Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60D/D N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60D/D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264 40 A @ 90°C This Insulated Gate Bipolar Transistor (IGBT) is co–packaged 66 A @ 25°C with a soft recovery ultra–fast rectifier and uses an advanced 600 VOLTS termination scheme to provide an enhanced and reliable high SHORT CIRCUIT RATED voltage–blocking capability. Short circuit rated IGBT’s are specifi- cally suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characterist...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MGY40N60D/D

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

40 A @ 90°C This Insulated Gate Bipolar Transistor (IGBT) is co–packaged 66 A @ 25°C with a soft recovery ultra–fast rectifier and uses an advanced 600 VOLTS termination scheme to provide an enhanced and reliable high SHORT CIRCUIT RATED voltage–blocking capability. Short circuit rated IGBT’s are specifi- cally suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operations at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost. • Industry Standard High Power TO–264 Package (TO–3PBL) C • High Speed Eoff: 60 J per Amp typical at 125°C • High Short Circuit Capability – 10 s minimum • Soft Recovery Free Wheeling Diode is included in the package • Robust High Voltage Termination G • Robust RBSOAEGC

E

CASE 340G–02, Style 5 TO–264 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 600 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 600 Vdc Gate–Emitter Voltage — Continuous VGE ±20 Vdc Collector Current — Continuous @ TC = 25°C IC25 66 Adc — Continuous @ TC = 90°C IC90 40 — Repetitive Pulsed Current (1) ICM 132 Apk Total Power Dissipation @ TC = 25°C PD 260 Watts Derate above 25°C 2.08 W/°C Operating and Storage Junction Temperature Range TJ, Tstg –55 to 150 °C Short Circuit Withstand Time tsc 10 s (VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT RθJC 0.48 °C/W Thermal Resistance — Junction to Case – Diode RθJC 1.13 Thermal Resistance — Junction to Ambient RθJA 35 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 260 °C Mounting Torque, 6–32 or M3 screw 10 lbfin (1.13 Nm) (1) Pulse width is limited by maximum junction temperature. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Mototororloa,l aIn cT. M19O95S Power MOSFET Transistor Device Data 1, ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage BVCES Vdc (VGE = 0 Vdc, IC = 250 µAdc) 600 — — Temperature Coefficient (Positive) — 870 — mV/°C Zero Gate Voltage Collector Current ICES µAdc (VCE = 600 Vdc, VGE = 0 Vdc) — — 100 (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C) — — 2500 Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES — — 250 nAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage VCE(on) Vdc (VGE = 15 Vdc, IC = 20 Adc) — 2.20 2.80 (VGE = 15 Vdc, IC = 20 Adc, TJ = 125°C) — 2.10 — (VGE = 15 Vdc, IC = 40 Adc) — 2.60 3.25 Gate Threshold Voltage VGE(th) Vdc (VCE = VGE, IC = 1 mAdc) 4.0 6.0 8.0 Threshold Temperature Coefficient (Negative) — 10 — mV/°C Forward Transconductance (VCE = 10 Vdc, IC = 40 Adc) gfe — 12 — Mhos DYNAMIC CHARACTERISTICS Input Capacitance Cies — 6810 — pF Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, C — 464 — f = 1.0 MHz) oes Transfer Capacitance Cres — 15 — SWITCHING CHARACTERISTICS (1) Turn–On Delay Time td(on) — 126 — ns Rise Time tr — 95 — Turn–Off Delay Time (VCC = 360 Vdc, IC = 40 Adc, td(off) — 530 — Fall Time VGE = 15 Vdc, L = 300Ht— 180 — RG = 20 Ω, TJ = 25°C) f Turn–Off Switching Loss Energy losses include “tail” Eoff — 1.50 2.10 mJ Turn–On Switching Loss Eon — 2.30 — Total Switching Loss Ets — 3.80 — Turn–On Delay Time td(on) — 113 — ns Rise Time tr — 104 — Turn–Off Delay Time (VCC = 360 Vdc, IC = 40 Adc, td(off) — 588 — Fall Time VGE = 15 Vdc, L = 300 H tf — 346 —RG = 20 Ω, TJ = 125°C) Turn–Off Switching Loss Energy losses include “tail” Eoff — 2.70 — mJ Turn–On Switching Loss Eon — 3.80 — Total Switching Loss Ets — 6.50 — Gate Charge QT — 248 — nC (VCC = 360 Vdc, IC = 40 Adc, Q — 49 — VGE = 15 Vdc) Q2 — 81 — DIODE CHARACTERISTICS Diode Forward Voltage Drop VFEC Vdc (IEC = 20 Adc) — 1.19 1.70 (IEC = 20 Adc, TJ = 125°C) — 1.04 — (IEC = 40 Adc) — 1.36 2.00 (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (continued) 2 Motorola TMOS Power MOSFET Transistor Device Data,

ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit DIODE CHARACTERISTICS — continued Reverse Recovery Time trr — 138 — ns (IF = 40 Adc, VR = 360 Vdc, ta — 78 — dIF/dt = 200 A/µs) tb — 60 — Reverse Recovery Stored Charge QRR — 2.1 — µC Reverse Recovery Time trr — 213 — ns (IF = 40 Adc, VR = 360 Vdc, ta — 122 — dIF/dt = 200 A/µs, TJ = 125°C) tb — 91 — Reverse Recovery Stored Charge QRR — 4.9 — µC INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance LE nH (Measured from the emitter lead 0.25″ from package to emitter bond pad) — 13 —

