Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B15A60A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives

Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B15A60A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives This module integrates a 3-phase input rectifier bridge, 3-phase output 15 AMP, 600 VOLT inverter and brake transistor/diode in a single convenient package. The output HYBRID POWER MODULE inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free-wheeling diodes to give optimal dynamic performance. It has been configured for use as a three-phase motor drive module or for many other power switching applications. The top connector...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7B15A60A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives

This module integrates a 3-phase input rectifier bridge, 3-phase output 15 AMP, 600 VOLT inverter and brake transistor/diode in a single convenient package. The output HYBRID POWER MODULE inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free-wheeling diodes to give optimal dynamic performance. It has been configured for use as a three-phase motor drive module or for many other power switching applications. The top connector pins have been designed for easy interfacing to the user’s control board. • Short Circuit Rated 10 µs @ 25°C • Pin-to-Baseplate Isolation exceeds 2500 Vac (rms) • Convenient Package Outline • UL Recognized and Designed to Meet VDE • Access to Positive and Negative DC Bus PLASTIC PACKAGE CASE 440-01, Style 1 MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit INPUT RECTIFIER BRIDGE Repetitive Peak Reverse Voltage VRRM 600 V Average Output Rectified Current IO 15 A Peak Non-repetitive Surge Current — (1/2 Cycle) (1) IFSM 200 A OUTPUT INVERTER IGBT Reverse Voltage VCES 600 V Gate-Emitter Voltage VGES ± 20 V Continuous IGBT Collector Current IC 15 A Peak IGBT Collector Current — (PW = 1.0 ms) (2) IC(pk) 30 A Continuous Free-Wheeling Diode Current IF 15 A Peak Free-Wheeling Diode Current — (PW = 1.0 ms) (2) IF(pk) 30 A IGBT Power Dissipation PD 55 W Free-Wheeling Diode Power Dissipation PD 30 W IGBT Junction Temperature Range TJ – 40 to +125 °C Free-Wheeling Diode Junction Temperature Range TJ – 40 to +125 °C (1) 1 cycle = 50 or 60 Hz (2) 1.0 ms = 1.0% duty cycle Preferred devices are Motorola recommended choices for future use and best overall value. MMoOtoTroOla,R InOc.L 1A995 MHPM7B15A60A, MAXIMUM DEVICE RATINGS (continued) (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit BRAKE CIRCUIT IGBT Reverse Voltage VCES 600 V Gate-Emitter Voltage VGES ± 20 V Continuous IGBT Collector Current IC 15 A Peak IGBT Collector Current (PW = 1.0 ms) (2) IC(pk) 30 A IGBT Power Dissipation PD 55 W Diode Reverse Voltage VRRM 600 V Continuous Output Diode Current IF 15 A Peak Output Diode Current (PW = 1.0 ms) (2) IF(pk) 30 A TOTAL MODULE Isolation Voltage — (47–63 Hz, 1.0 Minute Duration) VISO 2500 VAC Ambient Operating Temperature Range TA – 40 to + 85 °C Operating Case Temperature Range TC – 40 to + 90 °C Storage Temperature Range Tstg – 40 to +150 °C Mounting Torque — 6.0 lb–in ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit INPUT RECTIFIER BRIDGE Reverse Leakage Current (VRRM = 600 V) IR — 10 50 µA Forward Voltage (IF = 15 A) VF — 1.05 1.5 V Thermal Resistance (Each Die) RθJC — — 2.9 °C/W OUTPUT INVERTER Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) IGES — — ± 20 µA Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) ICES TJ = 25°C — — 200 µA TJ = 125°C — — 2.0 mA Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) VGE(th) 4.0 6.0 8.0 V Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V(BR)CES 600 700 — V Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 15 A) VCE(SAT) — 2.7 3.5 V Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies — 950 — pF Input Gate Charge (VCE = 300 V, IC = 15 A, VGE = 15 V) QT — 75 — nC Fall Time — Inductive Load tfi (VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω) — 200 350 ns Turn-On Energy E(on) — — 1.0 mJ (VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω) Turn-Off Energy E(off) — — 1.0 mJ (VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω) Diode Forward Voltage (IF = 15 A, VGE = 0 V) VF — 1.5 2.0 V Diode Reverse Recovery Time trr (IF = 15 A, V = 400 V, dI/dt = 50 A/µs) — 140 200 ns Diode Stored Charge (IF = 15 A, V = 400 V, di/dt = 50 A/µs) Qrr — — 900 nC Thermal Resistance — IGBT (Each Die) RθJC — — 1.9 °C/W Thermal Resistance — Free-Wheeling Diode (Each Die) RθJC — — 3.7 °C/W (2) 1.0 ms = 1.0% duty cycle MHPM7B15A60A MOTOROLA, ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit BRAKE CIRCUIT Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) IGES — — ± 20 µA Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) (1) ICES TJ = 25°C — — 200 µA TJ = 125°C — — 2.0 mA Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) VGE(th) 4.0 6.0 8.0 V Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V(BR)CES 600 700 — V Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 15 A) (1) VCE(SAT) — 2.7 3.5 V Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies — 950 — pF Input Gate Charge (VCE = 300 V, IC = 15 A, VGE = 15 V) QT — 75 — nC Fall Time — Inductive Load tfi (VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω) — 200 350 ns Turn-On Energy E(on) (VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω) — — 1.0 mJ Turn-Off Energy E(off) (VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω) — — 1.0 mJ Diode Forward Voltage (IF = 15 A) VF — 1.5 2.0 V Diode Reverse Leakage Current IR — — 50 µA Thermal Resistance — IGBT RθJC — — 1.9 °C/W Thermal Resistance — Diode RθJC — — 3.7 °C/W (1) 1 cycle = 50 or 60 Hz. MOTOROLA MHPM7B15A60A,

