 AMP, 1200 VOLT inverter and brake transistor/diode in a single convenient package. The output HYBRID POWER MODULE inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free–wheeling diodes to give optimal dynamic performance. It has been configured for use as a three–phase motor drive module or for many other power switching applications. The top connect...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B8A120A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives

This module integrates a 3–phase input rectifier bridge, 3–phase output 8.0 AMP, 1200 VOLT inverter and brake transistor/diode in a single convenient package. The output HYBRID POWER MODULE inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free–wheeling diodes to give optimal dynamic performance. It has been configured for use as a three–phase motor drive module or for many other power switching applications. The top connector pins have been designed for easy interfacing to the user’s control board. • Short Circuit Rated 10 µs @ 25°C • Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) • Convenient Package Outline • UL Recognized and Designed to Meet VDE • Access to Positive and Negative DC Bus PLASTIC PACKAGE CASE 440-01, Style 1 MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit INPUT RECTIFIER BRIDGE Repetitive Peak Reverse Voltage VRRM 1200 V Average Output Rectified Current (1) IO 8.0 A Peak Non-repetitive Surge Current IFSM 200 A OUTPUT INVERTER IGBT Reverse Voltage VCES 1200 V Gate-Emitter Voltage VGES ± 20 V Continuous IGBT Collector Current IC 8.0 A Peak IGBT Collector Current – (PW = 1.0 ms) (2) IC(pk) 16 A Continuous Free-Wheeling Diode Current IF 8.0 A Peak Free-Wheeling Diode Current – (PW = 1.0 ms) (2) IF(pk) 16 A IGBT Power Dissipation PD 50 W Free-Wheeling Diode Power Dissipation PD 30 W IGBT Junction Temperature Range TJ – 40 to +125 °C Free-Wheeling Diode Junction Temperature Range TJ – 40 to +125 °C (1) 1 cycle = 50 or 60 Hz (2) 1 ms = 1.0% duty cycle Preferred devices are Motorola recommended choices for future use and best overall value. MMoOtoTroOla,R InOc.L 1A995 MHPM7B8A120A, MAXIMUM DEVICE RATINGS (continued) (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit BRAKE CIRCUIT IGBT Reverse Voltage VCES 1200 V Gate-Emitter Voltage VGES ± 20 V Continuous IGBT Collector Current IC 8.0 A Peak IGBT Collector Current (PW = 1.0 ms) (2) IC(pk) 16 A IGBT Power Dissipation PD 50 W Diode Reverse Voltage VRRM 1200 V Continuous Output Diode Current IF 8.0 A Peak Output Diode Current (PW = 1.0 ms) (2) IF(pk) 16 A TOTAL MODULE Isolation Voltage – (47–63 Hz, 1.0 Minute Duration) VISO 2500 VAC Ambient Operating Temperature Range TA – 40 to + 85 °C Operating Case Temperature Range TC – 40 to + 90 °C Storage Temperature Range Tstg – 40 to +150 °C Mounting Torque – 6.0 lb–in ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit INPUT RECTIFIER BRIDGE Reverse Leakage Current (VRRM = 1200 V) IR – 10 50 µA Forward Voltage (IF = 8.0 A) VF – 1.05 1.5 V Thermal Resistance (Each Die) RθJC – – 2.9 °C/W OUTPUT INVERTER Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) IGES – – ± 20 µA Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) ICES TJ = 25°C – – 100 µA TJ = 125°C – – 500 µA Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) VGE(th) 4.0 6.0 8.0 V Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V(BR)CES 1200 1300 – V Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 8.0 A) VCE(SAT) – 2.5 3.5 V Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1.0 MHz) Cies – 1000 – pF Input Gate Charge (VCE = 600 V, IC = 8.0 A, VGE = 15 V) QT – 75 – nC Fall Time – Inductive Load tfi (VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω) – 350 500 ns Turn-On Energy E(on) – – 1.0 mJ (VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω) Turn-Off Energy E(off) – – 1.0 mJ (VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω) Diode Forward Voltage (IF = 8.0 A, VGE = 0 V) VF – 1.6 2.2 V Diode Reverse Recovery Time trr (IF = 8.0 A, V = 600 V, dI/dt = 50 A/µs) – 140 200 ns Diode Stored Charge (IF = 8.0 A, V = 600 V, di/dt = 50 A/µs) Qrr – – 900 nC Thermal Resistance – IGBT (Each Die) RθJC – – 2.2 °C/W Thermal Resistance – Free-Wheeling Diode (Each Die) RθJC – – 3.7 °C/W (2) 1.0 ms = 1.0% duty cycle MHPM7B8A120A MOTOROLA, ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit BRAKE CIRCUIT Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) IGES – – ± 20 µA Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) ICES TJ = 25°C – – 100 µA TJ = 125°C – – 500 µA Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) VGE(th) 4.0 6.0 8.0 V Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V(BR)CES 1200 1300 – V Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 8.0 A) VCE(SAT) – 2.5 3.5 V Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies – 1000 – pF Input Gate Charge (VCE = 600 V, IC = 8.0 A, VGE = 15 V) QT – 75 – nC Fall Time – Inductive Load tfi (VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω) – 350 500 ns Turn-On Energy E(on) (VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω) – – 1.0 mJ Turn-Off Energy E(off) – (VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω) – 1.0 mJ Diode Forward Voltage (IF = 8.0 A) VF – 1.6 2.2 V Diode Reverse Leakage Current IR – – 50 µA Thermal Resistance – IGBT RθJC – – 2.2 °C/W Thermal Resistance – Diode RθJC – – 3.7 °C/W MOTOROLA MHPM7B8A120A,

Figure 1. Integrated Power Stage Schematic MHPM7B8A120A MOTOROLA

1 7 P1 P2 Q1 Q3 Q5 D1 9 11 D3 13 D5 G1 G3 G5 E1 E3 E5 8 10 12 U 20 24RV19

B

23 S 21 W 18 22 T Q7 Q2 Q4 Q6 15 16 17 14 D2 D4 D6 G7 G2 G4 G6 N1 N2 25 6

DEVICE INTEGRATION

NC 2 NC 3 These pins are physical = PIN NUMBER IDENTIFICATION terminations but not 3–Phase 3–Phase NC 4 connected internally. BrakeInput IGBT/ Output Rectifier IGBT/Diode 5 DiodeNC Bridge Bridge,

Typical Characteristics

16 16 12 12 T = 125°C 25°C TJ = 125°C 25°CJ88440000.5 1.0 1.501234VF, FORWARD VOLTAGE (V) VF, FORWARD VOLTAGE (V)

Figure 2. Input Bridge Forward Current IF versus Figure 3. Output Inverter Forward Current IF Forward Voltage VF versus Forward Voltage VF

1000 25 VGE = 18 V TJ = 25°C TJ = 125°C 15 V20 trr 100 25°C 15 12 V 10 TJ = 125°C I 5rr 25°C9V–di/dt = 50 A/µs100246810 1204812 16 20 IF, FORWARD CURRENT (A) VCE, COLLECTOR–EMITTER VOLTAGE (V)

Figure 4. Output Inverter Reverse Recovery trr, Irr Figure 5. Output Inverter Collector Currrent IC

versus Forward Current IF versus Collector–Emitter Voltage VCE 25 10 VGE = 18 V IC = 4A8A16 A TJ = 125°C TJ = 25°C 15 V 20 8 15 612 V 104529V0004812 16 20 8 10 12 14 16 18 VCE, COLLECTOR–EMITTER VOLTAGE (V) VGE, GATE–EMITTER VOLTAGE (V)

Figure 6. Ouput Inverter Collector Current IC Figure 7. Inverter Collector–Emitter Voltage VCE

versus Collector–Emitter Voltage VCE versus Gate–Emitter Voltage VGE

MOTOROLA MHPM7B8A120A

IC, COLLECTOR CURRENT (A) PEAK REVERSE RECOVERY CURRENT Ir r (A) I F , FORWARD CURRENT (A) REVERSE RECOVERY TIMEtrr(ns) V , COLLECTOR-EMITTER VOLTAGE (V) I C , COLLECTOR CURRENT (A) I F , FORWARD CURRENT (A)CE,

Typical Characteristics

900 18 10000 TJ = 25°C VCE = 600 V 800 IC = 8.0 A 16 VGE = 15 V 400 V RG = 10 Ω700 14 600 V 500 V TJ =125°C600 600 V 12 1000 500 V 500 10 400 V 400 8 25°C 300 6 100 200 4 10020010 0 10 20 30 40 50 60 70 1 10 QG, GATE CHARGE (nC) IC, COLLECTOR CURRENT (A)

Figure 8. Gate–to–Emitter Voltage versus Figure 9. Inverter Switching Energy E(off) versus Gate Charge Collector Current IC

10000 10000 VCE = 600 V VCE = 600 V VGE = 15 V VGE = 15 V IC = 8.0 A RG = 10 Ω TJ = 25°C TJ =125°C 1000 1000 t 25°C (off) tf td 100 100 10 100 1000 1 10 RG, GATE RESISTANCE (Ω) IC, COLLECTOR CURRENT (A)

Figure 10. Inverter Switching Energy E(off) versus Figure 11. Inverter Switching Time tf, td, t(off) Gate Resistance RG versus Collector Current IC

10000 10000 VCE = 600 V VCE = 600 V VGE = 15 V VGE = 15 V RG = 10 Ω IC = 8.0 A TJ = 125°C TJ = 25°C t(off) td t 1000 (off) 1000 tf tf td 100 100 1 10 10 100 1000 IC, COLLECTOR CURRENT (A) RG, GATE RESISTANCE (Ω)

