Download: Order this document The RF MOSFET Line 85 WATTS, 1.0 GHz N–Channel Enhancement–Mode Lateral MOSFET 28 VOLTS

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF185/D The RF MOSFET Line 85 WATTS, 1.0 GHz N–Channel Enhancement–Mode Lateral MOSFET 28 VOLTS LATERAL N–CHANNEL • High Gain, Rugged Device BROADBAND • Broadband Performance from HF to 1 GHz RF POWER MOSFET • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode InductancesDGSG(FLANGE) D CASE 375B–02, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS ±20 Vdc Storage Temperature Range Tstg – 65 to +150 °C Operating Junction Temperature TJ 200 °C Total Device Dissipation @ TC ...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF185/D The RF MOSFET Line

85 WATTS, 1.0 GHz

N–Channel Enhancement–Mode Lateral MOSFET 28 VOLTS

LATERAL N–CHANNEL • High Gain, Rugged Device BROADBAND • Broadband Performance from HF to 1 GHz RF POWER MOSFET • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

D G S

G (FLANGE)

D

CASE 375B–02, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS ±20 Vdc Storage Temperature Range Tstg – 65 to +150 °C Operating Junction Temperature TJ 200 °C Total Device Dissipation @ TC = 25°C PD 250 Watts Derate above 25°C 1.45 W/°C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.7 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage V(BR)DSS 65 – – Vdc (VGS = 0 V, ID = 1 Adc) Zero Gate Voltage Drain Current IDSS – – 1 µAdc (VDS = 28 V, VGS = 0 V) Gate–Source Leakage Current IGSS – – 1 µAdc (VGS = 20 V, VDS = 0 V) NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV1MMOotoTrOolaR, OIncL. A19 R97F DEVICE DATA MRF185, ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS Gate Quiescent Voltage VGS(Q) 345Vdc Delta Quiescent Voltage between sides ∆VGS(Q) – 0.15 0.3 Vdc Drain–Source On–Voltage VDS(on) – 0.75 1 Vdc (VGS = 10 V, ID = 3 A per side) Forward Transconductance gfs 1.6 2 – s (VDS = 10 V, ID = 3 A per side) DYNAMIC CHARACTERISTICS Output Capacitance Coss – 38 – pF Reverse Transfer Capacitance Crss – 4.6 6 pF FUNCTIONAL CHARACTERISTICS Common Source Power Gain Gps 11 14 – dB (VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA) Drain Efficiency η 45 55 – % (VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA) Load Mismatch (VDD = 28 Vdc, Pout = 85 W, f = 960 MHz, IDQ = 600 mA, Ψ No Degradation in Output Power Load VSWR 5:1 at All Phase Angles) MRF185 MOTOROLA RF DEVICE DATA,

PACKAGE DIMENSIONS Q 2 PL NOTES: G 0.25 (0.010) MTBM1. DIMENSIONING AND TOLERANCING PER ANSI L Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.

1 2 INCHES MILLIMETERS DIM MIN MAX MIN MAX

R –B– A 1.330 1.350 33.79 34.29B 0.375 0.395 9.52 10.03

5 C 0.180 0.210 4.57 5.33 D 0.320 0.340 8.13 8.6434E0.060 0.070 1.52 1.77 F 0.004 0.006 0.11 0.15

K G 1.100 BSC 27.94 BSC

4 PLDH0.093 0.108 2.36 2.74 K 0.085 0.115 2.16 2.92 L 0.425 BSC 10.80 BSC N 0.845 0.875 21.46 22.23 Q 0.118 0.130 3.00 3.30 R 0.390 0.410 9.91 10.41

F N STYLE 2:E PIN 1. DRAIN

2. DRAIN 3. GATE 4. GATE –T– 5. SOURCE

A SEATING H C PLANE CASE 375B–02 ISSUE A MOTOROLA RF DEVICE DATA MRF185

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps

MRF185 ◊ MOTOROLA RF DEVICMER DFA1T8A5/D

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