Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10N120/D Integrated Power Stage for 460 VAC Motor Drives

Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10N120/D Integrated Power Stage for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp motor drive applications. The inverter incorporates advanced Motorola Preferred Devices insulated gate bipolar transistors (IGBT) matched with fast soft free–wheeling diodes to give optimum performance. The top connector pins are designed for easy interfacing to the user’s control board. 10, 15, 25 A, 1200 V • Short Circuit Rated 10 µs @ 125°C, 720 V HYBRID POWER M...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10N120/D Integrated Power Stage

for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp motor drive applications. The inverter incorporates advanced Motorola Preferred Devices insulated gate bipolar transistors (IGBT) matched with fast soft free–wheeling diodes to give optimum performance. The top connector pins are designed for easy interfacing to the user’s control board. 10, 15, 25 A, 1200 V • Short Circuit Rated 10 µs @ 125°C, 720 V HYBRID POWER MODULES • Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) • Compact Package Outline • Access to Positive and Negative DC Bus SL SUFFIX • UL Recognized CASE 464A–01 Style 1 ORDERING INFORMATION Device Current Rating Package MHPM6B10N120SL 10 464A–01 MHPM6B15N120SL 15 Style 1 MHPM6B25N120SL 25 MHPM6B10N120SS 10 464B–02 MHPM6B15N120SS 15 Style 1 MHPM6B25N120SS 25 SS SUFFIX CASE 464B–02 Style 1 MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit IGBT Reverse Voltage VCES 1200 V Gate-Emitter Voltage VGES ± 20 V Continuous IGBT Collector Current (TC = 80°C) 10A120 ICmax 10 A 15A120 15 25A120 25 Repetitive Peak IGBT Collector Current (1) 10A120 IC(pk) 20 A 15A120 30 25A120 50 Continuous Diode Current (TC = 25°C) 10A120 IFmax 10 A 15A120 15 25A120 25 Continuous Diode Current (TC = 80°C) 10A120 IF80 8.3 A 15A120 11 25A120 14 Repetitive Peak Diode Current (1) 10A120 IF(pk) 20 A 15A120 30 25A120 50 IGBT Power Dissipation per die (TC = 95°C) 10A120 PD 41 W 15A120 50 25A120 65 Diode Power Dissipation per die (TC = 95°C) 10A120 PD 16 W 15A120 22 25A120 27 (1) 1.0 ms = 1.0% duty cycle Preferred devices are Motorola recommended choices for future use and best overall value. Motorola IGBT Device Data 1 Motorola, Inc. 1998, MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Junction Temperature Range TJ – 40 to +150 °C Short Circuit Duration (VCE = 720 V, TJ = 125°C) tsc 10 s Isolation Voltage, Pin to Baseplate VISO 2500 Vac Operating Case Temperature Range TC – 40 to +95 °C Storage Temperature Range Tstg – 40 to +150 °C Mounting Torque — Heat Sink Mounting Holes — 1.4 Nm ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit DC AND SMALL SIGNAL CHARACTERISTICS Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) IGES — — ± 20 µA Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) ICES — 5.0 100 µA Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) VGE(th) 5.0 6.0 7.0 V Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) V(BR)CES 1200 — — V Collector-Emitter Saturation Voltage (IC = ICmax, VGE = 15 V) VCE(SAT) 1.7 2.35 2.9 V TJ = 125°C — 2.69 — Forward Transconductance 10A120 gfe — 8.3 — mho 15A120 — 14 — 25A120 — 19 — Diode Forward Voltage (IF = IFmax, VGE = 0 V) VF 1.7 2.35 3.1 V TJ = 125°C — 1.9 — Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 MHz) 10A120 Cies — 1880 — pF 15A120 — 2620 — 25A120 — 4770 — Input Gate Charge (VCE = 600 V, IC = ICmax, VGE = 15 V)10A120 QT — 65 — nC 15A120 — 87 — 25A120 — 150 — INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C) Recommended Gate Resistor (RG(on) = RG(off)) RG 10A120 — 82 — 15A120 — 82 — 25A120 — 68 — Turn-On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) td(on) ns 10A120 — 174 — 15A120 — 240 — 25A120 — 330 — Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V) tr ns 10A120 — 84 — 15A120 — 105 — 25A120 — 150 — Turn–Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) td(off) ns 10A120 — 640 — 15A120 — 780 — 25A120 — 1060 — Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V) tf ns 10A120 — 39 47 15A120 — 48 58 25A120 — 70 84 Turn-On Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) Eon mJ 10A120 — 1.5 1.8 15A120 — 2.7 3.3 25A120 — 4.6 5.6 2 Motorola IGBT Device Data, Characteristic Symbol Min Typ Max Unit INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C) – continued Turn-Off Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 Eoff — 1.1 1.4 mJ 15A120 — 1.7 2.1 25A120 — 3.0 3.5 Diode Reverse Recovery Time (IF = IFmax, V = 600 V) 10A120 trr — 95 — ns 15A120 — 110 — 25A120 — 124 — Peak Reverse Recovery Current (IF = IFmax, V = 600 V) 10A120 Irrm — 8.0 — A 15A120 — 9.7 — 25A120 — 11.5 — Diode Stored Charge (IF = IFmax, V = 600 V) 10A120 Qrr — 550 — nC 15A120 — 600 — 25A120 — 740 — INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 125°C) Characteristic Symbol Min Typ Max Unit Turn–On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) td(on) ns 10A120 — 160 — 15A120 — 220 — 25A120 — 310 — Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V) tr ns 10A120 — 93 — 15A120 — 110 — 25A120 — 160 — Turn–Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) td(off) ns 10A120 — 680 — 15A120 — 850 — 25A120 — 1140 — Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V) tf ns 10A120 — 51 — 15A120 — 60 — 25A120 — 76 — Turn–On Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) Eon mJ 10A120 — 2.0 — 15A120 — 3.6 — 25A120 — 6.1 — Turn–Off Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) Eoff mJ 10A120 — 1.5 — 15A120 — 2.4 — 25A120 — 4.2 — Diode Reverse Recovery Time (IF = IFmax, V = 600 V) trr ns 10A120 — 160 — 15A120 — 210 — 25A120 — 250 — Peak Reverse Recovery Current (IF = IFmax, V = 600 V) Irrm A 10A120 — 11.0 — 15A120 — 14.1 — 25A120 — 17.4 — Diode Stored Charge (IF = IFmax, V = 600 V) 10A120 Qrr — 995 — nC 15A120 — 1770 — 25A120 — 2460 — THERMAL CHARACTERISTICS (Each Die) Thermal Resistance — IGBT 10A120 RJC — 1.1 1.3 °C/W 15A120 — 0.89 1.1 25A120 — 0.68 0.85 Thermal Resistance — Diode 10A120 RJC — 2.8 3.5 °C/W 15A120 — 2.0 2.5 25A120 — 1.6 2.0 Motorola IGBT Device Data 3,

