Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B16A120B/D Motorola Preferred Device Integrated Power Stage for 3.0 hp Motor Drives

Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B16A120B/D Motorola Preferred Device Integrated Power Stage for 3.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output 16 AMP, 1200 VOLT inverter and brake transistor/diode in a single convenient package. The output HYBRID POWER MODULE inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free–wheeling diodes to give optimal dynamic performance. It has been configured for use as a three–phase motor drive module or for many other power switching applications. The top connect...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B16A120B/D Motorola Preferred Device Integrated Power Stage for 3.0 hp Motor Drives

This module integrates a 3–phase input rectifier bridge, 3–phase output 16 AMP, 1200 VOLT inverter and brake transistor/diode in a single convenient package. The output HYBRID POWER MODULE inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free–wheeling diodes to give optimal dynamic performance. It has been configured for use as a three–phase motor drive module or for many other power switching applications. The top connector pins have been designed for easy interfacing to the user’s control board. • Short Circuit Rated 10 µs @ 25°C • Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) • Convenient Package Outline • UL Recognized and Designed to Meet VDE • Access to Positive and Negative DC Bus PLASTIC PACKAGE CASE 440A–01, Style 1 MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit INPUT RECTIFIER BRIDGE Repetitive Peak Reverse Voltage VRRM 1200 V Average Output Rectified Current (1) IO 16 A Peak Non-repetitive Surge Current IFSM 330 A OUTPUT INVERTER IGBT Reverse Voltage VCES 1200 V Gate-Emitter Voltage VGES ± 20 V Continuous IGBT Collector Current IC 16 A Peak IGBT Collector Current – (PW = 1.0 ms) (2) IC(pk) 32 A Continuous Free-Wheeling Diode Current IF 16 A Peak Free-Wheeling Diode Current – (PW = 1.0 ms) (2) IF(pk) 32 A IGBT Power Dissipation PD 75 W Free-Wheeling Diode Power Dissipation PD 40 W IGBT Junction Temperature Range TJ – 40 to +125 °C Free-Wheeling Diode Junction Temperature Range TJ – 40 to +125 °C (1) 1 cycle = 50 or 60 Hz (2) 1 ms = 1.0% duty cycle Preferred devices are Motorola recommended choices for future use and best overall value. MoMtoOroTlaO, InRc.O 1L99A5 MHPM7B16A120B, MAXIMUM DEVICE RATINGS (continued) (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit BRAKE CIRCUIT IGBT Reverse Voltage VCES 1200 V Gate-Emitter Voltage VGES ± 20 V Continuous IGBT Collector Current IC 16 A Peak IGBT Collector Current (PW = 1.0 ms) (2) IC(pk) 32 A IGBT Power Dissipation PD 75 W Diode Reverse Voltage VRRM 1200 V Continuous Output Diode Current IF 16 A Peak Output Diode Current (PW = 1.0 ms) (2) IF(pk) 32 A TOTAL MODULE Isolation Voltage – (47–63 Hz, 1.0 Minute Duration) VISO 2500 VAC Ambient Operating Temperature Range TA – 40 to + 85 °C Operating Case Temperature Range TC – 40 to + 90 °C Storage Temperature Range Tstg – 40 to +150 °C Mounting Torque – 6.0 lb–in ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit INPUT RECTIFIER BRIDGE Reverse Leakage Current (VRRM = 1200 V) IR – 10 50 µA Forward Voltage (IF = 16 A) VF – 1.05 1.5 V Thermal Resistance (Each Die) RθJC – – 2.7 °C/W OUTPUT INVERTER Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) IGES – – ± 20 µA Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) ICES TJ = 25°C – – 100 µA TJ = 125°C – – 2.0 mA Gate-Emitter Threshold Voltage (VCE = VGE, IC = 10 mA) VGE(th) 4.0 6.0 8.0 V Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V(BR)CES 1200 1300 – V Collector-Emitter Saturation Voltage (IC = 16 A, VGE = 15 V) VCE(SAT) – 2.4 3.5 V Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies – 2700 – pF Input Gate Charge (VCE = 600 V, IC = 16 A, VGE = 15 V) QT – 100 – nC Fall Time – Inductive Load tfi (VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω) – 350 500 ns Turn-On Energy E(on) – – 2.5 mJ (VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω) Turn-Off Energy E(off) – – 2.5 mJ (VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω) Diode Forward Voltage (IF = 16 A, VGE = 0 V) VF – 1.7 2.2 V Diode Reverse Recovery Time trr (IF = 16 A, V = 600 V, dI/dt = 100 A/µs) – 170 200 ns Diode Stored Charge (IF = 16 A, V = 400 V, di/dt = 100 A/µs) Qrr – 850 1000 nC Thermal Resistance – IGBT (Each Die) RθJC – – 1.4 °C/W Thermal Resistance – Free-Wheeling Diode (Each Die) RθJC – – 2.7 °C/W (2) 1.0 ms = 1.0% duty cycle MHPM7B16A120B MOTOROLA, ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit BRAKE CIRCUIT Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) IGES – – ± 20 µA Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) ICES TJ = 25°C – – 100 µA TJ = 125°C – – 2.0 mA Gate-Emitter Threshold Voltage (VCE = VGE, IC = 10 mA) VGE(th) 4.0 6.0 8.0 V Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V(BR)CES 1200 1300 – V Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 16 A) VCE(SAT) – 2.4 3.5 V Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies – 2700 – pF Input Gate Charge (VCE = 600 V, IC = 16 A, VGE = 15 V) QT – 100 – nC Fall Time – Inductive Load tfi (VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω) – 350 500 ns Turn-On Energy E(on) (VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω) – – 2.5 mJ Turn-Off Energy E(off) (VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω) – – 2.5 mJ Diode Forward Voltage (IF = 16 A) VF – 1.7 2.2 V Diode Reverse Leakage Current (VR = 1200 V) IR – – 50 µA Thermal Resistance – IGBT RθJC – – 1.4 °C/W Thermal Resistance – Diode RθJC – – 2.7 °C/W MOTOROLA MHPM7B16A120B,

