Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF183/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF183/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen- cies to 1.0 GHz. The high gain and broadband performance of these devices 45 W, 1.0 GHz makes ithem ideal for large–signal, common source amplifier applications in 28 LATERAL N–CHANNEL volt base station equipment. BROADBAND • RF POWER MOSFETsGuaranteed Performance at 945 MHz, 28 Volts Output Power – 45 Watts PEP Power Gain – 11.5 dB Efficiency – 33% IMD – 28 dBc D • Characterized with Series Equivale...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF183/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications at frequen- cies to 1.0 GHz. The high gain and broadband performance of these devices 45 W, 1.0 GHz makes ithem ideal for large–signal, common source amplifier applications in 28 LATERAL N–CHANNEL volt base station equipment. BROADBAND • RF POWER MOSFETsGuaranteed Performance at 945 MHz, 28 Volts Output Power – 45 Watts PEP Power Gain – 11.5 dB Efficiency – 33% IMD – 28 dBc D • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels CASE 360B–01, STYLE 1 • Excellent Thermal Stability (MRF183) • 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW

G

CASE 360C–03, STYLE 1 (MRF183S)

S

MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage (RGS = 1 Meg Ohm) VDGR 65 Vdc Gate–Source Voltage VGS ±20 Vdc Drain Current – Continuous ID 5 Adc Total Device Dissipation @ TC = 70°C PD 86 W Derate above 70°C 0.67 W/°C Storage Temperature Range Tstg – 65 to +200 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.5 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV6MMOotoTrOolaR, OIncL. A19 R97F DEVICE DATA MRF183 MRF183S, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage BVDSS 65 – – Vdc (VGS = 0, ID = 50 Adc) Zero Gate Voltage Drain Current IDSS – – 1 µAdc (VDS = 28 V, VGS = 0) Gate–Source Leakage Current IGSS – – 1 µAdc (VGS = 20 V, VDS = 0) ON CHARACTERISTICS Gate Quiescent Voltage VGS(Q) 3 – 5 Vdc (VDS = 28 Vdc, ID = 250 mAdc) Drain–Source On–Voltage VDS(on) – 0.7 – Vdc (VGS = 10 V, ID = 3 A) Forward Transconductance gfs – 2 – S (VDS = 10 Vdc, ID = 5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Ciss – 82 – pF (VDS = 28 V, VGS = 0, f = 1 MHz) Output Capacitance Coss – 38 – pF (VDS = 28 V, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance Crss – 4.5 – pF (VDS = 28 V, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) (VDD = 28 Vdc, Pout = 45 Watts PEP, f1 = 945.0, f2 = 945.1 MHz, IDQ = 250 mA) Two–Tone Common Source Amplifier Power Gain Gps 11.5 13 – dB Two–Tone Drain Efficiency η 33 36 – % 3rd Order Intermodulation Distortion IMD – –32 –28 dBc Input Return Loss IRL 9 14 – dB (VDD = 28 Vdc, Pout = 45 Watts PEP, f1 = 930.0, f2 = 930.1 MHz, and f1 = 960.0, f2 = 960.1 MHz, IDQ = 250 mA) Two–Tone Common Source Amplifier Power Gain Gps – 13 – dB Two–Tone Drain Efficiency η – 35 – % 3rd Order Intermodulation Distortion IMD – –32 – dBc Input Return Loss IRL – 12 – dB Output Mismatch Stress Ψ No Degradation in Output Power (VDD = 28 Vdc, Pout = 45 Watts CW, IDQ = 250 mA, Before and After Test f = 945 MHz, VSWR 5:1 at All Phase Angles) MRF183 MRF183S MOTOROLA RF DEVICE DATA, R1 R2 B1 B2 VGG V + + DD C1 R3 C2 C3 C4 C13 C14 C15 C16 L1 L2 RF DUT RF INPUT C5 C8 C9 C12 OUTPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 C6 C7 C10 C11 B1 Short Ferrite Bead R3 4.7 MΩ, 1/4 W Carbon B2 Long Ferrite Bead Z1 T–Line, 0.200″ x 0.080″ C1 10 µF, 50 V Electrolytic Capacitor Z2 T–Line, 0.570″ x 0.120″ C2, C14 0.1 µF Chip Capacitor Z3 T–Line, 0.610″ x 0.320″ C3 1000 pF Chip Capacitor Z4 T–Line, 0.160″ x 0.320″ x 0.620″ C4, C13 47 pf Chip Capacitor Tapered Line C5, C12 47 pF Chip Capacitor Z5 T–Line, 0.650″ x 0.620″ C6, C11 0.8–8.0 pF Trim Capacitor Z6 T–Line, 0.020″ x 0.620″ C7, C8 10 pF Chip Capacitor Z7 T–Line, 0.270″ x 0.320″ C9, C10 10 pF Chip Capacitor Z8 T–Line, 0.130″ x 0.320″ C15 100 pF Chip Capacitor Z9 T–Line, 0.370″ x 0.080″ C16 250 µF, 50 V Electrolytic Capacitor Z10 T–Line, 1.050″ x 0.080″ L1, L2 5 Turns, 24 AWG, ID 0.059″ Z11 T–Line, 0.290″ x 0.080″ R1 120 Ω, 1/4 W Carbon Board 0.030″ Glass Teflon, εr = 2.55 R2 18 kΩ, 1/4 W Carbon ARLON–GX–0300–55–22 Figure 1. MRF183S Two Tone Test Circuit Schematic MOTOROLA RF DEVICE DATA MRF183 MRF183S,