Figure 1. Integrated Power Stage Schematic MHPM7B15A60A MOTOROLA

1 7 P1 P2 Q1 Q3 Q5 D1 9 11 D3 13 D5 G1 G3 G5 E1 E3 E5 8 10 12 U 20 24RV19

B

23 S 21 W 18 22 T Q7 Q2 Q4 Q6 15 16 17 14 D2 D4 D6 G7 G2 G4 G6 N1 N2 25 6

DEVICE INTEGRATION

NC 2 NC 3 These pins are physical = PIN NUMBER IDENTIFICATION terminations but not 3–Phase 3–Phase NC 4 connected internally. BrakeInput IGBT/ Output Rectifier IGBT/Diode 5 DiodeNC Bridge Bridge,

VGE

90%

L

I VC CE IC

RG VCE

90% VCE 10% 10% td(off) tf toff

Figure 2. Inductive Switching Time Test Circuit and Timing Chart Typical Characteristics

50 1.0 125°C 25°C D = 0.5 0.2 0.1 P(pk) 20 t1 RθJC(t) = r(t)(RθJC) t R 2θJC = 3.2°C/W 10 D Curves apply for power pulse train shown read time at t1 SINGLE PULSE TJ(pk)–TC = P(pk) RθJC(t) 0 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0.1 1.0 10 100 1000 VF, FORWARD VOLTAGE (V) t, TIME (ms)

Figure 3. Input Bridge Forward Current versus Figure 4. Input Rectifier Bridge Thermal Forward Voltage Response MOTOROLA MHPM7B15A60A

I F, FORWARD CURRENT (A) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED),

Typical Characteristics

50 50 25°C 125°C 20 V 12 V 10 V 15 V 40 40 30 30 20 208V10 107V00012345046810 VF, FORWARD VOLTAGE (V) VCE, COLLECTOR–EMITTER VOLTAGE (V)

Figure 5. Output Inverter Diode Forward Currrent Figure 6. Output Inverter Collector-Current

versus Forward Voltage versus Collector-Emitter Voltage 20 450 185A10 A 20 A TJ = 25°C 400 IC = 15 A 16 350 100 V 300 V 14 300 200 V 12 250 10 200 8 15064100 4 50200004812 16 20 0 10 20 30 40 50 60 70 80 90 100 VGE, GATE-EMITTER VOLTAGE (V) QG, GATE CHARGE (nC)

Figure 7. Output Inverter Collector-Emitter Figure 8. Gate–to–Emitter Voltage versus Voltage versus Gate-Emitter Voltage Gate Charge

1000 1000 VCE = 300 V VCE = 300 V VGE = 15 V VGE = 15 V RG = 150 Ω IC = 15 A 125°C 25°C 10 25°C 1 10 1 10 100 10 100 1000 IC, COLLECTOR CURRENT (A) RG, GATE RESISTANCE (Ω)

Figure 9. Inverter Switching Energy E(off) versus Figure 10. Inverter Switching Energy E(off) Collector Current IC versus Gate Resistance RG MHPM7B15A60A MOTOROLA

SWITCHING ENERGY ( µ J) VCE , COLLECTOR-EMITTER VOLTAGE (V) I F, FORWARD CURRENT (A) SWITCHING ENERGY ( µ J) VCE, COLLECTOR-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) VGE , GATE VOLTAGE (V),

Typical Characteristics

1000 1000 VCE = 300 V VCE = 300 V VGE = 15 V VGE = 15 V RG = 150 Ω RG = 150 Ω TJ = 25°C TJ = 125°C 100 100 10 10 tf tf @ 125 td td @ 125 t(off) t(off) @ 12511110 100 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 11. Inverter Switching Time tf, td, t(off) Figure 12. Inverter Switching Time tf, td, t(off)

versus Collector Current IC versus Collector Current IC 1000 1000 VCE = 300 V VGE = 15 V RG = 150 Ω 125°C 100 25°C VCE = 300 V tf VGE = 15 V td IC = 15 A t(off) TJ = 25°C 10 1 10 100 1000 1 10 100 RG, GATE RESISTANCE (Ω) IC, COLLECTOR CURRENT (A)

