Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF184/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF184/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen- cies to 1.0 GHz. The high gain and broadband performance of these devices 60 W, 1.0 GHz makes them ideal for large–signal, common source amplifier applications in 28 LATERAL N–CHANNEL volt base station equipment. BROADBAND • Guaranteed Performance @ 945 MHz, 28 Volts RF POWER MOSFETs Output Power = 60 Watts Power Gain = 11.5 dB Efficiency = 53% • Characterized with Series Equivalent Large–Signal D Im...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF184/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications at frequen- cies to 1.0 GHz. The high gain and broadband performance of these devices 60 W, 1.0 GHz makes them ideal for large–signal, common source amplifier applications in 28 LATERAL N–CHANNEL volt base station equipment. BROADBAND • Guaranteed Performance @ 945 MHz, 28 Volts RF POWER MOSFETs Output Power = 60 Watts Power Gain = 11.5 dB Efficiency = 53% • Characterized with Series Equivalent Large–Signal D Impedance Parameters • S–Parameter Characterization at High Bias Levels • CASE 360B–01, STYLE 1Excellent Thermal Stability (MRF184) • Capable of Handling 30:1 VSWR @ 28 Vdc, 945 MHz

G

CASE 360C–03, STYLE 1 (MRF184S)

S

MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS ±20 Vdc Drain Current — Continuous ID 7 Adc Total Device Dissipation @ TC = 70°C PD 118 Watts Derate above 70°C 0.9 W/°C Storage Temperature Range Tstg – 65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.1 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage V(BR)DSS 65 – – Vdc (VGS = 0 V, ID = 1 Adc) Zero Gate Voltage Drain Current IDSS – – 1 µAdc (VDS = 28 V, VGS = 0 V) Gate–Source Leakage Current IGSS – – 1 µAdc (VGS = 20 V, VDS = 0 V) NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV2MMOotoTrOolaR, OIncL. A19 R97F DEVICE DATA MRF184 MRF184S, ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 234Vdc (VDS = 10 V, ID = 200 µA) Gate Quiescent Voltage VGS(Q) 345Vdc (VDS = 28 V, ID = 100 mA) Drain–Source On–Voltage VDS(on) – 0.65 0.8 Vdc (VGS = 10 V, ID = 3 A) Forward Transconductance gfs 2.2 2.6 – s (VDS = 10 V, ID = 3 A) DYNAMIC CHARACTERISTICS Input Capacitance Ciss – 83 – pF (VDS = 28 V, VGS = 0 V, f = 1 MHz) Output Capacitance Coss – 44 – pF (VDS = 28 V, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance Crss – 4.3 – pF (VDS = 28 V, VGS = 0 V, f = 1 MHz) FUNCTIONAL CHARACTERISTICS Common Source Power Gain Gps 11.5 15 – dB (VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA) Drain Efficiency η 53 60 – % (VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA) Load Mismatch ψ (VDD = 28 V, Pout = 60 W, IDQ = 100 mA, f = 945 MHz, No Degradation in Output Power Load VSWR 5:1 at all Phase Angles) R1 C6 C7 R4

VGG

C8 C11 C12 R2 C5 VDD C9 B1 R3 L1 C2 C10 C13

DUT RF

INPUT C1 C4 RF TL2 TL3 TL1 TL4 OUTPUT C3 B1 Short RF Bead Fair Rite–2743019447 L1 5 Turns, 20 AWG, IDIA 0.126″ C1 18 pF Chip Capacitor R1 10 kΩ, 1/4 W Resistor C2, C3, C6, C9 43 pF Chip Capacitor R2 13 kΩ, 1/4 W Resistor C4 100 pF Chip Capacitor R3 1.0 kΩ, 1/4 W Chip Resistor C5, C12 10 µF, 50 Vdc Electrolytic Capacitor R44x39 Ω, 1/8 W Chip Resistor C7, C10 1000 pF Chip Capacitor TL1–TL4 Microstrip Line See Photomaster C8, C11 0.1 µF, 50 Vdc Chip Capacitor Ckt Board 1/32″ Glass Teflon, εr = 2.55 C13 250 µF, 50 Vdc Electrolytic Capacitor ARLON–GX–0300–55–22 Figure 1. MRF184 Test Circuit Schematic,

