Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1946/D The RF Line

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1946/D The RF Line .designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance 30 W, 136–220 MHz Output Power = 30 Watts RF POWER Power Gain = 10 dB TRANSISTORS Efficiency = 60% NPN SILICON • Diffused Emitter Resistor Ballasting • Characterized to 220 MHz • Load Mismatch at High Line and Overdrive Conditions MAXIMUM RATINGS CASE 211–07, STYLE 1 Rating Symbol Value Unit MRF1946 Collector–Emitter Voltage VCEO 16 Vdc Collector–Base Volta...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1946/D The RF Line

.designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance 30 W, 136–220 MHz Output Power = 30 Watts RF POWER Power Gain = 10 dB TRANSISTORS Efficiency = 60% NPN SILICON • Diffused Emitter Resistor Ballasting • Characterized to 220 MHz • Load Mismatch at High Line and Overdrive Conditions MAXIMUM RATINGS CASE 211–07, STYLE 1 Rating Symbol Value Unit MRF1946 Collector–Emitter Voltage VCEO 16 Vdc Collector–Base Voltage VCBO 36 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 8.0 Adc Total Device Dissipation @ TA = 25°C PD 100 Watts Derate above 25°C 0.57 W/°C Storage Temperature Range Tstg –65 to +150 °C CASE 145A–09, STYLE 1 Junction Temperature TJ 200 °C MRF1946A THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.75 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO 16 — — Vdc (IC = 25 mAdc, IB = 0) Collector–Emitter Breakdown Voltage V(BR)CES 36 — — Vdc (IC = 25 mAdc, VBE = 0) Emitter–Base Breakdown Voltage V(BR)EBO 4.0 — — Vdc (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current ICES — — 5.0 mAdc (VCE = 15 Vdc, VBE = 0, TC = 25°C) ON CHARACTERISTICS DC Current Gain hFE 40 75 150 — (IC = 1.0 Adc, VCE = 5.0 Vdc) (continued) REV6MMOotoTrOolaR, OIncL. A19 R94F DEVICE DATA MRF1946 MRF1946A, ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance Cob — 75 100 pF (VCB = 15 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain Gpe 10 11 — dB (VCC = 12.5 Vdc, Pout = 30 W, f = 175 MHz) Collector Efficiency η 60 70 — % (VCC = 12.5 Vdc, Pout = 30 W, f = 175 MHz) Load Mismatch ψ (VCC = 15.5 Vdc, Pin = 2.0 dB Overdrive, No Degradation in Power Output Load VSWR = 30:1) +12.5 L5 RFC2 Vdc + C8 C9 C10 L3 L4 C7 C1 L1 L2

DUT

C2 C3 C4 C11 C5 C6 RFC1

B

C1 — 56 pF Mini–Unelco, 3HS0006–56 L1 — 2 Turns #18 AWG, 0.125″ ID C2 — 47 pF Mini–Unelco, 3HS0006–47 L2, L3 — Circuit Board and Mounting Pad Inductance C3, C4 — 180 pF Chip Cap, ATC 100B181JC500 L4 — 3 Turns #18 AWG, 0.125″ ID C5 — 150 pF Unelco, J101–150 L5 — 6 Turns #16 Enameled, 0.250″ ID C6 — 39 pF Mini–Unelco, 3HS0006–39 RFC1 — 0.15 µH Molded Choke w/Ferrite Bead C7, C8 — 1000 pF Chip Cap, ATC 100B102JC50 RFC2 — Ferrite Choke, Fair Rite VK200–4B C9 — 0.1 µF Ceramic Capacitor C10 — 10 µF, 25 V Electrolytic Capacitor Board Material — 1/32, Glass Teflon, 1 oz. Cu Plating C11 — 56 pF Mini–Unelco, 3HS0006–56 Bead — Ferroxcube Figure 1. Broadband Test Circuit Schematic MRF1946 MRF1946A MOTOROLA RF DEVICE DATA, 60 50 f = 136 MHz 48 40 150 MHz Pin = 4 W 36 303W175 MHz2W24 20 220 MHz1W12 10 VCC = 12.5 V VCC = 12.5V00012345130 150 170 190 210 230 Pin, INPUT POWER (WATTS) f, FREQUENCY (MHz)