TYPICAL CHARACTERISTICS

(see also application information) 2.0 2.0 1.8 TJ = 25°C VGE = 18 V 12 V TJ = 125°C 15 V1.6 1.5 25°C 1.4 1.2 1.0 1.0 0.8 9.0 V 0.6 0.5 0.4 0.20000.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VF, FORWARD VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 1. Forward Characteristics — Figure 2. Forward Characteristics, TJ = 25°C Free–Wheeling Diode

2.0 16 1.8 VGE = 18 V 12 V 14 1.6 15VT= 125°C 10N120J 15N120 1.4 25N120 1.2 10 1.0 8.0 0.8 6.0 0.6 4.0 VCE = 400 V 0.4 VCE = 500 V 9.0 V 0.2 2.0 VCE = 600V0001.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 0 20 40 60 80 100 120 140 160 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC)

Figure 3. Forward Characteristics, TJ = 125°C Figure 4. Gate–Emitter Voltage versus Total Gate Charge

10 10 T = 125°C VCE = 600 VJ T = 25°C VJ GE = 15VtIC = Id(off) Cmax 1.0 1.0 td(off) VCE = 600 V VGE = 15 V RG = RG(RECOMMENDED) 0.1 0.1 tf tf TJ = 125°C TJ = 25°C 0.01 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 0.5 1.0 1.5 2.0 2.5 31..0 IC, COLLECTOR CURRENT (NORMALIZED: I /I ) RG, GATE RESISTANCEC Cmax (NORMALIZED: RG/RG(RECOMMENDED))

Figure 5. Inductive Switching Times versus Figure 6. Inductive Switching Times versus Collector Current Gate Resistance

4 Motorola IGBT Device Data t, TIME (NORMALIZED: TIME/td(off)typ) IC, COLLECTOR CURRENT IF, FORWARD CURRENT (NORMALIZED: IC/ICmax) (NORMALIZED: IF/IFmax) t, TIME (NORMALIZED: TIME/td(off)typ) VGE, GATE–EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax),

TYPICAL CHARACTERISTICS

(see also application information) 2.5 6.0 25°C td(on) 2.0 TJ = 125°C 5.0 25°C 4.0 1.5 TJ = 125°C TJ = 125°C 3.0 T = 125°C 1.0 25°CJt2.0r td(on) 25°C VCE = 600 V0.5 VGE = 15 V 1.0 tr RG = RG(RECOMMENDED) 0000.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 0.5 1.0 1.5 2.0 2.5 3.0 IC, COLLECTOR CURRENT (NORMALIZED: I /I ) RG, GATE RESISTANCEC Cmax (NORMALIZED: RG/RG(RECOMMENDED))

Figure 7. Inductive Switching Times versus Figure 8. Inductive Switching Times versus Collector Current Gate Resistance

2.5 3.0 ° Eon, T = 125°CEon, TJ = 125CJE, T = 125°C 2.5 Eon, TJ = 25°C2.0 off J Eon, TJ = 25°C 2.0 1.5 Eoff, TJ = 125°C Eoff, TJ = 25°C 1.5 1.0 Eoff, TJ = 25°C1.0 VCE = 600 V VCE = 600 V0.5 VGE = 15 V 0.5 VGE = 15 V RG = RG(RECOMMENDED) IC = ICmax0000.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 0.5 1.0 1.5 2.0 2.5 3.0 IC, COLLECTOR CURRENT (NORMALIZED: I /I ) RG, GATE RESISTANCEC Cmax (NORMALIZED: RG/RG(RECOMMENDED))

Figure 9. Turn–On and Turn–Off Energy Figure 10. Turn–On and Turn–Off Energy Losses versus Collector Current Losses versus Gate Resistance

100 1000 TJ = 125°C Ciss 10 100 Irr 25°C Coss TJ = 125°C t 1.0 rr 10 25°C V = 600 V Crss 0.1 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 5.0 10 15 20 25 30 35 40 IF, FORWARD CURRENT (NORMALIZED: IF/IFmax) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 11. Reverse Recovery Characteristics Figure 12. Capacitance Variation

— Free–Wheeling Diode

Motorola IGBT Device Data 5

Irr , PEAK REVERSE RECOVERY CURRENT Eon, TURN–ON AND Eoff , TURN–OFF t, TIME (NORMALIZED: TIME/tr(typ)) t rr, REVERSE RECOVERY TIME ENERGY LOSSES (NORMALIZED: E/Eoff(typ)) (NORMALIZED: t rr /trr(typ), 10 * Irr /Irr(typ)) Eon, TURN–ON AND Eoff , TURN–OFF C, CAPACITANCE (NORMALIZED TO I (pF/A)) t, TIME (NORMALIZED: TIME/t )Cmax ENERGY LOSSES (NORMALIZED: E/Eoff(typ)) r(typ),

TYPICAL CHARACTERISTICS

(see also application information) 70 1.0 VGE = 15 V 60 RG = RG(RECOMMENDED) 25N120 TJ = 25°C DIODE 0.1 IGBT 15N120 10N120 0.01 0 0.001 0 200 400 600 800 1000 1200 1400 1600 0.01 0.1 1.0 10 100 1000 10,000 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) t, TIME (ms)

Figure 13. Reverse Biased Safe Operating Figure 14. Thermal Response Area (RBSOA)

90% GATE DRIVE OUTPUT 10% td(on) tr td(off) tf 90%

IC

10% 3%

VCE

Eon Eoff 1.0 s

Figure 15. Timing Definitions

+15 V +15 V MBRS130LT3 MBRS130LT3 RG(on) MC33153 RG MC33153 RG(off) MBRS130LT3 MBRS130LT3 MBRS130LT3

Figure 16. Common Gate Drive Circuit Figure 17. Recommended Gate Drive Circuit

6 Motorola IGBT Device Data IC, COLLECTOR CURRENT (AMPS) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED), APPLICATION INFORMATION These modules are designed to be used as the power ommended value listed under “Electrical Characteristics.” stage of a three–phase AC induction motor drive. They may The time axes are normalized exactly as for the correspond- be used for up to 460 VAC applications. Switching frequen- ing graphs showing variation with IC. cies up to 15 kHz were considered in the design. Similar transformations have been made for the next two Gate resistance recommendations have been listed. figures, showing Eon and Eoff. Energies have been normal- These choices were based on the common gate drive circuit ized to Eoff at 25°C at ICmax with the recommended RG. IC shown in Figure 16. However, significant improvements in has been normalized to ICmax, and RG has been normalized Eoff may be gained by either of two methods: use of a nega- to the recommended value. tive gate bias, or use of the gate drive shown in Figure 17. Reverse recovery characteristics are also normalized. IC Separate turn–on and turn–off gate resistors give the best re- has again been normalized to ICmax. Reverse recovery time sults; in this case, RG(off) should be chosen as small as pos- trr has been normalized to trr at 25°C at ICmax. Peak reverse sible while limiting current to prevent damage to the gate recovery current Irrm has been normalized to Irrm at 25°C at drive IC. Designers should also note that turn–on and turn– ICmax, then multiplied by 10. off delay times are measured from the rising and falling Capacitance has been normalized to device rated ICmax. edges of the gate drive output, not the gate voltage wave- Since all modules are rated for the same voltage, the voltage form. scale on Figure 11 does not need to be normalized. Since all three modules use similar technology, most of the Typical transient thermal impedance is shown for a diode graphs showing typical performance have been normalized. and for an IGBT. All diodes behave quite similarly, as do all Actual values are listed for each size in the table, “Electrical IGBTs. Characteristics.” Data on the graphs reflect performance us- The last two graphs, VGE versus QG and RBSOA, are not ing the common gate drive circuit shown in Figure 16. normalized. The first three curves, showing DC characteristics, are Many issues beyond the ratings must be considered in a normalized for ICmax. The devices all perform similarly at system design. Dynamic characteristics can all be affected rated current. The curves extend to IC(pk), the maximum al- by external circuit parameters. For example, excessive bus lowable instantaneous current. inductance can dramatically increase voltage overshoot dur- The next two graphs, turn–off and turn–on times versus IC, ing switching, increasing the switching energy. The choice of are also normalized for ICmax. In addition, the time scales are gate drive IC can have quite a large effect on rise and fall normalized. Turn–off times are normalized to td(off) at 25°C at times, corresponding to differences in switching energies. In rated current with recommended RG, while turn–on times are many cases, this can be compensated by simply changing normalized to tr at 25°C at rated current with recommended the gate resistor accordingly — a gate driver with a lower RG. drive capability requires a smaller gate resistor. Ultimately, The graphs showing switching times as a function of RG the module must be tested in the final system to characterize are similarly normalized. RG has been normalized to the rec- its performance. 12345Q1 Q3 Q5 D1 D3 D5 Q2 D2 Q4 D4 Q6 D6 17 16 15 14 13 12 11 109876Figure 18. Schematic of Module, Showing Pin–Out Motorola IGBT Device Data 7, RECOMMENDED PCB LAYOUT MODULE SIDE VIEW OF BOARD (Typical Dimensions in mm) 107.75 16.0 15.24 PIN 1 1.65 16.0 5.8 KEEP–OUT 45.75 32.0 ZONES (x4) 41.91 11.0

OPTIONAL

3.81 16.0 NON–PLATED 11.43 THRU–HOLES (x2) PLATED THRU–HOLES (x17) Figure 19. Package Footprint NOTES: 1. Package is symmetrical. 2. Dimension of plated thru–holes indicates finished hole size after plating. 3. Non–plated thru–holes shown for optional access to heat sink mounting screws. 8 Motorola IGBT Device Data,

PACKAGE DIMENSIONS AQ4PL NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

UY2PL Y14.5M, 1982. F 2. CONTROLLING DIMENSION: MILLIMETER.

4 PL 3. LEAD LOCATION DIMENSIONS (ie: G, S, R, H, F...) ARE TO THE CENTER OF THE LEAD. 12345MILLIMETERS INCHES DIM MIN MAX MIN MAX A ––– 107.75 ––– 4.242 B ––– 45.75 ––– 1.801 C 16.37 17.64 0.644 0.694

BPNHD0.77 1.53 0.030 0.060

E 12.49 13.51 0.492 0.532 F 14.86 15.62 0.585 0.615

R G 3.43 4.19 0.135 0.165

H 41.53 42.29 1.635 1.665 17 16 15 14 13 12 11 109876K29.99 31.01 1.181 1.221 L 6.29 7.31 0.248 0.288 M 1.59 2.61 0.063 0.103 N 10.49 11.51 0.413 0.453

SG6PL P 31.49 32.51 1.240 1.280

Q 2.00 2.60 0.079 0.103

Z 5 PLMR20.57 21.33 0.810 0.840

S 15.62 16.38 0.615 0.645 U 92.49 93.51 3.641 3.681 V 104.17 105.44 4.101 4.151 W 37.49 38.51 1.476 1.516 X 15.37 16.64 0.605 0.655

D Y 5.25 5.75 0.207 0.22717 PL Z 11.05 11.81 0.435 0.465 K XCEL V W CASE 464A–01 ISSUE A Motorola IGBT Device Data 9

,

PACKAGE DIMENSIONS

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI

AQ4PL Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

U Y 3. LEAD LOCATION DIMENSIONS (ie: G, S, R, H, F...)2 PL F ARE TO THE CENTER OF THE LEAD.

4 PL MILLIMETERS INCHES DIM MIN MAX MIN MAX12345A––– 107.75 ––– 4.242 B ––– 45.75 ––– 1.801 C 16.37 17.64 0.644 0.694 D 0.77 1.53 0.030 0.060 E 12.49 13.51 0.492 0.532

BPNHF14.86 15.62 0.585 0.615

G 3.43 4.19 0.135 0.165 H 41.53 42.29 1.635 1.665

R K 19.81 20.60 0.780 0.881

L 6.29 7.31 0.248 0.288 17 16 15 14 13 12 11 109876M1.59 2.61 0.063 0.103 N 10.49 11.51 0.413 0.453 P 31.49 32.51 1.240 1.280 Q 2.00 2.60 0.079 0.103

SG6PL R 20.57 21.33 0.810 0.840

S 15.62 16.38 0.615 0.645

Z 5 PLMU92.49 93.51 3.641 3.681

V 104.17 105.44 4.101 4.151 W 37.49 38.51 1.476 1.516 X 15.37 16.64 0.605 0.655 Y 5.25 5.75 0.207 0.227 Z 11.05 11.81 0.435 0.465

D 17 PL X C K E L V W CASE 464B–02 ISSUE A

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488 Customer Focus Center: 1–800–521–6274 Mfax: email is hidden – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ 10 ◊ Motorola IGMBHTP MDe6Bvi1c0eN D12a0ta/D]
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes pos
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes poss
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line N–Channel Enhancement–Mode .designed primarily for wideband large–signal output and driver stages up to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line N–Channel Enhancement–Mode .designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166W/D N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166W/D N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Low Crss — 4.5 pF @ VDS = 28 V 20 W, 500 MHz • MRF166C — Typical Performance at 400 MHz, 28 Vdc MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166C/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166C/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Low Crss — 4.5 pF @ VDS = 28 V 20 W, 500 MHz • MRF166C — Typical Performance at 400 MHz, 28 Vdc MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF160/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF160/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50% 4.0 W, to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16030/D The RF Line RF Power Transistor
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16030/D The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • 30 WATTS, 1.6 GHzSpecified 28 Volt, 1.6 GHz Class–C Characteristics RF POWER TRAN
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16006/D The RF Line RF Power Transistor
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16006/D The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • 6.0 WATTS, 1.6 GHzSpecified 28 Volt, 1.6 GHz Class–C Characteristics RF POWER TRA
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF158/D The RF TMOS Line N–Channel Enhancement Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF158/D The RF TMOS Line N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB 2.0 W, to 500 MHz Effi
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF157/D The RF Power MOS Line N–Channel Enhancement Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF157/D The RF Power MOS Line N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45% (Typ) 600
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF154/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF154/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state trans
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state tran
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) 150 W, to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15090/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15090/D The RF Line Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MH
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 V performance of this devi