TYPICAL CHARACTERISTICS

– 20 –15 3rd ORDER – 30 – 25 – 40 IDQ = 100 mA 5th – 50 – 35 7th 250 mA – 60 600 mA VDD = 28 Vdc – 45 –70 f1 = 945 MHz VDD = 28 Vdc f2 = 945.1 MHz 400 mA f1 = 945 MHz IDQ = 400 mA f2 = 945.1 MHz – 80 – 55 0 10 20 30 40 50 60 70 0.1 1 10 100 Pout, OUTPUT POWER (WATTS PEP) Pout, OUTPUT POWER (WATTS PEP)

Figure 2. Intermodulation Distortion versus Figure 3. Intermodulation Distortion versus Output Power Output Power

18 80 16 70 Gpe IDQ = 600 mA 60 400 mA 50 40 15 250 mA 14 Pout 100 mA 20 VDS = 28 Vdc VDD = 28 Vdc 10 IDQ = 400 mA f = 945 MHz f = 945 MHz 12 0 14 1 10 100 0 0.5 1 1.5 2 2.5 3 Pout, OUTPUT POWER (WATTS) Pin, INPUT POWER (WATTS)

Figure 4. Power Gain versus Output Power Figure 5. Output Power versus Input Power

100 80 Pin = 4.0 W90 70 70 2.0 W 60 50 TYPICAL DEVICE SHOWN 50 40 1.0 W 40 30 20 VDS = 28 Vdc IDQ = 400 mA 10 Pin = 2.0 W10 f = 945 MHz f = 945 MHz0012 14 16 18 20 22 24 26 28 30 32 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VDD, SUPPLY VOLTAGE (VOLTS) VGS, GATE–SOURCE VOLTAGE (VOLTS)

Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Gate Voltage MOTOROLA RF DEVICE DATA MRF184 MRF184S

Pout , OUTPUT POWER (WATTS) Gpe, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) IMD, INTERMODULATION DISTORTION (dBc) Gpe, POWER GAIN (dB),

TYPICAL CHARACTERISTICS

90 4 80 3.5 70 Pin = 2.5W32.5 50 TYPICAL DEVICE SHOWN 40 VDD = 28 Vdc 1.0 W IDQ = 400 mA 1.530 SINGLE TONE 20 0.5W1VDS = 28 Vdc 10 0.500800 820 840 860 880 900 920 940 960 980 10000123456f, FREQUENCY (MHz) VGS, GATE VOLTAGE (VOLTS)

Figure 8. Output Power versus Frequency Figure 9. Drain Current versus Gate Voltage

140 6 5.5 120 5 4.5 Ciss 80 3.5 60 2.5

C

40 oss VGS = 0 Vdc 1.5 f = 1.0 MHz 20 1 TJ = 150°C Crss 0.5 TF = 70°C000510 15 20 25 30 35 40 45 500510 15 20 25 30 35 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) VDS, DRAIN VOLTAGE (Vdc)

Figure 10. Capacitance versus Voltage Figure 11. DC Safe Operating Area

7 16 65 6.5 6 η15.5 60 5.5 4.5 15 55 4 Gpe 3.5 14.5 50 2.5 14 45 1.5 VDD = 28 Vdc 40 1 TJ = 175°C 13.5 IDQ = 400 mA VSWR 0.5 TF = 70°C Pout = 60 W (CW) 0 13 350510 15 20 25 30 35 880 900 920 940 960 980 VDS, DRAIN VOLTAGE (Vdc) f, FREQUENCY (MHz)

Figure 12. DC Safe Operating Area Figure 13. Performance in Broadband Circuit

ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) Pout , OUTPUT POWER (WATTS) Gpe, POWER GAIN (dB) ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (mA) 1.0 1.5 2.0 2.5 η , EFFICIENCY (%) INPUT VSWR, 40 FUNDAMENTAL 3rd ORDER –10 VDS = 26 Vdc – 20 ID = 2.1 A f1 = 945 MHz – 30 f2 = 945.1 MHz – 40 10 15 20 25 30 35 40 Pin, INPUT POWER (dBm)

