Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60/D N–Channel Enhancement–Mode Silicon Gate

Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60/D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO–264 termination scheme to provide an enhanced and reliable high 40 A @ 90°C voltage–blocking capability. Short circuit rated IGBT’s are specifi- 66 A @ 25°C cally suited for applications requiring a guaranteed short circuit 600 VOLTS withstand time such as Motor Control Drives. Fast switching SHORT CIRCUIT RATED characteristics result in efficient operations at high frequencies. • Industry Sta...
Author: Florian Hartmann Shared: 8/19/19
Downloads: 29 Views: 2096

Content

Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60/D

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO–264 termination scheme to provide an enhanced and reliable high 40 A @ 90°C voltage–blocking capability. Short circuit rated IGBT’s are specifi- 66 A @ 25°C cally suited for applications requiring a guaranteed short circuit 600 VOLTS withstand time such as Motor Control Drives. Fast switching SHORT CIRCUIT RATED characteristics result in efficient operations at high frequencies. • Industry Standard High Power TO–264 Package (TO–3PBL) • High Speed Eoff: 60 J per Amp typical at 125°C • High Short Circuit Capability – 10 s minimum • Robust High Voltage Termination • Robust RBSOA

C G C

G E

E

CASE 340G–02, Style 5 TO–264 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 600 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 600 Vdc Gate–Emitter Voltage — Continuous VGE ±20 Vdc Collector Current — Continuous @ TC = 25°C IC25 66 Adc — Continuous @ TC = 90°C IC90 40 — Repetitive Pulsed Current (1) ICM 132 Apk Total Power Dissipation @ TC = 25°C PD 260 Watts Derate above 25°C 2.08 W/°C Operating and Storage Junction Temperature Range TJ, Tstg –55 to 150 °C Short Circuit Withstand Time tsc 10 s (VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT RθJC 0.48 °C/W Thermal Resistance — Junction to Ambient RθJA 35 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 260 °C Mounting Torque, 6–32 or M3 screw 10 lbfin (1.13 Nm) (1) Pulse width is limited by maximum junction temperature. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Mototororloa,l aIn cT. M19O95S Power MOSFET Transistor Device Data 1, ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage BVCES Vdc (VGE = 0 Vdc, IC = 250 µAdc) 600 — — Temperature Coefficient (Positive) — 870 — mV/°C Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) BVECS 25 — — Vdc Zero Gate Voltage Collector Current ICES µAdc (VCE = 600 Vdc, VGE = 0 Vdc) — — 100 (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C) — — 2500 Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES — — 250 nAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage VCE(on) Vdc (VGE = 15 Vdc, IC = 20 Adc) — 2.20 2.80 (VGE = 15 Vdc, IC = 20 Adc, TJ = 125°C) — 2.10 — (VGE = 15 Vdc, IC = 40 Adc) — 2.60 3.25 Gate Threshold Voltage VGE(th) Vdc (VCE = VGE, IC = 1 mAdc) 4.0 6.0 8.0 Threshold Temperature Coefficient (Negative) — 10 — mV/°C Forward Transconductance (VCE = 10 Vdc, IC = 40 Adc) gfe — 12 — Mhos DYNAMIC CHARACTERISTICS Input Capacitance Cies — 6810 — pF Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, C — 464 — f = 1.0 MHz) oes Transfer Capacitance Cres — 15 — SWITCHING CHARACTERISTICS (1) Turn–On Delay Time td(on) — 126 — ns Rise Time (VCC = 360 Vdc, IC = 40 Adc, tr — 95 — Turn–Off Delay Time VGE = 15 Vdc, L = 300Ht— 530 — RG = 20 Ω, TJ = 25°C) d(off) Fall Time Energy losses include “tail” tf — 180 — Turn–Off Switching Loss Eoff — 1.50 2.10 mJ Turn–On Delay Time td(on) — 113 — ns Rise Time (VCC = 360 Vdc, IC = 40 Adc, tr — 104 — Turn–Off Delay Time VGE = 15 Vdc, L = 300Ht— 588 — RG = 20 Ω, TJ = 125°C) d(off) Fall Time Energy losses include “tail” tf — 346 — Turn–Off Switching Loss Eoff — 2.70 — mJ Gate Charge QT — 248 — nC (VCC = 360 Vdc, IC = 40 Adc, Q — 49 — VGE = 15 Vdc) Q2 — 81 — INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance LE nH (Measured from the emitter lead 0.25″ from package to emitter bond pad) — 13 — (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data,