TYPICAL ELECTRICAL CHARACTERISTICS

80 80 TJ = 25°C VGE = 20 V 12.5 V TJ = 125°C VGE = 20 V 12.5 V 17.5 V 15 V 10 V 17.5 V 15 V 60 60 10 V 40 40 20 2000012345012345VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

Figure 1. Output Characteristics, TJ = 25°C Figure 2. Output Characteristics, TJ = 125°C

80 3 VCE = 100 V VGE = 15V5µs PULSE WIDTH 80 µs PULSE WIDTH IC = 40 A 60 TJ = 125°C 2.6 30 A 25°C 2.2 20A01.85678910 – 50 0 50 100 150 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Transfer Characteristics Figure 4. Collector–to–Emitter Saturation Voltage versus Junction Temperature Motorola TMOS Power MOSFET Transistor Device Data 3

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS), 12000 20 VCE = 0 V TJ = 25°C

QT

Cies 10 Q1 Q2 5 TJ = 25°C C IC = 40 Aoes Cres000510 15 20 25 0 50 100 150 200 250 GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC)

Figure 5. Capacitance Variation Figure 6. Gate–to–Emitter Voltage versus Total Charge

8.5 VCC = 360 V VCC = 360VV= 15 V 7.5 GE 7T = 125°C IC = 40 A VGE = 15VJRG = 20 Ω 6.5 IC = 40 A 5.5 30 A 30 A 4.5 20 A 20 A 3.5 2.5 1 10 20 30 40 50 0 25 50 75 100 125 150 RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Total Switching Losses versus Figure 8. Total Switching Losses versus Gate Resistance Junction Temperature

7 4 VCC = 360 V VCC = 360V6VGE = 15 V VGE = 15 V RG = 20 Ω TJ = 125°C IC = 40A5TJ = 125°C 4 30 A 20A000510 15 20 25 30 35 40 10 20 30 40 50 IC, COLLECTOR–TO–EMITTER CURRENT (AMPS) RG, GATE RESISTANCE (OHMS)

Figure 9. Total Switching Losses versus Figure 10. Turn–Off Losses versus Collector–to–Emitter Current Gate Resistance

4 Motorola TMOS Power MOSFET Transistor Device Data TOTAL SWITCHING ENERGY LOSSES (mJ) TOTAL SWITCHING ENERGY LOSSES (mJ) C, CAPACITANCE (pF) TURN–OFF ENERGY LOSSES (mJ) TOTAL SWITCHING ENERGY LOSSES (mJ) VGE, GATE–TO–EMITTER VOLTAGE (VOLTS), 4 3 VCC = 360 V VCC = 360 V VGE = 15 V VGE = 15 V RG = 20 Ω RG = 20Ω3TJ = 125°C 2 IC = 40 A 30A1120A00025 50 75 100 125 1500510 15 20 25 30 35 40 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)

Figure 11. Turn–Off Losses versus Figure 12. Turn–Off Losses versus Junction Temperature Collector–to–Emitter Current

100 100 10 10 TJ = 125°C TJ = 25°C11VGE = 15 V RGE = 20 Ω TJ = 125°C 0.1 0.1 0 0.4 0.8 1.2 1 10 100 1000 VFM, FORWARD VOLTAGE DROP (VOLTS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

Figure 13. Typical Diode Forward Drop versus Figure 14. Reverse Biased Safe Instantaneous Forward Current Operating Area Motorola TMOS Power MOSFET Transistor Device Data 5

iF, INSTANTANEOUS FORWARD CURRENT (AMPS) TURN–OFF ENERGY LOSSES (mJ) IC, COLLECTOR–TO–EMITTER CURRENT (A) TURN–OFF ENERGY LOSSES (mJ),

PACKAGE DIMENSIONS

0.25 (0.010) MTBM–B– –Q– –T– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI

C Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

U E N MILLIMETERS INCHES

DIM MIN MAX MIN MAX A 2.8 2.9 1.102 1.142

A B 19.3 20.3 0.760 0.800

C 4.7 5.3 0.185 0.209

L D 0.93 1.48 0.037 0.058R123E1.9 2.1 0.075 0.083

F 2.2 2.4 0.087 0.102 –Y– G 5.45 BSC 0.215 BSC

P H 2.6 3.0 0.102 0.118 K J 0.43 0.78 0.017 0.031

K 17.6 18.8 0.693 0.740 L 11.0 11.4 0.433 0.449 N 3.95 4.75 0.156 0.187

W P 2.2 2.6 0.087 0.102F 2 PL Q 3.1 3.5 0.122 0.137 G R 2.15 2.35 0.085 0.093 J U 6.1 6.5 0.240 0.256 D 3 PL W 2.8 3.2 0.110 0.125H

0.25 (0.010) MYQSSTYLE 5: PIN 1. GATE 2. COLLECTOR 3. EMITTER

CASE 340G–02 TO–264 ISSUE E

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola TMOS Power MOSFET TransistorM DGeYv4ic0eN D60aDta/D]
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