Figure 14. Class A Third Order Intercept Point

R1 C10 C8 B1 C11 C5 C7 C9 R4 C6 C12 R2 R3 C2 L1 C13 C1 C4 TL2 TL3 TL1 TL4 C3 XRF184

Figure 15. Component Parts Layout MOTOROLA RF DEVICE DATA MRF184 MRF184S

Pout , OUTPUT POWER (dBm), Zin 900 f = 1000 MHz f = 1000 MHz 950 900 Z0 = 10 Ω 850 800 ZOL* VDD = 28 Vdc, IDQ = 100 mA, Pout = 60WfZin ZOL*

MHz Ohms Ohms

800 0.40 + j0.90 1.85 – j1.00 850 0.45 + j1.10 1.75 – j0.90 900 0.52 + j1.20 1.70 – j0.75 950 0.60 + j1.30 1.60 – j0.50 1000 0.70 + j1.38 1.57 – j0.40 Zin = Conjugate of source impedance. Zout = Conjugate of the load impedance at given output ZOL* = power, voltage, frequency and efficiency.

Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency and device stability. Figure 16. Series Equivalent Input and Output Impedance

, Table 1. Common Source S–Parameters (VDS = 13.5 V) ID = 2.0AfS11 S21 S12 S22 MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 20 0.916 179 10.88 80 0.014 –22 0.843 175 30 0.917 178 9.26 79 0.014 –25 0.847 174 40 0.918 177 8.10 78 0.015 –29 0.852 174 50 0.919 176 7.16 77 0.015 –33 0.853 174 100 0.919 175 4.57 75 0.015 –35 0.855 173 150 0.920 174 3.34 67 0.015 –38 0.865 173 200 0.921 173 2.60 62 0.014 –41 0.867 173 250 0.922 173 2.11 59 0.014 –45 0.877 173 300 0.928 172 1.77 55 0.014 –49 0.881 173 350 0.938 172 1.50 50 0.013 –55 0.887 173 400 0.941 171 1.28 47 0.013 –59 0.895 173 450 0.942 171 1.12 44 0.012 –62 0.896 173 500 0.943 171 1.00 41 0.012 –68 0.898 172 550 0.945 171 0.91 38 0.010 –75 0.899 172 600 0.947 171 0.80 35 0.010 –79 0.903 172 650 0.948 171 0.71 33 0.009 –85 0.905 172 700 0.955 170 0.65 30 0.008 –88 0.909 172 750 0.959 170 0.60 28 0.008 –95 0.919 172 800 0.962 169 0.55 25 0.007 –102 0.922 172 850 0.963 169 0.50 23 0.007 –111 0.923 171 900 0.964 169 0.45 21 0.007 –118 0.926 171 950 0.968 169 0.43 19 0.006 –125 0.929 171 1000 0.970 169 0.39 18 0.006 –129 0.933 171 1050 0.971 168 0.36 17 0.005 –134 0.935 171 1100 0.972 168 0.34 14 0.005 –142 0.936 170 1150 0.973 168 0.32 13 0.005 –149 0.938 170 1200 0.974 167 0.29 12 0.006 –156 0.940 169 1250 0.976 167 0.28 10 0.007 –162 0.943 169 1300 0.975 167 0.26 9 0.008 –173 0.945 168 1350 0.972 166 0.25 8 0.009 –178 0.946 167 1400 0.969 166 0.24 7 0.011 175 0.947 167 1450 0.965 165 0.22 6 0.012 172 0.948 167 1500 0.959 164 0.21 5 0.013 169 0.950 167 MOTOROLA RF DEVICE DATA MRF184 MRF184S, Table 2. Common Source S–Parameters (VDS = 28 V) ID = 2.0AfS11 S21 S12 S22 MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 20 0.912 –170 16.01 84 0.016 –12 0.746 178 30 0.917 –173 13.73 82 0.015 –15 0.755 177 40 0.918 –174 12.02 80 0.014 –17 0.759 177 50 0.919 –176 10.62 78 0.013 –20 0.766 176 100 0.922 –178 6.76 71 0.012 –22 0.775 176 150 0.930 177 4.92 65 0.011 –25 0.791 176 200 0.931 176 3.82 60 0.010 –27 0.791 176 250 0.933 175 3.07 55 0.009 –29 0.793 176 300 0.941 174 2.53 51 0.009 –31 0.826 176 350 0.943 173 2.14 45 0.008 –35 0.834 176 400 0.945 172 1.83 41 0.008 –45 0.853 176 450 0.948 172 1.58 38 0.007 –52 0.858 176 500 0.950 172 1.39 35 0.007 –57 0.865 176 550 0.955 172 1.24 32 0.007 –61 0.876 176 600 0.960 172 1.10 29 0.006 –64 0.882 176 650 0.965 171 0.96 26 0.006 –68 0.888 175 700 0.967 171 0.89 24 0.006 –71 0.894 175 750 0.970 171 0.80 20 0.005 –73 0.904 175 800 0.973 170 0.73 18 0.005 –78 0.906 175 850 0.974 169 0.66 17 0.004 –83 0.908 174 900 0.975 169 0.61 13 0.004 –91 0.909 173 950 0.976 169 0.57 12 0.004 –94 0.915 173 1000 0.978 168 0.52 11 0.004 –96 0.916 173 1050 0.979 168 0.47 9 0.005 –102 0.919 172 1100 0.980 168 0.43 7 0.005 –115 0.924 172 1150 0.980 167 0.41 6 0.006 –119 0.931 171 1200 0.979 167 0.38 5 0.006 –125 0.934 170 1250 0.978 167 0.36 2 0.006 –139 0.935 170 1300 0.974 167 0.34 1 0.007 –148 0.936 170 1350 0.971 166 0.32 0 0.007 –156 0.937 169 1400 0.970 165 0.31 –1 0.007 –165 0.938 169 1450 0.969 165 0.30 –2 0.008 –171 0.939 169 1500 0.965 164 0.27 –3 0.008 –178 0.946 169,