TYPICAL ELECTRICAL CHARACTERISTICS

80 80 TJ = 25°C VGE = 20 V 12.5 V TJ = 125°C VGE = 20 V 12.5 V 17.5 V 15 V 10 V 17.5 V 15 V 60 60 10 V 40 40 20 2000012345012345VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

Figure 1. Output Characteristics, TJ = 25°C Figure 2. Output Characteristics, TJ = 125°C

80 3 VCE = 100 V VGE = 15V5µs PULSE WIDTH 80 µs PULSE WIDTH IC = 40 A 60 TJ = 125°C 2.6 30 A 25°C 2.2 20A01.85678910 – 50 0 50 100 150 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Transfer Characteristics Figure 4. Collector–to–Emitter Saturation Voltage versus Junction Temperature

12000 20 VCE = 0 V TJ = 25°C

QT

Cies 10 Q1 Q2 5 TJ = 25°C C IC = 40 Aoes Cres000510 15 20 25 0 50 100 150 200 250 GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC)

Figure 5. Capacitance Variation Figure 6. Gate–to–Emitter Voltage versus Total Charge Motorola TMOS Power MOSFET Transistor Device Data 3

C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS), 4 4 VCC = 360 V VCC = 360 V VGE = 15 V VGE = 15 V TJ = 125°C RG = 20Ω3IC = 40A3IC = 40A230A230 A 20A1120A0010 20 30 40 50 0 25 50 75 100 125 150 RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Turn–Off Losses versus Figure 8. Turn–Off Losses versus Gate Resistance Junction Temperature

3 100 VCC = 360 V VGE = 15 V RG = 20 Ω TJ = 125°C 2 1011VGE = 15 V RGE = 20 Ω TJ = 125°C 0 0.10510 15 20 25 30 35 40 1 10 100 1000 IC, COLLECTOR–TO–EMITTER CURRENT (AMPS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

Figure 9. Turn–Off Losses versus Figure 10. Reverse Biased Safe Collector–to–Emitter Current Operating Area

4 Motorola TMOS Power MOSFET Transistor Device Data TURN–OFF ENERGY LOSSES (mJ) TURN–OFF ENERGY LOSSES (mJ) IC, COLLECTOR–TO–EMITTER CURRENT (A) TURN–OFF ENERGY LOSSES (mJ),

PACKAGE DIMENSIONS

0.25 (0.010) MTBM–B– –Q– –T– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI

C Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

U E N MILLIMETERS INCHES

DIM MIN MAX MIN MAX A 2.8 2.9 1.102 1.142

A B 19.3 20.3 0.760 0.800

C 4.7 5.3 0.185 0.209

L D 0.93 1.48 0.037 0.058R123E1.9 2.1 0.075 0.083

F 2.2 2.4 0.087 0.102 –Y– G 5.45 BSC 0.215 BSC

P H 2.6 3.0 0.102 0.118 K J 0.43 0.78 0.017 0.031

K 17.6 18.8 0.693 0.740 L 11.0 11.4 0.433 0.449 N 3.95 4.75 0.156 0.187

W P 2.2 2.6 0.087 0.102F 2 PL Q 3.1 3.5 0.122 0.137 G R 2.15 2.35 0.085 0.093 J U 6.1 6.5 0.240 0.256 D 3 PL W 2.8 3.2 0.110 0.125H