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency

50 50 Pin = 4Wf= 220 MHz f = 175 MHz 40 403WPin = 4W3W2W30 302W1W20 201W10 105678910 11 12 13 14 155678910 11 12 13 14 15 VCC, SUPPLY VOLTAGE (VOLTS) VCC, SUPPLY VOLTAGE (VOLTS)

Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage

50 50 Pin = 4 W Pin = 4W3Wf= 150 MHz f = 136 MHz3W40 402W2W30 301W1W20 20 10 105678910 11 12 13 14 155678910 11 12 13 14 15 VCC, SUPPLY VOLTAGE (VOLTS) VCC, SUPPLY VOLTAGE (VOLTS)

Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA MRF1946 MRF1946A

Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS), 12 100 Gpe 10 808ηPin = 3 Wc VCC = 12.5V62.0:1 40 1.5:1 INPUT VSWR 4 1.1:1 20 150 155 160 165 170 175 f, FREQUENCY (MHz)

Figure 8. Typical Performance in a Broadband Circuit

f = 136 MHz 175 Zin Zo = 10 Ω 150 220 f = 136 MHz 175 ZOL* VCC = 12.5 Vdc, Pout = 30WfZin ZOL* MHz Ohms Ohms 136 0.60 – j0.48 2.22 – j0.74 150 0.63 – j0.26 2.30 – j0.40 175 0.62 + j0.13 2.35 – j0.04 220 0.73 + j0.57 2.20 + j0.43 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency.

Figure 9. Series Equivalent Input and Output Impedance MRF1946 MRF1946A MOTOROLA RF DEVICE DATA

Gpe, POWER GAIN (dB) ηc, COLLECTOR EFFICIENCY,

PACKAGE DIMENSIONS A U NOTES: M 1. DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Q1MINCHES MILLIMETERS

4 DIM MIN MAX MIN MAX A 0.960 0.990 24.39 25.14

RBB0.370 0.390 9.40 9.90

C 0.229 0.281 5.82 7.13 D 0.215 0.235 5.47 5.96 E 0.085 0.105 2.16 2.6623H0.150 0.108 3.81 4.57 J 0.004 0.006 0.11 0.15

D S K 0.395 0.405 10.04 10.28K M 40 50 40 50

Q 0.113 0.130 2.88 3.30 R 0.245 0.255 6.23 6.47 S 0.790 0.810 20.07 20.57 U 0.720 0.730 18.29 18.54 STYLE 1: PIN 1. EMITTER

J 2. BASE

3. EMITTER

C 4. COLLECTOR H E SEATING PLANE CASE 211–07 ISSUE N MRF1946 T A NOTES: J 1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.

S SEATING

PLANE INCHES MILLIMETERS

C DIM MIN MAX MIN MAXEPA0.370 0.385 9.40 9.78

B 0.320 0.330 8.13 8.38 8–32UNC–2A C 0.670 0.790 17.02 20.07 D 0.215 0.235 5.46 5.97 WRENCH FLATLUE0.070 ––– 1.78 –––J 0.003 0.007 0.08 0.18 K 0.490 ––– 12.45 ––– L 0.055 0.070 1.40 1.78 M 45 NOM 45 NOM3DP––– 0.050 ––– 1.27K R 0.299 0.307 7.59 7.80 S 0.158 0.178 4.01 4.52

B24T0.083 0.100 2.11 2.54

U 0.098 0.132 2.49 3.35 STYLE 1: 1 PIN 1. EMITTER 2. BASE

M 3. EMITTER

4. COLLECTOR

R CASE 145A–09 ISSUE M MRF1946A MOTOROLA RF DEVICE DATA MRF1946 MRF1946A

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MRF1946 MRF1946A ◊ MOTOROLA RF DEVICMER DF1A9T4A6/D

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