TYPICAL CHARACTERISTICS

– 20 –20 – 25 VDD = 28 Vdc I = 250 mA 3rd ORDER – 25 – 30 DQ f1 = 945 MHz IDQ = 75 mA – 35 f2 = 945.1 MHz – 30 – 40 – 35 – 45 5th 150 mA – 50 – 40 – 55 7th – 45 – 60 250 mA V = 28 Vdc – 50 DD – 65 450 mA f1 = 945 MHz f2 = 945.1 MHz – 70 – 550510 15 20 25 30 35 40 45 50 0.1 1 10 100 Pout, OUTPUT POWER (WATTS PEP) Pout, OUTPUT POWER (WATTS PEP)

Figure 2. Intermodulation Distortion versus Figure 3. Intermodulation Distortion versus Output Power Output Power

16 60 16

V

I DD = 28 Vdc DQ = 450 mA 15.5 f = 945 MHz 50 15 Gpe 285 mA 15 40 14 14.5 30 13 150 mA Pout 14 20 12 V = 28 Vdc 13.5 10 DD 11 75 mA IDQ = 75 mA f = 945 MHz 13 0 10 1 10 100 0 0.5 1 1.5 2 2.5 3 3.5 4 Pout, OUTPUT POWER (WATTS) Pin, INPUT POWER (WATTS)

Figure 4. Power Gain versus Output Power Figure 5. Output Power versus Input Power

90 50 Pin = 4.0 W80 45 70 40 60 2.0 W 35 50 TYPICAL DEVICE SHOWN 25 VGS(th) TYPICAL = 3.13 V 40 1.0 W 20 VDD = 28 Vdc 10 VDD = 28 Vdc 10 IDQ = 75 mA 5 Pin = 1.5 W f1 = 945 MHz f1 = 945 MHz0015 17 19 21 23 25 27 29 31 33 35 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VDS, DRAIN VOLTAGE (VOLTS) VGS, GATE BIAS (VOLTS)

Figure 6. Output Power versus Drain Bias Figure 7. Output Power versus Gate Bias Supply Voltage Supply Voltage MRF183 MRF183S MOTOROLA RF DEVICE DATA

Pout , OUTPUT POWER (WATTS) Gpe, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) IMD, INTERMODULATION DISTORTION (dBc) Gpe, POWER GAIN (dB),

TYPICAL CHARACTERISTICS

60 4000 P 3000in = 2.0 W TYPICAL DEVICE SHOWN 30 2000 1.0 W VDD = 28 Vdc 0.5 W 1000 10 IDQ = 75 mA VDS = 28 Vdc SINGLE TONE 0.1W00800 820 840 860 880 900 920 940 960 980 10000123456f, FREQUENCY (MHz) VGS, GATE VOLTAGE (VOLTS)

Figure 8. Output Power versus Frequency Figure 9. Drain Current versus Gate Voltage

120 4.5 100 ID = 3.67 A 3.5 Ciss 80 3 TCASE = 70°C 2.5 TCASE = 100°C 40 Coss 1.5 VGS = 0 Vdc f = 1.0 MHz 1 0.5 C Trss J = 175°C000510 15 20 25 30 35 40 45 500510 15 20 25 30 35 40 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) VDS, DRAIN VOLTAGE (VOLTS)

Figure 10. Capacitance versus Voltage Figure 11. Class A Safe Operating Region

50 FUNDAMENTAL 30 3rd ORDER –10 VDD = 26 Vdc IDQ = 1.8 A–20 f1 = 945 MHz –30 f2 = 945.1 MHz –40 10 15 20 25 30 35 40 45 50 55 60 Pin, INPUT POWER (dBm)

Figure 12. Class A Third Order Intercept Point MOTOROLA RF DEVICE DATA MRF183 MRF183S

C, CAPACITANCE (pF) Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (dBm) ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (mA),

TYPICAL CHARACTERISTICS

14 45 13 GAIN η 11 35 10 –30 9 –31

IMD

8 –32 7 VSWR –33 6 –34 925 930 935 940 945 950 955 960 965 f, FREQUENCY (MHz)

Figure 13. Broadband Power Performance of MRF183S

C1 C2 R2 TO GATE B1R1 C3 B2 C14 C15 BIAS C4 FEEDTHRU IND1 TO DRAIN C13 C16 BIAS C8 IND2 FEEDTHRU C9 C5 C10 C12 C7 C11 C6 MRF183S

Figure 14. MRF183S Two Tone Test Circuit Component Parts Layout MRF183 MRF183S MOTOROLA RF DEVICE DATA

GT, GAIN (dB) INTERMODULATION η, EFFICIENCY (%) DISTORTION (dBc) 1.00 2.00 3.00 INPUT VSWR, f = 930 MHz Zin f = 960 MHz f = 930 MHz Z * f = 960 MHzOL Z0 = 10 Ω VDD = 28 V, IDQ = 250 mA, Pout = 45 W (PEP) f Zin ZOL* MHz Ohms Ohms 930 1.10 + j0.93 2.60 – j0.13 945 1.10 + j0.78 2.70 – j0.28 960 1.10 + j0.60 2.80 – j0.42 Zin = Conjugate of source impedance. ZOL = Conjugate of the load impedance at given output ZOL* = power, voltage and current conditions. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion.

Figure 15. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF183 MRF183S

, Table 1. Typical Common Source S–Parameters (VDS = 13.5 V) ID = 1.5AfS11 S21 S12 S22 MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 20 0.954 –157 29.58 100 0.017 11 0.778 –161 30 0.941 –164 19.73 96 0.017 8 0.796 –168 40 0.922 –168 14.84 93 0.017 4 0.804 –170 50 0.907 –171 11.94 91 0.017 3 0.808 –172 60 0.903 –172 9.75 89 0.017 2 0.812 –173 70 0.899 –173 8.34 88 0.017 0 0.814 –174 80 0.898 –174 7.29 86 0.017 –1 0.816 –175 90 0.896 –175 6.49 85 0.017 –2 0.816 –175 100 0.897 –175 5.83 84 0.017 –2 0.817 –175 150 0.895 –177 3.82 79 0.017 –6 0.822 –176 200 0.898 –178 2.84 74 0.016 –9 0.828 –176 250 0.902 –178 2.24 70 0.016 –11 0.835 –176 300 0.908 –179 1.84 66 0.015 –14 0.842 –176 350 0.905 –179 1.55 62 0.015 –16 0.850 –176 400 0.913 –180 1.32 58 0.014 –18 0.861 –176 450 0.920 180 1.15 54 0.014 –18 0.865 –176 500 0.924 179 1.01 51 0.013 –20 0.874 –177 550 0.922 179 0.89 47 0.013 –21 0.881 –177 600 0.931 178 0.80 44 0.012 –21 0.889 –177 650 0.935 178 0.72 41 0.011 –20 0.895 –177 700 0.935 177 0.64 38 0.011 –17 0.901 –178 750 0.937 177 0.59 37 0.012 –18 0.905 –178 800 0.940 176 0.54 33 0.012 –20 0.913 –178 850 0.943 176 0.50 30 0.012 –29 0.919 –179 900 0.945 175 0.46 28 0.010 –33 0.924 –179 950 0.947 174 0.43 26 0.009 –34 0.930 –180 1000 0.947 174 0.40 24 0.008 –29 0.935 180 1050 0.947 173 0.37 21 0.007 –24 0.939 179 1100 0.952 172 0.35 19 0.007 –19 0.944 179 1150 0.949 172 0.32 17 0.007 –17 0.948 178 1200 0.946 171 0.30 14 0.006 –16 0.948 177 1250 0.954 170 0.28 12 0.006 –13 0.953 177 1300 0.952 170 0.27 9 0.006 –12 0.950 176 1350 0.949 169 0.26 9 0.006 –10 0.951 176 1400 0.948 168 0.23 8 0.005 –7 0.953 175 1450 0.948 168 0.22 6 0.004 4 0.948 174 1500 0.940 167 0.21 4 0.004 19 0.944 174 MRF183 MRF183S MOTOROLA RF DEVICE DATA, Table 2. Typical Common Source S–Parameters (VDS = 28 V) ID = 1.5AfS11 S21 S12 S22 MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 20 0.968 –132 45.79 113 0.014 24 0.579 –145 30 0.953 –145 31.75 106 0.015 17 0.623 –157 40 0.921 –154 24.33 99 0.015 12 0.648 –161 50 0.904 –159 19.68 95 0.015 7 0.661 –164 60 0.898 –163 16.11 92 0.015 5 0.670 –166 70 0.890 –165 13.79 90 0.015 2 0.677 –167 80 0.886 –167 12.06 87 0.015 1 0.681 –168 90 0.886 –168 10.71 86 0.015 –1 0.684 –169 100 0.887 –169 9.61 84 0.015 –3 0.688 –169 150 0.886 –172 6.26 76 0.015 –9 0.706 –170 200 0.890 –174 4.59 69 0.014 –13 0.724 –170 250 0.898 –175 3.57 64 0.014 –17 0.744 –169 300 0.906 –176 2.88 59 0.013 –19 0.764 –169 350 0.908 –177 2.37 54 0.012 –23 0.785 –169 400 0.915 –178 2.00 49 0.011 –24 0.807 –170 450 0.924 –178 1.71 45 0.010 –25 0.821 –170 500 0.930 –179 1.48 41 0.010 –26 0.838 –171 550 0.928 –180 1.28 37 0.009 –26 0.851 –171 600 0.937 180 1.13 33 0.008 –25 0.865 –172 650 0.944 179 1.00 30 0.007 –22 0.878 –172 700 0.943 178 0.88 27 0.008 –14 0.888 –173 750 0.946 178 0.81 25 0.008 –15 0.895 –173 800 0.949 177 0.73 22 0.009 –17 0.906 –174 850 0.954 177 0.67 20 0.009 –28 0.912 –175 900 0.953 175 0.61 18 0.007 –34 0.919 –175 950 0.957 175 0.56 15 0.005 –32 0.927 –176 1000 0.957 174 0.51 13 0.004 –22 0.934 –177 1050 0.957 174 0.48 10 0.004 –11 0.939 –178 1100 0.962 173 0.45 8 0.004 –2 0.945 –178 1150 0.959 172 0.41 7 0.004 3 0.950 –179 1200 0.955 171 0.39 4 0.004 9 0.950 –180 1250 0.962 170 0.36 2 0.004 13 0.955 180 1300 0.959 170 0.33 0 0.004 17 0.953 179 1350 0.956 169 0.31 –1 0.004 25 0.954 178 1400 0.954 168 0.29 –4 0.004 32 0.957 177 1450 0.955 168 0.28 –6 0.004 46 0.952 177 1500 0.948 167 0.26 –7 0.004 56 0.948 176 MOTOROLA RF DEVICE DATA MRF183 MRF183S,

PACKAGE DIMENSIONS

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI

G Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.

–B– INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.790 0.810 20.07 20.57 B 0.220 0.240 5.59 6.09 C 0.125 0.175 3.18 4.452Q2PL D 0.205 0.225 5.21 5.71

K 0.25 (0.010) MTAMBM

E 0.050 0.070 1.27 1.77

D F 0.004 0.006 0.11 0.15

G 0.562 BSC 14.27 BSC

FCH0.070 0.090 1.78 2.29 HENK0.215 0.255 5.47 6.47

N 0.350 0.370 8.89 9.39 –T– SEATING Q 0.120 0.140 3.05 3.55PLANE STYLE 1: –A– PIN 1. DRAIN 2. GATE 3. SOURCE

CASE 360B–01 ISSUE O

(MRF183) –B– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI 2 Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.

K D INCHES MILLIMETERS

DIM MIN MAX MIN MAX A 0.370 0.390 9.40 9.91 B 0.220 0.240 5.59 6.09

E C 0.105 0.155 2.67 3.94NFD0.205 0.225 5.21 5.71 H E 0.035 0.045 0.89 1.14

F 0.004 0.006 0.11 0.153C–T– H 0.057 0.067 1.45 1.70 SEATING K 0.085 0.115 2.16 2.92 PLANE N 0.350 0.370 8.89 9.39 –A– STYLE 1:PIN 1. DRAIN 2. GATE 3. SOURCE

CASE 360C–03 ISSUE B

(MRF183S) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Customer Focus Center: 1–800–521–6274 Mfax: email is hidden – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/

MRF183 MRF183S ◊ MOTOROLA RF DEVICEM RDFA1T8A3/D

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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15090/D The RF Line Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MH
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 V performance of this devi
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MH
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1500/D The RF Line Designed for 1025–1150 MHz pulse common base amplifier applications Motorola Preferred Device such as DME. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 dB Min 500 W (PEAK), 1025–1150 MHz MICROWA
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF148/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power =
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state trans
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state tran
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF140/D The RF MOSFET Line N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) 150 W, to
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficie
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF136/D The RF MOSFET Line ! .designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance 15 W, 30 W, to 400 MHz MRF136