0.25 (0.010) MYQSSTYLE 5: PIN 1. GATE 2. COLLECTOR 3. EMITTER

CASE 340G–02 TO–264 ISSUE E Motorola TMOS Power MOSFET Transistor Device Data 5

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola TMOS Power MOSFET Transistor DMeGvYic4e0 DN6a0ta/D]
15

Similar documents

Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60D/D  N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60D/D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264 40 A @ 90°C This Insulated Gate Bipolar Transistor (IGBT) is co–packaged 66 A @ 25°C with a soft recovery ultra–fast rectifier and uses an advance
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY30N60D/D  N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
Order this document SEMICONDUCTOR TECHNICAL DATA by MGY30N60D/D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264 30 A @ 90°C This Insulated Gate Bipolar Transistor (IGBT) is co–packaged 50 A @ 25°C with a soft recovery ultra–fast rectifier and uses an advance
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1946/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1946/D The RF Line .designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance 30 W, 136–220 MHz Output Power = 30 Watts RF POWER Power Ga
Order this document The RF MOSFET Line 85 WATTS, 1.0 GHz N–Channel Enhancement–Mode Lateral MOSFET 28 VOLTS
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF185/D The RF MOSFET Line 85 WATTS, 1.0 GHz N–Channel Enhancement–Mode Lateral MOSFET 28 VOLTS LATERAL N–CHANNEL • High Gain, Rugged Device BROADBAND • Broadband Performance from HF to 1 GHz RF POWER MOSFET • Bottom Side Source Eliminates DC Isol
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF184/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF184/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen- cies to 1.0 GHz. The high gain and broadband performance of these devices 60 W, 1.0 GHz makes them idea
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF183/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF183/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen- cies to 1.0 GHz. The high gain and broadband performance of these devices 45 W, 1.0 GHz makes ithem ide
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF182/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF182/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz 30 W, 1.0 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common LATERAL N–CHANNEL Mode Inductance
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line N–Channel Enhancement Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line N–Channel Enhancement Mode MOSFET Designed for broadband commercial and military applications up to 400 MHz 100 W, 28 V, 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull N–CHANNEL conf
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes poss
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes pos
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes poss
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line N–Channel Enhancement–Mode .designed primarily for wideband large–signal output and driver stages up to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line N–Channel Enhancement–Mode .designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166W/D N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166W/D N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Low Crss — 4.5 pF @ VDS = 28 V 20 W, 500 MHz • MRF166C — Typical Performance at 400 MHz, 28 Vdc MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166C/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166C/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Low Crss — 4.5 pF @ VDS = 28 V 20 W, 500 MHz • MRF166C — Typical Performance at 400 MHz, 28 Vdc MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF160/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF160/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50% 4.0 W, to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16030/D The RF Line RF Power Transistor
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16030/D The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • 30 WATTS, 1.6 GHzSpecified 28 Volt, 1.6 GHz Class–C Characteristics RF POWER TRAN
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16006/D The RF Line RF Power Transistor
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16006/D The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • 6.0 WATTS, 1.6 GHzSpecified 28 Volt, 1.6 GHz Class–C Characteristics RF POWER TRA
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF158/D The RF TMOS Line N–Channel Enhancement Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF158/D The RF TMOS Line N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB 2.0 W, to 500 MHz Effi
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF157/D The RF Power MOS Line N–Channel Enhancement Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF157/D The RF Power MOS Line N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45% (Typ) 600
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF154/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF154/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state trans
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state tran
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) 150 W, to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15090/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15090/D The RF Line Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MH
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 V performance of this devi
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15060/D The RF Sub–Micron Bipolar Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15060/D The RF Sub–Micron Bipolar Line Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitt
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MH
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1500/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1500/D The RF Line Designed for 1025–1150 MHz pulse common base amplifier applications Motorola Preferred Device such as DME. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 dB Min 500 W (PEAK), 1025–1150 MHz MICROWA