Figure 1. Integrated Power Stage Schematic MHPM7B16A120B MOTOROLA

1 7 P1 P2 Q1 Q3 Q5 D1 11 D3 13 D59 G1 G3 G5 E1 E3 E5 8 10 12 U 20 24RV19

B

23 S 21 W 18 22 T Q7 Q2 Q4 Q6 15 16 17 14 D2 D4 D6 G7 G2 G4 G6 N1 N2 25 6

DEVICE INTEGRATION

NC 2 NC 3 These pins are physical = PIN NUMBER IDENTIFICATION terminations but not 3–Phase 3–Phase NC 4 connected internally. BrakeInput IGBT/ Output Rectifier IGBT/Diode 5 DiodeNC Bridge Bridge,

Typical Characteristics

50 50 TJ = 25°C VGE = 18 V 15 V TJ = 125°C VGE = 18 V 15 V45 12 V 45 40 40 12 V 35 35 30 30 25 25 20 20 15 159V9V10 105500012345012345VCE, COLLECTOR–EMITTER VOLTAGE (V) VCE, COLLECTOR–EMITTER VOLTAGE (V)

Figure 2. Output Inverter Collector Current IC Figure 3. Output Inverter Collector Current IC

versus Collector–Emitter Voltage VCE versus Collector–Emitter Voltage VCE 10 1000 IC = 8 A TJ = 25°C VCE = 600 V VGE = 15V8RG = 10 Ω 16 A TJ = 25°C t 32 A (off) tf td 0 100 8 10 12 14 16 18246810 12 14 16 18 VGE, GATE–EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

Figure 4. Inverter Collector–Emitter Voltage VCE Figure 5. Inverter Switching Time td, tf, t(off)

versus Gate–Emitter Voltage VGE versus Collector Current IC 10000 10000 VCE = 600 V VCE = 600 V VGE = 15 V VGE = 15 V RG = 10Ωtt(off) IC = 16 A (off) TJ = 125°C TJ = 25°C td 1000 1000 tf td tf 100 100246810 12 14 16 18 10 100 1000 IC, COLLECTOR CURRENT (A) RG, GATE RESISTANCE (Ω)

Figure 6. Inverter Switching Time td, tf, t(off) Figure 7. Inverter Switching Time td, tf, t(off)

versus Collector Current IC versus Gate Resistance RG

MOTOROLA MHPM7B16A120B

SWITCHING TIME (ns) VCE, COLLECTOR–EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) SWITCHING TIME (ns) IC, COLLECTOR CURRENT (A),

Typical Characteristics

10000 80 VCE = 600 V VCE = 600 V VGE = 15 V 70 VGE = 15 V IC = 16 A t(off) RG = 10 Ω TJ = 125°C td 60 50 TJ = 125°C 1000 40 t 25°Cf 30 100 0 10 100 1000246810 12 14 16 18 RG, GATE RESISTANCE (Ω) IC, COLLECTOR CURRENT (A)

Figure 8. Inverter Switching Time td, tf, t(off) Figure 9. Inverter Switching Time tr versus

versus Gate Resistance RG Collector Current IC 1000 10000 VCE = 600 V VCE = 600 V VGE = 15 V VGE = 15 V TJ = 125°C IC = 16 A RG = 10 Ω TJ = 125°C 25°C 25°C 100 10 10 10 100 10000246810 12 14 16 18 RG, GATE RESISTANCE (Ω) IC, COLLECTOR CURRENT (A)

Figure 10. Inverter Switching Time tr versus Figure 11. Inverter Switching Energy E(off) Gate Resistance RG versus Collector Current IC

10000 900 18 VCE = 600 V 800 VGE = 15 V 500 V IC = 16 A 700 14 TJ = 125°C 600 400 V 600 V 12 500 10 400 8 25°C 300 6 200 4 100 2 10000010 100 1000 0 10 20 30 40 50 60 70 80 90 100 RG, GATE RESISTANCE (Ω) QG, GATE CHARGE (nC)

Figure 12. Inverter Switching Energy E(off) Figure 13. Gate–to–Emitter Voltage versus

versus Gate Resistance RG Gate Charge

MHPM7B16A120B MOTOROLA

SWITCHING ENERGY ( µ J) SWITCHING TIME (ns) SWITCHING TIME (ns) VCE, COLLECTOR–EMITTER VOLTAGE (V) SWITCHING ENERGY ( µ J) SWITCHING TIME (ns) VGE, GATE–EMITTER VOLTAGE (V),

Typical Characteristics

10000 50 Cies 40 Coes 20 TJ = 125°C 15 25°C C 10res 100020 40 60 80 100 120 140 160 180 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VCE, COLLECTOR–EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V)

Figure 14. Output Inverter Capacitance versus Figure 15. Input Bridge Forward Current IF Collector Voltage VCE versus Forward Voltage VF

50 1000 TJ = 125°C40 t 35 rr 25°C 30 TJ = 125°C 20 25°C TJ = 125°C 10 Irr 25°C15 –di/dt = 100 A/µs0100.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.830510 15 20 VF, FORWARD VOLTAGE (V) IF, FORWARD CURRENT (A)

Figure 16. Output Inverter Forward Current IF Figure 17. Output Inverter Reverse Recovery

versus Forward Voltage VF trr, Irr versus Forward Current IF 100 1

DIODE

10 0.1 IGBT 1 0.01 +VGE = 15 V –VGE = 0 V RG = 150 Ω TJ = 25°C 0.1 0.001 0 200 400 600 800 1000 1200 1400 1 10 100 1000 VCE, COLLECTOR–EMITTER VOLTAGE (V) t, TIME (ms)

Figure 18. Output Inverter Reversed Biased Safe Figure 19. Transient Thermal Resistance Operating Area MOTOROLA MHPM7B16A120B

IC, COLLECTOR CURRENT (A) IF, FORWARD CURRENT (A) CAPACITANCE (pF) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE PEAK REVERSE RECOVERY CURRENT Irr (A) I , FORWARD CURRENT (A) (NORMALIZED) REVERSE RECOVERY TIME trr (ns)

F

,

PACKAGE DIMENSIONS E C K AB AE AA

9 PL

AC AF

3 PL

AD A N AH V G 2 PL Q

2 PL 1 17

W

2 PL

L MSRB DETAIL Z Y

4 PL 25 18

AG X4 PL T P

NOTES:

U 1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. LEAD LOCATION DIMENSIONS (ie: M, G, AA...)

J ARE TO THE CENTER OF THE LEAD.H 25 PL

7 PL MILLIMETERS INCHES DIM MIN MAX MIN MAX A 97.54 98.55 3.840 3.880 B 62.74 63.75 2.470 2.510 C 14.60 15.88 0.575 0.625 D 0.56 0.97 0.022 0.038 E 10.80 12.06 0.425 0.475 F 0.81 1.22 0.032 0.048 G 1.60 2.21 0.063 0.087 H 8.58 9.19 0.338 0.362 J 0.56 0.97 0.022 0.038 K 18.80 20.57 0.740 0.810 L 22.86 23.88 0.900 0.940 M 46.23 47.24 1.820 1.860

D N 9.78 11.05 0.385 0.435P 82.55 83.57 3.250 3.290

Q 4.01 4.62 0.158 0.182

F R 26.42 27.43 1.040 1.080

S 12.06 12.95 0.475 0.515 T 4.32 5.33 0.170 0.210 U 86.36 87.38 3.400 3.440

DETAILZV14.22 15.24 0.560 0.600

W 7.62 8.13 0.300 0.320 X 6.55 7.16 0.258 0.282 STYLE 1: Y 2.49 3.10 0.098 0.122 PIN 1. P1 PIN 6. N2 PIN 11. G3 PIN 16. G2 PIN 21. B 2. T– 7. P2 12. K5 17. G4 22. T AA 2.24 2.84 0.088 0.112 3. T+ 8. K1 13. G5 18. W 23. S AB 7.32 7.92 0.288 0.312 4. I+ 9. G1 14. G6 19. V 24. R AC 4.78 5.38 0.188 0.212 5. I– 10. K3 15. G7 20. U 25. N1 AD 8.58 9.19 0.338 0.362 AE 6.05 6.65 0.238 0.262 AF 4.78 5.38 0.188 0.212 AG 69.34 70.36 2.730 2.770 AH ––– 5.08 ––– 0.200

CASE 440A–01 ISSUE O MHPM7B16A120B MOTOROLA

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

MOTOROLA MHPM7B16A120B

, How to reach us: USA/EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden –TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MHPM7B16A120B ◊ CODELINE TO BE PLACED HERE MHPM7MBO16TAO1R20OBL/DA

]
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes poss
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line N–Channel Enhancement–Mode .designed primarily for wideband large–signal output and driver stages up to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line N–Channel Enhancement–Mode .designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166W/D N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166W/D N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts