Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10A60D/D Motorola Preferred Devices Integrated Power Stage for 230 VAC Motor Drives

Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10A60D/D Motorola Preferred Devices Integrated Power Stage for 230 VAC Motor Drives 10, 20 AMP, 600 V These modules integrate a 3–phase inverter in a single convenient package. HYBRID POWER MODULES They are designed for 1.0 and 2.0 hp motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) matched with free–wheeling diodes to give optimum performance. The top connector pins are designed for easy interfacing to the user’s control board. • Short Circuit Rated 10 µs @ 125°C • Pin-to-Baseplate ...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10A60D/D Motorola Preferred Devices Integrated Power Stage

for 230 VAC Motor Drives 10, 20 AMP, 600 V These modules integrate a 3–phase inverter in a single convenient package. HYBRID POWER MODULES They are designed for 1.0 and 2.0 hp motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) matched with free–wheeling diodes to give optimum performance. The top connector pins are designed for easy interfacing to the user’s control board. • Short Circuit Rated 10 µs @ 125°C • Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) • Compact Package Outline • Access to Positive and Negative DC Bus • UL Recognized

PRELIMINARY

MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit IGBT Reverse Voltage VCES 600 V Gate-Emitter Voltage VGES ± 20 V Continuous IGBT Collector Current 10A60 ICmax 10 A 20A60 20 Peak Repetitive IGBT Collector Current (1) 10A60 IC(pk) 20 A 20A60 40 Continuous Diode Current 10A60 IFmax 10 A 20A60 20 Peak Repetitive Diode Current (1) 10A60 IF(pk) 20 A 20A60 40 IGBT Power Dissipation (TC = 25°C) 10A60 PD 52 W 20A60 78 Diode Power Dissipation (TC = 25°C) 10A60 PD 19 W 20A60 38 IGBT Power Dissipation (TC = 95°C) 10A60 PD 23 W 20A60 34 Diode Power Dissipation (TC = 95°C) 10A60 PD 8.3 W 20A60 17 Junction Temperature Range TJ – 40 to +150 °C Short Circuit Duration (VCC = 300 V, TJ = 125°C) tsc 10 sec Isolation Voltage VISO 2500 V Operating Case Temperature Range TC – 40 to +95 °C Storage Temperature Range Tstg – 40 to +125 °C Mounting Torque — Heat Sink Mounting Holes (#8 or M4 screws) — 12 in–lb (1) 1.0 ms = 1.0% duty cycle This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola, Inc. 1997 1, ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) IGES — — ± 20 µA Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) ICES — 6.0 100 µA TJ = 125°C 2000 Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) VGE(th) 4.0 6.0 8.0 V Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) V(BR)CES 600 — — V Collector-Emitter Saturation Voltage (IC = ICmax, VGE = 15 V) VCE(SAT) — 2.35 3.5 V TJ = 125°C — 2.31 — Diode Forward Voltage (IF = IFmax, VGE = 0 V) VF — 1.23 2.0 V TJ = 125°C — 1.12 — Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 Mhz) Cies pF 10A60 — 2300 — 20A60 — 4400 — Input Gate Charge (VCE = 300 V, IC = ICmax, VGE = 15 V) QT nC 10A60 — 75 — 20A60 — 135 — INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C) Recommended Gate Resistor Turn–On 10A60 RG(on) — 180 — 20A60 — 47 — Turn–Off RG(off) — 20 — Turn-On Delay Time td(on) ns (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 — 375 — 20A60 — 215 — Rise Time tr ns (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 — 160 — 20A60 — 125 — Turn–Off Delay Time td(off) (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) — 219 — ns Fall Time tf (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) — 210 500 ns Turn-On Energy E(on) mJ (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 — 0.85 1.0 20A60 — 1.6 2.0 Turn-Off Energy E(off) mJ (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 — 0.13 1.0 20A60 — 0.3 2.0 Diode Reverse Recovery Time trr ns (IF = IFmax, V = 300 V, RG as specified) — 150 — Peak Reverse Recovery Current Irrm A (IF = IFmax, V = 300 V, RG as specified) 10A60 — 6.8 — 20A60 — 12 — Diode Stored Charge Qrr nC (IF = IFmax, V = 300 V, RG as specified) 10A60 — 560 — 20A60 — 1060 —, INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 125°C) Characteristic Symbol Min Typ Max Unit Turn–On Delay Time td(on) ns (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 — 335 — 20A60 — 200 — Rise Time tr ns (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 — 160 — 20A60 — 125 — Turn–Off Delay Time td(off) ns (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) — 230 — Fall Time tf ns (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) — 460 — Turn–On Energy E(on) mJ (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 — 1.2 — 20A60 — 2.2 — Turn–Off Energy E(off) mJ (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 — 0.44 — 20A60 — 0.82 — Diode Reverse Recovery Time trr ns (IF = IFmax, V = 300 V, RG as specified) — 240 — Peak Reverse Recovery Current Irrm A (IF = IFmax, V = 300 V, RG as specified) 10A60 — 10 — 20A60 — 18 — Diode Stored Charge Qrr nC (IF = IFmax, V = 300 V, RG as specified) 10A60 — 1330 — 20A60 — 2400 — THERMAL CHARACTERISTICS (Each Die) Thermal Resistance — IGBT 10A60 RJC — 1.94 2.43 °C/W 20A60 — 1.28 1.60 Thermal Resistance — Free–Wheeling Diode 10A60 RJC — 5.28 6.60 °C/W 20A60 — 2.61 3.26,

TYPICAL CHARACTERISTICS

2.0 2.0 VGE = 18 V 15 V VGE = 18 V 15 V 12 V 1.5 12 V 1.5 1.0 1.0 9.0 V 9.0 V 0.5 0.50001.0 2.0 3.0 4.0 5.0 6.0 0 1.0 2.0 3.0 4.0 5.0 6.0 VCE (V) VCE (V)

Figure 1. Normalized IC versus VCE, TJ = 25°C Figure 2. Normalized IC versus VCE, TJ = 125°C

2.5 800 700 toff @ 125°C 2.0 tf @ 125°C 1.5 500 toff 1.0 IF (NORMALIZED), 125°C 300 td @ 125°C td 0.5 tf IF (NORMALIZED) 1000000.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.2 0.4 0.6 0.8 1.0 1.2 VF (V) IC/ICmax

Figure 3. IF versus VF Figure 4. td(off), tf, toff versus Normalized IC

1400 10 ton @ 125°C t1000 ontoff @ 125°C t 800 d(on) tf @ 125°C td(on) @ 125°C 1.0 toff tr 400 td @ 125°Ctf tr @ 125°Ct0d0.1 0 20 40 60 80 100 120 0 0.2 0.4 0.6 0.8 1.0 1.2 RG () IC/ICmax

Figure 5. td(off), tf, toff, versus RG Figure 6. td(on), tr, ton versus IC

td , t f , t off (ns) IF/IFmax IC /ICmax t d(on), t r, t on (ALL NORMALIZED ON t r) t d(off), t f , t off (ns) IC /ICmax,

TYPICAL CHARACTERISTICS

10 2.5 ton td(on) 2.0 Eon @ 125°C tr 1.5 Eon 1.0 1.0 Eoff @ 125°C 0.5 @ 125°C Eoff0000.5 1.0 1.5 2.0 2.5 3.0 0 5.0 10 15 20 25 RG/RG (RECOMMENDED) IC, (A)

Figure 7. td(on), tr, ton versus Normalized RG Figure 8. Eon, Eoff versus IC

0.05 2.0 Eoff, 125°C 0.04 Eon, 125°C1.5

E

0.03 on 1.0 0.02 Eoff 0.5 0.0100020 40 60 80 100 120 0 0.5 1.0 1.5 2.0 2.5 RG () RG/RG (RECOMMENDED)

Figure 9. Eoff versus RG(off) at Rated IC Figure 10. Normalized Eon versus Normalized RG(on)

10 1000 Irr Cies Cres 1.0 trr 10 1.0 Coes @ 125°C 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 IF/IFmax VCE (V)

Figure 11. trr, Irr versus IF Figure 12. Capacitance Variation

t rr , (NORMALIZED TO 1), Irr, (NORMALIZED TO 10) Eoff (mJ/A) t d(on), t r, t on (ALL NORMALIZED ONtr) E (NORMALIZED FOR E WITH CAPACITANCE, NORMALIZED TO I (pF/A) on onCmax RECOMMENDED R ) Eon , Eoff (mJ)G(on),

TYPICAL CHARACTERISTICS

15 100 VCC = 300 10A60 20A60 10A60 20A60 10 10 5.0 1.0 +VGE = 15 V –VGE = 0 V RG AS SPECIFIED RG(on) TJ = 25°C00020 40 60 80 100 120 140 0 100 200 300 400 500 600 700 QG (nC) VCE (V)

Figure 13. VGE versus QG Figure 14. Reverse Biased Safe operating Area

1.0 20A60 DIODE 0.8 0.6 10A60 DIODE 0.4 10A60 IGBT 20A60 IGBT 0.2 0.01 0.1 1.0 10 100 1,000 10,000 TIME (ms)

Figure 15. Normalized Transient Thermal Resistance

+15 V

R

t t G(on)on off td(on) tr td(off) tf MC33153 90% 90% OUTPUT, Vout

INVERTED

10% RG(off) 90% INPUT, Vin 50% 50% 10% PULSE WIDTH

Figure 16. Switching Waveforms Figure 17. Typical Gate Drive Circuit

NORMALIZED r(t) VGE (V) IC (A), APPLICATION INFORMATION These modules are designed to be used as the power larger fraction of total turn–on time at 125°C, and in general, stage of a three–phase AC induction motor drive. They may larger gate resistance results in slower switching. be used for up to 230 VAC applications. Switching frequen- Graphs of switching energies follow a similar structure. cies up to 10 kHz have been considered in the design. The first of these graphs, showing variation due to current, is Gate resistance recommendations have been listed. not normalized, as any of these devices operating within its Separate turn–on and turn–off resistors are listed, to be used limits follows the same trend. Eoff does not need to be in a circuit resembling Figure 17. All switching characteristics normalized to show variation with RG(off), as both are are given based on following these recommendations, but specified with the same nominal resistance. Eon, however, appropriate graphs are shown for operation with different has been appropriately normalized. Gate resistance has gate resistance. In order to equalize across the two different been normalized to the specified RG(on). In order to show the module ratings, a normalization process was used. Actual effect of elevated temperature, all energies were normalized typical values are listed in the second section of this to Eon at 25°C using the recommended RG(on). specification sheet, “Electrical Specifications,” but many of Reverse recovery characteristics are also normalized. IF is the graphs are given in normalized units. normalized to rated maximum current. Irrm is normalized so The first three graphs, the DC characteristics, are normal- that at maximum current at either 25°C or 125°C, the graph ized for current. The devices are designed to operate the indicates “10”, while trr is normalized to be “1” at maximum same at rated maximum current (10 and 20 A). The curves current at either temperature. extend to ICpk, the maximum allowable instantaneous Capacitance values are normalized for ICmax. Due to poor current. scaling, gate charge and thermal characteristics are shown The next graph, turn–off times versus current, is again separately for each module. normalized to the rated maximum current. The following Many issues must be considered when doing PCB layout. graph, turn–off times versus RG(off), is intentionally not Figure 19 shows the footprint of a module, allowing for normalized, as both modules behave similarly during turn– reasonable tolerances. A polarizing post is provided near pin off. 1 to ensure that the module is properly inserted during final Turn–on times have been normalized. Again, the graph assembly. When laying out traces, two issues are of primary showing variation due to current has been normalized for importance: current carrying capacity and voltage clearance. rated maximum current. The graph showing variation due to Many techniques may be used to maximize both, including gate resistance normalizes against the recommended RG(on) using traces on both sides of the PCB to double total copper for each module. In addition, the times are normalized to tr at thickness, providing cut–outs in high–current traces near the appropriate temperature. For example, td(on) for a 10 A high–voltage pins, and even removing portions of the board module operating at 125°C at 4.0 A can be found by to increase “over–the–surface” creapage distance. Some multiplying the typical tr for a 10 A module at 125°C (160 ns) additional advantage may be gained by potting the entire by the value shown on the graph at a normalized current of board assembly in a good dielectric. Consult appropriate 0.4 (1.6) to get 256 ns. The most salient features demon- regulatory standards, such as UL 840, for more details on strated by these graphs are the general trends: rise time is a high–voltage creapage and clearance. 12345678Q1 Q3 Q5 D1 D3 D5 Q2 D2 Q4 D4 Q6 D6 16 15 14 13 12 11 10 9 Figure 18. Schematic of Internal Circuit, Showing Package Pin–Out, RECOMMENDED PCB LAYOUT VIEW OF BOARD FROM HEAT SINK (All Dimensions Typical) KEEP–OUT ZONES (x4) NON–PLATED THRU–HOLE 0.270 0.140 0.175 0.265 0.250 0.625 0.270 PIN 1 PLATED THRU–HOLES (x16) 0.065 0.250 3.500 PACKAGE “SHADOW” 0.450 0.175 0.175 0.625 1.350 OPTIONAL NON–PLATED THRU–HOLES FOR ACCESS TO HEAT SINK MOUNTING 1.530 SCREWS (x2)

Figure 19. Package Footprint

NOTES: 1. Package is symmetrical, except for a polarizing plastic post near pin 1, indicated by a non–plated thru–hole in the footprint. 2. Dimension of plated thru–holes indicates finished hole size after plating. 3. Access holes for mounting screws may or may not be necessary depending on assembly plan for finished product.,

PACKAGE DIMENSIONS

3.500 3.000123456780.154 1.000 1.530 0.115 1.350 16 15 14 13 12 11 10 9 0.250 0.050 0.150 0.650 0.350

PRELIMINARY

0.475, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps ◊ MHPM6B10A60D/D]
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MH