Figure 13. Inverter Switching Time Figure 14. Inverter Switching Time tr versus

tf, td, t(off) versus Gate Resistance RG Collector Current IC 1000 10000 VCE = 300 V VGE = 15 V Cies IC = 15 A TJ = 25°C 1000 100 Coes

C

10 res1110 100 1000 1 10 100 1000 RG, GATE RESISTANCE (Ω) VCE (V)

Figure 15. Inverter Switching Time tr versus Figure 16. Inverter Capacitance versus VCE Gate Resistance RG MOTOROLA MHPM7B15A60A

SWITCHING TIME (ns) SWITCHING TIME (ns) SWITCHING TIME (ns) CAPACITANCE (pF) SWITCHING TIME (ns) SWITCHING TIME (ns),

Typical Characteristics

1.0 1.0 D = 0.5 D = 0.5 0.2 0.2 0.1 P(pk) 0.1 P(pk) t1 t1 RθJC(t) = r(t)(RθJC) RθJC(t) = r(t)(RθJC)t t RθJC = 2.2°C/W 2 RθJC = 3.4°C/W D Curves apply for power pulse D Curves apply for power pulse train shown read time at t1 train shown read time at tSINGLE PULSE SINGLE PULSE 1TJ(pk)–TC = P(pk) RθJC(t) TJ(pk)–TC = P(pk) RθJC(t) 0.01 0.01 0.01 0.1 1.0 10 100 1000 0.01 0.1 1.0 10 100 1000 t, TIME (ms) t, TIME (ms)

Figure 17. Ouput Inverter IGBT Figure 18. Output Diode Thermal Response Thermal Response

L = 200 µH 5 VGE = 15 V RG = 150Ω0100 200 300 400 500 600 700 800 VCE, COLLECTOR-EMITTER VOLTAGE (V)

Figure 19. Output Inverter Reverse Bias Safe Operating Area (RBSOA) MHPM7B15A60A MOTOROLA

r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) I C, COLLECTOR CURRENT (A) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED),

PACKAGE DIMENSIONS E C VK AB AE AA

9 PL

AC AF

3 PL

AD DETAIL Z A Q N AH 2 PL G 2 PL W 1 17

2 PL T

L MSRB

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 25 18 2. CONTROLLING DIMENSION: MILLIMETER.

Y AG X 3. LEAD LOCATION DIMENSIONS (ie: M, B. AA...)4 PL 4 PL ARE TO THE CENTER OF THE LEAD. P

MILLIMETERS INCHES

U DIM MIN MAX MIN MAX

A 97.54 98.55 3.840 3.880 B 52.45 53.47 2.065 2.105 C 14.60 15.88 0.575 0.625 D 0.43 0.84 0.017 0.033

HJE10.80 12.06 0.425 0.47525 PL

7 PL F 0.94 1.35 0.037 0.053 G 1.60 2.21 0.063 0.087 H 8.58 9.19 0.338 0.362 J 0.30 0.71 0.012 0.028 K 18.80 20.57 0.74 0.81 L 19.30 20.32 0.760 0.800 M 38.99 40.26 1.535 1.585 N 9.78 11.05 0.385 0.435 P 82.55 83.57 3.250 3.290 Q 4.01 4.62 0.158 0.182 R 26.42 27.43 1.040 1.080

D S 12.06 12.95 0.475 0.515

T 4.32 5.33 0.170 0.210

F U 86.36 87.38 3.400 3.440

V 14.22 15.24 0.560 0.600 W 7.62 8.13 0.300 0.320 X 6.55 7.16 0.258 0.282

DETAILZY2.49 3.10 0.098 0.122

AA 2.24 2.84 0.088 0.112 AB 7.32 7.92 0.288 0.312 STYLE 1: AC 4.78 5.38 0.188 0.212 PIN 1. P1 PIN 6. N2 PIN 11. G3 PIN 16. G2 PIN 21. B 2. T– 7. P2 12. K5 17. G4 22. T AD 8.58 9.19 0.338 0.362 3. T+ 8. K1 13. G5 18. W 23. S AE 6.05 6.65 0.238 0.262 4. I+ 9. G1 14. G6 19. V 24. R AF 4.78 5.38 0.188 0.212 5. I– 10. K3 15. G7 20. U 25. N1 AG 69.34 70.36 2.730 2.770 AH ––– 5.08 ––– 0.200

CASE 440-01 ISSUE O MOTOROLA MHPM7B15A60A

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden –TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MHPM7B15A60A ◊ CODELINE TO BE PLACED HERE MHPMMO7TBO15RAO6L0A/D

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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes poss
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line N–Channel Enhancement–Mode .designed primarily for wideband large–signal output and driver stages up to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line N–Channel Enhancement–Mode .designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166W/D N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166W/D N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Low Crss — 4.5 pF @ VDS = 28 V 20 W, 500 MHz • MRF166C — Typical Performance at 400 MHz, 28 Vdc MOSFET