Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A30E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive

Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A30E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 30 AMP, 600 VOLT designed for 3.0 hp general purpose 3–phase induction motor drive HYBRID POWER MODULE applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) with integrated ESD protection Gate– Emitter zener diodes and ultrafast soft (UFS) free–wheeling diodes to give optimum performance. Th...
Author: Florian Hartmann Shared: 8/19/19
Downloads: 292 Views: 891

Content

Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A30E60DC3/D Integrated Power Stage Motorola Preferred Device

for 230 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 30 AMP, 600 VOLT designed for 3.0 hp general purpose 3–phase induction motor drive HYBRID POWER MODULE applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) with integrated ESD protection Gate– Emitter zener diodes and ultrafast soft (UFS) free–wheeling diodes to give optimum performance. The solderable top connector pins are designed for easy interfacing to the user’s control board. • Short Circuit Rated 10 µs @ 125°C, 400 V • Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) • Compact Package Outline • Access to Positive and Negative DC Bus • Independent Brake Circuit Connections • UL Recognition Pending ORDERING INFORMATION Voltage Current Equivalent CASE 464D–01 Device Rating Rating Horsepower ISSUE O PHPM7A30E60DC3 600 30 3.0 MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Repetitive Peak Input Rectifier Reverse Voltage (TJ = 25°C to 150°C) VRRM 900 V IGBT Reverse Voltage VCES 600 V Gate-Emitter Voltage VGES ±20 V Continuous IGBT Collector Current (TC = 25°C) ICmax 30 A Continuous IGBT Collector Current (TC = 80°C) ICmax 21.8 A Repetitive Peak IGBT Collector Current (1) IC(pk) 60 A Continuous Free–Wheeling Diode Current (TC = 25°C) IFmax 30 A Continuous Free–Wheeling Diode Current (TC = 80°C) IF80 20 A Repetitive Peak Free–Wheeling Diode Current (1) IF(pk) 60 A Average Converter Output Current (Peak–to–Average ratio of 10, TC = 95°C) IOmax 27.6 A IGBT Power Dissipation per die (TC = 95°C) PD 34 W Free–Wheeling Diode Power Dissipation per die (TC = 95°C) PD 23 W Junction Temperature Range TJ –40 to +150 °C Short Circuit Duration (VCE = 400 V, TJ = 125°C) tsc 10 s Isolation Voltage, pin to baseplate VISO 2500 Vac Operating Case Temperature Range TC –40 to +95 °C Storage Temperature Range Tstg –40 to +150 °C Mounting Torque — Heat Sink Mounting Holes — 12 lb–in (1) 1.0 ms = 1.0% duty cycle Preferred devices are Motorola recommended choices for future use and best overall value. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. M Moottoorrollaa, IInGc.B 1T99 8Device Data 1, ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit DC AND SMALL SIGNAL CHARACTERISTICS Input Rectifier Forward Voltage (IF = 30 A) VF — 1.04 1.25 V Gate–Emitter Leakage Current (VCE = 0 V, VGE = ±20 V) IGES — — ±20 A Collector–Emitter Leakage Current (VCE = 600 V, VGE = 0 V) ICES — 5.0 100 A Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) VGE(th) 4.0 6.0 8.0 V Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) V(BR)CES 600 — — V Collector–Emitter Saturation Voltage (IC = ICmax, VGE = 15 V) VCE(sat) — 2.2 2.6 V Free–Wheeling Diode Forward Voltage (IF = IFmax, VGE = 0 V) VF 1.6 1.8 2.1 V THERMAL CHARACTERISTICS, EACH DIE Thermal Resistance — IGBT RJC — 1.3 1.6 °C/W Thermal Resistance — Free–Wheeling (Fast Soft) Diode RJC — 1.9 2.4 °C/W Thermal Resistance — Input Rectifier RJC — 2.6 3.3 °C/W TEMPERATURE SENSE DIODE Forward Voltage (@ IF = 1.0 mA) VF 1.983 2.024 2.066 V Forward Voltage Temperature Coefficient (@ IF = 1.0 mA) TCVF — –8.64 — mV/°C 2 Motorola IGBT Device Data,

TYPICAL CHARACTERISTICS

60 60 50 50 TJ = 125°C TJ = 125°C 40 40 25°C 25°C 30 30 20 20 10 100000.2 0.4 0.6 0.8 1.0 1.2 0 0.5 1.0 1.5 2.0 2.5 VF, FORWARD VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)

Figure 1. Forward Characteristics — Figure 2. Forward Characteristics — Input Rectifier Free–Wheeling Diode

60 60 VGE = 18 V 15 V VGE = 18 V 15 V 50 50 12 V 12 V 9.0 V 40 40 9.0 V 30 30 20 20 TJ = 25°C TJ = 125°C 10 100000.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

Figure 3. Forward Characteristics, TJ = 25°C Figure 4. Forward Characteristics, TJ = 125°C

+15 V 5.0 4.0 MBRS1100T3 3.0 2.0 MC33153 1.0 RG(on) 0 20 –1.0 RG(off) –2.0 MBRS1100T3 –3.0 TJ = 25°C MBRS1100T3 –4.0 –5.0 –30 –20 –10 0 10 20 30 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)

Figure 5. Gate–Emitter Zener Diode Figure 6. Recommended Gate Drive Circuit Clamp Characteristic Motorola IGBT Device Data 3

IG, GATE CLAMP DIODE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) IF, FORWARD CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) IF, FORWARD CURRENT (AMPS),

TYPICAL CHARACTERISTICS

2.5

MAXIMUM

+15 V 2.0 TYPICAL

MINIMUM

R1 1.5 12.4 k A/D INPUT 14 1.0

TYPICAL

VF = 2.240 – 0.00864 T 0.5 MIN: 2.199 – 0.00864 T MAX: 2.282 – 0.00864 T 15 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (°C)

Figure 7. Recommended Temperature Sense Figure 8. BAV99LT1 Temperature Sense Diode Bias Circuit Performance: VF = 2.59 – 7.31E–3 TC

MOTOR OUTPUT BRAKE RESISTORURVS3PHASE INPUTWT12345678910 11 12 D7 D8 D10 D12 D1 Q1 D3 Q3 D5 Q5 D9 D11 D13

TEMP SENSE

D14 Q2 Q4 Q6 Q7 D2 D4 D6 24 23 22 21 20 19 18 17 16 15 14 13 R1 SENSE FILTERR2 R3 RESISTOR + C1 R NTC

FILTER Figure 9. Schematic of Module, Showing Pin–Out and External Connections

4 Motorola IGBT Device Data VF, FORWARD VOLTAGE @ 1 mA (VOLTS), KEEP–OUT ZONES (x4) 0.585 0.066 0.250 0.175 0.450 1.850 0.270 0.925 0.140 OPTIONAL NON–PLATED NON–PLATED THRU–HOLES FOR ACCESS THRU–HOLE TO HEAT SINK MOUNTING SCREWS (x2) PLATED THRU–HOLES (x24) NOTES: 1. Package is symmetrical, except for a polarizing plastic post near pin 1, indicated by a non–plated thru–hole in the footprint. 2. Dimension of plated thru–holes indicates finished hole size after plating. 3. Access holes for mounting screws may or may not be necessary depending on assembly plan for finished product. Figure 10. Package Footprint (Dimensions in Inches) Motorola IGBT Device Data 5,

PACKAGE DIMENSIONS A NOTES: AAQ3PL 1. DIMENSIONING AND TOLERANCING PER ANSI U Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

Y 2 PL 3. LEAD LOCATION DIMENSIONS (ie: P, Q, R, S...)

ARE TO THE CENTER OF THE LEAD. MILLIMETERS INCHES12345678910 11 12 DIM MIN MAX MIN MAX A 111.51 112.52 4.390 4.430 B 50.93 51.94 2.005 2.045 C 12.32 13.59 0.485 0.535 D 0.89 1.65 0.035 0.065

BPNHE8.64 9.65 0.340 0.380

F 0.13 0.64 0.005 0.025 G 5.97 6.73 0.235 0.265 H 46.48 47.50 1.830 1.870

R J 0.41 1.22 0.016 0.048

24 23 22 21 20 19 18 17 16 15 14 13 K 16.26 17.27 0.640 0.680 L 3.71 4.72 0.146 0.186 M 5.46 6.48 0.215 0.255 N 10.92 11.94 0.430 0.470 P 37.60 38.60 1.480 1.520

S G 22 PLMQ2.01 2.62 0.079 0.103

4 PL R 23.24 23.75 0.915 0.935 S 14.35 15.37 0.565 0.605 U 99.10 100.08 3.900 3.940 V 81.28 82.55 3.200 3.240

J W 42.67 43.69 1.680 1.720Y 5.15 5.77 0.203 0.227

X 11.30 12.07 0.445 0.475 AA 2.01 2.72 0.079 0.107 AB 16.26 17.27 0.640 0.680

F DETAIL Z

24 PL DETAIL Z

D 24 PL AB X C K E L V W CASE 464D–01 ISSUE O

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488 Customer Focus Center: 1–800–521–6274 Mfax: email is hidden – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ 6 ◊ Motorola MIGHBPTM D7Ae3v0icEe6 0DDaCta3/D]
15

Similar documents

Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A25S120DC3/D Integrated Power Stage for 5.0 hp Motorola Preferred Device 460 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A25S120DC3/D Integrated Power Stage for 5.0 hp Motorola Preferred Device 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 25 AMP, 1200 VOLT des
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A20E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A20E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 20 AMP, 600 VOLT designed for
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A15S120DC3/D Integrated Power Stage for 3.0 hp Motorola Preferred Device 460 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A15S120DC3/D Integrated Power Stage for 3.0 hp Motorola Preferred Device 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 15 AMP, 1200 VOLT des
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A15A60A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A15A60A/D Motorola Preferred Device Integrated Power Stage for 1.0 hp Motor Drives The MHPM7A15A60A module integrates a 3-phase input rectifier bridge, 15 AMP, 600 VOLT 3-phase output inverter, brake transistor/diode, current sense resistor an
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10S120DC3/D Integrated Power Stage for 2.0 hp Motorola Preferred Device 460 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10S120DC3/D Integrated Power Stage for 2.0 hp Motorola Preferred Device 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 10 AMP, 1200 VOLT des
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A10E60DC3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is 10 AMP, 600 VOLT designed for
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B5A120D/D Integrated Power Stage for 460 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B5A120D/D Integrated Power Stage Motorola Preferred Devices for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 1.0, 2.0 and 3.0 hp motor drive applications. The inverter 5.
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B20E60D3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B20E60D3/D Integrated Power Stage Motorola Preferred Device for 230 VAC Motor Drives This module integrates a 3–phase inverter and 3–phase rectifier in a single convenient package. It is designed for 2.0 hp motor drive 20 AMP, 600 VOLT applica
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10N120/D Integrated Power Stage for 460 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10N120/D Integrated Power Stage for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp motor drive applications. The inverter incorporates advanced Motoro
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B15E60D3/D Integrated Power Stage for 230 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B15E60D3/D Integrated Power Stage for 230 VAC Motor Drives Motorola Preferred Devices These modules integrate a 3–phase inverter and 3–phase rectifier in a single convenient package. They are designed for 0.5, 1.0, and 1.5 hp motor drive appli
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10A60D/D Motorola Preferred Devices Integrated Power Stage for 230 VAC Motor Drives
Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10A60D/D Motorola Preferred Devices Integrated Power Stage for 230 VAC Motor Drives 10, 20 AMP, 600 V These modules integrate a 3–phase inverter in a single convenient package. HYBRID POWER MODULES They are designed for 1.0 and 2.0 hp motor d
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60/D  N–Channel Enhancement–Mode Silicon Gate
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60/D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO–264 termination scheme to provide an enhanced and reliable high 40 A @ 90°C voltage–blocking cap
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60D/D  N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60D/D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264 40 A @ 90°C This Insulated Gate Bipolar Transistor (IGBT) is co–packaged 66 A @ 25°C with a soft recovery ultra–fast rectifier and uses an advance
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY30N60D/D  N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY30N60D/D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264 30 A @ 90°C This Insulated Gate Bipolar Transistor (IGBT) is co–packaged 50 A @ 25°C with a soft recovery ultra–fast rectifier and uses an advance
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1946/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1946/D The RF Line .designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance 30 W, 136–220 MHz Output Power = 30 Watts RF POWER Power Ga
Order this document The RF MOSFET Line 85 WATTS, 1.0 GHz N–Channel Enhancement–Mode Lateral MOSFET 28 VOLTS
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF185/D The RF MOSFET Line 85 WATTS, 1.0 GHz N–Channel Enhancement–Mode Lateral MOSFET 28 VOLTS LATERAL N–CHANNEL • High Gain, Rugged Device BROADBAND • Broadband Performance from HF to 1 GHz RF POWER MOSFET • Bottom Side Source Eliminates DC Isol
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF184/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF184/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen- cies to 1.0 GHz. The high gain and broadband performance of these devices 60 W, 1.0 GHz makes them idea
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF183/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF183/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen- cies to 1.0 GHz. The high gain and broadband performance of these devices 45 W, 1.0 GHz makes ithem ide
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF182/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF182/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz 30 W, 1.0 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common LATERAL N–CHANNEL Mode Inductance
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line N–Channel Enhancement Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line N–Channel Enhancement Mode MOSFET Designed for broadband commercial and military applications up to 400 MHz 100 W, 28 V, 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull N–CHANNEL conf
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes poss
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes pos
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes poss
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line N–Channel Enhancement–Mode .designed primarily for wideband large–signal output and driver stages up to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line N–Channel Enhancement–Mode .designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166W/D N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166W/D N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Low Crss — 4.5 pF @ VDS = 28 V 20 W, 500 MHz • MRF166C — Typical Performance at 400 MHz, 28 Vdc MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166C/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166C/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Low Crss — 4.5 pF @ VDS = 28 V 20 W, 500 MHz • MRF166C — Typical Performance at 400 MHz, 28 Vdc MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF160/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF160/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50% 4.0 W, to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16030/D The RF Line RF Power Transistor
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16030/D The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • 30 WATTS, 1.6 GHzSpecified 28 Volt, 1.6 GHz Class–C Characteristics RF POWER TRAN