Figure 12. Inverter Switching Time tf, td, t(off) Figure 13. Inverter Switching Time tf,td, t(off)

versus Collector Current IC versus Gate Resistance RG

MHPM7B8A120A MOTOROLA

SWITCHING TIME (ns) SWITCHING ENERGY ( µ J) VCE , COLLECTOR-EMITTER VOLTAGE (V) V , GATE VOLTAGE (V) SWITCHING TIME (ns) GESWITCHING TIME (ns) SWITCHING ENERGY (µ J),

Typical Characteristics

10000 1000 VCE = 600 V VCE = 600 V VGE = 15 V VGE = 15 V IC = 8.0 A RG = 10 Ω TJ = 125°C t(off) td 1000 100 TJ =125°C tf 25°C 100 10 10 100 1000 1 10 RG, GATE RESISTANCE (Ω) IC, COLLECTOR CURRENT (A)

Figure 14. Inverter Switching Time tf, td, t(off) Figure 15. Inverter Switching Time tr

versus Gate Resistance RG versus Collector Current IC 1000 10000 VCE = 600 V VGE = 15 V IC = 8.0 A Cies TJ =125°C 25°C 100 Coes Cres 10 10 10 100 1000 0 20 40 60 80 100 120 140 160 180 200 RG, GATE RESISTANCE (Ω) VCE, COLLECTOR–EMITTER VOLTAGE (V)

Figure 16. Inverter Switching Time tr Figure 17. Output Inverter Capacitance versus

versus Gate Resistance RG Collector Voltage 100 1.0

DIODE IGBT

10 0.1 1.0 0.01 +VGE = 15 V –VGE = 0 V RG = 150 Ω TJ = 25°C0.1 0.001 0 400 800 1200 1600 2000 1 10 100 1000 VCE, COLLECTOR–EMITTER VOLTAGE (V) t, TIME (ms)

Figure 18. Output Inverter Reversed Biased Figure 19. Transient Thermal Resistance Safe Operating Area MOTOROLA MHPM7B8A120A

IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) SWITCHING TIME (ns) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) CAPACITANCE (pF) SWITCHING TIME (ns),

PACKAGE DIMENSIONS E C VK AB AE AA

9 PL

AC AF

3 PL

AD DETAIL Z A Q N AH 2 PL G 2 PL W 1 17

2 PL T

L MSRB

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 25 18 2. CONTROLLING DIMENSION: MILLIMETER.

Y AG X 3. LEAD LOCATION DIMENSIONS (ie: M, B. AA...)4 PL 4 PL ARE TO THE CENTER OF THE LEAD. P

MILLIMETERS INCHES

U DIM MIN MAX MIN MAX

A 97.54 98.55 3.840 3.880 B 52.45 53.47 2.065 2.105 C 14.60 15.88 0.575 0.625 D 0.43 0.84 0.017 0.033

HJE10.80 12.06 0.425 0.47525 PL

7 PL F 0.94 1.35 0.037 0.053 G 1.60 2.21 0.063 0.087 H 8.58 9.19 0.338 0.362 J 0.30 0.71 0.012 0.028 K 18.80 20.57 0.74 0.81 L 19.30 20.32 0.760 0.800 M 38.99 40.26 1.535 1.585 N 9.78 11.05 0.385 0.435 P 82.55 83.57 3.250 3.290 Q 4.01 4.62 0.158 0.182 R 26.42 27.43 1.040 1.080

D S 12.06 12.95 0.475 0.515

T 4.32 5.33 0.170 0.210

F U 86.36 87.38 3.400 3.440

V 14.22 15.24 0.560 0.600 W 7.62 8.13 0.300 0.320 X 6.55 7.16 0.258 0.282

DETAILZY2.49 3.10 0.098 0.122

AA 2.24 2.84 0.088 0.112 AB 7.32 7.92 0.288 0.312 STYLE 1: AC 4.78 5.38 0.188 0.212 PIN 1. P1 PIN 6. N2 PIN 11. G3 PIN 16. G2 PIN 21. B AD 8.58 9.19 0.338 0.362 2. T– 7. P2 12. K5 17. G4 22. T AE 6.05 6.65 0.238 0.262 3. T+ 8. K1 13. G5 18. W 23. S AF 4.78 5.38 0.188 0.212 4. I+ 9. G1 14. G6 19. V 24. R AG 69.34 70.36 2.730 2.770 5. I– 10. K3 15. G7 20. U 25. N1 AH ––– 5.08 ––– 0.200

CASE 440-01 ISSUE O MHPM7B8A120A MOTOROLA

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

MOTOROLA MHPM7B8A120A

, How to reach us: USA/EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden –TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MHPM7B8A120A ◊ CODELINE TO BE PLACED HERE MHPMMO7TBO8AR1O2L0A/D

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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line N–Channel Enhancement Mode MOSFET Designed for broadband commercial and military applications up to 400 MHz 100 W, 28 V, 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull N–CHANNEL conf
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes poss
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes pos
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes poss