PACKAGE DIMENSIONS

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

G 2. CONTROLLING DIMENSION: INCH.

–B– INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.790 0.810 20.07 20.573B0.220 0.240 5.59 6.09 C 0.125 0.175 3.18 4.45 D 0.205 0.225 5.21 5.712Q2PL E 0.050 0.070 1.27 1.77

K 0.25 (0.010) MTAMBM

F 0.004 0.006 0.11 0.15

D G 0.562 BSC 14.27 BSC

H 0.070 0.090 1.78 2.29

FCK0.215 0.255 5.47 6.47 HENN0.350 0.370 8.89 9.39

Q 0.120 0.140 3.05 3.55 –T– SEATINGPLANE STYLE 1: PIN 1. DRAIN –A– 2. GATE 3. SOURCE

CASE 360B–01 ISSUE O

(MRF184) 1 NOTES: –B– 1. DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982. 2 2. CONTROLLING DIMENSION: INCH.

K INCHES MILLIMETERS D DIM MIN MAX MIN MAX

A 0.370 0.390 9.40 9.91 B 0.220 0.240 5.59 6.09 C 0.105 0.155 2.67 3.94 D 0.205 0.225 5.21 5.71

ENFE0.035 0.045 0.89 1.14

F 0.004 0.006 0.11 0.15

H H 0.057 0.067 1.45 1.70 C K 0.085 0.115 2.16 2.923 –T– N 0.350 0.370 8.89 9.39 SEATING

PLANE STYLE 1: PIN 1. DRAIN –A– 2. GATE 3. SOURCE

CASE 360C–03 ISSUE B

(MRF184S) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps

MOTOROLA RF DEVICE DATA ◊ MRF184 MRMFR1F81484S/D

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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF148/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power =
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state trans
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state tran
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF140/D The RF MOSFET Line N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) 150 W, to
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficie